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STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
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100+3.37 EUR
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STF33N65M2 STF33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
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STF40N65M2 STF40N65M2 STMicroelectronics en.DM00158277.pdf Description: MOSFET N-CH 650V 32A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STFW2N105K5 STFW2N105K5 STMicroelectronics en.DM00115969.pdf Description: MOSFET N-CH 1050V 2A ISOWATT
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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STFW40N60M2 STFW40N60M2 STMicroelectronics en.DM00116766.pdf Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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STFW45N65M5 STFW45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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STGIPL30C60-H STGIPL30C60-H STMicroelectronics DM00083056.pdf Description: MOD IPM SLLIMM 8PHASE 38SDIP
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STGIPS10C60T-H STMicroelectronics Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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STGW30H60DLFB STMicroelectronics Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGWA15H120F2 STGWA15H120F2 STMicroelectronics en.DM00109377.pdf Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
Produkt ist nicht verfügbar
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STGWA25H120DF2 STGWA25H120DF2 STMicroelectronics en.DM00066775.pdf Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
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STGWA25H120F2 STGWA25H120F2 STMicroelectronics en.DM00109190.pdf Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STI18N65M2 STI18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
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STI40N65M2 STI40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STP100N8F6 STP100N8F6 STMicroelectronics en.DM00131264.pdf Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
auf Bestellung 18187 Stücke:
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500+1.49 EUR
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5000+1.15 EUR
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STP13N65M2 STP13N65M2 STMicroelectronics en.DM00133031.pdf Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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STP160N4LF6 STP160N4LF6 STMicroelectronics en.DM00114754.pdf Description: MOSFET N-CH 40V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP18N65M2 STP18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
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STP265N6F6AG STP265N6F6AG STMicroelectronics STP265N6F6AG.pdf Description: MOSFET N-CH 60V 180A TO220
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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STP33N65M2 STP33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
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3+8.08 EUR
50+4.16 EUR
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STP40N65M2 STP40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
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STPS20SM120SFP STPS20SM120SFP STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTT 120V 20A TO220FPAB
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FPAB
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STPS20SM120ST STPS20SM120ST STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A TO220
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STPS30SM120SFP STPS30SM120SFP STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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50+1.7 EUR
100+1.52 EUR
500+1.2 EUR
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STPS41H100CTY STPS41H100CTY STMicroelectronics en.DM00024413.pdf Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPSC20H065CTY STPSC20H065CTY STMicroelectronics en.DM00123409.pdf Description: DIODE ARRAY SIC 650V 10A TO-220
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STTH15S12D STTH15S12D STMicroelectronics en.DM00124752.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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STTH15S12W STTH15S12W STMicroelectronics en.DM00124752.pdf Description: DIODE STANDARD 1200V 15A DO247
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-247
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
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STTH30S12W STTH30S12W STMicroelectronics en.DM00124835.pdf Description: DIODE STANDARD 1200V 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Produkt ist nicht verfügbar
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STTH31AC06SWL STTH31AC06SWL STMicroelectronics en.DM00135050.pdf Description: DIODE GEN PURP 600V 30A TO247
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STTH60AC06CWL STTH60AC06CWL STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STTH75S12W STTH75S12W STMicroelectronics en.DM00124839.pdf Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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STTH8S12D STTH8S12D STMicroelectronics en.DM00124704.pdf Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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STU13N65M2 STU13N65M2 STMicroelectronics en.DM00133031.pdf Description: MOSFET N-CH 650V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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STW28N65M2 STW28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
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STW40N65M2 STW40N65M2 STMicroelectronics en.DM00158279.pdf Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
