Suchergebnisse für "9n90" : > 60
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Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
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Im Einkaufswagen Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
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Thermostat B-1009N 90°С Produktcode: 48205
zu Favoriten hinzufügen
Lieblingsprodukt
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Sang |
Sicherungen > Thermosicherungen Funktionsbeschreibung: Термостат нормально замкнутий 90°C, 250V,2A Strom: 2 А Spannung: 250 V Temperatur: 90°C Тип: Відновлюється |
auf Bestellung 791 Stück: Lieferzeit 21-28 Tag (e) |
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AOTF9N90 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FQA9N90-F109 | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP9N90C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP9N90C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP9N90C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
auf Bestellung 1002 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP9N90C | onsemi / Fairchild |
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auf Bestellung 1829 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N90CT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N90CT | onsemi / Fairchild |
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auf Bestellung 2913 Stücke: Lieferzeit 10-14 Tag (e) |
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TSA9N90M | TRUESEMI |
Transistor N-Channel MOSFET; 900V; 9A; 1,4Ohm; 30V; 130W; -55°C~150°C; Substitute: 2SK3878; TSA9N90M TO-3P TTSA9N90M Anzahl je Verpackung: 10 Stücke |
auf Bestellung 170 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP09N90C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.37Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 702 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA9N90 |
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auf Bestellung 5620 Stücke: Lieferzeit 21-28 Tag (e) |
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FQA9N90-F109 | ON Semiconductor |
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auf Bestellung 4944 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FQA9N90C | FAIRCHILD |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FQA9N90C | FSC |
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auf Bestellung 5800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FQPF9N90C | FAIRCHIL |
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auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFN39N90 | IXYS |
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auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) |
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SLW9N90C |
auf Bestellung 12368 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SSF9N90A |
auf Bestellung 6798 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SSH9N90 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SSH9N90A |
auf Bestellung 6880 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TK09N90A |
auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
WFW9N90 |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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2SK3878(STA1,E,S) | Toshiba |
Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z; 2SK3878 TOSHIBA T2SK3878 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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2SK3878(STA1,E,S) | Toshiba | Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z; 2SK3878 TOSHIBA T2SK3878 |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FQA9N90C (Transistor polar N-Kanal) Produktcode: 48853
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Lieblingsprodukt
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ON |
![]() Uds,V: 900 V Idd,A: 9 А Rds(on), Ohm: 1,4 Ohm ZCODE: 8541290090 |
Produkt ist nicht verfügbar
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FQP9N90C Produktcode: 117719
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
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FQPF9N90C Transistor Produktcode: 44576
zu Favoriten hinzufügen
Lieblingsprodukt
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Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FQPF9N90CT Produktcode: 148086
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
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AOK9N90 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AOK9N90 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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AOK9N90 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AOTF9N90 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 46nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AOTF9N90 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQA9N90-F109 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQA9N90C | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQA9N90C-F109 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQPF9N90C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQPF9N90CT | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQPF9N90CT | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFE39N90 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFE39N90 | IXYS |
Description: MOSFET N-CH 900V 34A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFL39N90 | IXYS |
Description: MOSFET N-CH 900V 34A ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN39N90 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN39N90 | IXYS |
![]() ![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RWR89N90R9FRB12 | Vishay Dale |
![]() Packaging: Bulk Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: R (0.01%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
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RWR89N90R9FRBSL | Vishay Dale |
![]() Packaging: Bulk Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: R (0.01%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
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RWR89N90R9FRRSL | Vishay Dale |
![]() Packaging: Tape & Reel (TR) Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: R (0.01%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RWR89N90R9FSB12 | Vishay Dale |
