Suchergebnisse für "F11N" : > 60

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F11NM60N ST 09+
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
F11NM80 ST TO-220 08+
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
660-024NF11N 660-024NF11N Glenair metal_and_composite_covers.pdf Circular MIL Spec Tools, Hardware & Accessories COMMERCIAL
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+391.76 EUR
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AOTF11N70 AOTF11N70 ALPHA & OMEGA SEMICONDUCTOR AOTF11N70-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.87Ω
Mounting: THT
Gate charge: 37.5nC
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.23 EUR
Mindestbestellmenge: 58
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AOTF11N70 AOTF11N70 ALPHA&OMEGA info-taotf11n70.pdf Transistor N-Channel MOSFET; 700V; 30V; 870mOhm; 11A; 50W; -55°C ~ 150°C; AOTF11N70 TAOTF11n70
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+2.82 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N70 AOTF11N70 ALPHA&OMEGA info-taotf11n70.pdf Transistor N-Channel MOSFET; 700V; 30V; 870mOhm; 11A; 50W; -55°C ~ 150°C; AOTF11N70 TAOTF11n70
Anzahl je Verpackung: 10 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
10+2.82 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
AOWF11N60 AOWF11N60 ALPHA & OMEGA SEMICONDUCTOR AOWF11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
auf Bestellung 682 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
145+0.49 EUR
152+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 139
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D38999/33F11N D38999/33F11N AMPHENOL AIR Souriau%20MIL-DTL-38999%208D%20Series.pdf Category: D38999 Series III connectors
Description: Protection cover; MIL-DTL-38999 Series III; size 11; silver
Case: size 11
Material: aluminium alloy
Application - series/manufacturer: MIL-DTL-38999 Series III
Plating material: nickel
Type of connector accessories: protection cover
Colour: silver
Connector accessories features: with nylon rope
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.3 EUR
5+26.07 EUR
Mindestbestellmenge: 3
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D38999/52F11N TE Connectivity Category: Automotive connectors
Description: Protection cover
Type of connector accessories: protection cover
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
1+216.72 EUR
3+187.23 EUR
11+179.74 EUR
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FCBA1-0402F-11NJ BEL ds-ST-FCBA1-0402-series.pdf Category: Inductors
Description: Inductor: wire; SMD; 0402; 11nH; 640mA; ±5%; 1.19x0.71mm; 120mΩ
Mounting: SMD
Max resistance: 0.12Ω
Operating current: 0.64A
Tolerance: ±5%
Q factor: 25
Case - inch: 0402
Resonant frequency: 3.68GHz
Case - mm: 1005
Core material: ferrite
Type of inductor: wire
Operating temperature: -40...125°C
Inductance: 11nH
Body dimensions: 1.19x0.71mm
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
341+0.3 EUR
3085+0.29 EUR
Mindestbestellmenge: 341
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FCBA1-0402F-11NJ FCBA1-0402F-11NJ Signal Transformer ds-ST-FCBA1-0402-series.pdf Description: FIXED IND 11NH 640MA 120 MOHM
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.047" L x 0.028" W (1.19mm x 0.70mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 120mOhm Max
Q @ Freq: 25 @ 250MHz
Frequency - Self Resonant: 3.68GHz
Material - Core: Ferrite
Inductance Frequency - Test: 250 MHz
Supplier Device Package: 0402
Height - Seated (Max): 0.026" (0.66mm)
Inductance: 11 nH
Current Rating (Amps): 640 mA
auf Bestellung 4510 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
15+1.25 EUR
100+1.03 EUR
1000+0.84 EUR
Mindestbestellmenge: 12
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FCPF11N60 FCPF11N60 ONSEMI FCP11N60.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
33+2.23 EUR
Mindestbestellmenge: 19
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FCPF11N60 FCPF11N60 ON-Semiconductor info-tfcpf11n60.pdf description N-MOSFET 11A 600V 36W 0.38Ω FCPF11N60 TFCPF11N60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.62 EUR
Mindestbestellmenge: 10
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FCPF11N60 FCPF11N60 onsemi FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw description MOSFETs 600V 11A N-CH
auf Bestellung 8381 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.32 EUR
10+3.47 EUR
100+3.22 EUR
500+2.76 EUR
1000+2.69 EUR
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FCPF11N60 FCPF11N60 Fairchild Semiconductor FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw description Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
154+2.95 EUR
