Suchergebnisse für "tw70" : 58
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Stück im Wert von UAH
Mindestbestellmenge: 5
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
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SCTW70N120G2V | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V Power Dissipation (Max): 547W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 1mA Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V |
auf Bestellung 428 Stücke: Lieferzeit 10-14 Tag (e) |
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STW70N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247 Polarisation: unipolar Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Drain-source voltage: 600V Drain current: 42A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 446W Mounting: THT |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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STW70N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247 Polarisation: unipolar Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Drain-source voltage: 600V Drain current: 42A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 446W Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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STW70N60DM6-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Polarisation: unipolar Kind of package: tube Version: ESD Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 390W Mounting: THT |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STW70N60DM6-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Polarisation: unipolar Kind of package: tube Version: ESD Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 390W Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STW70N60M2 | ST |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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STW70N60M2 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V |
auf Bestellung 763 Stücke: Lieferzeit 10-14 Tag (e) |
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PGKTW70SDAD1SD | Кольоровий графічний TFT індикатор 7.0", з ємнісним тач-падом I2C FT5446DQ9, інтерфейс RGB, видима область 153.6 x 86.64 мм, 440 cd/m2 |
auf Bestellung 1 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
PGKTW70SNCE1EO | Кольоровий графічний TFT індикатор 7.0", інтерфейс LVDS Receiver 18 bit 256K кольорів, видима область 152.4 x 91.44 мм, 800 cd/m2 |
auf Bestellung 1 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
STW70N10F4 | STM |
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auf Bestellung 92270 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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9002 | VISATON |
![]() Description: Loudspeaker; general purpose; 40W; 8Ω; 64x64x29mm; 800÷20000Hz Type of sound transducer: loudspeaker Kind of loudspeaker: general purpose Power: 40W Maximum power: 80W Impedance: 8Ω Body dimensions: 64x64x29mm Sound frequency: 0.8...20kHz Panel cutout diameter: 64mm Sound level: 90dB Resonant frequency: 1.5kHz Colour: black Diameter: 64mm Height: 29mm |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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T-WORK7000-160-160-0.5 | Shiu Li Technology Co., Ltd. |
![]() Packaging: Tray Color: Gray, Green Material: Silicone Shape: Square Thickness: 0.0200" (0.508mm) Type: Gap Filler Pad, Sheet Usage: Thermally Conductive Outline: 160.00mm x 160.00mm Thermal Conductivity: 11W/m-K Adhesive: Tacky - Both Sides Part Status: Active |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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T-WORK7000-160-160-1.0 | Shiu Li Technology Co., Ltd. |
![]() Packaging: Tray Color: Gray, Green Material: Silicone Shape: Square Thickness: 0.0390" (0.991mm) Type: Gap Filler Pad, Sheet Usage: Thermally Conductive Outline: 160.00mm x 160.00mm Thermal Conductivity: 11W/m-K Adhesive: Tacky - Both Sides Part Status: Active |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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T-WORK7000-160-160-1.5 | Shiu Li Technology Co., Ltd. |
![]() Packaging: Tray Color: Gray, Green Material: Silicone Shape: Square Thickness: 0.0591" (1.500mm) Type: Gap Filler Pad, Sheet Usage: Thermally Conductive Outline: 160.00mm x 160.00mm Thermal Conductivity: 11W/m-K Adhesive: Tacky - Both Sides Part Status: Active |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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T-WORK7000-160-160-2.5 | Shiu Li Technology Co., Ltd. |
![]() Packaging: Tray Color: Gray, Green Material: Silicone Shape: Square Thickness: 0.0980" (2.489mm) Type: Gap Filler Pad, Sheet Usage: Thermally Conductive Outline: 160.00mm x 160.00mm Thermal Conductivity: 11W/m-K Adhesive: Tacky - Both Sides Part Status: Active |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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T-WORK7000-160-160-3.0 | Shiu Li Technology Co., Ltd. |
![]() Packaging: Tray Color: Gray, Green Material: Silicone Shape: Square Thickness: 0.118" (3.00mm) Type: Gap Filler Pad, Sheet Usage: Thermally Conductive Outline: 160.00mm x 160.00mm Thermal Conductivity: 11W/m-K Adhesive: Tacky - Both Sides Part Status: Active |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-TW-70 Produktcode: 115256
