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1N5391G A0G 1N5391G A0G Taiwan Semiconductor Corporation 1N5391G%20SERIES_F2105.pdf Description: DIODE GEN PURP 50V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
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1N5391GHA0G 1N5391GHA0G Taiwan Semiconductor Corporation 1N5391G%20SERIES_F2105.pdf Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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1N5391G B0G 1N5391G B0G Taiwan Semiconductor Corporation 1N5391G%20SERIES_F2105.pdf Description: DIODE GEN PURP 50V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5391GHB0G 1N5391GHB0G Taiwan Semiconductor Corporation 1N5391G%20SERIES_F2105.pdf Description: DIODE GEN PURP 50V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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BZD27C43PHRQG BZD27C43PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHRVG BZD27C43PHRVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHRUG BZD27C43PHRUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHRHG BZD27C43PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHM2G BZD27C43PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHMHG BZD27C43PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHMQG BZD27C43PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHMTG BZD27C43PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
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BZD27C43PHRTG BZD27C43PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
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BZD27C43PHRFG BZD27C43PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
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BZT52C6V8S RRG BZT52C6V8S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 6.8V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
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BZT52C6V8S RRG BZT52C6V8S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 6.8V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
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87+0.24 EUR
140+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
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BZY55B5V6 RYG BZY55B5V6 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 5.6V 500MW 0805
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SRF1030 C0G SRF1030 C0G Taiwan Semiconductor Corporation SRF1020%20SERIES_L2105.pdf Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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SRF1030HC0G SRF1030HC0G Taiwan Semiconductor Corporation SRF1020%20SERIES_L2105.pdf Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
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BZY55C11 RYG BZY55C11 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 11V 500MW 0805
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BZT55C11 L1G BZT55C11 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 11V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SMDJ15A R7G SMDJ15A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15AHR7G SMDJ15AHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ15A V6G SMDJ15A V6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 15V 24.4V DO214AB
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SMDJ15A V7G SMDJ15A V7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15A M6G SMDJ15A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ15AHM6G SMDJ15AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB220A M4G P6SMB220A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 185V 328V DO214AA
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P6SMB220AHM4G P6SMB220AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 185V 328V DO214AA
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P6SMB220A R5G P6SMB220A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB220AHR5G P6SMB220AHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_N1701.pdf Description: TVS DIODE 185V 328V DO214AA
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TSM60NB190CZ C0G TSM60NB190CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
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3+7.83 EUR
50+6.2 EUR
100+5.32 EUR
500+4.72 EUR
1000+4.05 EUR
2000+3.81 EUR
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TSM60NB190CI C0G TSM60NB190CI C0G Taiwan Semiconductor Corporation TSM60NB190_D1608.pdf Description: MOSFET N-CH 600V 18A ITO220AB
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TSM60NB190CM2 RNG TSM60NB190CM2 RNG Taiwan Semiconductor Corporation TSM60NB190CM2_A1608.pdf Description: MOSFET N-CH 600V 18A TO263
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TSM60NB190CM2 RNG TSM60NB190CM2 RNG Taiwan Semiconductor Corporation TSM60NB190CM2_A1608.pdf Description: MOSFET N-CH 600V 18A TO263
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TSM500P02DCQ RFG TSM500P02DCQ RFG Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 620mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TSM500P02DCQ RFG TSM500P02DCQ RFG Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 620mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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TSM5NC50CP ROG TSM5NC50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TSM5NC50CP ROG TSM5NC50CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
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TSM5NC50CZ C0G TSM5NC50CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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10+2.21 EUR
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500+1.46 EUR
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TSM500N03CP ROG TSM500N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 12.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SMF43A RVG SMF43A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL
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SMF43A RVG SMF43A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL
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SA30CA R0G SA30CA R0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 30VWM 64.3VC DO204AC
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S4J R7G S4J R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
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S4J R7G S4J R7G Taiwan Semiconductor Corporation S4A%20SERIES_J1903.pdf Description: DIODE GEN PURP 600V 4A DO214AB