Mindestbestellmenge: 154
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FCPF11N60F FCPF11N60F ONSEMI fcpf11n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Gate charge: 52nC
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
24+3 EUR
Mindestbestellmenge: 16
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FCPF11N60F FCPF11N60F onsemi fcpf11n60f-d.pdf MOSFETs 600V NCH MOSFET
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.34 EUR
10+3.8 EUR
100+3.45 EUR
500+3.04 EUR
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FCPF11N60F FCPF11N60F onsemi fcpf11n60f-d.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1948 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
50+3.75 EUR
100+3.42 EUR
500+2.82 EUR
1000+2.63 EUR
Mindestbestellmenge: 3
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FCPF11N60NT FCPF11N60NT Fairchild Semiconductor FAIRS46027-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 14107 Stücke:
Lieferzeit 10-14 Tag (e)
118+3.85 EUR
Mindestbestellmenge: 118
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FCPF11N60T FCPF11N60T onsemi fcpf11n60t-d.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.97 EUR
50+3.59 EUR
100+3.27 EUR
500+2.7 EUR
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FCPF11N65 FCPF11N65 Fairchild Semiconductor 2156_FCPF11N65.pdf Description: TRANS MOSFET N-CH 600V 11A 3PIN(
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
167+2.73 EUR
Mindestbestellmenge: 167
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FQAF11N90C FQAF11N90C ONSEMI FQAF11N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Gate-source voltage: ±30V
Power dissipation: 120W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Technology: QFET®
Mounting: THT
Case: TO3PF
Kind of package: tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.92 EUR
18+4.12 EUR
Mindestbestellmenge: 13
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FQAF11N90C FQAF11N90C onsemi fqaf11n90c-d.pdf Description: MOSFET N-CH 900V 7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
30+5.05 EUR
Mindestbestellmenge: 2
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FQAF11N90C FQAF11N90C onsemi fqaf11n90c-d.pdf MOSFETs N-CH/900V/7A/A.QFET
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.89 EUR
10+5.05 EUR
100+4.21 EUR
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FQPF11N50CF FQPF11N50CF Fairchild Semiconductor FAIRS46439-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
170+2.67 EUR
Mindestbestellmenge: 170
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M83513/03-F11N M83513/03-F11N Glenair glenair_glens09598-1.pdf D-Sub Mil Spec Connectors MICRO DCON PIN 37CNT 18"TEFZEL WIRE
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1073.09 EUR
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M83513/03-F11N M83513/03-F11N Ulti-mate Connector ITT-Cannon-Microminiature-Connectors-Catalog.pdf D-Sub Cables D-Sub Mil Spec, CABLE, MALE, 37 POS, NICKEL
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+369.69 EUR
10+329.21 EUR
25+317.49 EUR
50+317.45 EUR
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M83513/03-F11N M83513/03-F11N ITT Cannon, LLC ITT-Cannon-Microminiature-Connectors-Catalog.pdf Description: MICRO 37C P /33 10CR 18" NI
Packaging: Bulk
Contact Finish: Gold
Color: Multiple, Individual
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 37
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+369.72 EUR
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M83513/04-F11N M83513/04-F11N Glenair glenair_glens09598-1.pdf D-Sub Mil Spec Connectors MICRO DCON SKT 37CNT 18"TEFZEL WIRE
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+754.97 EUR
10+685.48 EUR
25+661 EUR
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M83513/04-F11N M83513/04-F11N Ulti-mate Connector 04-F11N D-Sub Cables D-Sub Mil Spec, CABLE, FEMALE, 37 POS, NICKEL
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+369.48 EUR
10+329.01 EUR
25+317.31 EUR
50+317.26 EUR
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M83513/04-F11N M83513/04-F11N GLENAIR 3767445.pdf Description: GLENAIR - M83513/04-F11N - CABLE ASSY, MICRO D RCPT-FREE END, 18"
tariffCode: 85444290
Anzahl der Positionen: 37-polig
productTraceability: No
rohsCompliant: YES
Kabellänge - Imperial: 18"
Mantelfarbe: Multi-colored
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
Kabellänge - Metrisch: 457mm
Steckverbinder auf Steckverbinder: Micro-D Receptacle to Free End
usEccn: EAR99
Produktpalette: MIL-DTL- 83513 Series
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
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MS51SF1-1N33AIR MS51SF1-1N33AIR MinewSemi MS51SF1-1N33AIR.pdf Description: RF NRF52832 BLUETOOTH LE 5.0