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Lieblingsprodukt
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Gehäuse, Halter, Montage- und Installationselemente > Lautsprecher, Mikrofone, Summer |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||
TW 70 - 8 OHM | Visaton GmbH & Co. KG |
![]() Packaging: Bulk Shape: Round, Square Frame Type: Tweeter Technology: Magnetic Termination: Quick Connect Frequency - Self Resonant: 1.5kHz Port Location: Top Height - Seated (Max): 1.169" (29.70mm) Part Status: Active Impedance: 8 Ohms Power - Max: 60 W Power - Rated: 40 W Frequency Range: 800 Hz ~ 20 kHz Efficiency - dBA: 90.00 Efficiency - Testing: 1W/1M Efficiency - Type: Sound Pressure Level (SPL) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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TW-700 | Excelta Corporation |
![]() Packaging: Retail Package Features: Anti-Magnetic Material: Stainless Steel Tip Shape: Assorted Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
TW7000 | IFM ELECTRONIC |
![]() Description: Converter: temperature Type of converter: temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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TW7000 | ifm efector, inc. |
Description: INFRARED TEMPERATURE SENSOR; M30 Packaging: Box Package / Case: Cylinder, Threaded - M30 Mounting Type: Panel Mount Operating Temperature: 0°C ~ 65°C Voltage - Supply: 10V ~ 34V Sensor Type: Digital, Local Sensing Temperature - Local: 50°C ~ 500°C Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
TW7001 | IFM ELECTRONIC |
![]() Description: Converter: temperature Type of converter: temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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TW7001 | ifm efector, inc. |
Description: INFRARED TEMPERATURE SENSOR; M30 Packaging: Box Package / Case: Cylinder, Threaded - M30 Mounting Type: Panel Mount Operating Temperature: 0°C ~ 65°C Voltage - Supply: 10V ~ 34V Sensor Type: Digital, Local Sensing Temperature - Local: 250°C ~ 1250°C Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
TW7011 | IFM ELECTRONIC |
![]() Description: Converter: temperature Type of converter: temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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TW7011 | ifm efector, inc. |
Description: INFRARED TEMPERATURE SENSOR; M30 Packaging: Box Package / Case: Cylinder, Threaded - M30 Mounting Type: Panel Mount Operating Temperature: 0°C ~ 65°C Voltage - Supply: 10V ~ 34V Sensor Type: Digital, Local Sensing Temperature - Local: 350°C ~ 1350°C Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
12TW70-514N | Honeywell Sensing and Productivity Solutions |
![]() Packaging: Bulk Current Rating (Amps): 5A (AC) Mounting Type: Panel Mount Circuit: DPDT Switch Function: On-Off-Mom Operating Temperature: -65°C ~ 71°C Termination Style: Solder Lug Illumination: Non-Illuminated Bushing Thread: 15/32-32 Actuator Length: 20.83mm Actuator Type: Locking Lever Ingress Protection: Environment Sealed Panel Cutout Dimensions: Circular - 12.40mm Dia Part Status: Active Voltage Rating - AC: 125 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
SCTW70N120G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
SCTW70N120G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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STW70N10F4 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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STW70N60DM2 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
STW70N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247 Polarisation: unipolar Kind of package: tube Gate charge: 99nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 390W Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
STW70N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247 Polarisation: unipolar Kind of package: tube Gate charge: 99nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 390W Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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STW70N60DM6 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Supplier Device Package: TO-247-3 Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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STW70N60DM6-4 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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STW70N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W Polarisation: unipolar Kind of package: tube Version: ESD Technology: MDmesh™ || Plus Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Drain-source voltage: 650V Drain current: 43A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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STW70N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W Polarisation: unipolar Kind of package: tube Version: ESD Technology: MDmesh™ || Plus Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Drain-source voltage: 650V Drain current: 43A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
