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STD12N50M2 STD12N50M2 STMicroelectronics en.DM00109922.pdf Description: MOSFET N-CH 500V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 1841 Stücke:
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10+2.73 EUR
100+1.84 EUR
500+1.48 EUR
1000+1.36 EUR
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STD12N50M2 STD12N50M2 STMicroelectronics en.DM00109922.pdf Description: MOSFET N-CH 500V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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STD2N105K5 STD2N105K5 STMicroelectronics en.DM00115979.pdf Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 14568 Stücke:
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STD2N105K5 STD2N105K5 STMicroelectronics en.DM00115979.pdf Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 14500 Stücke:
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STE88N65M5 STE88N65M5 STMicroelectronics en.DM00108808.pdf Description: MOSFET N-CH 650V 88A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 494W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STF10N105K5 STF10N105K5 STMicroelectronics en.DM00134103.pdf Description: MOSFET N-CH 1050V 6A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 762 Stücke:
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50+3.77 EUR
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STF11N50M2 STF11N50M2 STMicroelectronics en.DM00107139.pdf Description: MOSFET N-CH 500V 8A TO220FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 100 V
Produkt ist nicht verfügbar
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STF24N65M2 STF24N65M2 STMicroelectronics en.DM00121015.pdf Description: MOSFET N-CH 650V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 1018 Stücke:
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4+6.83 EUR
50+3.44 EUR
100+3.11 EUR
500+2.53 EUR
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STF7N105K5 STF7N105K5 STMicroelectronics en.DM00112886.pdf Description: MOSFET N-CH 1050V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
auf Bestellung 940 Stücke:
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4+6.72 EUR
50+3.42 EUR
100+3.09 EUR
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STGD10HF60KD STGD10HF60KD STMicroelectronics en.DM00049493.pdf Description: IGBT 600V 10A DPAK
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Gate Charge: 23 nC
Test Condition: 400V, 5A, 10Ohm, 15V
Switching Energy: 45µJ (on), 105µJ (off)
Td (on/off) @ 25°C: 9.5ns/87ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3178 Stücke:
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5+4.86 EUR
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STGD10HF60KD STGD10HF60KD STMicroelectronics en.DM00049493.pdf Description: IGBT 600V 10A DPAK
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Gate Charge: 23 nC
Test Condition: 400V, 5A, 10Ohm, 15V
Switching Energy: 45µJ (on), 105µJ (off)
Td (on/off) @ 25°C: 9.5ns/87ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2500 Stücke:
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2500+1.45 EUR
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STGD19N40LZ STGD19N40LZ STMicroelectronics en.DM00082246.pdf Description: IGBT 390V 25A DPAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Gate Charge: 17 nC
Test Condition: 300V, 10A, 1kOhm, 5V
Td (on/off) @ 25°C: 650ns/13.5µs
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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STGD19N40LZ STGD19N40LZ STMicroelectronics en.DM00082246.pdf Description: IGBT 390V 25A DPAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Gate Charge: 17 nC
Test Condition: 300V, 10A, 1kOhm, 5V
Td (on/off) @ 25°C: 650ns/13.5µs
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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STH185N10F3-2 STH185N10F3-2 STMicroelectronics en.DM00133320.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH185N10F3-2 STH185N10F3-2 STMicroelectronics en.DM00133320.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STH240N10F7-6 STH240N10F7-6 STMicroelectronics en.DM00111318.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
auf Bestellung 403 Stücke:
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STH240N10F7-6 STH240N10F7-6 STMicroelectronics en.DM00111318.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Produkt ist nicht verfügbar
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STL30P3LLH6 STL30P3LLH6 STMicroelectronics stl30p3llh6.pdf Description: MOSFET P-CH 30V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 9338 Stücke:
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100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
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STL30P3LLH6 STL30P3LLH6 STMicroelectronics stl30p3llh6.pdf Description: MOSFET P-CH 30V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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3000+0.76 EUR
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STL40C30H3LL STL40C30H3LL STMicroelectronics en.DM00068911.pdf Description: MOSFET N/P-CH 30V 40A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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STL6P3LLH6 STL6P3LLH6 STMicroelectronics en.DM00064617.pdf Description: MOSFET P-CH 30V 6A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 6085 Stücke:
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7+3.17 EUR
11+2 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.95 EUR
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STL6P3LLH6 STL6P3LLH6 STMicroelectronics en.DM00064617.pdf Description: MOSFET P-CH 30V 6A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 6000 Stücke:
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3000+0.84 EUR
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STP10N105K5 STP10N105K5 STMicroelectronics en.DM00134103.pdf Description: MOSFET N-CH 1050V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 535 Stücke:
