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STD16NF06T4 STD16NF06T4 STMicroelectronics en.CD00083971.pdf Description: MOSFET N-CH 60V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.07 EUR
5000+ 1.02 EUR
12500+ 0.97 EUR
Mindestbestellmenge: 2500
STD20NF06LT4 STD20NF06LT4 STMicroelectronics en.CD00003407.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.45 EUR
5000+ 1.38 EUR
Mindestbestellmenge: 2500
STD20NF06T4 STD20NF06T4 STMicroelectronics STD20NF06.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.24 EUR
5000+ 1.18 EUR
Mindestbestellmenge: 2500
STD25NF10T4 STD25NF10T4 STMicroelectronics std25nf10t4.pdf Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.92 EUR
Mindestbestellmenge: 2500
STD2NM60T4 STD2NM60T4 STMicroelectronics en.CD00002920.pdf Description: MOSFET N-CH 600V 2A DPAK
Produkt ist nicht verfügbar
STD30NE06L STD30NE06L STMicroelectronics en.CD00001515.pdf Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Produkt ist nicht verfügbar
STD30NE06LT4 STD30NE06LT4 STMicroelectronics en.CD00001515.pdf Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Produkt ist nicht verfügbar
STD30NF06T4 STD30NF06T4 STMicroelectronics en.CD00002891.pdf Description: MOSFET N-CH 60V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Produkt ist nicht verfügbar
STD35NF06LT4 STD35NF06LT4 STMicroelectronics en.CD00002363.pdf Description: MOSFET N-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.52 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 2500
STD3NK80ZT4 STD3NK80ZT4 STMicroelectronics en.CD00003377.pdf Description: MOSFET N-CH 800V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.72 EUR
5000+ 1.66 EUR
Mindestbestellmenge: 2500
STD3NK90ZT4 STD3NK90ZT4 STMicroelectronics en.CD00003170.pdf description Description: MOSFET N-CH 900V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Produkt ist nicht verfügbar
STD3NM50T4 STD3NM50T4 STMicroelectronics en.CD00002717.pdf Description: MOSFET N-CH 550V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
STD40NF03LT4 STD40NF03LT4 STMicroelectronics en.CD00001933.pdf Description: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
STD40NF3LLT4 STD40NF3LLT4 STMicroelectronics en.CD00002091.pdf Description: MOSFET N-CH 30V 40A DPAK
Produkt ist nicht verfügbar
STD4NK80ZT4 STD4NK80ZT4 STMicroelectronics ST%28D%2CP%294NK80Z%28-1%2CFP%29.pdf Description: MOSFET N-CH 800V 3A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.95 EUR
Mindestbestellmenge: 2500
STD4NS25T4 STD4NS25T4 STMicroelectronics en.CD00002232.pdf Description: MOSFET N-CH 250V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Produkt ist nicht verfügbar
STD5N20T4 STD5N20T4 STMicroelectronics en.CD00000731.pdf Description: MOSFET N-CH 200V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
STD5NK60ZT4 STD5NK60ZT4 STMicroelectronics en.CD00003042.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar
STD60NF55LT4 STD60NF55LT4 STMicroelectronics en.CD00002260.pdf Description: MOSFET N-CH 55V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.79 EUR
Mindestbestellmenge: 2500
STD60NH03LT4 STD60NH03LT4 STMicroelectronics en.CD00003434.pdf Description: MOSFET N-CH 30V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
STD6NF10T4 STD6NF10T4 STMicroelectronics en.CD00002457.pdf Description: MOSFET N-CH 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.1 EUR
Mindestbestellmenge: 2500
STD6NK50ZT4 STD6NK50ZT4 STMicroelectronics en.CD00003577.pdf Description: MOSFET N-CH 500V 5.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.05 EUR
Mindestbestellmenge: 2500
STD70N02L STD70N02L STMicroelectronics en.CD00067209.pdf Description: MOSFET N-CH 25V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
Produkt ist nicht verfügbar
STD724T4 STD724T4 STMicroelectronics en.CD00045765.pdf Description: TRANS NPN 30V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Produkt ist nicht verfügbar
STD7NK40ZT4 STD7NK40ZT4 STMicroelectronics en.CD00003040.pdf Description: MOSFET N-CH 400V 5.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.65 EUR
5000+ 1.57 EUR
Mindestbestellmenge: 2500
STD90N02L STD90N02L STMicroelectronics en.CD00067383.pdf Description: MOSFET N-CH 25V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 16 V
Produkt ist nicht verfügbar
STD90NH02LT4 STD90NH02LT4 STMicroelectronics en.CD00003070.pdf Description: MOSFET N-CH 24V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
Produkt ist nicht verfügbar
STDD15-05WFILM STDD15-05WFILM STMicroelectronics STDD15_Aug2002.pdf Description: RF DIODE STANDARD 15V SOT323
Produkt ist nicht verfügbar