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SMAJ9.0CAHR3G SMAJ9.0CAHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ9.0CAHR3G SMAJ9.0CAHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ9.0CA M2G SMAJ9.0CA M2G Taiwan Semiconductor Corporation SMAJ%20SERIES_S1901.pdf Description: TVS DIODE 9V 15.4V DO214AC
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1PGSMC5354HR7G Taiwan Semiconductor Corporation 1PGSMC5348%20SERIES_B1805.pdf Description: DIODE ZENER 17V 5W DO214AB
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1PGSMC5354 R7G Taiwan Semiconductor Corporation 1PGSMC5348%20SERIES_B1805.pdf Description: DIODE ZENER 17V 5W DO214AB
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TS19450CS RLG TS19450CS RLG Taiwan Semiconductor Corporation Description: IC LED DRVR OFFL PWM 8SOP
Voltage - Supply (Max): 450V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 8-SOP
Topology: Step-Down (Buck)
Internal Switch(s): No
Applications: Backlight, Lighting, Signage
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TS19450CS RLG TS19450CS RLG Taiwan Semiconductor Corporation Description: IC LED DRVR OFFL PWM 8SOP
Voltage - Supply (Max): 450V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 8-SOP
Topology: Step-Down (Buck)
Internal Switch(s): No
Applications: Backlight, Lighting, Signage
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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100+3.01 EUR
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TS19603CS RLG TS19603CS RLG Taiwan Semiconductor Corporation Description: IC LED DRIVER LINEAR 400MA 8SOP
Voltage - Supply (Max): 50V
Voltage - Supply (Min): 5V
Supplier Device Package: 8-SOP-EP
Internal Switch(s): Yes
Current - Output / Channel: 400mA
Applications: Backlight
Operating Temperature: -20°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 12V
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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P4KE130CA R0G P4KE130CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 111V 179V DO204AL
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P4KE130CAHR0G P4KE130CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 111V 179V DO204AL
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P6KE130CA R0G P6KE130CA R0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 111VWM 179VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE130CAHR0G P6KE130CAHR0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
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TSD30H120CW MNG TSD30H120CW MNG Taiwan Semiconductor Corporation TSD30H100CW%20SERIES_C15.pdf Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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TSD30H120CW MNG TSD30H120CW MNG Taiwan Semiconductor Corporation TSD30H100CW%20SERIES_C15.pdf Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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1N5391G A0G 1N5391G%20SERIES_F2105.pdf
1N5391G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
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1N5391GHA0G 1N5391G%20SERIES_F2105.pdf
1N5391GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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1N5391G B0G 1N5391G%20SERIES_F2105.pdf
1N5391G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
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1N5391GHB0G 1N5391G%20SERIES_F2105.pdf
1N5391GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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BZD27C43PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHRVG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar
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BZD27C43PHRUG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C43PHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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BZD27C43PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27C43PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZD27C43PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C43PHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.97%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT52C6V8S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C6V8S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.074 EUR
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BZT52C6V8S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C6V8S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
auf Bestellung 5363 Stücke:
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AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
140+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
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BZY55B5V6 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B5V6 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW 0805
Produkt ist nicht verfügbar
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SRF1030 C0G SRF1020%20SERIES_L2105.pdf
SRF1030 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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SRF1030HC0G SRF1020%20SERIES_L2105.pdf
SRF1030HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZY55C11 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C11 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZT55C11 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C11 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW MINI MELF
Current - Reverse Leakage @ Vr: 100 nA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 500 mW
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMDJ15A R7G SMDJ%20SERIES_I2104.pdf
SMDJ15A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ15AHR7G SMDJH%20SERIES_B2104.pdf
SMDJ15AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMDJ15A V6G SMDJ%20SERIES_E1708.pdf
SMDJ15A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15V 24.4V DO214AB
Produkt ist nicht verfügbar
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SMDJ15A V7G SMDJ%20SERIES_I2104.pdf
SMDJ15A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ15A M6G SMDJ%20SERIES_I2104.pdf
SMDJ15A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SMDJ15AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ15AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB220A M4G P6SMB%20SERIES_N1701.pdf
P6SMB220A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
Produkt ist nicht verfügbar
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P6SMB220AHM4G P6SMB%20SERIES_N1701.pdf