Packaging: Tape & Reel (TR)
Sensitivity: -96dBm
Memory Size: 512kB Flash, 128kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Protocol: Bluetooth v5.4
Current - Receiving: 4.6mA
Current - Transmitting: 4.8mA
Antenna Type: PCB
Utilized IC / Part: nRF52833
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, UART
DigiKey Programmable: Verified
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.3 EUR
25+10.22 EUR
50+10.15 EUR
Mindestbestellmenge: 2
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MSJPF11N65-BP MSJPF11N65-BP MCC (Micro Commercial Components) MSJPF11N65(TO-220F).pdf Description: MOSFET N-CH 650V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 408mOhm @ 5.5A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 7341 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.49 EUR
50+2.23 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.5 EUR
2000+1.4 EUR
5000+1.36 EUR
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MSJPF11N65A-BP MSJPF11N65A-BP MCC (Micro Commercial Components) MSJPF11N65A(TO-220F).pdf Description: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 396mOhm @ 3.2A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
auf Bestellung 9820 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.89 EUR
50+2.43 EUR
100+2.19 EUR
500+1.77 EUR
1000+1.64 EUR
2000+1.53 EUR
5000+1.4 EUR
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MSJPF11N80A-BP MSJPF11N80A-BP MCC (Micro Commercial Components) MSJPF11N80A(TO-220F).pdf Description: N-CHANNEL MOSFET, TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 25W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 4880 Stücke:
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500+3.08 EUR
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MSJPF11N80A-BP MSJPF11N80A-BP Micro Commercial Components (MCC) MSJPF11N80A(TO-220F).pdf MOSFETs N-Ch 800V Super Junction Power FET
auf Bestellung 4936 Stücke:
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N74F11N,602 N74F11N,602 Nexperia USA Inc. 74F10%2C11.pdf Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-DIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 3360 Stücke:
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PTN15-F11NB20 PTN15-F11NB20 Same Sky ptn15.pdf Potentiometers rotary potentiometer, 15mm, horizontal, 1M ohm, notch rotor, linear, 20% tolerance
auf Bestellung 998 Stücke:
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10+1 EUR
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PTN15-F11NB20 PTN15-F11NB20 Same Sky (Formerly CUI Devices) ptn15.pdf Description: TRIMMER 1M OHM 0.2W PC PIN TOP
Power (Watts): 0.2W, 1/5W
Tolerance: ±20%
Packaging: Bag
Adjustment Type: Top Adjustment
Size / Dimension: Round - 0.591" Dia (15.00mm)
Mounting Type: Through Hole
Termination Style: PC Pins
Resistive Material: Carbon
Resistance: 1 mOhms
Number of Turns: 1.0
auf Bestellung 1008 Stücke:
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R5F11NGFAFB#10 R5F11NGFAFB#10 Renesas Electronics Corporation rl78h1d-data-sheet-rev110?r=1054336 Description: IC MCU 16BIT 96KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8b SAR, 5x10b Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
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R5F11NGFAFB#30 R5F11NGFAFB#30 Renesas Electronics Corporation rl78h1d-datasheet-rev100 Description: IC MCU 16BIT 96KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
10+5.01 EUR
25+4.61 EUR
100+4.17 EUR
250+3.97 EUR
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R5F11NGGAFB#10 R5F11NGGAFB#10 Renesas Electronics Corporation rl78h1d-data-sheet-rev110?r=1054336 Description: IC MCU 16BIT 128KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8b SAR, 5x10b Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.21 EUR
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25+4.31 EUR
100+3.89 EUR
250+3.69 EUR
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R5F11NGGAFB#30 R5F11NGGAFB#30 Renesas Electronics Corporation rl78h1d-datasheet-rev100 Description: IC MCU 16BIT 128KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.09 EUR
10+5.38 EUR
25+4.96 EUR
100+4.49 EUR
250+4.27 EUR
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R5F11NLFAFB#30 R5F11NLFAFB#30 Renesas Electronics Corporation rl78h1d-datasheet-rev100 Description: IC MCU 16BIT 96KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
10+5.01 EUR
25+4.61 EUR
160+4.06 EUR
320+3.92 EUR
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R5F11NMEAFB#30 R5F11NMEAFB#30 Renesas Electronics Corporation rl78h1d-datasheet-rev100 Description: IC MCU 16BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 46