STW70N60M2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A Polarisation: unipolar Kind of package: tube Gate charge: 118nC Technology: MDmesh™ M2 Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 272A Drain-source voltage: 600V Drain current: 43A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
STW70N60M2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A Polarisation: unipolar Kind of package: tube Gate charge: 118nC Technology: MDmesh™ M2 Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 272A Drain-source voltage: 600V Drain current: 43A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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STW70N60M2-4 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
STW70N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A Polarisation: unipolar Kind of package: tube Gate charge: 125nC Technology: MDmesh™ DM6 Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 260A Drain-source voltage: 650V Drain current: 43A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
STW70N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A Polarisation: unipolar Kind of package: tube Gate charge: 125nC Technology: MDmesh™ DM6 Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 260A Drain-source voltage: 650V Drain current: 43A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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STW70N65DM6 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
STW70N65DM6-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4 Polarisation: unipolar Kind of package: tube Gate charge: 125nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 260A Drain-source voltage: 650V Drain current: 43A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
STW70N65DM6-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4 Polarisation: unipolar Kind of package: tube Gate charge: 125nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 260A Drain-source voltage: 650V Drain current: 43A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 450W Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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STW70N65DM6-4 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
STW70N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247 Polarisation: unipolar Kind of package: tube Gate charge: 117nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 252A Drain-source voltage: 650V Drain current: 40A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 446W Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
STW70N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247 Polarisation: unipolar Kind of package: tube Gate charge: 117nC Kind of channel: enhancement Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 252A Drain-source voltage: 650V Drain current: 40A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 446W Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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STW70N65M2 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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T-WORK7000-160-160-2.0 | Shiu Li Technology Co., Ltd. |
![]() Packaging: Tray Color: Gray, Green Material: Silicone Shape: Square Thickness: 0.0790" (2.000mm) Type: Gap Filler Pad, Sheet Usage: Thermally Conductive Outline: 160.00mm x 160.00mm Thermal Conductivity: 11W/m-K Adhesive: Tacky - Both Sides Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SCTW70N120G2V |
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Hersteller: STMicroelectronics
Description: TRANS SJT N-CH 1200V 91A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 547W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
Description: TRANS SJT N-CH 1200V 91A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 547W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 58.80 EUR |
30+ | 39.42 EUR |
120+ | 39.17 EUR |
STW70N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.34 EUR |
7+ | 11.10 EUR |
STW70N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.34 EUR |
7+ | 11.10 EUR |
510+ | 10.67 EUR |
STW70N60DM6-4 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.60 EUR |
6+ | 12.16 EUR |
STW70N60DM6-4 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Polarisation: unipolar
Kind of package: tube
Version: ESD
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.60 EUR |
6+ | 12.16 EUR |
STW70N60M2 |
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Hersteller: ST
Transistor N-Channel MOSFET; 650V; 25V; 40mOhm; 68A; 450W; -55°C ~ 150°C; STW70N60M2 TSTW70N60M2
Anzahl je Verpackung: 2 Stücke
Transistor N-Channel MOSFET; 650V; 25V; 40mOhm; 68A; 450W; -55°C ~ 150°C; STW70N60M2 TSTW70N60M2
Anzahl je Verpackung: 2 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 25.80 EUR |
STW70N60M2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 17.30 EUR |
30+ | 10.25 EUR |
120+ | 8.71 EUR |
510+ | 8.02 EUR |
PGKTW70SDAD1SD |
Кольоровий графічний TFT індикатор 7.0", з ємнісним тач-падом I2C FT5446DQ9, інтерфейс RGB, видима область 153.6 x 86.64 мм, 440 cd/m2
auf Bestellung 1 Stücke:
Lieferzeit 7-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
PGKTW70SNCE1EO |
Кольоровий графічний TFT індикатор 7.0", інтерфейс LVDS Receiver 18 bit 256K кольорів, видима область 152.4 x 91.44 мм, 800 cd/m2