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STP12N50M2 STP12N50M2 STMicroelectronics en.DM00121831.pdf Description: MOSFET N-CH 500V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V
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STP16N50M2 STP16N50M2 STMicroelectronics en.DM00124257.pdf Description: MOSFET N-CH 500V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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STP16N65M2 STP16N65M2 STMicroelectronics en.DM00140964.pdf Description: MOSFET N-CH 650V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Produkt ist nicht verfügbar
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STP2N105K5 STP2N105K5 STMicroelectronics en.DM00115979.pdf Description: MOSFET N-CH 1050V 1.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 204 Stücke:
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STP5N105K5 STP5N105K5 STMicroelectronics en.DM00126756.pdf Description: MOSFET N-CH 1050V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 100 V
auf Bestellung 784 Stücke:
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STP7N105K5 STP7N105K5 STMicroelectronics en.DM00112876.pdf Description: MOSFET N-CH 1050V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
auf Bestellung 240 Stücke:
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4+6.5 EUR
50+3.27 EUR
100+2.96 EUR
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STPS1170AF STPS1170AF STMicroelectronics en.DM00136811.pdf Description: DIODE SCHOTTKY 170V 1A SMAFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAflat
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 170 V
auf Bestellung 2527 Stücke:
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91+0.23 EUR
100+0.21 EUR
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STPS1170AF STPS1170AF STMicroelectronics en.DM00136811.pdf Description: DIODE SCHOTTKY 170V 1A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAflat
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 170 V
Produkt ist nicht verfügbar
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STPS2170AF STPS2170AF STMicroelectronics en.DM00136813.pdf Description: DIODE SCHOTTKY 170V 2A SMAFLAT
Current - Reverse Leakage @ Vr: 2.8 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 2A
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1201 Stücke:
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STPS2170AF STPS2170AF STMicroelectronics en.DM00136813.pdf Description: DIODE SCHOTTKY 170V 2A SMAFLAT
Current - Reverse Leakage @ Vr: 2.8 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STPS30SM120ST STPS30SM120ST STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
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STPS3170AF STPS3170AF STMicroelectronics en.DM00136816.pdf Description: DIODE SCHOTTKY 170V 3A SMAFLAT
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 17393 Stücke:
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25+0.86 EUR
32+0.67 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
2000+0.27 EUR
5000+0.25 EUR
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STPS3170AF STPS3170AF STMicroelectronics en.DM00136816.pdf Description: DIODE SCHOTTKY 170V 3A SMAFLAT
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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10000+0.21 EUR
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STPS3170UF STPS3170UF STMicroelectronics en.DM00136816.pdf Description: DIODE SCHOTTKY 170V 3A SMBFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
auf Bestellung 7241 Stücke:
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500+0.4 EUR
1000+0.35 EUR
2000+0.33 EUR
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STPS3170UF STPS3170UF STMicroelectronics en.DM00136816.pdf Description: DIODE SCHOTTKY 170V 3A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
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STPS4S200B-TR STPS4S200B-TR STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5452 Stücke:
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10+2.28 EUR
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500+0.73 EUR
1000+0.65 EUR
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STPS4S200B-TR STPS4S200B-TR STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4500 Stücke:
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2500+0.58 EUR
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STPS4S200UF STPS4S200UF STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A SMBFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10716 Stücke:
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15+1.46 EUR
24+0.9 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
2000+0.37 EUR
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STPS4S200UF STPS4S200UF STMicroelectronics en.DM00136818.pdf Description: DIODE SCHOTTKY 200V 4A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10000 Stücke:
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5000+0.32 EUR
10000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
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STPS640CBY-TR STPS640CBY-TR STMicroelectronics en.DM00091810.pdf Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STPS640CBY-TR STPS640CBY-TR STMicroelectronics en.DM00091810.pdf Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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STTH16L06CTY STTH16L06CTY STMicroelectronics stth16l06c-y.pdf Description: DIODE ARRAY GP 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.11 EUR
50+2.5 EUR
100+2.25 EUR
Mindestbestellmenge: 5 Stücke
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STTH1L06UFY STTH1L06UFY STMicroelectronics en.DM00126823.pdf Description: DIODE STANDARD 600V 1A SMBFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 11472 Stücke:
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29+0.74 EUR
