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STGAP1S STGAP1S STMicroelectronics STGAP1S.pdf Description: DGTL ISO 2.5KV 1CH GATE DVR 24SO
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 24-SO
Rise / Fall Time (Typ): 25ns, 25ns (Max)
Propagation Delay tpLH / tpHL (Max): 130ns, 130ns
Pulse Width Distortion (Max): 10ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 36V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ST1L08SPUR ST1L08SPUR STMicroelectronics en.DM00123507.pdf Description: IC REG LIN POS ADJ 800MA 8-DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x3)
Voltage - Output (Max): 4V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 80dB ~ 50dB (100Hz ~ 1MHz)
Voltage Dropout (Max): 0.09V @ 800mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2500 Stücke:
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2500+0.5 EUR
Mindestbestellmenge: 2500
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ST1L08SPUR ST1L08SPUR STMicroelectronics en.DM00123507.pdf Description: IC REG LIN POS ADJ 800MA 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x3)
Voltage - Output (Max): 4V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 80dB ~ 50dB (100Hz ~ 1MHz)
Voltage Dropout (Max): 0.09V @ 800mA
Protection Features: Over Current, Over Temperature
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17+1.09 EUR
23+0.77 EUR
26+0.69 EUR
100+0.61 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.52 EUR
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STM32F070CBT6 STM32F070CBT6 STMicroelectronics en.DM00141386.pdf Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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100+2.93 EUR
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STM32F070RBT6 STM32F070RBT6 STMicroelectronics en.DM00141386.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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MP34DT02TR MP34DT02TR STMicroelectronics en.DM00122468.pdf Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 60dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Top
Height (Max): 0.046" (1.16mm)
Voltage - Rated: 1.8 V
Current - Supply: 600 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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MP34DT01TR-M MP34DT01TR-M STMicroelectronics en.DM00121815.pdf Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 61dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Top
Height (Max): 0.046" (1.16mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 600 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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MP34DB02TR MP34DB02TR STMicroelectronics MP34DB02_Rev_2.pdf Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 62.6dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.10mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 650 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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MP34DT01TR-M MP34DT01TR-M STMicroelectronics en.DM00121815.pdf Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 61dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Top
Height (Max): 0.046" (1.16mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 600 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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MP34DB02TR MP34DB02TR STMicroelectronics MP34DB02_Rev_2.pdf Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 62.6dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.10mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 650 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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STM32303E-EVAL STM32303E-EVAL STMicroelectronics en.DM00116575.pdf Description: STM32F303VE EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F303VE
Part Status: Active
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1+368.81 EUR
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STD16N50M2 STD16N50M2 STMicroelectronics en.DM00124257.pdf Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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10+2.29 EUR
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500+1.34 EUR
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STGB20H60DF STGB20H60DF STMicroelectronics en.DM00066598.pdf Description: IGBT TRENCH FS 600V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGB30H60DF STGB30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGB30V60DF STGB30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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4+5.12 EUR
10+3.34 EUR
100+2.32 EUR
500+2 EUR
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STH240N10F7-2 STH240N10F7-2 STMicroelectronics en.DM00111318.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Produkt ist nicht verfügbar
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STH260N6F6-6 STH260N6F6-6 STMicroelectronics STH260N6F6-6.pdf Description: MOSFET N-CH 60V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Produkt ist nicht verfügbar
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STL17N65M5 STL17N65M5 STMicroelectronics Description: MOSFET N-CH 650V 1.8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 374mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
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STL18N60M2 STL18N60M2 STMicroelectronics en.DM00121840.pdf Description: MOSFET N-CH 600V 9A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 4.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
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100+2.16 EUR
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STL9P2UH7 STL9P2UH7 STMicroelectronics DM00093324.pdf Description: MOSFET P-CH 20V 9A POWERFLAT