DigiKey Programmable: Not Verified
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
10+4.58 EUR
25+4.21 EUR
119+3.77 EUR
357+3.55 EUR
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R5F11NMFAFB#30 R5F11NMFAFB#30 Renesas Electronics Corporation rl78h1d-datasheet-rev100 Description: IC MCU 16BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
10+5.01 EUR
25+4.61 EUR
119+4.13 EUR
357+3.9 EUR
595+3.81 EUR
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R5F11NMGAFB#30 R5F11NMGAFB#30 Renesas Electronics Corporation rl78h1d-datasheet-rev100 Description: IC MCU 16BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 46
DigiKey Programmable: Not Verified
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
10+4.51 EUR
25+4.14 EUR
119+3.7 EUR
357+3.49 EUR
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SN74F11N SN74F11N Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11 Logic Gates Triple 3-Input Posit ive-AND Gate
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.2 EUR
10+0.85 EUR
25+0.77 EUR
100+0.67 EUR
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SN74F11N SN74F11N Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11 Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 37679 Stücke:
Lieferzeit 10-14 Tag (e)
550+0.83 EUR
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SN74F11N SN74F11N Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11 Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 1068 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
21+0.85 EUR
25+0.77 EUR
100+0.67 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.58 EUR
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SN74F11NS SN74F11NS Texas Instruments NATLS18494-1.pdf?t.download=true&u=5oefqw Description: IC GATE AND 3CH 3-INP 14-SO
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1066+0.42 EUR
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SN74F11NSR SN74F11NSR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11 Description: IC GATE AND 3CH 3-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
22+0.82 EUR
25+0.74 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
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SN74F11NSR SN74F11NSR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11 Logic Gates Triple 3-Input Posit ive-AND Gate
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.15 EUR
10+0.82 EUR
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100+0.65 EUR
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1000+0.56 EUR
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SN74F11NSR SN74F11NSR Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11 Description: IC GATE AND 3CH 3-INP 14SO
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
572+0.79 EUR
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 16.5nC
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
37+1.93 EUR
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STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1372 Stücke:
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5+3.8 EUR
50+1.85 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.22 EUR
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STF11N60M2-EP STF11N60M2-EP STMicroelectronics en.DM00286212.pdf Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.54 EUR
10+2.26 EUR
100+1.54 EUR
500+1.23 EUR
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STF11N60M2-EP STF11N60M2-EP STMicroelectronics en.DM00286212.pdf MOSFETs N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP p
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.34 EUR
10+2.15 EUR
100+1.45 EUR
500+1.16 EUR
1000+1.06 EUR
2000+0.99 EUR
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STF11N65M2 STF11N65M2 STMicroelectronics en.DM00105472.pdf MOSFETs N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.84 EUR
10+2.45 EUR
100+1.66 EUR
500+1.39 EUR
1000+1.2 EUR
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STF11N65M5 STMicroelectronics en.DM00049307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
39+1.86 EUR
42+1.73 EUR
50+1.52 EUR
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F11NM60N
Hersteller: ST
09+
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)
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F11NM80
Hersteller: ST
TO-220 08+
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
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660-024NF11N metal_and_composite_covers.pdf
660-024NF11N
Hersteller: Glenair
Circular MIL Spec Tools, Hardware & Accessories COMMERCIAL
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+391.76 EUR
