Suchergebnisse für "tw70" : 58

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SCTW70N120G2V SCTW70N120G2V STMicroelectronics sctw70n120g2v.pdf Description: TRANS SJT N-CH 1200V 91A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 547W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.80 EUR
30+39.42 EUR
120+39.17 EUR
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STW70N60DM2 STW70N60DM2 STMicroelectronics STW70N60DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.34 EUR
7+11.10 EUR
Mindestbestellmenge: 5
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STW70N60DM2 STW70N60DM2 STMicroelectronics STW70N60DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.34 EUR
7+11.10 EUR
510+10.67 EUR
Mindestbestellmenge: 5
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STW70N60DM6-4 STW70N60DM6-4 STMicroelectronics stw70n60dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.60 EUR
6+12.16 EUR
Mindestbestellmenge: 4
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STW70N60DM6-4 STW70N60DM6-4 STMicroelectronics stw70n60dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.60 EUR
6+12.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STW70N60M2 ST en.DM00078630.pdf Transistor N-Channel MOSFET; 650V; 25V; 40mOhm; 68A; 450W; -55°C ~ 150°C; STW70N60M2 TSTW70N60M2
Anzahl je Verpackung: 2 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
2+25.80 EUR
Mindestbestellmenge: 2
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STW70N60M2 STW70N60M2 STMicroelectronics en.DM00078630.pdf Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.30 EUR
30+10.25 EUR
120+8.71 EUR
510+8.02 EUR
Mindestbestellmenge: 2
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PGKTW70SDAD1SD Кольоровий графічний TFT індикатор 7.0", з ємнісним тач-падом I2C FT5446DQ9, інтерфейс RGB, видима область 153.6 x 86.64 мм, 440 cd/m2
auf Bestellung 1 Stücke:
Lieferzeit 7-21 Tag (e)
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PGKTW70SNCE1EO Кольоровий графічний TFT індикатор 7.0", інтерфейс LVDS Receiver 18 bit 256K кольорів, видима область 152.4 x 91.44 мм, 800 cd/m2
auf Bestellung 1 Stücke:
Lieferzeit 7-21 Tag (e)
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STW70N10F4 STM en.CD00218149.pdf
auf Bestellung 92270 Stücke:
Lieferzeit 21-28 Tag (e)
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9002 9002 VISATON VS-TW-70.pdf Category: Speakers
Description: Loudspeaker; general purpose; 40W; 8Ω; 64x64x29mm; 800÷20000Hz
Type of sound transducer: loudspeaker
Kind of loudspeaker: general purpose
Power: 40W
Maximum power: 80W
Impedance:
Body dimensions: 64x64x29mm
Sound frequency: 0.8...20kHz
Panel cutout diameter: 64mm
Sound level: 90dB
Resonant frequency: 1.5kHz
Colour: black
Diameter: 64mm
Height: 29mm
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.05 EUR
5+15.72 EUR
10+15.63 EUR
Mindestbestellmenge: 4
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T-WORK7000-160-160-0.5 T-WORK7000-160-160-0.5 Shiu Li Technology Co., Ltd. T-work7000.pdf Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0200" (0.508mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
1+124.10 EUR
10+117.20 EUR
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T-WORK7000-160-160-1.0 T-WORK7000-160-160-1.0 Shiu Li Technology Co., Ltd. T-work7000.pdf Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0390" (0.991mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
1+152.06 EUR
10+145.36 EUR
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T-WORK7000-160-160-1.5 T-WORK7000-160-160-1.5 Shiu Li Technology Co., Ltd. T-work7000.pdf Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0591" (1.500mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+188.80 EUR
10+182.81 EUR
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T-WORK7000-160-160-2.5 T-WORK7000-160-160-2.5 Shiu Li Technology Co., Ltd. T-work7000.pdf Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0980" (2.489mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
1+337.18 EUR
12+295.43 EUR
27+282.92 EUR
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T-WORK7000-160-160-3.0 T-WORK7000-160-160-3.0 Shiu Li Technology Co., Ltd. T-work7000.pdf Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.118" (3.00mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
1+313.14 EUR
10+312.54 EUR
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VS-TW-70
Produktcode: 115256
zu Favoriten hinzufügen Lieblingsprodukt

Gehäuse, Halter, Montage- und Installationselemente > Lautsprecher, Mikrofone, Summer
Produkt ist nicht verfügbar
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TW 70 - 8 OHM Visaton GmbH & Co. KG TW%2070_0.pdf Description: SPEAKER 8OHM 40W TOP PORT 90DB
Packaging: Bulk
Shape: Round, Square Frame
Type: Tweeter
Technology: Magnetic
Termination: Quick Connect
Frequency - Self Resonant: 1.5kHz
Port Location: Top
Height - Seated (Max): 1.169" (29.70mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 60 W
Power - Rated: 40 W
