Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 30 В
Drain-Strom Idd, A: 3,9 А
Durchlasswiderstand Rds(on), Ohm: 0,05 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 520/25
Bemerkung: Zwei Transistoren in einem Gehäuse
Montage: SMD

Hersteller: HXY MOSFET
Transistor 2xN-Channel MOSFET; 30V; 20V; 42mOhm; 6A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; SP001577432; SP001563422; IRF7303 HXY MOSFET TIRF7303 HXY
Anzahl je Verpackung: 50 Stücke

Hersteller: UMW
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; SP001577432; SP001563422; IRF7303TR UMW TIRF7303 UMW
Anzahl je Verpackung: 50 Stücke

Hersteller: UMW
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; SP001577432; SP001563422; IRF7303TR UMW TIRF7303 UMW
Anzahl je Verpackung: 50 Stücke

Hersteller: TECH PUBLIC
30V 7A 35mOhm@10V 1.3W 3V 2 N-Channel SOIC-8 MOSFETs Substitute: IRF7303TR; IRF7303 SOIC8(T/R) TECH PUBLIC TIRF7303 TEC
Anzahl je Verpackung: 100 Stücke

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902

Hersteller: Infineon Technologies
MOSFETs PLANAR FET

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC N T/R

Hersteller: INFINEON
Description: INFINEON - IRF7303TRPBFXTMA1 - Dual-MOSFET, Zweifach n-Kanal, 30 V, 4.9 A, 0.05 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 4.9A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SO-8
Anzahl der Pins: 8Pin(s)
Produktpalette: HEXFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.05ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C

Hersteller: INFINEON
Description: INFINEON - IRF7303TRPBFXTMA1 - Dual-MOSFET, Zweifach n-Kanal, 30 V, 4.9 A, 0.05 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 4.9A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SO-8
Anzahl der Pins: 8Pin(s)
Produktpalette: HEXFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.05ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC N T/R

Hersteller: IR
SO-8

Hersteller: IR

Hersteller: IRF
09+

Hersteller: International Rectifier
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; IRF7303 TIRF7303

Hersteller: UMW
Description: MOSFET 2N-CH 30V 4.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP

Hersteller: HT SEMI
30V 7.7A 21m?@10V,7.7A 2W 2.5V 2 N-Channel SOP-8 MOSFETs ODPOWIEDNIK: IRF7303; PTS4842 SOP8 HT SEMI TIRF7303 HTSEMI
Anzahl je Verpackung: 500 Stücke

Hersteller: YFW
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Substitute: IRF7303TR; YFW6H03S SOP8(T/R) YFW TIRF7303 YFW
Anzahl je Verpackung: 100 Stücke

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 30 V
Drain-Strom Idd, A: 4,9 A
Durchlasswiderstand Rds(on), Ohm: 0,05 Ohm
Bemerkung: Zwei Transistoren in einem Gehäuse
Montage: SMD

Transistoren > MOSFET N-CH

Transistoren > MOSFET N-CH

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key

Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET

Hersteller: International Rectifier
Сдвоенный HEXFET 5-ого поколения с N-CH и низким сопротивл. с-и 0,05 Ом U=-30 В I=4,9 А SOIC8 Транзистори

Hersteller: International Rectifier/Infineon
2N-канальний ПТ, Udss, В = 30, Id = 4,9 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 520 @ 25, Qg, нКл = 25 @ 10 В, Rds = 50 мОм @ 2,4 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 1 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke

Hersteller: International Rectifier
Сдвоенный HEXFET 5-ого поколения с N-CH и низким сопротивл. с-и 0,05 Ом U=-30 В I=4,9 А SOIC8 Транзистори

Hersteller: International Rectifier
Сдвоенный HEXFET 5-ого поколения с N-CH и низким сопротивл. с-и 0,05 Ом U=-30 В I=4,9 А SOIC8 Транзистори

Hersteller: International Rectifier/Infineon
2N-канальний ПТ, Udss, В = 30, Id = 4,9 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 520 @ 25, Qg, нКл = 25 @ 10 В, Rds = 50 мОм @ 2,4 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 1 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Очікується: 475 Од. ви
Anzahl je Verpackung: 4000 Stücke

Hersteller: Infineon
IRF7303TRPBF IRF7303PBF MOSFET 2N-CH 30V 4.9A 8SO Транзистори

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5.3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete

Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 100µA
Supplier Device Package: 8-SOIC

Hersteller: UMW
Description: MOSFET 2N-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP

Hersteller: IR
Транз. Пол. МП 2N-HEXFET logik SO8 Udss=30V; Id=4,9A; Pdmax=2W; Rds=0,05 Ohm   Транзистори польові

Hersteller: Diodes Incorporated
MOSFETs Dl 60V N-Chnl UMOS