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STPTIC-47F1M6 STPTIC-47F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-56F1M6 STPTIC-56F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Cut Tape (CT)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-56F1M6 STPTIC-56F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-68F1M6 STPTIC-68F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-82F1M6 STPTIC-82F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STR1P2UH7 STR1P2UH7 STMicroelectronics STR1P2UH7_Jun2015_DS.pdf Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Produkt ist nicht verfügbar
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STR2P3LLH6 STR2P3LLH6 STMicroelectronics en.DM00084050.pdf Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 12284 Stücke:
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17+1.07 EUR
27+0.67 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
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STR2P3LLH6 STR2P3LLH6 STMicroelectronics en.DM00084050.pdf Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 12000 Stücke:
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3000+0.25 EUR
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STT4P3LLH6 STT4P3LLH6 STMicroelectronics en.DM00084060.pdf Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 17419 Stücke:
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22+0.8 EUR
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STT4P3LLH6 STT4P3LLH6 STMicroelectronics en.DM00084060.pdf Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 15000 Stücke:
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9000+0.27 EUR
15000+0.26 EUR
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TLVH431LICT TLVH431LICT STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
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59+0.3 EUR
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250+0.21 EUR
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TLVH431LICT TLVH431LICT STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
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TLVH431LIL3T TLVH431LIL3T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 290559 Stücke:
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61+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
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TLVH431LIL3T TLVH431LIL3T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 288000 Stücke:
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3000+0.2 EUR
6000+0.19 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000
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TLVH431LIL5T TLVH431LIL5T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
Produkt ist nicht verfügbar
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TLVH431LIL5T TLVH431LIL5T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
Produkt ist nicht verfügbar
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TS4061BICT-1.225 TS4061BICT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar
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TS4061BICT-1.225 TS4061BICT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar
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TS4061BICT-1.25 TS4061BICT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 10505 Stücke:
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18+1.02 EUR
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100+0.81 EUR
250+0.75 EUR
500+0.72 EUR
1000+0.69 EUR
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TS4061BICT-1.25 TS4061BICT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 9000 Stücke:
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3000+0.66 EUR
6000+0.65 EUR
9000+0.64 EUR
Mindestbestellmenge: 3000
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TS4061BILT-1.25 TS4061BILT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 5498 Stücke:
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250+0.73 EUR
500+0.7 EUR
1000+0.68 EUR
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TS4061BILT-1.25 TS4061BILT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 3000 Stücke:
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3000+0.64 EUR
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FERD30SM100ST FERD30SM100ST STMicroelectronics en.DM00155256.pdf Description: DIODE FERD 100V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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LF50CV-DG LF50CV-DG STMicroelectronics en.CD00000546.pdf Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
PSRR: 76dB ~ 60dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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STF12N65M2 STF12N65M2 STMicroelectronics en.DM00152663.pdf Description: MOSFET N-CH 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
auf Bestellung 257 Stücke:
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5+4 EUR
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STF13N65M2 STF13N65M2 STMicroelectronics en.DM00133025.pdf Description: MOSFET N-CH 650V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 979 Stücke:
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50+2.02 EUR
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STF18N65M2 STF18N65M2 STMicroelectronics en.DM00132600.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 2912 Stücke:
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4+4.93 EUR
50+2.47 EUR
100+2.23 EUR
500+1.81 EUR
1000+1.68 EUR
2000+1.56 EUR
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STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
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STF33N65M2 STF33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 990 Stücke:
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3+6.76 EUR
50+3.48 EUR
100+3.16 EUR
500+2.6 EUR
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STF40N65M2 STF40N65M2 STMicroelectronics en.DM00158277.pdf Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STFW2N105K5 STFW2N105K5 STMicroelectronics en.DM00115969.pdf Description: MOSFET N-CH 1050V 2A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 491 Stücke:
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4+4.79 EUR
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120+2.1 EUR
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STFW40N60M2 STFW40N60M2 STMicroelectronics en.DM00116766.pdf Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 254 Stücke:
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2+10.31 EUR
30+5.88 EUR
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STFW45N65M5 STFW45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STGIPL30C60-H STGIPL30C60-H STMicroelectronics DM00083056.pdf Description: MOD IPM SLLIMM 8PHASE 38SDIP
auf Bestellung 105 Stücke:
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STGIPS10C60T-H STGIPS10C60T-H STMicroelectronics en.DM00102031.pdf Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW30H60DLFB STGW30H60DLFB STMicroelectronics Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGWA15H120F2 STGWA15H120F2 STMicroelectronics en.DM00109377.pdf Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
Produkt ist nicht verfügbar
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STGWA25H120DF2 STGWA25H120DF2 STMicroelectronics en.DM00066775.pdf Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.73 EUR
30+5.55 EUR
120+4.63 EUR
Mindestbestellmenge: 2
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STGWA25H120F2 STGWA25H120F2 STMicroelectronics en.DM00109190.pdf Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STI18N65M2 STI18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