Frequency Range: 800 Hz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
Produkt ist nicht verfügbar
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TW-700 TW-700 Excelta Corporation TW-700.pdf Description: TWEEZER KITSET -- ANTI-MAG. SS -
Packaging: Retail Package
Features: Anti-Magnetic
Material: Stainless Steel
Tip Shape: Assorted
Part Status: Active
Produkt ist nicht verfügbar
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TW7000 IFM ELECTRONIC TW7000-00_EN-GB.pdf Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
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TW7000 TW7000 ifm efector, inc. Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 50°C ~ 500°C
Part Status: Active
Produkt ist nicht verfügbar
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TW7001 IFM ELECTRONIC TW7001-00_EN-GB.pdf Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
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TW7001 TW7001 ifm efector, inc. Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 250°C ~ 1250°C
Part Status: Active
Produkt ist nicht verfügbar
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TW7011 IFM ELECTRONIC TW7011-00_EN-GB.pdf Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
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TW7011 TW7011 ifm efector, inc. Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 350°C ~ 1350°C
Part Status: Active
Produkt ist nicht verfügbar
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12TW70-514N Honeywell Sensing and Productivity Solutions sps-siot-micro-switch-tw-toggle-product-sheet-005431-3-en-ciid-156490.pdf Description: SWITCH TOGGLE DPDT 5A 125V
Packaging: Bulk
Current Rating (Amps): 5A (AC)
Mounting Type: Panel Mount
Circuit: DPDT
Switch Function: On-Off-Mom
Operating Temperature: -65°C ~ 71°C
Termination Style: Solder Lug
Illumination: Non-Illuminated
Bushing Thread: 15/32-32
Actuator Length: 20.83mm
Actuator Type: Locking Lever
Ingress Protection: Environment Sealed
Panel Cutout Dimensions: Circular - 12.40mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Produkt ist nicht verfügbar
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SCTW70N120G2V STMicroelectronics sctw70n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
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SCTW70N120G2V STMicroelectronics sctw70n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N10F4 STW70N10F4 STMicroelectronics en.CD00218149.pdf Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
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STW70N60DM2 STW70N60DM2 STMicroelectronics stw70n60dm2.pdf Description: N-channel 600 V, 37 mOhm typ., 6
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Produkt ist nicht verfügbar
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STW70N60DM6 STMicroelectronics stw70n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Produkt ist nicht verfügbar
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STW70N60DM6 STMicroelectronics stw70n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N60DM6 STW70N60DM6 STMicroelectronics stwa70n60dm6.pdf Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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STW70N60DM6-4 STW70N60DM6-4 STMicroelectronics stw70n60dm6-4.pdf Description: MOSFET N-CH 600V 62A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
Produkt ist nicht verfügbar
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STW70N60M2 STW70N60M2 STMicroelectronics STW70N60M2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Produkt ist nicht verfügbar
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STW70N60M2 STW70N60M2 STMicroelectronics STW70N60M2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N60M2-4 STMicroelectronics stw70n60m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Produkt ist nicht verfügbar
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STW70N60M2-4 STMicroelectronics stw70n60m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N60M2-4 STW70N60M2-4 STMicroelectronics stw70n60m2-4.pdf Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65DM6 STMicroelectronics stw70n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65DM6 STMicroelectronics stw70n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65DM6 STW70N65DM6 STMicroelectronics stw70n65dm6.pdf Description: MOSFET N-CH 650V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65DM6-4 STMicroelectronics stw70n65dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65DM6-4 STMicroelectronics stw70n65dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65DM6-4 STW70N65DM6-4 STMicroelectronics stw70n65dm6-4.pdf Description: MOSFET N-CH 650V 68A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW70N65M2 STMicroelectronics stw70n65m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65M2 STMicroelectronics stw70n65m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW70N65M2 STW70N65M2 STMicroelectronics en.DM00267729.pdf Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