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AOTF11N70 AOTF11N70-DTE.pdf
AOTF11N70
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.87Ω
Mounting: THT
Gate charge: 37.5nC
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.23 EUR
Mindestbestellmenge: 58
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AOTF11N70 info-taotf11n70.pdf
AOTF11N70
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 700V; 30V; 870mOhm; 11A; 50W; -55°C ~ 150°C; AOTF11N70 TAOTF11n70
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.82 EUR
Mindestbestellmenge: 10
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AOTF11N70 info-taotf11n70.pdf
AOTF11N70
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 700V; 30V; 870mOhm; 11A; 50W; -55°C ~ 150°C; AOTF11N70 TAOTF11n70
Anzahl je Verpackung: 10 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.82 EUR
Mindestbestellmenge: 10
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AOWF11N60 AOWF11N60.pdf
AOWF11N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
auf Bestellung 682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
145+0.49 EUR
152+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 139
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D38999/33F11N Souriau%20MIL-DTL-38999%208D%20Series.pdf
D38999/33F11N
Hersteller: AMPHENOL AIR
Category: D38999 Series III connectors
Description: Protection cover; MIL-DTL-38999 Series III; size 11; silver
Case: size 11
Material: aluminium alloy
Application - series/manufacturer: MIL-DTL-38999 Series III
Plating material: nickel
Type of connector accessories: protection cover
Colour: silver
Connector accessories features: with nylon rope
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.3 EUR
5+26.07 EUR
Mindestbestellmenge: 3
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D38999/52F11N
Hersteller: TE Connectivity
Category: Automotive connectors
Description: Protection cover
Type of connector accessories: protection cover
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+216.72 EUR
3+187.23 EUR
11+179.74 EUR
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FCBA1-0402F-11NJ ds-ST-FCBA1-0402-series.pdf
Hersteller: BEL
Category: Inductors
Description: Inductor: wire; SMD; 0402; 11nH; 640mA; ±5%; 1.19x0.71mm; 120mΩ
Mounting: SMD
Max resistance: 0.12Ω
Operating current: 0.64A
Tolerance: ±5%
Q factor: 25
Case - inch: 0402
Resonant frequency: 3.68GHz
Case - mm: 1005
Core material: ferrite
Type of inductor: wire
Operating temperature: -40...125°C
Inductance: 11nH
Body dimensions: 1.19x0.71mm
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
341+0.3 EUR
3085+0.29 EUR
Mindestbestellmenge: 341
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FCBA1-0402F-11NJ ds-ST-FCBA1-0402-series.pdf
FCBA1-0402F-11NJ
Hersteller: Signal Transformer
Description: FIXED IND 11NH 640MA 120 MOHM
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.047" L x 0.028" W (1.19mm x 0.70mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 120mOhm Max
Q @ Freq: 25 @ 250MHz
Frequency - Self Resonant: 3.68GHz
Material - Core: Ferrite
Inductance Frequency - Test: 250 MHz
Supplier Device Package: 0402
Height - Seated (Max): 0.026" (0.66mm)
Inductance: 11 nH
Current Rating (Amps): 640 mA
auf Bestellung 4510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
15+1.25 EUR
100+1.03 EUR
1000+0.84 EUR
Mindestbestellmenge: 12
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FCPF11N60 description FCP11N60.pdf
FCPF11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
33+2.23 EUR
Mindestbestellmenge: 19
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FCPF11N60 description info-tfcpf11n60.pdf
FCPF11N60
Hersteller: ON-Semiconductor
N-MOSFET 11A 600V 36W 0.38Ω FCPF11N60 TFCPF11N60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.62 EUR
Mindestbestellmenge: 10
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FCPF11N60 description FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw
FCPF11N60
Hersteller: onsemi
MOSFETs 600V 11A N-CH
auf Bestellung 8381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.32 EUR
10+3.47 EUR
100+3.22 EUR
500+2.76 EUR
1000+2.69 EUR
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FCPF11N60 description FAIR-S-A0002365666-1.pdf?t.download=true&u=5oefqw
FCPF11N60
Hersteller: Fairchild Semiconductor
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+2.95 EUR
Mindestbestellmenge: 154
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FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Gate charge: 52nC
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
24+3 EUR
Mindestbestellmenge: 16
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FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: onsemi