![]() Packaging: Bulk Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: S (0.001%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RWR89N90R9FSBSL | Vishay Dale |
![]() Packaging: Bulk Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: S (0.001%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RWR89N90R9FSRSL | Vishay Dale |
![]() Packaging: Tape & Reel (TR) Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: S (0.001%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RWR89N90R9FSS70 | Vishay Dale |
![]() Packaging: Tape & Reel (TR) Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: S (0.001%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RWR89N90R9FSS73 | Vishay Dale |
![]() Packaging: Tape & Reel (TR) Power (Watts): 3W Tolerance: ±1% Features: Military, Moisture Resistant, Non-Inductive Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm) Composition: Wirewound Operating Temperature: -55°C ~ 250°C Number of Terminations: 2 Supplier Device Package: Axial Failure Rate: S (0.001%) Part Status: Active Resistance: 90.9 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TSM9N90ECI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 9A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TSM9N90ECZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 900V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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XM-B9N9-0404D | Quantic X-Microwave | RF Switch ICs Switches, ADRF5020BCCZNSMT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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XM-C9N9-0404D | Quantic X-Microwave | RF Mixer Mixers, ML1-0110HSM-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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XR-B9N9-0404D | Quantic X-Microwave | RF Switch ICs Switches, ADRF5020BCCZNSMT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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XR-C9N9-0404D | Quantic X-Microwave | RF Mixer Mixers, ML1-0110HSM-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
Thermostat B-1009N 90°С Produktcode: 48205
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller: Sang
Sicherungen > Thermosicherungen
Funktionsbeschreibung: Термостат нормально замкнутий 90°C, 250V,2A
Strom: 2 А
Spannung: 250 V
Temperatur: 90°C
Тип: Відновлюється
Sicherungen > Thermosicherungen
Funktionsbeschreibung: Термостат нормально замкнутий 90°C, 250V,2A
Strom: 2 А
Spannung: 250 V
Temperatur: 90°C
Тип: Відновлюється
auf Bestellung 791 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
---|---|
1+ | 1.68 EUR |
AOTF9N90 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 900V; 30V; 1,3Ohm; 9A; 50W; -55°C ~ 150°C; AOTF9N90 TAOTF9n90
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 900V; 30V; 1,3Ohm; 9A; 50W; -55°C ~ 150°C; AOTF9N90 TAOTF9n90
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.43 EUR |
FQA9N90-F109 |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 4.33 EUR |
FQP9N90C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.66 EUR |
22+ | 3.32 EUR |
23+ | 3.13 EUR |
FQP9N90C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.66 EUR |
22+ | 3.32 EUR |
23+ | 3.13 EUR |
500+ | 3.02 EUR |
FQP9N90C |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 1002 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.20 EUR |
50+ | 4.26 EUR |
100+ | 3.88 EUR |
500+ | 3.21 EUR |
1000+ | 3.10 EUR |
FQP9N90C |
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Hersteller: onsemi / Fairchild
MOSFETs 900V N-Channel Adv Q-FET C-Series
MOSFETs 900V N-Channel Adv Q-FET C-Series
auf Bestellung 1829 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.13 EUR |
50+ | 4.19 EUR |
100+ | 3.84 EUR |
250+ | 3.82 EUR |
500+ | 3.20 EUR |
FQPF9N90CT |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 1167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.40 EUR |
50+ | 4.37 EUR |
100+ | 3.98 EUR |
500+ | 3.30 EUR |
1000+ | 3.20 EUR |
FQPF9N90CT |
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Hersteller: onsemi / Fairchild
MOSFETs 900V N-Chan Advance Q-FET C-Series
MOSFETs 900V N-Chan Advance Q-FET C-Series
auf Bestellung 2913 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.99 EUR |
10+ | 6.56 EUR |
25+ | 4.08 EUR |
100+ | 3.70 EUR |
250+ | 3.63 EUR |
500+ | 3.29 EUR |
TSA9N90M |
Hersteller: TRUESEMI
Transistor N-Channel MOSFET; 900V; 9A; 1,4Ohm; 30V; 130W; -55°C~150°C; Substitute: 2SK3878; TSA9N90M TO-3P TTSA9N90M
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 900V; 9A; 1,4Ohm; 30V; 130W; -55°C~150°C; Substitute: 2SK3878; TSA9N90M TO-3P TTSA9N90M
Anzahl je Verpackung: 10 Stücke
auf Bestellung 170 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 4.40 EUR |
WMP09N90C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 702 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
74+ | 0.97 EUR |
92+ | 0.78 EUR |
98+ | 0.74 EUR |
FQA9N90-F109 |
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Hersteller: ON Semiconductor
auf Bestellung 4944 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQA9N90C |
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Hersteller: FAIRCHILD
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQA9N90C |
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Hersteller: FSC
TO-3 2010+
TO-3 2010+
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQPF9N90C |
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Hersteller: FAIRCHIL
09+ QFP
09+ QFP
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXFN39N90 | ![]() |
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Hersteller: IXYS
MODULE
MODULE
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SLW9N90C |
auf Bestellung 12368 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
2SK3878(STA1,E,S) |
Hersteller: Toshiba
Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z; 2SK3878 TOSHIBA T2SK3878
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z; 2SK3878 TOSHIBA T2SK3878
Anzahl je Verpackung: 25 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 6.52 EUR |
2SK3878(STA1,E,S) |
Hersteller: Toshiba
Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z; 2SK3878 TOSHIBA T2SK3878
Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z; 2SK3878 TOSHIBA T2SK3878
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQA9N90C (Transistor polar N-Kanal) Produktcode: 48853
