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STM817MM6E STM817MM6E STMicroelectronics en.CD00023144.pdf Description: IC SUPERVISOR 1 CHANNEL 8SO
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 4.4V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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STM818LDS6E STM818LDS6E STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8TSSOP
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STM818LDS6F STM818LDS6F STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8TSSOP
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STM818LM6E STM818LM6E STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8-SOIC
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STM818MDS6E STM818MDS6E STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8TSSOP
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STM818MDS6F STM818MDS6F STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8TSSOP
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STM818MM6E STM818MM6E STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8-SOIC
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STM819LDS6E STM819LDS6E STMicroelectronics en.CD00023144.pdf Description: IC SUPERVISOR 1 CHANNEL 8TSSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TSSOP
Voltage - Threshold: 4.65V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
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STM819LDS6F STM819LDS6F STMicroelectronics en.CD00023144.pdf Description: IC SUPERVISOR 1 CHANNEL 8TSSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TSSOP
Voltage - Threshold: 4.65V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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STM819LM6E STM819LM6E STMicroelectronics en.CD00023144.pdf Description: IC SUPERVISOR 1 CHANNEL 8SO
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 4.65V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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STM819MDS6E STM819MDS6E STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8TSSOP
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STM819MDS6F STM819MDS6F STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8TSSOP
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STM819MM6E STM819MM6E STMicroelectronics CD00023144.pdf Description: IC SUPERVISOR SWITCH OVER 8-SOIC
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STN1NF10 STN1NF10 STMicroelectronics STN1NF10.pdf Description: MOSFET N-CH 100V 1A SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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STN2NE10 STN2NE10 STMicroelectronics en.CD00001702.pdf Description: MOSFET N-CH 100V 2A SOT-223
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STN2NE10L STN2NE10L STMicroelectronics en.CD00001624.pdf Description: MOSFET N-CH 100V 1.8A SOT-223
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STN2NF10 STN2NF10 STMicroelectronics en.CD00002442.pdf Description: MOSFET N-CH 100V 2.4A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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8000+0.62 EUR
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STN724 STN724 STMicroelectronics STF%2CSTN724.pdf Description: TRANS NPN 30V 3A SOT-223
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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STP08C596M STP08C596M STMicroelectronics STP08C596.pdf Description: IC LED DRIVER LINEAR 120MA 16SO
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 4.5V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 120mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
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STP08CDC596M STP08CDC596M STMicroelectronics STP08CDC596.pdf Description: IC LED DRIVER LINEAR 120MA 16SO
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 120mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply (Min): 3.3V
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STP08CL596M STP08CL596M STMicroelectronics STP08CL.pdf Description: IC LED DRIVER LINEAR 90MA 16SO
Part Status: Obsolete
Voltage - Supply (Max): 3.6V
Voltage - Supply (Min): 3V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 90mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 8
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Voltage - Output: 16V
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STP100NF04 STP100NF04 STMicroelectronics stp100nf04.pdf Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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STP10NK60ZFP STP10NK60ZFP STMicroelectronics en.CD00002815.pdf description Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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STP10NK70Z STP10NK70Z STMicroelectronics en.CD00003116.pdf Description: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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STP10NK80Z STP10NK80Z STMicroelectronics en.CD00003020.pdf Description: MOSFET N-CH 800V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
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STP11NK40Z STP11NK40Z STMicroelectronics en.CD00003028.pdf description Description: MOSFET N-CH 400V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 785 Stücke:
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STP11NK50Z STP11NK50Z STMicroelectronics en.CD00003024.pdf Description: MOSFET N-CH 500V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 241 Stücke:
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STP11NM60FDFP STP11NM60FDFP STMicroelectronics en.CD00002479.pdf Description: MOSFET N-CH 600V 11A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STP120NF04 STP120NF04 STMicroelectronics en.CD00050267.pdf Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP12NK30Z STP12NK30Z STMicroelectronics en.CD00003186.pdf Description: MOSFET N-CH 300V 9A TO220AB
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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500+1.81 EUR