MOSFETs 600V NCH MOSFET
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.34 EUR
10+3.8 EUR
100+3.45 EUR
500+3.04 EUR
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FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.25 EUR
50+3.75 EUR
100+3.42 EUR
500+2.82 EUR
1000+2.63 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCPF11N60NT FAIRS46027-1.pdf?t.download=true&u=5oefqw
FCPF11N60NT
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
auf Bestellung 14107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
118+3.85 EUR
Mindestbestellmenge: 118
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FCPF11N60T fcpf11n60t-d.pdf
FCPF11N60T
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
50+3.59 EUR
100+3.27 EUR
500+2.7 EUR
Mindestbestellmenge: 3
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FCPF11N65 2156_FCPF11N65.pdf
FCPF11N65
Hersteller: Fairchild Semiconductor
Description: TRANS MOSFET N-CH 600V 11A 3PIN(
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+2.73 EUR
Mindestbestellmenge: 167
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FQAF11N90C FQAF11N90C.pdf
FQAF11N90C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Gate-source voltage: ±30V
Power dissipation: 120W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Technology: QFET®
Mounting: THT
Case: TO3PF
Kind of package: tube
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.92 EUR
18+4.12 EUR
Mindestbestellmenge: 13
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FQAF11N90C fqaf11n90c-d.pdf
FQAF11N90C
Hersteller: onsemi
Description: MOSFET N-CH 900V 7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
30+5.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQAF11N90C fqaf11n90c-d.pdf
FQAF11N90C
Hersteller: onsemi
MOSFETs N-CH/900V/7A/A.QFET
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.89 EUR
10+5.05 EUR
100+4.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQPF11N50CF FAIRS46439-1.pdf?t.download=true&u=5oefqw
FQPF11N50CF
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
170+2.67 EUR
Mindestbestellmenge: 170
Im Einkaufswagen  Stück im Wert von  UAH
M83513/03-F11N glenair_glens09598-1.pdf
M83513/03-F11N
Hersteller: Glenair
D-Sub Mil Spec Connectors MICRO DCON PIN 37CNT 18"TEFZEL WIRE
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1073.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
M83513/03-F11N ITT-Cannon-Microminiature-Connectors-Catalog.pdf
M83513/03-F11N
Hersteller: Ulti-mate Connector
D-Sub Cables D-Sub Mil Spec, CABLE, MALE, 37 POS, NICKEL
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+369.69 EUR
10+329.21 EUR
25+317.49 EUR
50+317.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
M83513/03-F11N ITT-Cannon-Microminiature-Connectors-Catalog.pdf
M83513/03-F11N
Hersteller: ITT Cannon, LLC
Description: MICRO 37C P /33 10CR 18" NI
Packaging: Bulk
Contact Finish: Gold
Color: Multiple, Individual
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 37
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+369.72 EUR
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M83513/04-F11N glenair_glens09598-1.pdf
M83513/04-F11N
Hersteller: Glenair
D-Sub Mil Spec Connectors MICRO DCON SKT 37CNT 18"TEFZEL WIRE
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+754.97 EUR
10+685.48 EUR
25+661 EUR
Im Einkaufswagen  Stück im Wert von  UAH
M83513/04-F11N 04-F11N
M83513/04-F11N
Hersteller: Ulti-mate Connector
D-Sub Cables D-Sub Mil Spec, CABLE, FEMALE, 37 POS, NICKEL
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+369.48 EUR
10+329.01 EUR
25+317.31 EUR
50+317.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
M83513/04-F11N 3767445.pdf
M83513/04-F11N
Hersteller: GLENAIR
Description: GLENAIR - M83513/04-F11N - CABLE ASSY, MICRO D RCPT-FREE END, 18"
tariffCode: 85444290
Anzahl der Positionen: 37-polig
productTraceability: No
rohsCompliant: YES
Kabellänge - Imperial: 18"
Mantelfarbe: Multi-colored
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
Kabellänge - Metrisch: 457mm
Steckverbinder auf Steckverbinder: Micro-D Receptacle to Free End
usEccn: EAR99
Produktpalette: MIL-DTL- 83513 Series
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MS51SF1-1N33AIR MS51SF1-1N33AIR.pdf
MS51SF1-1N33AIR
Hersteller: MinewSemi
Description: RF NRF52832 BLUETOOTH LE 5.0
Packaging: Tape & Reel (TR)
Sensitivity: -96dBm
Memory Size: 512kB Flash, 128kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Protocol: Bluetooth v5.4
Current - Receiving: 4.6mA
Current - Transmitting: 4.8mA
Antenna Type: PCB
Utilized IC / Part: nRF52833
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, UART
DigiKey Programmable: Verified