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: ON
Transistoren > MOSFET N-CH
Uds,V: 900 V
Idd,A: 9 А
Rds(on), Ohm: 1,4 Ohm
ZCODE: 8541290090
Transistoren > MOSFET N-CH
Uds,V: 900 V
Idd,A: 9 А
Rds(on), Ohm: 1,4 Ohm
ZCODE: 8541290090
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQP9N90C Produktcode: 117719
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQPF9N90C Transistor Produktcode: 44576
zu Favoriten hinzufügen
Lieblingsprodukt
|
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQPF9N90CT Produktcode: 148086
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AOK9N90 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AOK9N90 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AOK9N90 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AOTF9N90 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of channel: enhancement
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AOTF9N90 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 900V 9A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Description: MOSFET N-CH 900V 9A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
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FQA9N90-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 8.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 900V 8.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
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FQA9N90C |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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FQA9N90C-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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FQPF9N90C |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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FQPF9N90CT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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FQPF9N90CT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IXFE39N90 |
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Hersteller: IXYS
MOSFET Modules 34 Amps 900V 0.22 Rds
MOSFET Modules 34 Amps 900V 0.22 Rds
Produkt ist nicht verfügbar
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IXFE39N90 |
Hersteller: IXYS
Description: MOSFET N-CH 900V 34A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET N-CH 900V 34A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
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IXFL39N90 |
Hersteller: IXYS
Description: MOSFET N-CH 900V 34A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET N-CH 900V 34A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN39N90 | ![]() |
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Hersteller: IXYS
MOSFET Modules 39 Amps 900V 0.2 Rds
MOSFET Modules 39 Amps 900V 0.2 Rds
Produkt ist nicht verfügbar
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IXFN39N90 | ![]() |
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Hersteller: IXYS
Description: MOSFET N-CH 900V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET N-CH 900V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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RWR89N90R9FRB12 |
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Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: R (0.01%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: R (0.01%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
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RWR89N90R9FRBSL |
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Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: R (0.01%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: R (0.01%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
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RWR89N90R9FRRSL |
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Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: R (0.01%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: R (0.01%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RWR89N90R9FSB12 |
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Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RWR89N90R9FSBSL |
![]() |
Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Bulk
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RWR89N90R9FSRSL |
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Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
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RWR89N90R9FSS70 |
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Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RWR89N90R9FSS73 |
![]() |
Hersteller: Vishay Dale
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Description: RES 90.9 OHM 3W 1% WW AXIAL
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Military, Moisture Resistant, Non-Inductive
Package / Case: Axial
Temperature Coefficient: ±20ppm/°C
Size / Dimension: 0.187" Dia x 0.560" L (4.75mm x 14.22mm)
Composition: Wirewound
Operating Temperature: -55°C ~ 250°C
Number of Terminations: 2
Supplier Device Package: Axial
Failure Rate: S (0.001%)
Part Status: Active
Resistance: 90.9 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM9N90ECI C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Description: MOSFET N-CH 900V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
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TSM9N90ECZ C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Description: MOSFET N-CHANNEL 900V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XM-B9N9-0404D |
Hersteller: Quantic X-Microwave
RF Switch ICs Switches, ADRF5020BCCZNSMT
RF Switch ICs Switches, ADRF5020BCCZNSMT
Produkt ist nicht verfügbar
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Stück im Wert von UAH
XM-C9N9-0404D |
Hersteller: Quantic X-Microwave
RF Mixer Mixers, ML1-0110HSM-1
RF Mixer Mixers, ML1-0110HSM-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XR-B9N9-0404D |
Hersteller: Quantic X-Microwave
RF Switch ICs Switches, ADRF5020BCCZNSMT
RF Switch ICs Switches, ADRF5020BCCZNSMT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XR-C9N9-0404D |
Hersteller: Quantic X-Microwave
RF Mixer Mixers, ML1-0110HSM-1
RF Mixer Mixers, ML1-0110HSM-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
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