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STW56N60M2 STW56N60M2 STMicroelectronics en.DM00149704.pdf Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
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STW56N60M2-4 STW56N60M2-4 STMicroelectronics en.DM00127606.pdf Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
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STW56N65M2 STW56N65M2 STMicroelectronics en.DM00151747.pdf Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
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LDFMPUR LDFMPUR STMicroelectronics en.DM00063302.pdf Description: IC REG LIN POS ADJ 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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LDFMPVR LDFMPVR STMicroelectronics en.DM00063302.pdf Description: IC REG LIN POS ADJ 500MA 6-DFN
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.3V @ 500mA
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 12V
Supplier Device Package: 6-DFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 800 µA
Output Configuration: Positive
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STM32746G-EVAL2 STM32746G-EVAL2 STMicroelectronics en.DM00172912.pdf Description: STM32 F7 EVAL BRD
Utilized IC / Part: STM32 F7
Core Processor: ARM® Cortex®-M7
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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STM32756G-EVAL2 STM32756G-EVAL2 STMicroelectronics en.DM00172858.pdf Description: STM32 F7 EVAL BRD
Part Status: Not For New Designs
Utilized IC / Part: STM32 F7
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M7
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M95M02-DWMN3TP/K M95M02-DWMN3TP/K STMicroelectronics en.DM00132783.pdf Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 256K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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M95M02-DWMN3TP/K M95M02-DWMN3TP/K STMicroelectronics en.DM00132783.pdf Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 256K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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LF247DT LF247DT STMicroelectronics en.CD00000452.pdf Description: IC OPAMP JFET 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 44 V
Voltage - Supply Span (Min): 44 V
Current - Output / Channel: 40 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 3 mV
Current - Input Bias: 20 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 16V/µs
Current - Supply: 1.4mA (x4 Channels)
Operating Temperature: -40°C ~ 105°C
Amplifier Type: J-FET
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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LM124DT LM124DT STMicroelectronics en.CD00001046.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -55°C ~ 125°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
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LM201ADT LM201ADT STMicroelectronics en.CD00000871.pdf Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 44 V
Voltage - Supply Span (Min): 10 V
Current - Output / Channel: 30 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 700 µV
Current - Input Bias: 25 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.5V/µs
Current - Supply: 1.8mA
Operating Temperature: -40°C ~ 105°C
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LM239APT LM239APT STMicroelectronics en.CD00000460.pdf Description: IC COMPARATOR 4CH 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 2V ~ 32V, ±1V ~ 16V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 2mV @ 30V
Current - Input Bias (Max): 0.1µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
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ST8034HNQR ST8034HNQR STMicroelectronics en.DM00082475.pdf Description: IC INTERFACE SPECIALIZED 24QFN
Supplier Device Package: 24-QFN (4x4)
Applications: Smart Card
Voltage - Supply: 3V, 5V
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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TS272AIDT TS272AIDT STMicroelectronics en.CD00000495.pdf Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x2 Channels)
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
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TS272CDT TS272CDT STMicroelectronics en.CD00000495.pdf Description: IC CMOS 2 CIRCUIT 8SOIC
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 1.1 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.5 MHz
Slew Rate: 5.5V/µs
Current - Supply: 1mA (x2 Channels)
Operating Temperature: 0°C ~ 70°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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TS274AIDT TS274AIDT STMicroelectronics en.CD00000496.pdf Description: IC CMOS 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 45 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 900 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.5 MHz
Slew Rate: 5.5V/µs
Current - Supply: 1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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TS3702IPT TS3702IPT STMicroelectronics en.CD00000882.pdf Description: IC COMPARATOR 2 GEN PUR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V, ±1.35V ~ 8V
Supplier Device Package: 8-TSSOP
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 5mV @ 10V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 20mA
CMRR, PSRR (Typ): 82dB CMRR
Part Status: Active
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TS924AIDT TS924AIDT STMicroelectronics en.CD00001161.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
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TS931BILT TS931BILT STMicroelectronics en.CD00001973.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Voltage - Supply Span (Max): 10 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 5 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SOT-23-5
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 100 kHz
Slew Rate: 0.05V/µs