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.3 EUR
25+10.22 EUR
50+10.15 EUR
Mindestbestellmenge: 2
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MSJPF11N65-BP MSJPF11N65(TO-220F).pdf
MSJPF11N65-BP
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 650V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 408mOhm @ 5.5A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 7341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
50+2.23 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.5 EUR
2000+1.4 EUR
5000+1.36 EUR
Mindestbestellmenge: 4
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MSJPF11N65A-BP MSJPF11N65A(TO-220F).pdf
MSJPF11N65A-BP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 396mOhm @ 3.2A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
auf Bestellung 9820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
50+2.43 EUR
100+2.19 EUR
500+1.77 EUR
1000+1.64 EUR
2000+1.53 EUR
5000+1.4 EUR
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MSJPF11N80A-BP MSJPF11N80A(TO-220F).pdf
MSJPF11N80A-BP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 25W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+5.23 EUR
100+3.72 EUR
500+3.08 EUR
1000+2.87 EUR
2000+2.7 EUR
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MSJPF11N80A-BP MSJPF11N80A(TO-220F).pdf
MSJPF11N80A-BP
Hersteller: Micro Commercial Components (MCC)
MOSFETs N-Ch 800V Super Junction Power FET
auf Bestellung 4936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.27 EUR
10+4.17 EUR
100+3.06 EUR
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N74F11N,602 74F10%2C11.pdf
N74F11N,602
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-DIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
274+1.67 EUR
Mindestbestellmenge: 274
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PTN15-F11NB20 ptn15.pdf
PTN15-F11NB20
Hersteller: Same Sky
Potentiometers rotary potentiometer, 15mm, horizontal, 1M ohm, notch rotor, linear, 20% tolerance
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.2 EUR
10+1 EUR
25+0.88 EUR
100+0.83 EUR
250+0.77 EUR
500+0.73 EUR
1000+0.69 EUR
Mindestbestellmenge: 3
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PTN15-F11NB20 ptn15.pdf
PTN15-F11NB20
Hersteller: Same Sky (Formerly CUI Devices)
Description: TRIMMER 1M OHM 0.2W PC PIN TOP
Power (Watts): 0.2W, 1/5W
Tolerance: ±20%
Packaging: Bag
Adjustment Type: Top Adjustment
Size / Dimension: Round - 0.591" Dia (15.00mm)
Mounting Type: Through Hole
Termination Style: PC Pins
Resistive Material: Carbon
Resistance: 1 mOhms
Number of Turns: 1.0
auf Bestellung 1008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
18+1 EUR
25+0.93 EUR
50+0.88 EUR
100+0.83 EUR
250+0.77 EUR
500+0.73 EUR
1000+0.69 EUR
Mindestbestellmenge: 15
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R5F11NGFAFB#10 rl78h1d-data-sheet-rev110?r=1054336
R5F11NGFAFB#10
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 96KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8b SAR, 5x10b Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+4.19 EUR
25+3.85 EUR
100+3.47 EUR
250+3.29 EUR
500+3.18 EUR
2000+3.02 EUR
Mindestbestellmenge: 4
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R5F11NGFAFB#30 rl78h1d-datasheet-rev100
R5F11NGFAFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 96KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+5.01 EUR
25+4.61 EUR
100+4.17 EUR
250+3.97 EUR
500+3.84 EUR
Mindestbestellmenge: 3
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R5F11NGGAFB#10 rl78h1d-data-sheet-rev110?r=1054336
R5F11NGGAFB#10
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 128KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8b SAR, 5x10b Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.69 EUR
25+4.31 EUR
100+3.89 EUR
250+3.69 EUR
500+3.57 EUR
Mindestbestellmenge: 3
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R5F11NGGAFB#30 rl78h1d-datasheet-rev100
R5F11NGGAFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 128KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 22
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.09 EUR
10+5.38 EUR
25+4.96 EUR
100+4.49 EUR
250+4.27 EUR
500+4.13 EUR
Mindestbestellmenge: 3
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R5F11NLFAFB#30 rl78h1d-datasheet-rev100
R5F11NLFAFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 96KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+5.01 EUR
25+4.61 EUR
160+4.06 EUR
320+3.92 EUR
Mindestbestellmenge: 3
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R5F11NMEAFB#30 rl78h1d-datasheet-rev100
R5F11NMEAFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 46
DigiKey Programmable: Not Verified