33+0.64 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 29 Stücke
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STTH1L06UFY STTH1L06UFY STMicroelectronics en.DM00126823.pdf Description: DIODE STANDARD 600V 1A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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STTH1R06UFY STTH1R06UFY STMicroelectronics en.DM00126948.pdf Description: DIODE STANDARD 600V 1A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
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STTH1R06UFY STTH1R06UFY STMicroelectronics en.DM00126948.pdf Description: DIODE STANDARD 600V 1A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
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STTH2L06UFY STTH2L06UFY STMicroelectronics en.DM00127067.pdf Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
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STTH2L06UFY STTH2L06UFY STMicroelectronics en.DM00127067.pdf Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
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STTH2R06UFY STTH2R06UFY STMicroelectronics en.DM00127070.pdf Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
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STTH2R06UFY STTH2R06UFY STMicroelectronics en.DM00127070.pdf Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
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STTH3L06UFY STTH3L06UFY STMicroelectronics en.DM00127081.pdf Description: DIODE STANDARD 600V 3A SMBFLAT
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 3A
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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STTH3L06UFY STTH3L06UFY STMicroelectronics en.DM00127081.pdf Description: DIODE STANDARD 600V 3A SMBFLAT
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 3A
Technology: Standard
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
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STW10N105K5 STW10N105K5 STMicroelectronics en.DM00134103.pdf Description: MOSFET N-CH 1050V 6A TO247
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW18N60M2 STW18N60M2 STMicroelectronics en.DM00086800.pdf Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 627 Stücke:
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STW7N105K5 STW7N105K5 STMicroelectronics en.DM00112876.pdf Description: MOSFET N-CH 1050V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
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T610T-8T T610T-8T STMicroelectronics en.DM00115801.pdf Description: TRIAC 800V 6A 10MA TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
auf Bestellung 489 Stücke:
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T810T-8T T810T-8T STMicroelectronics en.DM00125385.pdf Description: TRIAC SENS GATE 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
auf Bestellung 366 Stücke:
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STD12N50M2 en.DM00109922.pdf
STD12N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 1841 Stücke:
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5+4.25 EUR
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STD12N50M2 en.DM00109922.pdf
STD12N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Produkt ist nicht verfügbar
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STD2N105K5 en.DM00115979.pdf
STD2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 14568 Stücke:
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5+4.69 EUR
10+3.01 EUR
100+2.06 EUR
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STD2N105K5 en.DM00115979.pdf
STD2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
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STE88N65M5 en.DM00108808.pdf
STE88N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 88A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 494W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STF10N105K5 en.DM00134103.pdf
STF10N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 762 Stücke:
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AnzahlPrivatkunde
3+7.44 EUR
50+3.77 EUR
100+3.42 EUR
500+2.78 EUR
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STF11N50M2 en.DM00107139.pdf
STF11N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 8A TO220FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 100 V
Produkt ist nicht verfügbar
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STF24N65M2 en.DM00121015.pdf
STF24N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 1018 Stücke:
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4+6.83 EUR
50+3.44 EUR
100+3.11 EUR
500+2.53 EUR
1000+2.34 EUR
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STF7N105K5 en.DM00112886.pdf
STF7N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
auf Bestellung 940 Stücke:
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4+6.72 EUR
50+3.42 EUR
100+3.09 EUR
500+2.52 EUR
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STGD10HF60KD en.DM00049493.pdf
STGD10HF60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 10A DPAK
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Gate Charge: 23 nC
Test Condition: 400V, 5A, 10Ohm, 15V
Switching Energy: 45µJ (on), 105µJ (off)
Td (on/off) @ 25°C: 9.5ns/87ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3178 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.86 EUR
10+3.14 EUR
100+2.15 EUR
500+1.74 EUR
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STGD10HF60KD en.DM00049493.pdf
STGD10HF60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 10A DPAK
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Gate Charge: 23 nC
Test Condition: 400V, 5A, 10Ohm, 15V
Switching Energy: 45µJ (on), 105µJ (off)
Td (on/off) @ 25°C: 9.5ns/87ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.45 EUR
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STGD19N40LZ en.DM00082246.pdf
STGD19N40LZ
Hersteller: STMicroelectronics
Description: IGBT 390V 25A DPAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Gate Charge: 17 nC