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STI40N65M2 STI40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STP100N8F6 STP100N8F6 STMicroelectronics en.DM00131264.pdf Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
auf Bestellung 21349 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
50+1.64 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.08 EUR
2000+1 EUR
5000+0.92 EUR
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STP13N65M2 STP13N65M2 STMicroelectronics en.DM00133031.pdf Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
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STP160N4LF6 STP160N4LF6 STMicroelectronics en.DM00114754.pdf Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Produkt ist nicht verfügbar
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STP18N65M2 STP18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.88 EUR
50+2.44 EUR
100+2.21 EUR
500+1.79 EUR
Mindestbestellmenge: 4
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STP265N6F6AG STP265N6F6AG STMicroelectronics STP265N6F6AG.pdf Description: MOSFET N-CH 60V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STP33N65M2 STP33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.79 EUR
50+3.5 EUR
100+3.18 EUR
500+2.62 EUR
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STP40N65M2 STP40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STPS20SM120SFP STPS20SM120SFP STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
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STPS20SM120ST STPS20SM120ST STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
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STPS30SM120SFP STPS30SM120SFP STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
50+1.43 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
Mindestbestellmenge: 6
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STPS41H100CTY STPS41H100CTY STMicroelectronics en.DM00024413.pdf Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPSC20H065CTY STPSC20H065CTY STMicroelectronics en.DM00123409.pdf Description: DIODE SCHOTTKY SIC 650V TO220AB
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
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STTH15S12D STTH15S12D STMicroelectronics en.DM00124752.pdf Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 33251 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
50+1.84 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.21 EUR
2000+1.12 EUR
5000+1.03 EUR
10000+0.97 EUR
Mindestbestellmenge: 5
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STTH15S12W STTH15S12W STMicroelectronics en.DM00124752.pdf Description: DIODE STANDARD 1200V 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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STTH30S12W STTH30S12W STMicroelectronics en.DM00124835.pdf Description: DIODE STANDARD 1200V 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Produkt ist nicht verfügbar
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STTH31AC06SWL STTH31AC06SWL STMicroelectronics en.DM00135050.pdf Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.58 EUR
10+5.01 EUR
100+4.1 EUR
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STTH60AC06CWL STTH60AC06CWL STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1 Stücke:
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STTH75S12W STTH75S12W STMicroelectronics en.DM00124839.pdf Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1662 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.15 EUR
30+5.16 EUR
120+4.28 EUR
510+3.64 EUR
1020+3.4 EUR
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STTH8S12D STTH8S12D STMicroelectronics en.DM00124704.pdf Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
50+0.73 EUR
100+0.71 EUR
500+0.67 EUR
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STPTIC-47F1M6 STPTIC.pdf
STPTIC-47F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-56F1M6 STPTIC.pdf
STPTIC-56F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Cut Tape (CT)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-56F1M6 STPTIC.pdf
STPTIC-56F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-68F1M6 STPTIC.pdf
STPTIC-68F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STPTIC-82F1M6 STPTIC.pdf
STPTIC-82F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 6-UQFN (1.6x1.2)
Produkt ist nicht verfügbar
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STR1P2UH7 STR1P2UH7_Jun2015_DS.pdf
STR1P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Produkt ist nicht verfügbar
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STR2P3LLH6 en.DM00084050.pdf
STR2P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 12284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
27+0.67 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
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STR2P3LLH6 en.DM00084050.pdf
STR2P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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STT4P3LLH6 en.DM00084060.pdf
STT4P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 17419 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
22+0.8 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14
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STT4P3LLH6 en.DM00084060.pdf
STT4P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
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TLVH431LICT en.DM00057412.pdf
TLVH431LICT
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
59+0.3 EUR
66+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 40
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TLVH431LICT en.DM00057412.pdf
TLVH431LICT
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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TLVH431LIL3T en.DM00057412.pdf
TLVH431LIL3T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 290559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
54+0.33 EUR
61+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 38
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TLVH431LIL3T en.DM00057412.pdf
TLVH431LIL3T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 288000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.19 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000
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TLVH431LIL5T en.DM00057412.pdf
TLVH431LIL5T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Packaging: Cut Tape (CT)
Tolerance: ±1.5%
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
Produkt ist nicht verfügbar
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TLVH431LIL5T en.DM00057412.pdf
TLVH431LIL5T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Packaging: Tape & Reel (TR)
Tolerance: ±1.5%
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
Produkt ist nicht verfügbar
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TS4061BICT-1.225 en.DM00114435.pdf
TS4061BICT-1.225
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar
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TS4061BICT-1.225 en.DM00114435.pdf
TS4061BICT-1.225
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar
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TS4061BICT-1.25 en.DM00114435.pdf
TS4061BICT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 10505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
18+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.75 EUR
500+0.72 EUR
1000+0.69 EUR
Mindestbestellmenge: 13
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TS4061BICT-1.25 en.DM00114435.pdf