STE45NK80ZD STE45NK80ZD STMicroelectronics en.CD00003692.pdf Description: MOSFET N-CH 800V 45A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: ISOTOP®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
STF12PF06 STF12PF06 STMicroelectronics STF12PF06,STP12PF06pdf.pdf Description: MOSFET P-CH 60V 8A TO-220FP
Produkt ist nicht verfügbar
STF724 STF724 STMicroelectronics STF,STN724.pdf Description: TRANS NPN 30V 3A SOT-89
Produkt ist nicht verfügbar
STF8NK85Z STF8NK85Z STMicroelectronics Description: MOSFET N-CH 850V 6.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Produkt ist nicht verfügbar
STG3684AQTR STMicroelectronics en.CD00060319.pdf Description: IC SWITCH SPDT X 2 500MOHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 55MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 49pC
Crosstalk: -72dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
STGB10NB60ST4 STGB10NB60ST4 STMicroelectronics en.CD00046342.pdf Description: IGBT 600V 29A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 80 W
Produkt ist nicht verfügbar
STGB20NB37LZT4 STGB20NB37LZT4 STMicroelectronics en.CD00002019.pdf Description: IGBT 425V 40A 200W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 2.3µs/2µs
Switching Energy: 11.8mJ (off)
Test Condition: 250V, 20A, 1kOhm, 4.5V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
STGB3NB60KDT4 STGB3NB60KDT4 STMicroelectronics STGx3NB60K(KD,KDFP).pdf Description: IGBT 600V 10A 50W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 30µJ (on), 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGB3NB60SDT4 STGB3NB60SDT4 STMicroelectronics en.CD00002058.pdf Description: IGBT 600V 6A 70W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 125ns/3.4µs
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 70 W
Produkt ist nicht verfügbar
STGB7NB60KDT4 STGB7NB60KDT4 STMicroelectronics STGB,STGP%207NB60KD.pdf Description: IGBT 600V 14A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 15ns/50ns
Switching Energy: 140µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 32.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
STGD3NB60HDT4 STGD3NB60HDT4 STMicroelectronics STGD3NB60HD.pdf Description: IGBT 600V 10A 50W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 5ns/53ns
Switching Energy: 33µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGD7NB60ST4 STGD7NB60ST4 STMicroelectronics stgd7nb60s.html Description: IGBT 600V 15A 55W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/-
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 7A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 55 W
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.34 EUR
5000+ 2.25 EUR
Mindestbestellmenge: 2500
STGE200NB60S STGE200NB60S STMicroelectronics en.CD00003154.pdf Description: IGBT MOD 600V 200A 600W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V
auf Bestellung 99 Stücke:
Lieferzeit 21-28 Tag (e)
1+79.3 EUR
10+ 70.47 EUR
STGF10NB60SD STGF10NB60SD STMicroelectronics en.CD00077672.pdf Description: IGBT 600V 23A 25W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 25 W
auf Bestellung 495 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.69 EUR
10+ 5.11 EUR
100+ 4.11 EUR
Mindestbestellmenge: 5
STGP10NB37LZ STGP10NB37LZ STMicroelectronics en.CD00002226.pdf Description: IGBT 440V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP10NB60S STGP10NB60S STMicroelectronics en.CD00046342.pdf Description: IGBT 600V 29A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 80 W
auf Bestellung 1902 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.49 EUR
50+ 4.41 EUR
100+ 3.63 EUR
500+ 3.07 EUR
1000+ 2.61 EUR
Mindestbestellmenge: 5
STGP12NB60HD STGP12NB60HD STMicroelectronics STGP12NB60HD.pdf Description: IGBT 600V 30A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 5ns/91ns
Switching Energy: 210µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP12NB60K STGP12NB60K STMicroelectronics STGP12NB60K.pdf Description: IGBT 600V 30A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/96ns
Switching Energy: 258µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP12NB60KD STGP12NB60KD STMicroelectronics STGB,STGP%2012NB60KD.pdf Description: IGBT 600V 30A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/96ns
Switching Energy: 258µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP3NB60HD STGP3NB60HD STMicroelectronics STGP3NB60HD(FP).pdf Description: IGBT 600V 10A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 5ns/53ns