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STS9P2UH7 STS9P2UH7 STMicroelectronics en.DM00093327.pdf Description: MOSFET P-CH 20V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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STT3P2UH7 STT3P2UH7 STMicroelectronics DM00091040.pdf Description: MOSFET P-CH 30V 3A SOT23-6
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STT7P2UH7 STT7P2UH7 STMicroelectronics en.DM00093326.pdf Description: MOSFET P-CH 20V 7A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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STL9P2UH7 STL9P2UH7 STMicroelectronics DM00093324.pdf Description: MOSFET P-CH 20V 9A POWERFLAT
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STT3P2UH7 STT3P2UH7 STMicroelectronics DM00091040.pdf Description: MOSFET P-CH 30V 3A SOT23-6
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STD16N50M2 STD16N50M2 STMicroelectronics en.DM00124257.pdf Description: MOSFET N-CH 500V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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STGB20H60DF STGB20H60DF STMicroelectronics en.DM00066598.pdf Description: IGBT TRENCH FS 600V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGB30H60DF STGB30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGB30V60DF STGB30V60DF STMicroelectronics stgb30v60df.pdf Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
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1000+1.75 EUR
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STL18N60M2 STL18N60M2 STMicroelectronics en.DM00121840.pdf Description: MOSFET N-CH 600V 9A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 4.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
Produkt ist nicht verfügbar
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STL9P2UH7 STL9P2UH7 STMicroelectronics DM00093324.pdf Description: MOSFET P-CH 20V 9A POWERFLAT
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STS9P2UH7 STS9P2UH7 STMicroelectronics en.DM00093327.pdf Description: MOSFET P-CH 20V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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DLPF-GP-01D3 DLPF-GP-01D3 STMicroelectronics en.DM00130193.pdf Description: BALUN 2.4-2.5GHZ 100/100 16SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-SMD
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 100 / 100Ohm
Insertion Loss (Max): 1.8dB
Return Loss (Min): -16dB
Part Status: Obsolete
Produkt ist nicht verfügbar
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STT3P2UH7 STT3P2UH7 STMicroelectronics DM00091040.pdf Description: MOSFET P-CH 30V 3A SOT23-6
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STT7P2UH7 STT7P2UH7 STMicroelectronics en.DM00093326.pdf Description: MOSFET P-CH 20V 7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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EFL700A39 EFL700A39 STMicroelectronics CD00270103.pdf Description: BATT LITHIUM THIN FILM RECHRG 2-
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STE145N65M5 STE145N65M5 STMicroelectronics en.DM00100413.pdf Description: MOSFET N-CH 650V 143A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Power Dissipation (Max): 679W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
1+77.77 EUR
10+58.53 EUR
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STF10N80K5 STF10N80K5 STMicroelectronics en.DM00122529.pdf Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
50+2.18 EUR
100+2.17 EUR
500+2.09 EUR
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STF16N50M2 STF16N50M2 STMicroelectronics en.DM00124257.pdf Description: MOSFET N-CH 500V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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STF24N60DM2 STF24N60DM2 STMicroelectronics en.DM00099968.pdf Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.12 EUR
50+2.69 EUR
100+2.43 EUR
500+2.22 EUR
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STF5N105K5 STF5N105K5 STMicroelectronics en.DM00126746.pdf Description: MOSFET N-CH 1050V 3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 100 V
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.16 EUR
50+2.59 EUR
100+2.34 EUR
500+1.9 EUR
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STGFW20H65FB STGFW20H65FB STMicroelectronics en.DM00130550.pdf Description: IGBT TRENCH FS 650V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/139ns
Switching Energy: 77µJ (on), 170µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 52 W
Produkt ist nicht verfügbar
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STGFW30H65FB STGFW30H65FB STMicroelectronics en.DM00106084.pdf Description: IGBT 650V 60A 58W TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3PF-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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STGFW40V60DF STGFW40V60DF STMicroelectronics en.DM00080360.pdf Description: IGBT TRENCH FS 600V 80A TO-3PF-3
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PF-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 62.5 W
auf Bestellung 518 Stücke:
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3+6.05 EUR
30+3.33 EUR
120+2.73 EUR
510+2.29 EUR
Mindestbestellmenge: 3
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STGIPL14K60-S STGIPL14K60-S STMicroelectronics CD00231331.pdf Description: IGBT IPM MODULE 14A 600V 38SDIP
auf Bestellung 114 Stücke:
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STGIPN3H60T-H STGIPN3H60T-H STMicroelectronics en.DM00103391.pdf Description: MOD IGBT SLLIMM NANO 26-NDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1000Vrms
Part Status: Active
Current: 3 A
Voltage: 600 V