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STP12NK80Z STP12NK80Z STMicroelectronics en.CD00003379.pdf Description: MOSFET N-CH 800V 10.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2573 Stücke:
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100+2.9 EUR
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STP12NM50FD STP12NM50FD STMicroelectronics en.CD00002913.pdf Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STP140NF75 STP140NF75 STMicroelectronics en.CD00003199.pdf Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 70A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 462 Stücke:
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STP14NF10 STP14NF10 STMicroelectronics en.CD00002419.pdf Description: MOSFET N-CH 100V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP14NK60Z STP14NK60Z STMicroelectronics en.CD00003050.pdf Description: MOSFET N-CH 600V 13.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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STP15NK50ZFP STP15NK50ZFP STMicroelectronics en.CD00003043.pdf description Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
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STP16CP596B1R STP16CP596B1R STMicroelectronics en.CD00052412.pdf Description: IC LED DRIVER LINEAR 50MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 16V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STP16CP596MTR STP16CP596MTR STMicroelectronics en.CD00052412.pdf Description: IC LED DRIVER LINEAR 50MA 24SO
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STP16CP596TTR STP16CP596TTR STMicroelectronics en.CD00052412.pdf Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Min): 3V
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply (Max): 5.5V
Type: Linear
Supplier Device Package: 24-TSSOP
Topology: Shift Register
Frequency: 25MHz
Internal Switch(s): Yes
Number of Outputs: 16
Mounting Type: Surface Mount
Current - Output / Channel: 50mA
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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STP16CP596XTTR STP16CP596XTTR STMicroelectronics en.CD00052412.pdf Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-TSSOP-EP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STP16NF06FP STP16NF06FP STMicroelectronics en.CD00002501.pdf description Description: MOSFET N-CH 60V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Produkt ist nicht verfügbar
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STP16NS25FP STP16NS25FP STMicroelectronics en.CD00002244.pdf Description: MOSFET N-CH 250V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Produkt ist nicht verfügbar
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STP17NK40Z STP17NK40Z STMicroelectronics en.CD00003118.pdf Description: MOSFET N-CH 400V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP200NF03 STP200NF03 STMicroelectronics en.CD00003018.pdf Description: MOSFET N-CH 30V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
auf Bestellung 952 Stücke:
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STP20NM50FD STP20NM50FD STMicroelectronics stb20nm50fd.pdf Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
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STP20NM50FP STP20NM50FP STMicroelectronics en.CD00002374.pdf Description: MOSFET N-CH 550V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
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STP20NM60FD STP20NM60FD STMicroelectronics en.CD00003368.pdf Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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STP22NF03L STP22NF03L STMicroelectronics en.CD00002147.pdf Description: MOSFET N-CH 30V 22A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP22NS25Z STP22NS25Z STMicroelectronics en.CD00002794.pdf Description: MOSFET N-CH 250V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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STP30NF10 STP30NF10 STMicroelectronics en.CD00002440.pdf Description: MOSFET N-CH 100V 35A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP36NF06L STP36NF06L STMicroelectronics en.CD00003405.pdf description Description: MOSFET N-CH 60V 30A TO220AB
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
auf Bestellung 1260 Stücke:
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STP3HNK90Z STP3HNK90Z STMicroelectronics ST%28F%2CP%293HNK90Z.pdf Description: MOSFET N-CH 800V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP3NK60Z STP3NK60Z STMicroelectronics en.CD00003099.pdf Description: MOSFET N-CH 600V 2.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
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STP3NK90Z STP3NK90Z STMicroelectronics en.CD00003170.pdf Description: MOSFET N-CH 900V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
auf Bestellung 904 Stücke:
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STP40NF10L STP40NF10L STMicroelectronics en.CD00003023.pdf Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±17V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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STP45NF3LL STP45NF3LL STMicroelectronics en.CD00002562.pdf Description: MOSFET N-CH 30V 45A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
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STP55NF06L STP55NF06L STMicroelectronics en.CD00002690.pdf Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1899 Stücke:
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STP5NK80Z STP5NK80Z STMicroelectronics en.CD00003038.pdf Description: MOSFET N-CH 800V 4.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 442 Stücke:
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STP60NE06L-16 STP60NE06L-16 STMicroelectronics en.CD00002045.pdf Description: MOSFET N-CH 60V 60A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP60NF03L STP60NF03L STMicroelectronics en.CD00001901.pdf Description: MOSFET N-CH 30V 60A TO220AB
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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STM817MM6E en.CD00023144.pdf
