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SM6T12CAY SM6T12CAY STMicroelectronics SM6TxxY.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 36A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SMB
Max. off-state voltage: 10.2V
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1µA
Tolerance: ±5%
Produkt ist nicht verfügbar
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SM15T12CA SM15T12CA STMicroelectronics sm15t12ca.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 90A
Peak pulse power dissipation: 1.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SMC
Max. off-state voltage: 10.2V
Kind of package: reel; tape
Leakage current: 1µA
Produkt ist nicht verfügbar
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SM30T12CAY STMicroelectronics en.DM00035136.pdf Category: Diodes - Unclassified
Description: SM30T12CAY
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.79 EUR
Mindestbestellmenge: 2500
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STPS3150U STPS3150U STMicroelectronics STPS3150U.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 150V
Max. forward impulse current: 80A
auf Bestellung 6789 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
171+0.42 EUR
196+0.37 EUR
298+0.24 EUR
348+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 120
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STPS3150RL STPS3150RL STMicroelectronics stps3150.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
auf Bestellung 1441 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
650+0.15 EUR
Mindestbestellmenge: 250
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STPS3150AFN STMicroelectronics stps3150.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 2mA
Produkt ist nicht verfügbar
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STPS3150UY STMicroelectronics stps3150-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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STD5NM60-1 STD5NM60-1 STMicroelectronics std5nm60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
auf Bestellung 123 Stücke:
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47+1.53 EUR
75+1.27 EUR
Mindestbestellmenge: 47
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STP26NM60N STP26NM60N STMicroelectronics stp26nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.56 EUR
17+4.36 EUR
25+4.15 EUR
Mindestbestellmenge: 11
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STW26NM60N STW26NM60N STMicroelectronics STW26NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.68 EUR
16+4.59 EUR
30+4.02 EUR
60+3.69 EUR
90+3.52 EUR
120+3.39 EUR
150+3.29 EUR
Mindestbestellmenge: 10
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STP11NM60FD STP11NM60FD STMicroelectronics STP11NM60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.15 EUR
20+3.72 EUR
25+3.42 EUR
50+3.22 EUR
100+3.02 EUR
Mindestbestellmenge: 12
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STP22NM60N STP22NM60N STMicroelectronics en.CD00237949.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 64A
auf Bestellung 74 Stücke:
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18+4.15 EUR
32+2.26 EUR
50+1.87 EUR
Mindestbestellmenge: 18
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STF18NM60N STF18NM60N STMicroelectronics STF18NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
32+2.25 EUR
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STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.65 EUR
26+2.85 EUR
29+2.47 EUR
35+2.1 EUR
50+1.92 EUR
100+1.77 EUR
Mindestbestellmenge: 20
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STW48NM60N STW48NM60N STMicroelectronics STW48NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.65 EUR
14+5.36 EUR
30+4.35 EUR
60+4.16 EUR
Mindestbestellmenge: 9
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STD10NM60N STD10NM60N STMicroelectronics STD10NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
44+1.66 EUR
100+1.56 EUR
500+1.47 EUR
1000+1.4 EUR
Mindestbestellmenge: 30
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STF22NM60N STF22NM60N STMicroelectronics STF22NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.61 EUR
22+3.27 EUR
50+2.86 EUR
Mindestbestellmenge: 13
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STP11NM60 STP11NM60 STMicroelectronics STP11NM60_STB11NM60T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 44A
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.25 EUR
23+3.23 EUR
25+2.95 EUR
50+2.75 EUR
Mindestbestellmenge: 14
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STW34NM60N STW34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.97 EUR
12+6.13 EUR
30+5.55 EUR
60+5.19 EUR
90+4.99 EUR
120+4.85 EUR
150+4.73 EUR
300+4.38 EUR
Mindestbestellmenge: 8
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STP11NM60ND STP11NM60ND STMicroelectronics STD11NM60ND.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
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STU10NM60N STU10NM60N STMicroelectronics STD10NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
46+1.57 EUR
53+1.36 EUR
75+1.23 EUR
Mindestbestellmenge: 42
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STW18NM60N STW18NM60N STMicroelectronics stw18nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.49 EUR
24+3.1 EUR
30+2.8 EUR
Mindestbestellmenge: 21
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STP18NM60N STP18NM60N STMicroelectronics en.CD00238184.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.49 EUR
41+1.74 EUR
50+1.52 EUR
Mindestbestellmenge: 21
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STP24NM60N STP24NM60N STMicroelectronics stp24nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
24+3.06 EUR
33+2.17 EUR
39+1.86 EUR
Mindestbestellmenge: 17
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STP34NM60N STP34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.2 EUR
10+8.82 EUR
Mindestbestellmenge: 8
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STF34NM60ND STF34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
17+4.46 EUR
18+4.06 EUR
25+3.76 EUR
Mindestbestellmenge: 16
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STF24NM60N STF24NM60N STMicroelectronics STF24NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
18+4.16 EUR
25+2.9 EUR
32+2.25 EUR
50+1.97 EUR
Mindestbestellmenge: 17
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STW34NM60ND STW34NM60ND STMicroelectronics STx34NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.15 EUR
10+7.25 EUR
Mindestbestellmenge: 9
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STL3NM60N STMicroelectronics en.DM00048286.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
Produkt ist nicht verfügbar
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STU7NM60N STMicroelectronics en.CD00252114.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Produkt ist nicht verfügbar
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STD3NM60N STMicroelectronics en.DM00052307.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Produkt ist nicht verfügbar
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STD5NM60T4 STD5NM60T4 STMicroelectronics std5nm60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STD9NM60N STMicroelectronics en.CD00286931.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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STP9NM60N STMicroelectronics en.CD00286931.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STGP20NC60V STGP20NC60V STMicroelectronics en.CD00003669.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 600V