TS4061BICT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
6000+0.65 EUR
9000+0.64 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TS4061BILT-1.25 en.DM00114435.pdf
TS4061BILT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 5498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
18+0.99 EUR
25+0.89 EUR
100+0.79 EUR
250+0.73 EUR
500+0.7 EUR
1000+0.68 EUR
Mindestbestellmenge: 13
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TS4061BILT-1.25 en.DM00114435.pdf
TS4061BILT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.64 EUR
Mindestbestellmenge: 3000
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FERD30SM100ST en.DM00155256.pdf
FERD30SM100ST
Hersteller: STMicroelectronics
Description: DIODE FERD 100V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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LF50CV-DG en.CD00000546.pdf
LF50CV-DG
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
PSRR: 76dB ~ 60dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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STF12N65M2 en.DM00152663.pdf
STF12N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
50+1.96 EUR
100+1.76 EUR
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STF13N65M2 en.DM00133025.pdf
STF13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.12 EUR
50+2.02 EUR
100+1.81 EUR
500+1.46 EUR
Mindestbestellmenge: 5
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STF18N65M2 en.DM00132600.pdf
STF18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
50+2.47 EUR
100+2.23 EUR
500+1.81 EUR
1000+1.68 EUR
2000+1.56 EUR
Mindestbestellmenge: 4
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STF28N65M2 en.DM00150353.pdf
STF28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Produkt ist nicht verfügbar
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STF33N65M2 en.DM00151754.pdf
STF33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
50+3.48 EUR
100+3.16 EUR
500+2.6 EUR
Mindestbestellmenge: 3
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STF40N65M2 en.DM00158277.pdf
STF40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STFW2N105K5 en.DM00115969.pdf
STFW2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 491 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
30+2.59 EUR
120+2.1 EUR
Mindestbestellmenge: 4
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STFW40N60M2 en.DM00116766.pdf
STFW40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.31 EUR
30+5.88 EUR
120+4.91 EUR
Mindestbestellmenge: 2
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STFW45N65M5 en.DM00072250.pdf
STFW45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
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STGIPL30C60-H DM00083056.pdf
STGIPL30C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 8PHASE 38SDIP
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
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STGIPS10C60T-H en.DM00102031.pdf
STGIPS10C60T-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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STGW30H60DLFB
STGW30H60DLFB
Hersteller: STMicroelectronics
Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
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STGWA15H120F2 en.DM00109377.pdf
STGWA15H120F2
Hersteller: STMicroelectronics
Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
Produkt ist nicht verfügbar
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STGWA25H120DF2 en.DM00066775.pdf
STGWA25H120DF2
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.73 EUR
30+5.55 EUR
120+4.63 EUR
Mindestbestellmenge: 2
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STGWA25H120F2 en.DM00109190.pdf
STGWA25H120F2
Hersteller: STMicroelectronics
Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STI18N65M2 en.DM00132456.pdf
STI18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
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STI40N65M2 en.DM00159990.pdf
STI40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STP100N8F6 en.DM00131264.pdf
STP100N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
auf Bestellung 21349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
50+1.64 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.08 EUR
2000+1 EUR
5000+0.92 EUR
Mindestbestellmenge: 6
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STP13N65M2 en.DM00133031.pdf
STP13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
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STP160N4LF6 en.DM00114754.pdf
STP160N4LF6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Produkt ist nicht verfügbar
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STP18N65M2 en.DM00132456.pdf
STP18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
50+2.44 EUR
100+2.21 EUR
500+1.79 EUR
Mindestbestellmenge: 4
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STP265N6F6AG STP265N6F6AG.pdf
STP265N6F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STP33N65M2 en.DM00151754.pdf
STP33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.79 EUR
50+3.5 EUR
100+3.18 EUR
500+2.62 EUR
Mindestbestellmenge: 3
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STP40N65M2 en.DM00159990.pdf
STP40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
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STPS20SM120SFP en.DM00050163.pdf
STPS20SM120SFP
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS20SM120ST en.DM00050163.pdf
STPS20SM120ST
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS30SM120SFP en.DM00050160.pdf
STPS30SM120SFP
Hersteller: STMicroelectronics
Description: DIODE SCHOTTK 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
50+1.43 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
Mindestbestellmenge: 6
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STPS41H100CTY en.DM00024413.pdf
STPS41H100CTY
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPSC20H065CTY en.DM00123409.pdf
STPSC20H065CTY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY SIC 650V TO220AB
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
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STTH15S12D en.DM00124752.pdf
STTH15S12D
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 33251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
50+1.84 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.21 EUR
2000+1.12 EUR
5000+1.03 EUR
10000+0.97 EUR
Mindestbestellmenge: 5
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STTH15S12W en.DM00124752.pdf
STTH15S12W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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STTH30S12W en.DM00124835.pdf
STTH30S12W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Produkt ist nicht verfügbar
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STTH31AC06SWL en.DM00135050.pdf
STTH31AC06SWL
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+5.01 EUR
100+4.1 EUR
Mindestbestellmenge: 4
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STTH60AC06CWL en.DM00088638.pdf
STTH60AC06CWL
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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STTH75S12W en.DM00124839.pdf
STTH75S12W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 75A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
30+5.16 EUR
120+4.28 EUR
510+3.64 EUR
1020+3.4 EUR
Mindestbestellmenge: 2
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STTH8S12D en.DM00124704.pdf
STTH8S12D
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
50+0.73 EUR
100+0.71 EUR
500+0.67 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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