auf Bestellung 1 Stücke:
Lieferzeit 7-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
STW70N10F4 |
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Hersteller: STM
auf Bestellung 92270 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
9002 |
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Hersteller: VISATON
Category: Speakers
Description: Loudspeaker; general purpose; 40W; 8Ω; 64x64x29mm; 800÷20000Hz
Type of sound transducer: loudspeaker
Kind of loudspeaker: general purpose
Power: 40W
Maximum power: 80W
Impedance: 8Ω
Body dimensions: 64x64x29mm
Sound frequency: 0.8...20kHz
Panel cutout diameter: 64mm
Sound level: 90dB
Resonant frequency: 1.5kHz
Colour: black
Diameter: 64mm
Height: 29mm
Category: Speakers
Description: Loudspeaker; general purpose; 40W; 8Ω; 64x64x29mm; 800÷20000Hz
Type of sound transducer: loudspeaker
Kind of loudspeaker: general purpose
Power: 40W
Maximum power: 80W
Impedance: 8Ω
Body dimensions: 64x64x29mm
Sound frequency: 0.8...20kHz
Panel cutout diameter: 64mm
Sound level: 90dB
Resonant frequency: 1.5kHz
Colour: black
Diameter: 64mm
Height: 29mm
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 19.05 EUR |
5+ | 15.72 EUR |
10+ | 15.63 EUR |
T-WORK7000-160-160-0.5 |
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Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0200" (0.508mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0200" (0.508mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 124.10 EUR |
10+ | 117.20 EUR |
T-WORK7000-160-160-1.0 |
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Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0390" (0.991mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0390" (0.991mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 152.06 EUR |
10+ | 145.36 EUR |
T-WORK7000-160-160-1.5 |
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Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0591" (1.500mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0591" (1.500mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 188.80 EUR |
10+ | 182.81 EUR |
T-WORK7000-160-160-2.5 |
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Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0980" (2.489mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0980" (2.489mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 337.18 EUR |
12+ | 295.43 EUR |
27+ | 282.92 EUR |
T-WORK7000-160-160-3.0 |
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Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.118" (3.00mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.118" (3.00mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 313.14 EUR |
10+ | 312.54 EUR |
VS-TW-70 Produktcode: 115256
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Produkt ist nicht verfügbar
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TW 70 - 8 OHM |
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Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM 40W TOP PORT 90DB
Packaging: Bulk
Shape: Round, Square Frame
Type: Tweeter
Technology: Magnetic
Termination: Quick Connect
Frequency - Self Resonant: 1.5kHz
Port Location: Top
Height - Seated (Max): 1.169" (29.70mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 60 W
Power - Rated: 40 W
Frequency Range: 800 Hz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
Description: SPEAKER 8OHM 40W TOP PORT 90DB
Packaging: Bulk
Shape: Round, Square Frame
Type: Tweeter
Technology: Magnetic
Termination: Quick Connect
Frequency - Self Resonant: 1.5kHz
Port Location: Top
Height - Seated (Max): 1.169" (29.70mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 60 W
Power - Rated: 40 W
Frequency Range: 800 Hz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW-700 |
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Hersteller: Excelta Corporation
Description: TWEEZER KITSET -- ANTI-MAG. SS -
Packaging: Retail Package
Features: Anti-Magnetic
Material: Stainless Steel
Tip Shape: Assorted
Part Status: Active
Description: TWEEZER KITSET -- ANTI-MAG. SS -
Packaging: Retail Package
Features: Anti-Magnetic
Material: Stainless Steel
Tip Shape: Assorted
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW7000 |
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Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW7000 |
Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 50°C ~ 500°C
Part Status: Active
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 50°C ~ 500°C
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW7001 |
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Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW7001 |
Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 250°C ~ 1250°C
Part Status: Active
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 250°C ~ 1250°C
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW7011 |
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Hersteller: IFM ELECTRONIC
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Category: Temp. Sensors - Resistance Thermometers
Description: Converter: temperature
Type of converter: temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TW7011 |
Hersteller: ifm efector, inc.