Test Condition: 300V, 10A, 1kOhm, 5V
Td (on/off) @ 25°C: 650ns/13.5µs
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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STGD19N40LZ en.DM00082246.pdf
STGD19N40LZ
Hersteller: STMicroelectronics
Description: IGBT 390V 25A DPAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Gate Charge: 17 nC
Test Condition: 300V, 10A, 1kOhm, 5V
Td (on/off) @ 25°C: 650ns/13.5µs
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A
Input Type: Logic
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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STH185N10F3-2 en.DM00133320.pdf
STH185N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH185N10F3-2 en.DM00133320.pdf
STH185N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STH240N10F7-6 en.DM00111318.pdf
STH240N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.17 EUR
10+6.07 EUR
100+4.31 EUR
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STH240N10F7-6 en.DM00111318.pdf
STH240N10F7-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Produkt ist nicht verfügbar
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STL30P3LLH6 stl30p3llh6.pdf
STL30P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 9338 Stücke:
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AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
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STL30P3LLH6 stl30p3llh6.pdf
STL30P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.76 EUR
6000+0.71 EUR
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STL40C30H3LL en.DM00068911.pdf
STL40C30H3LL
Hersteller: STMicroelectronics
Description: MOSFET N/P-CH 30V 40A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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STL6P3LLH6 en.DM00064617.pdf
STL6P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 6A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 6085 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.17 EUR
11+2 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.95 EUR
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STL6P3LLH6 en.DM00064617.pdf
STL6P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 6A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.9W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.84 EUR
6000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
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STP10N105K5 en.DM00134103.pdf
STP10N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
auf Bestellung 535 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.59 EUR
50+4.41 EUR
100+4.01 EUR
500+3.3 EUR
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STP12N50M2 en.DM00121831.pdf
STP12N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 100 V
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
50+2.09 EUR
100+1.88 EUR
500+1.5 EUR
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STP16N50M2 en.DM00124257.pdf
STP16N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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STP16N65M2 en.DM00140964.pdf
STP16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Produkt ist nicht verfügbar
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STP2N105K5 en.DM00115979.pdf
STP2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
50+2.09 EUR
100+1.99 EUR
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STP5N105K5 en.DM00126756.pdf
STP5N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 100 V
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.97 EUR
50+3 EUR
100+2.71 EUR
500+2.2 EUR
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STP7N105K5 en.DM00112876.pdf
STP7N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.5 EUR
50+3.27 EUR
100+2.96 EUR
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STPS1170AF en.DM00136811.pdf
STPS1170AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 1A SMAFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAflat
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 170 V
auf Bestellung 2527 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
100+0.21 EUR
Mindestbestellmenge: 91 Stücke
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STPS1170AF en.DM00136811.pdf
STPS1170AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 1A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAflat
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 170 V
Produkt ist nicht verfügbar
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STPS2170AF en.DM00136813.pdf
STPS2170AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 2A SMAFLAT
Current - Reverse Leakage @ Vr: 2.8 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 2A
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1201 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.68 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.3 EUR
Mindestbestellmenge: 19 Stücke
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STPS2170AF en.DM00136813.pdf
STPS2170AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 2A SMAFLAT
Current - Reverse Leakage @ Vr: 2.8 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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STPS30SM120ST en.DM00050160.pdf
STPS30SM120ST
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS3170AF en.DM00136816.pdf
STPS3170AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 3A SMAFLAT
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 17393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
32+0.67 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
2000+0.27 EUR
5000+0.25 EUR
Mindestbestellmenge: 25 Stücke
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STPS3170AF en.DM00136816.pdf
STPS3170AF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 3A SMAFLAT
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 170 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMAflat
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.21 EUR