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
10+4.58 EUR
25+4.21 EUR
119+3.77 EUR
357+3.55 EUR
Mindestbestellmenge: 3
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R5F11NMFAFB#30 rl78h1d-datasheet-rev100
R5F11NMFAFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 46
DigiKey Programmable: Not Verified
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+5.01 EUR
25+4.61 EUR
119+4.13 EUR
357+3.9 EUR
595+3.81 EUR
Mindestbestellmenge: 3
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R5F11NMGAFB#30 rl78h1d-datasheet-rev100
R5F11NMGAFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 5x8/10b SAR, Sigma-Delta; D/A 1x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: CSI, I2C, SPI, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 46
DigiKey Programmable: Not Verified
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.51 EUR
25+4.14 EUR
119+3.7 EUR
357+3.49 EUR
Mindestbestellmenge: 3
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SN74F11N suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11
SN74F11N
Hersteller: Texas Instruments
Logic Gates Triple 3-Input Posit ive-AND Gate
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.2 EUR
10+0.85 EUR
25+0.77 EUR
100+0.67 EUR
Mindestbestellmenge: 3
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SN74F11N suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11
SN74F11N
Hersteller: Texas Instruments
Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 37679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
550+0.83 EUR
Mindestbestellmenge: 550
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SN74F11N suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11
SN74F11N
Hersteller: Texas Instruments
Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 1068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
21+0.85 EUR
25+0.77 EUR
100+0.67 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.58 EUR
Mindestbestellmenge: 15
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SN74F11NS NATLS18494-1.pdf?t.download=true&u=5oefqw
SN74F11NS
Hersteller: Texas Instruments
Description: IC GATE AND 3CH 3-INP 14-SO
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1066+0.42 EUR
Mindestbestellmenge: 1066
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SN74F11NSR suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11
SN74F11NSR
Hersteller: Texas Instruments
Description: IC GATE AND 3CH 3-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
22+0.82 EUR
25+0.74 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 16
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SN74F11NSR suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11
SN74F11NSR
Hersteller: Texas Instruments
Logic Gates Triple 3-Input Posit ive-AND Gate
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.15 EUR
10+0.82 EUR
25+0.74 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 3
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SN74F11NSR suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fsn74f11
SN74F11NSR
Hersteller: Texas Instruments
Description: IC GATE AND 3CH 3-INP 14SO
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 3
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 3
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
572+0.79 EUR
Mindestbestellmenge: 572
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STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 16.5nC
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
37+1.93 EUR
Mindestbestellmenge: 30
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STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.8 EUR
50+1.85 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 5
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STF11N60M2-EP en.DM00286212.pdf
STF11N60M2-EP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.26 EUR
100+1.54 EUR
500+1.23 EUR
Mindestbestellmenge: 5
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STF11N60M2-EP en.DM00286212.pdf
STF11N60M2-EP
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP p
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.34 EUR
10+2.15 EUR
100+1.45 EUR
500+1.16 EUR
1000+1.06 EUR
2000+0.99 EUR
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STF11N65M2 en.DM00105472.pdf
STF11N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.84 EUR
10+2.45 EUR
100+1.66 EUR
500+1.39 EUR
1000+1.2 EUR
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STF11N65M5 en.DM00049307.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 17nC
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
39+1.86 EUR
42+1.73 EUR
50+1.52 EUR
Mindestbestellmenge: 37
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