Current - Supply: 20µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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TS932IDT TS932IDT STMicroelectronics en.CD00001973.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA (x2 Channels)
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 10 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Grade: Automotive
Qualification: AEC-Q100
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TS934IDT TS934IDT STMicroelectronics en.CD00001973.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 10 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 5 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 10 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 100 kHz
Slew Rate: 0.05V/µs
Current - Supply: 20µA (x4 Channels)
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Standard (General Purpose)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
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TS954IDT TS954IDT STMicroelectronics en.CD00001338.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 950µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 35 nA
Voltage - Input Offset: 6 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 10 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
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EFL700PMB EFL700PMB STMicroelectronics en.CD00270103.pdf Description: POWER MGMT BOARD EFL700A39
Produkt ist nicht verfügbar
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STF28N65M2 en.DM00150353.pdf
STF28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
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STF33N65M2 en.DM00151754.pdf
STF33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 990 Stücke:
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STF40N65M2 en.DM00158277.pdf
STF40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STFW2N105K5 en.DM00115969.pdf
STFW2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 436 Stücke:
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STFW40N60M2 en.DM00116766.pdf
STFW40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 254 Stücke:
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STFW45N65M5 en.DM00072250.pdf
STFW45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STGIPL30C60-H DM00083056.pdf
STGIPL30C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 8PHASE 38SDIP
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STGIPS10C60T-H
Hersteller: STMicroelectronics
Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW30H60DLFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STGWA15H120F2 en.DM00109377.pdf
STGWA15H120F2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
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STGWA25H120DF2 en.DM00066775.pdf
STGWA25H120DF2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 372 Stücke:
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STGWA25H120F2 en.DM00109190.pdf
STGWA25H120F2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STI18N65M2 en.DM00132456.pdf
STI18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
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STI40N65M2 en.DM00159990.pdf
STI40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STP100N8F6 en.DM00131264.pdf
STP100N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
auf Bestellung 18187 Stücke:
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5+4.3 EUR
50+2.08 EUR
100+1.87 EUR
500+1.49 EUR
1000+1.37 EUR
2000+1.26 EUR
5000+1.15 EUR
10000+1.09 EUR
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STP13N65M2 en.DM00133031.pdf
STP13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
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STP160N4LF6 en.DM00114754.pdf
STP160N4LF6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP18N65M2 en.DM00132456.pdf
STP18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 73 Stücke:
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4+6.22 EUR
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STP265N6F6AG STP265N6F6AG.pdf
STP265N6F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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STP33N65M2 en.DM00151754.pdf
STP33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 999 Stücke:
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3+8.08 EUR
50+4.16 EUR
100+3.78 EUR
500+3.12 EUR
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STP40N65M2 en.DM00159990.pdf
STP40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STPS20SM120SFP en.DM00050163.pdf
STPS20SM120SFP
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 120V 20A TO220FPAB
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220FPAB
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STPS20SM120ST en.DM00050163.pdf
STPS20SM120ST
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A TO220
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STPS30SM120SFP en.DM00050160.pdf
STPS30SM120SFP
Hersteller: STMicroelectronics
Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 1831 Stücke:
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AnzahlPrivatkunde
6+3.53 EUR
50+1.7 EUR
100+1.52 EUR
500+1.2 EUR
1000+1.09 EUR
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STPS41H100CTY en.DM00024413.pdf
STPS41H100CTY
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPSC20H065CTY en.DM00123409.pdf
STPSC20H065CTY
Hersteller: STMicroelectronics
Description: DIODE ARRAY SIC 650V 10A TO-220
Produkt ist nicht verfügbar
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STTH15S12D en.DM00124752.pdf
STTH15S12D
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 33251 Stücke:
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5+4.5 EUR
50+2.19 EUR
100+1.96 EUR
500+1.57 EUR
1000+1.44 EUR
2000+1.33 EUR
5000+1.23 EUR
10000+1.15 EUR
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STTH15S12W en.DM00124752.pdf