Switching Energy: 33µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGP3NB60K STGP3NB60K STMicroelectronics STG(D,P)3NB60K.pdf Description: IGBT 600V 10A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGP3NB60KD STGP3NB60KD STMicroelectronics STGx3NB60K(KD,KDFP).pdf Description: IGBT 600V 10A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 30µJ (on), 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGP7NB60HD STGP7NB60HD STMicroelectronics STGP7NB60HD(FP).pdf Description: IGBT 600V 14A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 85µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 42 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
STGP7NC60HD STGP7NC60HD STMicroelectronics en.CD00003695.pdf description Description: IGBT 600V 25A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
auf Bestellung 38170 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
50+ 3.12 EUR
100+ 2.56 EUR
500+ 2.17 EUR
1000+ 1.84 EUR
2000+ 1.75 EUR
5000+ 1.68 EUR
10000+ 1.63 EUR
Mindestbestellmenge: 7
STGW30NC60WD STGW30NC60WD STMicroelectronics stgw30nc60wd.pdf Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29.5ns/118ns
Switching Energy: 305µJ (on), 181µJ (off)
Test Condition: 390V, 20A, 10Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
auf Bestellung 523 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.75 EUR
30+ 9.32 EUR
120+ 7.99 EUR
510+ 7.1 EUR
Mindestbestellmenge: 3
STGW35NB60SD STGW35NB60SD STMicroelectronics en.CD00074372.pdf Description: IGBT 600V 70A 200W TO247
Produkt ist nicht verfügbar
STGY40NC60VD STGY40NC60VD STMicroelectronics en.CD00003462.pdf Description: IGBT 600V 80A 260W MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: MAX247™
Td (on/off) @ 25°C: 43ns/140ns
Switching Energy: 330µJ (on), 720µJ (off)
Test Condition: 390V, 40A, 3.3Ohm, 15V
Gate Charge: 214 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Produkt ist nicht verfügbar
STIL06-T5/R STIL06-T5/R STMicroelectronics STIL.pdf Description: THYRISTOR PENTAWATT5 T5
Produkt ist nicht verfügbar
STLVDS31BTR STLVDS31BTR STMicroelectronics en.CD00002702.pdf Description: IC DRIVER 4/0 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
STM1001RWX6F STM1001RWX6F STMicroelectronics en.CD00017849.pdf description Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.63V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.26 EUR
6000+ 1.2 EUR
Mindestbestellmenge: 3000
STM1001SWX6F STM1001SWX6F STMicroelectronics en.CD00017849.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.34 EUR
6000+ 1.27 EUR
Mindestbestellmenge: 3000
STM1001TWX6F STM1001TWX6F STMicroelectronics en.CD00017849.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.56 EUR
6000+ 0.52 EUR
Mindestbestellmenge: 3000
STD16NF06T4 en.CD00083971.pdf
STD16NF06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.07 EUR
5000+ 1.02 EUR
12500+ 0.97 EUR
Mindestbestellmenge: 2500
STD20NF06LT4 en.CD00003407.pdf
STD20NF06LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.45 EUR
5000+ 1.38 EUR
Mindestbestellmenge: 2500
STD20NF06T4 STD20NF06.pdf
STD20NF06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.24 EUR
5000+ 1.18 EUR
Mindestbestellmenge: 2500
STD25NF10T4 std25nf10t4.pdf
STD25NF10T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.92 EUR
Mindestbestellmenge: 2500
STD2NM60T4 en.CD00002920.pdf
STD2NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2A DPAK
Produkt ist nicht verfügbar
STD30NE06L en.CD00001515.pdf
STD30NE06L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Produkt ist nicht verfügbar
STD30NE06LT4 en.CD00001515.pdf
STD30NE06LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
Produkt ist nicht verfügbar
STD30NF06T4 en.CD00002891.pdf
STD30NF06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Produkt ist nicht verfügbar
STD35NF06LT4 en.CD00002363.pdf
STD35NF06LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.52 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 2500
STD3NK80ZT4 en.CD00003377.pdf
STD3NK80ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.72 EUR
5000+ 1.66 EUR
Mindestbestellmenge: 2500
STD3NK90ZT4 description en.CD00003170.pdf
STD3NK90ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Produkt ist nicht verfügbar
STD3NM50T4 en.CD00002717.pdf
STD3NM50T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
STD40NF03LT4 en.CD00001933.pdf
STD40NF03LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
STD40NF3LLT4 en.CD00002091.pdf
STD40NF3LLT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
Produkt ist nicht verfügbar
STD4NK80ZT4 ST%28D%2CP%294NK80Z%28-1%2CFP%29.pdf
STD4NK80ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 3A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.95 EUR
Mindestbestellmenge: 2500
STD4NS25T4 en.CD00002232.pdf
STD4NS25T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Produkt ist nicht verfügbar
STD5N20T4 en.CD00000731.pdf