Mindestbestellmenge: 10000 Stücke
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STPS3170UF en.DM00136816.pdf
STPS3170UF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 3A SMBFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
auf Bestellung 7241 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
28+0.77 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.35 EUR
2000+0.33 EUR
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STPS3170UF en.DM00136816.pdf
STPS3170UF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 170V 3A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 170 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.27 EUR
Mindestbestellmenge: 5000 Stücke
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STPS4S200B-TR en.DM00136818.pdf
STPS4S200B-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5452 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.65 EUR
Mindestbestellmenge: 10 Stücke
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STPS4S200B-TR en.DM00136818.pdf
STPS4S200B-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.58 EUR
Mindestbestellmenge: 2500 Stücke
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STPS4S200UF en.DM00136818.pdf
STPS4S200UF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMBFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10716 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
24+0.9 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
2000+0.37 EUR
Mindestbestellmenge: 15 Stücke
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STPS4S200UF en.DM00136818.pdf
STPS4S200UF
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.32 EUR
10000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
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STPS640CBY-TR en.DM00091810.pdf
STPS640CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPS640CBY-TR en.DM00091810.pdf
STPS640CBY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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STTH16L06CTY stth16l06c-y.pdf
STTH16L06CTY
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.11 EUR
50+2.5 EUR
100+2.25 EUR
Mindestbestellmenge: 5 Stücke
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STTH1L06UFY en.DM00126823.pdf
STTH1L06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMBFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 11472 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
33+0.64 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 29 Stücke
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STTH1L06UFY en.DM00126823.pdf
STTH1L06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.31 EUR
Mindestbestellmenge: 5000 Stücke
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STTH1R06UFY en.DM00126948.pdf
STTH1R06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
20+1.09 EUR
Mindestbestellmenge: 12 Stücke
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STTH1R06UFY en.DM00126948.pdf
STTH1R06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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STTH2L06UFY en.DM00127067.pdf
STTH2L06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 9784 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 11 Stücke
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STTH2L06UFY en.DM00127067.pdf
STTH2L06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.45 EUR
Mindestbestellmenge: 5000 Stücke
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STTH2R06UFY en.DM00127070.pdf
STTH2R06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
19+1.11 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.54 EUR
2000+0.51 EUR
Mindestbestellmenge: 14 Stücke
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STTH2R06UFY en.DM00127070.pdf
STTH2R06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 2A SMBFLAT
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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STTH3L06UFY en.DM00127081.pdf
STTH3L06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 3A SMBFLAT
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Current - Average Rectified (Io): 3A
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 10014 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.4 EUR
20+1.07 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.55 EUR
2000+0.51 EUR
Mindestbestellmenge: 15 Stücke
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STTH3L06UFY en.DM00127081.pdf
STTH3L06UFY
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 3A SMBFLAT
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 3A
Technology: Standard
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SMBflat
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.42 EUR
Mindestbestellmenge: 5000 Stücke
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STW10N105K5 en.DM00134103.pdf
STW10N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO247
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW18N60M2 en.DM00086800.pdf
STW18N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.2 EUR
30+3.95 EUR
120+3.22 EUR
510+2.69 EUR
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STW7N105K5 en.DM00112876.pdf
STW7N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
auf Bestellung 347 Stücke:
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AnzahlPrivatkunde
3+7.16 EUR
30+3.93 EUR
120+3.22 EUR
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T610T-8T en.DM00115801.pdf
T610T-8T
Hersteller: STMicroelectronics
Description: TRIAC 800V 6A 10MA TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
auf Bestellung 489 Stücke:
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9+2.56 EUR
10+2.27 EUR
100+1.77 EUR
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T810T-8T en.DM00125385.pdf
T810T-8T
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
50+1.33 EUR
100+1.19 EUR
Mindestbestellmenge: 8 Stücke
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