STTH15S12W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 15A DO247
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-247
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
Produkt ist nicht verfügbar
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STTH30S12W en.DM00124835.pdf
STTH30S12W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Produkt ist nicht verfügbar
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STTH31AC06SWL en.DM00135050.pdf
STTH31AC06SWL
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A TO247
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 155 Stücke:
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4+6.64 EUR
10+5.96 EUR
100+4.88 EUR
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STTH60AC06CWL en.DM00088638.pdf
STTH60AC06CWL
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1 Stücke:
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STTH75S12W en.DM00124839.pdf
STTH75S12W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1662 Stücke:
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2+10.89 EUR
30+6.14 EUR
120+5.09 EUR
510+4.33 EUR
1020+4.05 EUR
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STTH8S12D en.DM00124704.pdf
STTH8S12D
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 225 Stücke:
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8+2.95 EUR
50+1.39 EUR
100+1.25 EUR
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STU13N65M2 en.DM00133031.pdf
STU13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
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STW28N65M2 en.DM00150353.pdf
STW28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.59 EUR
30+5.36 EUR
120+4.41 EUR
510+3.74 EUR
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STW40N65M2 en.DM00158279.pdf
STW40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STW56N60M2 en.DM00149704.pdf
STW56N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.9 EUR
30+11.14 EUR
120+9.44 EUR
510+8.19 EUR
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STW56N60M2-4 en.DM00127606.pdf
STW56N60M2-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.8 EUR
30+11.08 EUR
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STW56N65M2 en.DM00151747.pdf
STW56N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.65 EUR
30+11.61 EUR
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LDFMPUR en.DM00063302.pdf
LDFMPUR
Hersteller: STMicroelectronics
Description: IC REG LIN POS ADJ 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 26376 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
21+1.05 EUR
25+0.94 EUR
100+0.82 EUR
250+0.76 EUR
500+0.74 EUR
1000+0.7 EUR
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LDFMPVR en.DM00063302.pdf
LDFMPVR
Hersteller: STMicroelectronics
Description: IC REG LIN POS ADJ 500MA 6-DFN
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.3V @ 500mA
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 12V
Supplier Device Package: 6-DFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 800 µA
Output Configuration: Positive
Produkt ist nicht verfügbar
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STM32746G-EVAL2 en.DM00172912.pdf
STM32746G-EVAL2
Hersteller: STMicroelectronics
Description: STM32 F7 EVAL BRD
Utilized IC / Part: STM32 F7
Core Processor: ARM® Cortex®-M7
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STM32756G-EVAL2 en.DM00172858.pdf
STM32756G-EVAL2
Hersteller: STMicroelectronics
Description: STM32 F7 EVAL BRD
Part Status: Not For New Designs
Utilized IC / Part: STM32 F7
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M7
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1036.79 EUR
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M95M02-DWMN3TP/K en.DM00132783.pdf
M95M02-DWMN3TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 256K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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2500+6.43 EUR
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M95M02-DWMN3TP/K en.DM00132783.pdf
M95M02-DWMN3TP/K
Hersteller: STMicroelectronics
Description: IC EEPROM 2MBIT SPI 10MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 256K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 12895 Stücke:
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3+9.21 EUR
10+8.19 EUR
25+7.81 EUR
50+7.53 EUR
100+7.27 EUR
250+6.93 EUR
500+6.69 EUR
1000+6.45 EUR
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LF247DT en.CD00000452.pdf
LF247DT
Hersteller: STMicroelectronics
Description: IC OPAMP JFET 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 44 V
Voltage - Supply Span (Min): 44 V
Current - Output / Channel: 40 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 3 mV
Current - Input Bias: 20 pA
Gain Bandwidth Product: 4 MHz
Slew Rate: 16V/µs
Current - Supply: 1.4mA (x4 Channels)
Operating Temperature: -40°C ~ 105°C
Amplifier Type: J-FET
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 14448 Stücke:
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8+2.62 EUR
11+1.92 EUR
25+1.74 EUR
100+1.54 EUR
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500+1.39 EUR
1000+1.34 EUR
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LM124DT en.CD00001046.pdf
LM124DT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -55°C ~ 125°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 1486 Stücke:
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7+3.37 EUR
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25+2.25 EUR
100+2 EUR
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500+1.82 EUR
1000+1.76 EUR
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LM201ADT en.CD00000871.pdf
LM201ADT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 44 V
Voltage - Supply Span (Min): 10 V
Current - Output / Channel: 30 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 700 µV
Current - Input Bias: 25 nA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.5V/µs