STD5N20T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
STD5NK60ZT4 en.CD00003042.pdf
STD5NK60ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar
STD60NF55LT4 en.CD00002260.pdf
STD60NF55LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.79 EUR
Mindestbestellmenge: 2500
STD60NH03LT4 en.CD00003434.pdf
STD60NH03LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
STD6NF10T4 en.CD00002457.pdf
STD6NF10T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.1 EUR
Mindestbestellmenge: 2500
STD6NK50ZT4 en.CD00003577.pdf
STD6NK50ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.05 EUR
Mindestbestellmenge: 2500
STD70N02L en.CD00067209.pdf
STD70N02L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 25V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
Produkt ist nicht verfügbar
STD724T4 en.CD00045765.pdf
STD724T4
Hersteller: STMicroelectronics
Description: TRANS NPN 30V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Produkt ist nicht verfügbar
STD7NK40ZT4 en.CD00003040.pdf
STD7NK40ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.65 EUR
5000+ 1.57 EUR
Mindestbestellmenge: 2500
STD90N02L en.CD00067383.pdf
STD90N02L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 25V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 16 V
Produkt ist nicht verfügbar
STD90NH02LT4 en.CD00003070.pdf
STD90NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
Produkt ist nicht verfügbar
STDD15-05WFILM STDD15_Aug2002.pdf
STDD15-05WFILM
Hersteller: STMicroelectronics
Description: RF DIODE STANDARD 15V SOT323
Produkt ist nicht verfügbar
STE45NK80ZD en.CD00003692.pdf
STE45NK80ZD
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 45A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: ISOTOP®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
STF12PF06 STF12PF06,STP12PF06pdf.pdf
STF12PF06
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 8A TO-220FP
Produkt ist nicht verfügbar
STF724 STF,STN724.pdf
STF724
Hersteller: STMicroelectronics
Description: TRANS NPN 30V 3A SOT-89
Produkt ist nicht verfügbar
STF8NK85Z
STF8NK85Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 850V 6.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Produkt ist nicht verfügbar
STG3684AQTR en.CD00060319.pdf
Hersteller: STMicroelectronics
Description: IC SWITCH SPDT X 2 500MOHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 55MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 49pC
Crosstalk: -72dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
STGB10NB60ST4 en.CD00046342.pdf
STGB10NB60ST4
Hersteller: STMicroelectronics
Description: IGBT 600V 29A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 80 W
Produkt ist nicht verfügbar
STGB20NB37LZT4 en.CD00002019.pdf
STGB20NB37LZT4
Hersteller: STMicroelectronics
Description: IGBT 425V 40A 200W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 2.3µs/2µs
Switching Energy: 11.8mJ (off)
Test Condition: 250V, 20A, 1kOhm, 4.5V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
STGB3NB60KDT4 STGx3NB60K(KD,KDFP).pdf
STGB3NB60KDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 10A 50W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 30µJ (on), 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGB3NB60SDT4 en.CD00002058.pdf
STGB3NB60SDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 6A 70W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 125ns/3.4µs
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 70 W
Produkt ist nicht verfügbar
STGB7NB60KDT4 STGB,STGP%207NB60KD.pdf
STGB7NB60KDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 14A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 15ns/50ns
Switching Energy: 140µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 32.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
STGD3NB60HDT4 STGD3NB60HD.pdf
STGD3NB60HDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 10A 50W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 5ns/53ns
Switching Energy: 33µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGD7NB60ST4 stgd7nb60s.html
STGD7NB60ST4
Hersteller: STMicroelectronics
Description: IGBT 600V 15A 55W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 700ns/-
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 7A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 55 W
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.34 EUR
5000+ 2.25 EUR
Mindestbestellmenge: 2500
STGE200NB60S en.CD00003154.pdf
STGE200NB60S
Hersteller: STMicroelectronics
Description: IGBT MOD 600V 200A 600W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V
auf Bestellung 99 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+79.3 EUR
10+ 70.47 EUR
STGF10NB60SD en.CD00077672.pdf