P6SMB220AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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P6SMB220A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB220A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB220AHR5G P6SMB%20SERIES_N1701.pdf
P6SMB220AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 185V 328V DO214AA
Produkt ist nicht verfügbar
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TSM60NB190CZ C0G
TSM60NB190CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
auf Bestellung 3858 Stücke:
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AnzahlPrivatkunde
3+7.83 EUR
50+6.2 EUR
100+5.32 EUR
500+4.72 EUR
1000+4.05 EUR
2000+3.81 EUR
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TSM60NB190CI C0G TSM60NB190_D1608.pdf
TSM60NB190CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220AB
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TSM60NB190CM2 RNG TSM60NB190CM2_A1608.pdf
TSM60NB190CM2 RNG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
Produkt ist nicht verfügbar
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TSM60NB190CM2 RNG TSM60NB190CM2_A1608.pdf
TSM60NB190CM2 RNG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A TO263
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TSM500P02DCQ RFG TSM500P02D_B15.pdf
TSM500P02DCQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 620mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 72000 Stücke:
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AnzahlPrivatkunde
3000+0.35 EUR
6000+0.32 EUR
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TSM500P02DCQ RFG TSM500P02D_B15.pdf
TSM500P02DCQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Part Status: Active
Supplier Device Package: 6-TDFN (2x2)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 620mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 73288 Stücke:
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AnzahlPrivatkunde
13+1.65 EUR
21+1.04 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
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TSM5NC50CP ROG
TSM5NC50CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSM5NC50CP ROG
TSM5NC50CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
auf Bestellung 40 Stücke:
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12+1.82 EUR
15+1.49 EUR
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TSM5NC50CZ C0G
TSM5NC50CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
10+2.21 EUR
100+1.73 EUR
500+1.46 EUR
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TSM500N03CP ROG
TSM500N03CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 12.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SMF43A RVG SMF5.0A%20SERIES_B1709.pdf
SMF43A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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SMF43A RVG SMF5.0A%20SERIES_B1709.pdf
SMF43A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL
auf Bestellung 2600 Stücke:
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SA30CA R0G SA%20SERIES_L2105.pdf
SA30CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 64.3VC DO204AC
Produkt ist nicht verfügbar
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S4J R7G S4A%20SERIES_J1903.pdf
S4J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 850 Stücke
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S4J R7G S4A%20SERIES_J1903.pdf
S4J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
auf Bestellung 288 Stücke:
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SMAJ9.0CAHR3G
SMAJ9.0CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ9.0CAHR3G
SMAJ9.0CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ9.0CA M2G SMAJ%20SERIES_S1901.pdf
SMAJ9.0CA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AC
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1PGSMC5354HR7G 1PGSMC5348%20SERIES_B1805.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
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1PGSMC5354 R7G 1PGSMC5348%20SERIES_B1805.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 17V 5W DO214AB
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TS19450CS RLG
TS19450CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
Voltage - Supply (Max): 450V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 8-SOP
Topology: Step-Down (Buck)
Internal Switch(s): No
Applications: Backlight, Lighting, Signage
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TS19450CS RLG
TS19450CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL PWM 8SOP
Voltage - Supply (Max): 450V
Voltage - Supply (Min): 8V
Dimming: Analog, PWM
Supplier Device Package: 8-SOP
Topology: Step-Down (Buck)
Internal Switch(s): No
Applications: Backlight, Lighting, Signage
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 443 Stücke:
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AnzahlPrivatkunde
6+4.16 EUR
10+3.75 EUR
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100+3.01 EUR
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TS19603CS RLG
TS19603CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER LINEAR 400MA 8SOP
Voltage - Supply (Max): 50V
Voltage - Supply (Min): 5V
Supplier Device Package: 8-SOP-EP
Internal Switch(s): Yes
Current - Output / Channel: 400mA
Applications: Backlight
Operating Temperature: -20°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 12V
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P4KE130CA R0G P4KE%20SERIES_M1602.pdf
P4KE130CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
Produkt ist nicht verfügbar
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P4KE130CAHR0G P4KE%20SERIES_M1602.pdf
P4KE130CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111V 179V DO204AL
Produkt ist nicht verfügbar
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P6KE130CA R0G P6KE%20SERIES_P2203.pdf
P6KE130CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE130CAHR0G P6KE%20SERIES_O2109.pdf
P6KE130CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
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TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H120CW MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
Produkt ist nicht verfügbar
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TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
TSD30H120CW MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 30A, 12
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