Current - Supply: 1.8mA
Operating Temperature: -40°C ~ 105°C
auf Bestellung 4205 Stücke:
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9+2.48 EUR
12+1.81 EUR
25+1.63 EUR
100+1.45 EUR
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500+1.31 EUR
1000+1.29 EUR
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LM239APT en.CD00000460.pdf
LM239APT
Hersteller: STMicroelectronics
Description: IC COMPARATOR 4CH 14-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, DTL, ECL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 2V ~ 32V, ±1V ~ 16V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 2mV @ 30V
Current - Input Bias (Max): 0.1µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 433 Stücke:
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24+0.88 EUR
34+0.62 EUR
38+0.56 EUR
100+0.49 EUR
250+0.45 EUR
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ST8034HNQR en.DM00082475.pdf
ST8034HNQR
Hersteller: STMicroelectronics
Description: IC INTERFACE SPECIALIZED 24QFN
Supplier Device Package: 24-QFN (4x4)
Applications: Smart Card
Voltage - Supply: 3V, 5V
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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6+3.62 EUR
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TS272AIDT en.CD00000495.pdf
TS272AIDT
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x2 Channels)
Slew Rate: 5.5V/µs
Gain Bandwidth Product: 3.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Produkt ist nicht verfügbar
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TS272CDT en.CD00000495.pdf
TS272CDT
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 1.1 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.5 MHz
Slew Rate: 5.5V/µs
Current - Supply: 1mA (x2 Channels)
Operating Temperature: 0°C ~ 70°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1791 Stücke:
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14+1.57 EUR
19+1.11 EUR
25+1 EUR
100+0.88 EUR
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1000+0.75 EUR
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TS274AIDT en.CD00000496.pdf
TS274AIDT
Hersteller: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 45 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 900 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.5 MHz
Slew Rate: 5.5V/µs
Current - Supply: 1mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1123 Stücke:
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11+2.01 EUR
15+1.46 EUR
25+1.32 EUR
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500+1.05 EUR
1000+1.02 EUR
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TS3702IPT en.CD00000882.pdf
TS3702IPT
Hersteller: STMicroelectronics
Description: IC COMPARATOR 2 GEN PUR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V, ±1.35V ~ 8V
Supplier Device Package: 8-TSSOP
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 5mV @ 10V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 20mA
CMRR, PSRR (Typ): 82dB CMRR
Part Status: Active
auf Bestellung 5990 Stücke:
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15+1.46 EUR
21+1.04 EUR
25+0.94 EUR
100+0.82 EUR
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500+0.74 EUR
1000+0.7 EUR
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TS924AIDT en.CD00001161.pdf
TS924AIDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3898 Stücke:
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4+6.01 EUR
10+4.51 EUR
25+4.14 EUR
100+3.72 EUR
250+3.52 EUR
500+3.47 EUR
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TS931BILT en.CD00001973.pdf
TS931BILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Voltage - Supply Span (Max): 10 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 5 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SOT-23-5
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 100 kHz
Slew Rate: 0.05V/µs
Current - Supply: 20µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 13483 Stücke:
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10+2.12 EUR
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TS932IDT en.CD00001973.pdf
TS932IDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Current - Supply: 20µA (x2 Channels)
Slew Rate: 0.05V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 10 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 5 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 10 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6129 Stücke:
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6+3.92 EUR
10+2.9 EUR
25+2.64 EUR
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500+2.15 EUR
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TS934IDT en.CD00001973.pdf
TS934IDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 10 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 5 mA
Number of Circuits: 4
Part Status: Active
Supplier Device Package: 14-SO
Voltage - Input Offset: 10 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 100 kHz
Slew Rate: 0.05V/µs
Current - Supply: 20µA (x4 Channels)
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Standard (General Purpose)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
auf Bestellung 1339 Stücke:
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TS954IDT en.CD00001338.pdf
TS954IDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 950µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 35 nA
Voltage - Input Offset: 6 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 10 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10751 Stücke:
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AnzahlPrivatkunde
5+4.57 EUR
10+3.4 EUR
25+3.11 EUR
100+2.78 EUR
250+2.63 EUR
500+2.57 EUR
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EFL700PMB en.CD00270103.pdf
EFL700PMB
Hersteller: STMicroelectronics
Description: POWER MGMT BOARD EFL700A39
Produkt ist nicht verfügbar
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