STGF10NB60SD
Hersteller: STMicroelectronics
Description: IGBT 600V 23A 25W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 25 W
auf Bestellung 495 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.69 EUR
10+ 5.11 EUR
100+ 4.11 EUR
Mindestbestellmenge: 5
STGP10NB37LZ en.CD00002226.pdf
STGP10NB37LZ
Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP10NB60S en.CD00046342.pdf
STGP10NB60S
Hersteller: STMicroelectronics
Description: IGBT 600V 29A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 700ns/1.2µs
Switching Energy: 600µJ (on), 5mJ (off)
Test Condition: 480V, 10A, 1kOhm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 80 W
auf Bestellung 1902 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.49 EUR
50+ 4.41 EUR
100+ 3.63 EUR
500+ 3.07 EUR
1000+ 2.61 EUR
Mindestbestellmenge: 5
STGP12NB60HD STGP12NB60HD.pdf
STGP12NB60HD
Hersteller: STMicroelectronics
Description: IGBT 600V 30A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 5ns/91ns
Switching Energy: 210µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP12NB60K STGP12NB60K.pdf
STGP12NB60K
Hersteller: STMicroelectronics
Description: IGBT 600V 30A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/96ns
Switching Energy: 258µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP12NB60KD STGB,STGP%2012NB60KD.pdf
STGP12NB60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 30A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 25ns/96ns
Switching Energy: 258µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
STGP3NB60HD STGP3NB60HD(FP).pdf
STGP3NB60HD
Hersteller: STMicroelectronics
Description: IGBT 600V 10A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 5ns/53ns
Switching Energy: 33µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGP3NB60K STG(D,P)3NB60K.pdf
STGP3NB60K
Hersteller: STMicroelectronics
Description: IGBT 600V 10A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGP3NB60KD STGx3NB60K(KD,KDFP).pdf
STGP3NB60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 10A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 14ns/33ns
Switching Energy: 30µJ (on), 58µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 50 W
Produkt ist nicht verfügbar
STGP7NB60HD STGP7NB60HD(FP).pdf
STGP7NB60HD
Hersteller: STMicroelectronics
Description: IGBT 600V 14A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 85µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 42 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
STGP7NC60HD description en.CD00003695.pdf
STGP7NC60HD
Hersteller: STMicroelectronics
Description: IGBT 600V 25A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
auf Bestellung 38170 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
50+ 3.12 EUR
100+ 2.56 EUR
500+ 2.17 EUR
1000+ 1.84 EUR
2000+ 1.75 EUR
5000+ 1.68 EUR
10000+ 1.63 EUR
Mindestbestellmenge: 7
STGW30NC60WD stgw30nc60wd.pdf
STGW30NC60WD
Hersteller: STMicroelectronics
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29.5ns/118ns
Switching Energy: 305µJ (on), 181µJ (off)
Test Condition: 390V, 20A, 10Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
auf Bestellung 523 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.75 EUR
30+ 9.32 EUR
120+ 7.99 EUR
510+ 7.1 EUR
Mindestbestellmenge: 3
STGW35NB60SD en.CD00074372.pdf
STGW35NB60SD
Hersteller: STMicroelectronics
Description: IGBT 600V 70A 200W TO247
Produkt ist nicht verfügbar
STGY40NC60VD en.CD00003462.pdf
STGY40NC60VD
Hersteller: STMicroelectronics
Description: IGBT 600V 80A 260W MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: MAX247™
Td (on/off) @ 25°C: 43ns/140ns
Switching Energy: 330µJ (on), 720µJ (off)
Test Condition: 390V, 40A, 3.3Ohm, 15V
Gate Charge: 214 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Produkt ist nicht verfügbar
STIL06-T5/R STIL.pdf
STIL06-T5/R
Hersteller: STMicroelectronics
Description: THYRISTOR PENTAWATT5 T5
Produkt ist nicht verfügbar
STLVDS31BTR en.CD00002702.pdf
STLVDS31BTR
Hersteller: STMicroelectronics
Description: IC DRIVER 4/0 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
STM1001RWX6F description en.CD00017849.pdf
STM1001RWX6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.63V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.26 EUR
6000+ 1.2 EUR
Mindestbestellmenge: 3000
STM1001SWX6F en.CD00017849.pdf
STM1001SWX6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.34 EUR
6000+ 1.27 EUR
Mindestbestellmenge: 3000
STM1001TWX6F en.CD00017849.pdf
STM1001TWX6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-23-3
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.52 EUR
Mindestbestellmenge: 3000
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