STM817MM6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8SO
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 4.4V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STM818LDS6E CD00023144.pdf
STM818LDS6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8TSSOP
Produkt ist nicht verfügbar
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STM818LDS6F CD00023144.pdf
STM818LDS6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8TSSOP
Produkt ist nicht verfügbar
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STM818LM6E CD00023144.pdf
STM818LM6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8-SOIC
Produkt ist nicht verfügbar
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STM818MDS6E CD00023144.pdf
STM818MDS6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8TSSOP
Produkt ist nicht verfügbar
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STM818MDS6F CD00023144.pdf
STM818MDS6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8TSSOP
Produkt ist nicht verfügbar
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STM818MM6E CD00023144.pdf
STM818MM6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8-SOIC
Produkt ist nicht verfügbar
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STM819LDS6E en.CD00023144.pdf
STM819LDS6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8TSSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TSSOP
Voltage - Threshold: 4.65V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STM819LDS6F en.CD00023144.pdf
STM819LDS6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8TSSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TSSOP
Voltage - Threshold: 4.65V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STM819LM6E en.CD00023144.pdf
STM819LM6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8SO
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 4.65V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STM819MDS6E CD00023144.pdf
STM819MDS6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8TSSOP
Produkt ist nicht verfügbar
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STM819MDS6F CD00023144.pdf
STM819MDS6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8TSSOP
Produkt ist nicht verfügbar
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STM819MM6E CD00023144.pdf
STM819MM6E
Hersteller: STMicroelectronics
Description: IC SUPERVISOR SWITCH OVER 8-SOIC
Produkt ist nicht verfügbar
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STN1NF10 STN1NF10.pdf
STN1NF10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 1A SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STN2NE10 en.CD00001702.pdf
STN2NE10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 2A SOT-223
Produkt ist nicht verfügbar
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STN2NE10L en.CD00001624.pdf
STN2NE10L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 1.8A SOT-223
Produkt ist nicht verfügbar
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STN2NF10 en.CD00002442.pdf
STN2NF10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 2.4A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.67 EUR
8000+0.62 EUR
Mindestbestellmenge: 4000
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STN724 STF%2CSTN724.pdf
STN724
Hersteller: STMicroelectronics
Description: TRANS NPN 30V 3A SOT-223
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STP08C596M STP08C596.pdf
STP08C596M
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 120MA 16SO
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 4.5V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 120mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Produkt ist nicht verfügbar
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STP08CDC596M STP08CDC596.pdf
STP08CDC596M
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 120MA 16SO
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 120mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 8
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply (Min): 3.3V
Produkt ist nicht verfügbar
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STP08CL596M STP08CL.pdf
STP08CL596M
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 90MA 16SO
Part Status: Obsolete
Voltage - Supply (Max): 3.6V
Voltage - Supply (Min): 3V
Supplier Device Package: 16-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 90mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 8
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Mounting Type: Surface Mount
Voltage - Output: 16V
Produkt ist nicht verfügbar
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STP100NF04 stp100nf04.pdf
STP100NF04
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.3 EUR
50+2.65 EUR
100+2.39 EUR
Mindestbestellmenge: 4
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STP10NK60ZFP description en.CD00002815.pdf
STP10NK60ZFP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
50+3.37 EUR
100+3.06 EUR
Mindestbestellmenge: 3
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STP10NK70Z en.CD00003116.pdf
STP10NK70Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.78 EUR
50+3.48 EUR
100+3.16 EUR
Mindestbestellmenge: 3
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STP10NK80Z en.CD00003020.pdf
STP10NK80Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.57 EUR
50+4.48 EUR
100+4.08 EUR
Mindestbestellmenge: 3
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STP11NK40Z description en.CD00003028.pdf
STP11NK40Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
50+2.02 EUR
100+1.82 EUR
500+1.47 EUR
Mindestbestellmenge: 5
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STP11NK50Z en.CD00003024.pdf
STP11NK50Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.02 EUR
50+3.06 EUR
100+2.78 EUR
Mindestbestellmenge: 3
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STP11NM60FDFP en.CD00002479.pdf
STP11NM60FDFP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STP120NF04 en.CD00050267.pdf