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STGIPS10K60A2 STGIPS10K60A2 STMicroelectronics Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS15C60 STGIPS15C60 STMicroelectronics en.DM00091589.pdf Description: MOD IGBT SLLIMM 15A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS15C60-H STGIPS15C60-H STMicroelectronics Description: MOD IGBT SLLIMM 15A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS20C60-H STGIPS20C60-H STMicroelectronics en.DM00081835.pdf Description: MOD IPM SLLIMM 20A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS30C60T-H STGIPS30C60T-H STMicroelectronics Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW20H65FB STGW20H65FB STMicroelectronics en.DM00130550.pdf Description: IGBT 650V 40A 168W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/139ns
Switching Energy: 77µJ (on), 170µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 168 W
Produkt ist nicht verfügbar
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STGW30H60DFB STGW30H60DFB STMicroelectronics en.DM00125118.pdf Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 2176 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.86 EUR
30+2.62 EUR
120+2.13 EUR
510+1.77 EUR
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STGW80H65FB STGW80H65FB STMicroelectronics en.DM00118301.pdf Description: IGBT 650V 120A 469W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGW80V60F STGW80V60F STMicroelectronics en.DM00117327.pdf Description: IGBT 600V 120A 469W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/220ns
Switching Energy: 1.8mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 448 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGWA25M120DF3 STGWA25M120DF3 STMicroelectronics en.DM00113757.pdf Description: IGBT TRENCH FS 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 850µJ (on), 1.3mJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 745 Stücke:
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2+10.01 EUR
30+5.68 EUR
120+4.73 EUR
510+4.03 EUR
Mindestbestellmenge: 2
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STGWA80H65FB STGWA80H65FB STMicroelectronics en.DM00118301.pdf Description: IGBT TRENCH FS 650V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGWT20H65FB STGWT20H65FB STMicroelectronics en.DM00130550.pdf Description: IGBT TRENCH FS 650V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/139ns
Switching Energy: 77µJ (on), 170µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 168 W
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.21 EUR
30+2.83 EUR
120+2.3 EUR
510+1.92 EUR
Mindestbestellmenge: 4
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STGWT30H60DFB STGWT30H60DFB STMicroelectronics en.DM00125118.pdf Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
30+3.13 EUR
120+2.56 EUR
Mindestbestellmenge: 4
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STGWT80H65FB STGWT80H65FB STMicroelectronics en.DM00118301.pdf Description: IGBT TRENCH FS 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGAP1S STGAP1S.pdf
STGAP1S
Hersteller: STMicroelectronics
Description: DGTL ISO 2.5KV 1CH GATE DVR 24SO
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Technology: Magnetic Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 24-SO
Rise / Fall Time (Typ): 25ns, 25ns (Max)
Propagation Delay tpLH / tpHL (Max): 130ns, 130ns
Pulse Width Distortion (Max): 10ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 36V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ST1L08SPUR en.DM00123507.pdf
ST1L08SPUR
Hersteller: STMicroelectronics
Description: IC REG LIN POS ADJ 800MA 8-DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x3)
Voltage - Output (Max): 4V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 80dB ~ 50dB (100Hz ~ 1MHz)
Voltage Dropout (Max): 0.09V @ 800mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.5 EUR
Mindestbestellmenge: 2500
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ST1L08SPUR en.DM00123507.pdf
ST1L08SPUR
Hersteller: STMicroelectronics
Description: IC REG LIN POS ADJ 800MA 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x3)
Voltage - Output (Max): 4V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 80dB ~ 50dB (100Hz ~ 1MHz)
Voltage Dropout (Max): 0.09V @ 800mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
23+0.77 EUR
26+0.69 EUR
100+0.61 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.52 EUR
Mindestbestellmenge: 17
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STM32F070CBT6 en.DM00141386.pdf
STM32F070CBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 1154 Stücke:
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Anzahl Preis
4+4.73 EUR
10+3.55 EUR
25+3.26 EUR
100+2.93 EUR
250+2.78 EUR
500+2.68 EUR
1000+2.6 EUR
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STM32F070RBT6 en.DM00141386.pdf
STM32F070RBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
10+3.88 EUR
25+3.56 EUR
Mindestbestellmenge: 4
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MP34DT02TR en.DM00122468.pdf
MP34DT02TR
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 60dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Top
Height (Max): 0.046" (1.16mm)
Voltage - Rated: 1.8 V
Current - Supply: 600 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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MP34DT01TR-M en.DM00121815.pdf
MP34DT01TR-M
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 61dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Top
Height (Max): 0.046" (1.16mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 600 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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MP34DB02TR MP34DB02_Rev_2.pdf
MP34DB02TR