Gate charge: 0.1µC
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SMAJ85CA-TR SMAJ85CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ154A-TR SMAJ154A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ30CA-TR SMAJ30CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
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348+0.21 EUR
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics SMBJ6.5CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics cd00001366.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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STM8S103F2M6 STM8S103F2M6 STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2M6TR STM8S103F2M6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P3TR STM8S103F2P3TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P6TR STM8S103F2P6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3M6TR STM8S103F3M6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3 STMicroelectronics en.CD00226640.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3TR STM8S103F3P3TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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BTB24-800CWRG BTB24-800CWRG STMicroelectronics btb24.pdf Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Mounting: THT
auf Bestellung 108 Stücke:
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29+2.5 EUR
33+2.22 EUR
41+1.77 EUR
50+1.44 EUR
59+1.23 EUR
100+1.09 EUR
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STM32F205RGT6 STM32F205RGT6 STMicroelectronics STM32F205VCT6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
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STM32F205RGT6TR STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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STM32F205RGT6V STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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STM32F205RGT6W STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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SCTW40N120G2VAG STMicroelectronics sctw40n120g2vag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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SCTH40N120G2V-7 STMicroelectronics scth40n120g2v-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTH40N120G2V7AG STMicroelectronics scth40n120g2v7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTW40N120G2V STMicroelectronics sctw40n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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L6226D L6226D STMicroelectronics l6226.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
auf Bestellung 36 Stücke:
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L6206D L6206D STMicroelectronics l6206.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Application: DC motors
Topology: H-bridge
Kind of package: tube
Mounting: SMD
Case: SO24
Operating temperature: -25...125°C
Supply voltage: 8...52V
Output current: 2.8A
On-state resistance: 0.3Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
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STP16DP05MTR STMicroelectronics en.CD00149163.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Integrated circuit features: fault detection; shift register
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Operating temperature: -40...125°C
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
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STP16CPS05MTR STMicroelectronics en.CD00126635.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Operating temperature: -40...125°C
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
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SM6T12CAY SM6TxxY.pdf
SM6T12CAY
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 36A
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SMB
Max. off-state voltage: 10.2V
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1µA
Tolerance: ±5%
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SM15T12CA sm15t12ca.pdf
SM15T12CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 90A
Peak pulse power dissipation: 1.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SMC
Max. off-state voltage: 10.2V
Kind of package: reel; tape
Leakage current: 1µA
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SM30T12CAY en.DM00035136.pdf
Hersteller: STMicroelectronics
Category: Diodes - Unclassified
Description: SM30T12CAY
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2500+0.79 EUR
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STPS3150U STPS3150U.pdf
STPS3150U
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 150V
Max. forward impulse current: 80A
auf Bestellung 6789 Stücke:
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120+0.6 EUR
171+0.42 EUR
196+0.37 EUR
298+0.24 EUR
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500+0.19 EUR
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STPS3150RL stps3150.pdf
STPS3150RL
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
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250+0.29 EUR
650+0.15 EUR
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STPS3150AFN stps3150.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.89V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 2mA
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STPS3150UY stps3150-y.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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STD5NM60-1 std5nm60.pdf
STD5NM60-1
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
75+1.27 EUR
Mindestbestellmenge: 47
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STP26NM60N stp26nm60n.pdf
STP26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.56 EUR
17+4.36 EUR
25+4.15 EUR
Mindestbestellmenge: 11
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STW26NM60N STW26NM60N-DTE.pdf
STW26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.68 EUR
16+4.59 EUR
30+4.02 EUR
60+3.69 EUR
90+3.52 EUR
120+3.39 EUR
150+3.29 EUR
Mindestbestellmenge: 10
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STP11NM60FD STP11NM60FD.pdf
STP11NM60FD
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 7A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.15 EUR
20+3.72 EUR
25+3.42 EUR
50+3.22 EUR
100+3.02 EUR
Mindestbestellmenge: 12
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STP22NM60N en.CD00237949.pdf
STP22NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 64A
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
32+2.26 EUR
50+1.87 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
STF18NM60N STF18NM60N.pdf
STF18NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
32+2.25 EUR
Mindestbestellmenge: 22
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STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
26+2.85 EUR
29+2.47 EUR
35+2.1 EUR
50+1.92 EUR
100+1.77 EUR
Mindestbestellmenge: 20
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STW48NM60N STW48NM60N-DTE.pdf
STW48NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.65 EUR
14+5.36 EUR
30+4.35 EUR
60+4.16 EUR
Mindestbestellmenge: 9
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STD10NM60N STD10NM60N.pdf