Produkt ist nicht verfügbar
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T-WORK7000-160-160-2.0 T-WORK7000-160-160-2.0 Shiu Li Technology Co., Ltd. T-work7000.pdf Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0790" (2.000mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Produkt ist nicht verfügbar
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SCTW70N120G2V sctw70n120g2v.pdf
SCTW70N120G2V
Hersteller: STMicroelectronics
Description: TRANS SJT N-CH 1200V 91A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 547W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.80 EUR
30+39.42 EUR
120+39.17 EUR
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STW70N60DM2 STW70N60DM2-DTE.pdf
STW70N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.34 EUR
7+11.10 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STW70N60DM2 STW70N60DM2-DTE.pdf
STW70N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.34 EUR
7+11.10 EUR
510+10.67 EUR
Mindestbestellmenge: 5
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STW70N60DM6-4 stw70n60dm6-4.pdf
STW70N60DM6-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.60 EUR
6+12.16 EUR
Mindestbestellmenge: 4
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STW70N60DM6-4 stw70n60dm6-4.pdf
STW70N60DM6-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.60 EUR
6+12.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STW70N60M2 en.DM00078630.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 650V; 25V; 40mOhm; 68A; 450W; -55°C ~ 150°C; STW70N60M2 TSTW70N60M2
Anzahl je Verpackung: 2 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+25.80 EUR
Mindestbestellmenge: 2
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STW70N60M2 en.DM00078630.pdf
STW70N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.30 EUR
30+10.25 EUR
120+8.71 EUR
510+8.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PGKTW70SDAD1SD
Кольоровий графічний TFT індикатор 7.0", з ємнісним тач-падом I2C FT5446DQ9, інтерфейс RGB, видима область 153.6 x 86.64 мм, 440 cd/m2
auf Bestellung 1 Stücke:
Lieferzeit 7-21 Tag (e)
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PGKTW70SNCE1EO
Кольоровий графічний TFT індикатор 7.0", інтерфейс LVDS Receiver 18 bit 256K кольорів, видима область 152.4 x 91.44 мм, 800 cd/m2
auf Bestellung 1 Stücke:
Lieferzeit 7-21 Tag (e)
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STW70N10F4 en.CD00218149.pdf
Hersteller: STM
auf Bestellung 92270 Stücke:
Lieferzeit 21-28 Tag (e)
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9002 VS-TW-70.pdf
9002
Hersteller: VISATON
Category: Speakers
Description: Loudspeaker; general purpose; 40W; 8Ω; 64x64x29mm; 800÷20000Hz
Type of sound transducer: loudspeaker
Kind of loudspeaker: general purpose
Power: 40W
Maximum power: 80W
Impedance:
Body dimensions: 64x64x29mm
Sound frequency: 0.8...20kHz
Panel cutout diameter: 64mm
Sound level: 90dB
Resonant frequency: 1.5kHz
Colour: black
Diameter: 64mm
Height: 29mm
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.05 EUR
5+15.72 EUR
10+15.63 EUR
Mindestbestellmenge: 4
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T-WORK7000-160-160-0.5 T-work7000.pdf
T-WORK7000-160-160-0.5
Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0200" (0.508mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+124.10 EUR
10+117.20 EUR
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T-WORK7000-160-160-1.0 T-work7000.pdf
T-WORK7000-160-160-1.0
Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0390" (0.991mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+152.06 EUR
10+145.36 EUR
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T-WORK7000-160-160-1.5 T-work7000.pdf
T-WORK7000-160-160-1.5
Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0591" (1.500mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+188.80 EUR
10+182.81 EUR
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T-WORK7000-160-160-2.5 T-work7000.pdf
T-WORK7000-160-160-2.5
Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0980" (2.489mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+337.18 EUR
12+295.43 EUR
27+282.92 EUR
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T-WORK7000-160-160-3.0 T-work7000.pdf
T-WORK7000-160-160-3.0
Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.118" (3.00mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+313.14 EUR
10+312.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VS-TW-70
Produktcode: 115256
zu Favoriten hinzufügen Lieblingsprodukt

Produkt ist nicht verfügbar
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TW 70 - 8 OHM TW%2070_0.pdf
Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM 40W TOP PORT 90DB
Packaging: Bulk
Shape: Round, Square Frame
Type: Tweeter
Technology: Magnetic
Termination: Quick Connect
Frequency - Self Resonant: 1.5kHz
Port Location: Top
Height - Seated (Max): 1.169" (29.70mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 60 W
Power - Rated: 40 W