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 62.6dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.10mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 650 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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MP34DT01TR-M en.DM00121815.pdf
MP34DT01TR-M
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 61dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Top
Height (Max): 0.046" (1.16mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 600 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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MP34DB02TR MP34DB02_Rev_2.pdf
MP34DB02TR
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 62.6dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.10mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 650 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Produkt ist nicht verfügbar
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STM32303E-EVAL en.DM00116575.pdf
STM32303E-EVAL
Hersteller: STMicroelectronics
Description: STM32F303VE EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F303VE
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+368.81 EUR
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STD16N50M2 en.DM00124257.pdf
STD16N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.29 EUR
100+1.64 EUR
500+1.34 EUR
Mindestbestellmenge: 6
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STGB20H60DF en.DM00066598.pdf
STGB20H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGB30H60DF en.DM00040343.pdf
STGB30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGB30V60DF stgb30v60df.pdf
STGB30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
10+3.34 EUR
100+2.32 EUR
500+2 EUR
Mindestbestellmenge: 4
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STH240N10F7-2 en.DM00111318.pdf
STH240N10F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Produkt ist nicht verfügbar
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STH260N6F6-6 STH260N6F6-6.pdf
STH260N6F6-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Produkt ist nicht verfügbar
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STL17N65M5
STL17N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 1.8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 374mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Produkt ist nicht verfügbar
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STL18N60M2 en.DM00121840.pdf
STL18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 9A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 4.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 1743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
10+3.12 EUR
100+2.16 EUR
500+1.83 EUR
Mindestbestellmenge: 4
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STL9P2UH7 DM00093324.pdf
STL9P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 9A POWERFLAT
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
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STS9P2UH7 en.DM00093327.pdf
STS9P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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STT3P2UH7 DM00091040.pdf
STT3P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 3A SOT23-6
auf Bestellung 3663 Stücke:
Lieferzeit 10-14 Tag (e)
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STT7P2UH7 en.DM00093326.pdf
STT7P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 7A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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STL9P2UH7 DM00093324.pdf
STL9P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 9A POWERFLAT
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)
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STT3P2UH7 DM00091040.pdf
STT3P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 3A SOT23-6
auf Bestellung 3663 Stücke:
Lieferzeit 10-14 Tag (e)
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STD16N50M2 en.DM00124257.pdf
STD16N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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STGB20H60DF en.DM00066598.pdf
STGB20H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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STGB30H60DF en.DM00040343.pdf
STGB30H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGB30V60DF stgb30v60df.pdf
STGB30V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.75 EUR
Mindestbestellmenge: 1000
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STL18N60M2 en.DM00121840.pdf
STL18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 9A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 4.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
Produkt ist nicht verfügbar
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STL9P2UH7 DM00093324.pdf
STL9P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 9A POWERFLAT
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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STS9P2UH7 en.DM00093327.pdf
STS9P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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DLPF-GP-01D3 en.DM00130193.pdf
DLPF-GP-01D3
Hersteller: STMicroelectronics
Description: BALUN 2.4-2.5GHZ 100/100 16SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-SMD
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 100 / 100Ohm
Insertion Loss (Max): 1.8dB
Return Loss (Min): -16dB
Part Status: Obsolete
Produkt ist nicht verfügbar
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STT3P2UH7 DM00091040.pdf
STT3P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 3A SOT23-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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STT7P2UH7 en.DM00093326.pdf
STT7P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Produkt ist nicht verfügbar