STD10NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
44+1.66 EUR
100+1.56 EUR
500+1.47 EUR
1000+1.4 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
STF22NM60N STF22NM60N.pdf
STF22NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.61 EUR
22+3.27 EUR
50+2.86 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
STP11NM60 STP11NM60_STB11NM60T4.pdf
STP11NM60
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 44A
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
23+3.23 EUR
25+2.95 EUR
50+2.75 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
STW34NM60N STW34NM60N-DTE.pdf
STW34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.97 EUR
12+6.13 EUR
30+5.55 EUR
60+5.19 EUR
90+4.99 EUR
120+4.85 EUR
150+4.73 EUR
300+4.38 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
STP11NM60ND STD11NM60ND.pdf
STP11NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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STU10NM60N STD10NM60N.pdf
STU10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
46+1.57 EUR
53+1.36 EUR
75+1.23 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
STW18NM60N stw18nm60n.pdf
STW18NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
24+3.1 EUR
30+2.8 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
STP18NM60N en.CD00238184.pdf
STP18NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
41+1.74 EUR
50+1.52 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
STP24NM60N stp24nm60n.pdf
STP24NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
24+3.06 EUR
33+2.17 EUR
39+1.86 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
STP34NM60N STW34NM60N-DTE.pdf
STP34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.2 EUR
10+8.82 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
STF34NM60ND STx34NM60ND_DS.pdf
STF34NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.46 EUR
18+4.06 EUR
25+3.76 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
STF24NM60N STF24NM60N.pdf
STF24NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
18+4.16 EUR
25+2.9 EUR
32+2.25 EUR
50+1.97 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
STW34NM60ND STx34NM60ND-DTE.pdf
STW34NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.25 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STL3NM60N en.DM00048286.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
Produkt ist nicht verfügbar
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STU7NM60N en.CD00252114.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD3NM60N en.DM00052307.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Produkt ist nicht verfügbar
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STD5NM60T4 std5nm60.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STD9NM60N en.CD00286931.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP9NM60N en.CD00286931.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGP20NC60V description en.CD00003669.pdf
STGP20NC60V
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 600V
Gate charge: 0.1µC
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
18+4.05 EUR
23+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ85CA-TR SMAJxxX_ser.pdf
SMAJ85CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 4878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
210+0.34 EUR
278+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.15 EUR
2500+0.14 EUR
Mindestbestellmenge: 167
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SMAJ154A-TR SMAJxxX_ser.pdf
SMAJ154A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 4342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
155+0.46 EUR
172+0.42 EUR
261+0.27 EUR
305+0.23 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 132
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SMAJ30CA-TR SMAJxxX_ser.pdf
SMAJ30CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
auf Bestellung 7874 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
307+0.23 EUR
348+0.21 EUR
410+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 167
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SMBJ6.5CA-TR SMBJ6.5CA.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
Mindestbestellmenge: 358
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SMBJ6.5CA-TR cd00001366.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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STM8S103F2M6 STM8S103F2-DTE.pdf
STM8S103F2M6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F2M6TR STM8S103F2-DTE.pdf
STM8S103F2M6TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P3TR STM8S103F2-DTE.pdf
STM8S103F2P3TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F2P6TR STM8S103F2-DTE.pdf
STM8S103F2P6TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3M6TR STM8S103F2-DTE.pdf
STM8S103F3M6TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F3P3 en.CD00226640.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F3P3TR STM8S103F2-DTE.pdf
STM8S103F3P3TR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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BTB24-800CWRG btb24.pdf
BTB24-800CWRG
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Mounting: THT
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
33+2.22 EUR
41+1.77 EUR
50+1.44 EUR
59+1.23 EUR
100+1.09 EUR
Mindestbestellmenge: 29
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STM32F205RGT6 STM32F205VCT6.pdf
STM32F205RGT6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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STM32F205RGT6TR stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F205RGT6V stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F205RGT6W stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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SCTW40N120G2VAG sctw40n120g2vag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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SCTH40N120G2V-7 scth40n120g2v-7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTH40N120G2V7AG scth40n120g2v7ag.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTW40N120G2V sctw40n120g2v.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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L6226D l6226.pdf
L6226D
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.52 EUR
10+10.05 EUR
25+9.58 EUR
32+9.47 EUR
Mindestbestellmenge: 7
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L6206D l6206.pdf
L6206D
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Application: DC motors
Topology: H-bridge
Kind of package: tube
Mounting: SMD
Case: SO24
Operating temperature: -25...125°C
Supply voltage: 8...52V
Output current: 2.8A
On-state resistance: 0.3Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
10+8.12 EUR
32+7.74 EUR
Mindestbestellmenge: 9
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STP16DP05MTR en.CD00149163.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Integrated circuit features: fault detection; shift register
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Operating temperature: -40...125°C
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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STP16CPS05MTR en.CD00126635.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Operating temperature: -40...125°C
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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