Frequency Range: 800 Hz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
Produkt ist nicht verfügbar
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TW-700 TW-700.pdf
TW-700
Hersteller: Excelta Corporation
Description: TWEEZER KITSET -- ANTI-MAG. SS -
Packaging: Retail Package
Features: Anti-Magnetic
Material: Stainless Steel
Tip Shape: Assorted
Part Status: Active
Produkt ist nicht verfügbar
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TW7000 TW7000-00_EN-GB.pdf
Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
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TW7000
TW7000
Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 50°C ~ 500°C
Part Status: Active
Produkt ist nicht verfügbar
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TW7001 TW7001-00_EN-GB.pdf
Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
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TW7001
TW7001
Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 250°C ~ 1250°C
Part Status: Active
Produkt ist nicht verfügbar
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TW7011 TW7011-00_EN-GB.pdf
Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
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TW7011
TW7011
Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 350°C ~ 1350°C
Part Status: Active
Produkt ist nicht verfügbar
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12TW70-514N sps-siot-micro-switch-tw-toggle-product-sheet-005431-3-en-ciid-156490.pdf
Hersteller: Honeywell Sensing and Productivity Solutions
Description: SWITCH TOGGLE DPDT 5A 125V
Packaging: Bulk
Current Rating (Amps): 5A (AC)
Mounting Type: Panel Mount
Circuit: DPDT
Switch Function: On-Off-Mom
Operating Temperature: -65°C ~ 71°C
Termination Style: Solder Lug
Illumination: Non-Illuminated
Bushing Thread: 15/32-32
Actuator Length: 20.83mm
Actuator Type: Locking Lever
Ingress Protection: Environment Sealed
Panel Cutout Dimensions: Circular - 12.40mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Produkt ist nicht verfügbar
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SCTW70N120G2V sctw70n120g2v.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
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SCTW70N120G2V sctw70n120g2v.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N10F4 en.CD00218149.pdf
STW70N10F4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
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STW70N60DM2 stw70n60dm2.pdf
STW70N60DM2
Hersteller: STMicroelectronics
Description: N-channel 600 V, 37 mOhm typ., 6
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
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STW70N60DM6 stw70n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
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STW70N60DM6 stw70n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N60DM6 stwa70n60dm6.pdf
STW70N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STW70N60DM6-4 stw70n60dm6-4.pdf
STW70N60DM6-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
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STW70N60M2 STW70N60M2.pdf
STW70N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
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STW70N60M2 STW70N60M2.pdf
STW70N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N60M2-4 stw70n60m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
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STW70N60M2-4 stw70n60m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N60M2-4 stw70n60m2-4.pdf
STW70N60M2-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
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STW70N65DM6 stw70n65dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
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STW70N65DM6 stw70n65dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N65DM6 stw70n65dm6.pdf
STW70N65DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
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STW70N65DM6-4 stw70n65dm6-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
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STW70N65DM6-4 stw70n65dm6-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N65DM6-4 stw70n65dm6-4.pdf
STW70N65DM6-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 68A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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STW70N65M2 stw70n65m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
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STW70N65M2 stw70n65m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N65M2 en.DM00267729.pdf
STW70N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
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T-WORK7000-160-160-2.0 T-work7000.pdf
T-WORK7000-160-160-2.0
Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0790" (2.000mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
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