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 350°C ~ 1350°C
Part Status: Active
Description: INFRARED TEMPERATURE SENSOR; M30
Packaging: Box
Package / Case: Cylinder, Threaded - M30
Mounting Type: Panel Mount
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 10V ~ 34V
Sensor Type: Digital, Local
Sensing Temperature - Local: 350°C ~ 1350°C
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
12TW70-514N |
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Hersteller: Honeywell Sensing and Productivity Solutions
Description: SWITCH TOGGLE DPDT 5A 125V
Packaging: Bulk
Current Rating (Amps): 5A (AC)
Mounting Type: Panel Mount
Circuit: DPDT
Switch Function: On-Off-Mom
Operating Temperature: -65°C ~ 71°C
Termination Style: Solder Lug
Illumination: Non-Illuminated
Bushing Thread: 15/32-32
Actuator Length: 20.83mm
Actuator Type: Locking Lever
Ingress Protection: Environment Sealed
Panel Cutout Dimensions: Circular - 12.40mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Description: SWITCH TOGGLE DPDT 5A 125V
Packaging: Bulk
Current Rating (Amps): 5A (AC)
Mounting Type: Panel Mount
Circuit: DPDT
Switch Function: On-Off-Mom
Operating Temperature: -65°C ~ 71°C
Termination Style: Solder Lug
Illumination: Non-Illuminated
Bushing Thread: 15/32-32
Actuator Length: 20.83mm
Actuator Type: Locking Lever
Ingress Protection: Environment Sealed
Panel Cutout Dimensions: Circular - 12.40mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
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SCTW70N120G2V |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
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SCTW70N120G2V |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N10F4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
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STW70N60DM2 |
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Hersteller: STMicroelectronics
Description: N-channel 600 V, 37 mOhm typ., 6
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Description: N-channel 600 V, 37 mOhm typ., 6
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
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STW70N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
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STW70N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N60DM6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STW70N60DM6-4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
Description: MOSFET N-CH 600V 62A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
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STW70N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
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STW70N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Technology: MDmesh™ || Plus
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N60M2-4 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
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STW70N60M2-4 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Polarisation: unipolar
Kind of package: tube
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STW70N60M2-4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
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STW70N65DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Produkt ist nicht verfügbar
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STW70N65DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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STW70N65DM6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Description: MOSFET N-CH 650V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Produkt ist nicht verfügbar
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STW70N65DM6-4 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Produkt ist nicht verfügbar
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STW70N65DM6-4 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Polarisation: unipolar
Kind of package: tube
Gate charge: 125nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
STW70N65DM6-4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 68A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 68A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STW70N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
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STW70N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 117nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
STW70N65M2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
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T-WORK7000-160-160-2.0 |
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Hersteller: Shiu Li Technology Co., Ltd.
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0790" (2.000mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Description: THERM PAD 160MMX160MM GRY/GRN
Packaging: Tray
Color: Gray, Green
Material: Silicone
Shape: Square
Thickness: 0.0790" (2.000mm)
Type: Gap Filler Pad, Sheet
Usage: Thermally Conductive
Outline: 160.00mm x 160.00mm
Thermal Conductivity: 11W/m-K
Adhesive: Tacky - Both Sides
Part Status: Active
Produkt ist nicht verfügbar
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Stück im Wert von UAH