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EFL700A39 CD00270103.pdf
EFL700A39
Hersteller: STMicroelectronics
Description: BATT LITHIUM THIN FILM RECHRG 2-
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
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STE145N65M5 en.DM00100413.pdf
STE145N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 143A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Power Dissipation (Max): 679W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.77 EUR
10+58.53 EUR
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STF10N80K5 en.DM00122529.pdf
STF10N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
50+2.18 EUR
100+2.17 EUR
500+2.09 EUR
Mindestbestellmenge: 7
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STF16N50M2 en.DM00124257.pdf
STF16N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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STF24N60DM2 en.DM00099968.pdf
STF24N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
50+2.69 EUR
100+2.43 EUR
500+2.22 EUR
Mindestbestellmenge: 4
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STF5N105K5 en.DM00126746.pdf
STF5N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 100 V
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
50+2.59 EUR
100+2.34 EUR
500+1.9 EUR
Mindestbestellmenge: 4
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STGFW20H65FB en.DM00130550.pdf
STGFW20H65FB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/139ns
Switching Energy: 77µJ (on), 170µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 52 W
Produkt ist nicht verfügbar
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STGFW30H65FB en.DM00106084.pdf
STGFW30H65FB
Hersteller: STMicroelectronics
Description: IGBT 650V 60A 58W TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3PF-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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STGFW40V60DF en.DM00080360.pdf
STGFW40V60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3PF-3
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PF-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 62.5 W
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
30+3.33 EUR
120+2.73 EUR
510+2.29 EUR
Mindestbestellmenge: 3
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STGIPL14K60-S CD00231331.pdf
STGIPL14K60-S
Hersteller: STMicroelectronics
Description: IGBT IPM MODULE 14A 600V 38SDIP
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
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STGIPN3H60T-H en.DM00103391.pdf
STGIPN3H60T-H
Hersteller: STMicroelectronics
Description: MOD IGBT SLLIMM NANO 26-NDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1000Vrms
Part Status: Active
Current: 3 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS10K60A2
STGIPS10K60A2
Hersteller: STMicroelectronics
Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS15C60 en.DM00091589.pdf
STGIPS15C60
Hersteller: STMicroelectronics
Description: MOD IGBT SLLIMM 15A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS15C60-H
STGIPS15C60-H
Hersteller: STMicroelectronics
Description: MOD IGBT SLLIMM 15A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS20C60-H en.DM00081835.pdf
STGIPS20C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 20A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGIPS30C60T-H
STGIPS30C60T-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 30A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW20H65FB en.DM00130550.pdf
STGW20H65FB
Hersteller: STMicroelectronics
Description: IGBT 650V 40A 168W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/139ns
Switching Energy: 77µJ (on), 170µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 168 W
Produkt ist nicht verfügbar
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STGW30H60DFB en.DM00125118.pdf
STGW30H60DFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 2176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
30+2.62 EUR
120+2.13 EUR
510+1.77 EUR
1020+1.64 EUR
2010+1.53 EUR
Mindestbestellmenge: 4
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STGW80H65FB en.DM00118301.pdf
STGW80H65FB
Hersteller: STMicroelectronics
Description: IGBT 650V 120A 469W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGW80V60F en.DM00117327.pdf
STGW80V60F
Hersteller: STMicroelectronics
Description: IGBT 600V 120A 469W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/220ns
Switching Energy: 1.8mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 448 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGWA25M120DF3 en.DM00113757.pdf
STGWA25M120DF3
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 850µJ (on), 1.3mJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.01 EUR
30+5.68 EUR
120+4.73 EUR
510+4.03 EUR
Mindestbestellmenge: 2
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STGWA80H65FB en.DM00118301.pdf
STGWA80H65FB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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STGWT20H65FB en.DM00130550.pdf
STGWT20H65FB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/139ns
Switching Energy: 77µJ (on), 170µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 168 W
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
30+2.83 EUR
120+2.3 EUR
510+1.92 EUR
Mindestbestellmenge: 4
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STGWT30H60DFB en.DM00125118.pdf
STGWT30H60DFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.7 EUR
30+3.13 EUR
120+2.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STGWT80H65FB en.DM00118301.pdf
STGWT80H65FB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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