STP120NF04
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP12NK30Z en.CD00003186.pdf
STP12NK30Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 9A TO220AB
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
50+2.39 EUR
100+2.18 EUR
500+1.81 EUR
1000+1.69 EUR
Mindestbestellmenge: 4
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STP12NK80Z en.CD00003379.pdf
STP12NK80Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 10.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.16 EUR
50+3.19 EUR
100+2.9 EUR
500+2.61 EUR
Mindestbestellmenge: 3
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STP12NM50FD en.CD00002913.pdf
STP12NM50FD
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
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STP140NF75 en.CD00003199.pdf
STP140NF75
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 70A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
50+3.32 EUR
100+3.01 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP14NF10 en.CD00002419.pdf
STP14NF10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP14NK60Z en.CD00003050.pdf
STP14NK60Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar
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STP15NK50ZFP description en.CD00003043.pdf
STP15NK50ZFP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Produkt ist nicht verfügbar
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STP16CP596B1R en.CD00052412.pdf
STP16CP596B1R
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 50MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 16V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STP16CP596MTR en.CD00052412.pdf
STP16CP596MTR
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 50MA 24SO
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STP16CP596TTR en.CD00052412.pdf
STP16CP596TTR
Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Min): 3V
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply (Max): 5.5V
Type: Linear
Supplier Device Package: 24-TSSOP
Topology: Shift Register
Frequency: 25MHz
Internal Switch(s): Yes
Number of Outputs: 16
Mounting Type: Surface Mount
Current - Output / Channel: 50mA
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STP16CP596XTTR en.CD00052412.pdf
STP16CP596XTTR
Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 50MA 24TSSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-TSSOP-EP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 25MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STP16NF06FP description en.CD00002501.pdf
STP16NF06FP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Produkt ist nicht verfügbar
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STP16NS25FP en.CD00002244.pdf
STP16NS25FP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Produkt ist nicht verfügbar
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STP17NK40Z en.CD00003118.pdf
STP17NK40Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 15A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP200NF03 en.CD00003018.pdf
STP200NF03
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
50+2.32 EUR
100+2.09 EUR
500+1.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STP20NM50FD stb20nm50fd.pdf
STP20NM50FD
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Produkt ist nicht verfügbar
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STP20NM50FP en.CD00002374.pdf
STP20NM50FP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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STP20NM60FD en.CD00003368.pdf
STP20NM60FD
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 411 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.13 EUR
50+6.55 EUR
100+6.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STP22NF03L en.CD00002147.pdf
STP22NF03L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 22A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP22NS25Z en.CD00002794.pdf
STP22NS25Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP30NF10 en.CD00002440.pdf
STP30NF10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 35A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP36NF06L description en.CD00003405.pdf
STP36NF06L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 30A TO220AB
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
50+1.27 EUR
100+1.2 EUR
500+0.92 EUR
1000+0.84 EUR
Mindestbestellmenge: 7
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STP3HNK90Z ST%28F%2CP%293HNK90Z.pdf
STP3HNK90Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP3NK60Z en.CD00003099.pdf
STP3NK60Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
50+1.59 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STP3NK90Z en.CD00003170.pdf
STP3NK90Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
50+2.23 EUR
100+2.01 EUR
500+1.62 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STP40NF10L en.CD00003023.pdf
STP40NF10L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±17V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
50+2.52 EUR
100+2.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STP45NF3LL en.CD00002562.pdf
STP45NF3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 45A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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STP55NF06L en.CD00002690.pdf
STP55NF06L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.31 EUR
50+2.12 EUR
100+1.91 EUR
500+1.54 EUR
1000+1.42 EUR
Mindestbestellmenge: 5
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STP5NK80Z en.CD00003038.pdf
STP5NK80Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.15A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
50+2.24 EUR
100+2.02 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STP60NE06L-16 en.CD00002045.pdf
STP60NE06L-16
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP60NF03L en.CD00001901.pdf
STP60NF03L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 60A TO220AB
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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