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TUAS8K M3G TUAS8K M3G Taiwan Semiconductor Corporation Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1445 Stücke:
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SMBJ36CAHM4G SMBJ36CAHM4G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 36VWM 58.1VC DO214AA
Produkt ist nicht verfügbar
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SMA6J17A R3G SMA6J17A R3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 1800 Stücke:
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1800+0.68 EUR
Mindestbestellmenge: 1800
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SMA6J17A R3G SMA6J17A R3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 3218 Stücke:
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13+1.44 EUR
14+1.27 EUR
100+0.97 EUR
500+0.77 EUR
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1SMA4738 M2G 1SMA4738 M2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Produkt ist nicht verfügbar
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BAT54SW RVG BAT54SW RVG Taiwan Semiconductor Corporation BAT54W%20SERIES_D2102.pdf Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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MURF1620CT C0G MURF1620CT C0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_K2105.pdf Description: DIODE ARRAY GP 200V ITO-220AB
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MURF1620CTHC0G MURF1620CTHC0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Qualification: AEC-Q101
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1SMA4755 M2G 1SMA4755 M2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 43V 1.25W DO214AC
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BZV55B6V8 L1G BZV55B6V8 L1G Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
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RS1JLS RVG RS1JLS RVG Taiwan Semiconductor Corporation RS1JLS%20SERIES_D2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLS RVG RS1JLS RVG Taiwan Semiconductor Corporation RS1JLS%20SERIES_D2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
29+0.61 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.20 EUR
Mindestbestellmenge: 22
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SMDJ51A R7G SMDJ51A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 51V 82.4V DO214AB
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TS6K80HD3G TS6K80HD3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 800V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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TS6KL60 D3G TS6KL60 D3G Taiwan Semiconductor Corporation TS6KL60%20SERIES_C15.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBJL
auf Bestellung 869 Stücke:
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TS6K40 D3G TS6K40 D3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TS6K40HD3G TS6K40HD3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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TS6K60HD3G TS6K60HD3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SMB10J9.0CA M4G SMB10J9.0CA M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 9V 15.4V DO214AA
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SMB10J36A M4G SMB10J36A M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 36V 58.1V DO214AA
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SMB10J40A M4G SMB10J40A M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 40V 64.5V DO214AA
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SMB10J36CA M4G SMB10J36CA M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 36V 58.1V DO214AA
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SMB10J40CA M4G SMB10J40CA M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 40V 64.5V DO214AA
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TSM1NB60CP ROG TSM1NB60CP ROG Taiwan Semiconductor Corporation TSM1NB60CP_A2309.pdf Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 2500 Stücke:
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2500+0.45 EUR
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TSM1NB60CP ROG TSM1NB60CP ROG Taiwan Semiconductor Corporation TSM1NB60CP_A2309.pdf Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 5990 Stücke:
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13+1.43 EUR
18+1.03 EUR
100+0.70 EUR
500+0.56 EUR
1000+0.51 EUR
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TSM4NB60CP ROG TSM4NB60CP ROG Taiwan Semiconductor Corporation TSM4NB60_L1901.pdf Description: MOSFET N-CHANNEL 600V 4A TO252
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TSM4NB60CP ROG TSM4NB60CP ROG Taiwan Semiconductor Corporation TSM4NB60_L1901.pdf Description: MOSFET N-CHANNEL 600V 4A TO252
auf Bestellung 856 Stücke:
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BZX79B22 A0G BZX79B22 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_D1610.pdf Description: DIODE ZENER 22V 500MW DO35
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P6SMB39A R5G P6SMB39A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB39A R5G P6SMB39A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB39CA R5G P6SMB39CA R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMB39CA R5G P6SMB39CA R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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MBR3050CT C0G MBR3050CT C0G Taiwan Semiconductor Corporation MBR3035CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 50V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Produkt ist nicht verfügbar
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MBR3050CTHC0G MBR3050CTHC0G Taiwan Semiconductor Corporation MBR3035CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 50V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR3050PT C0G MBR3050PT C0G Taiwan Semiconductor Corporation MBR3035PT%20SERIES_K2103.pdf Description: DIODE ARR SCHOTT 50V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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BZW04-40 R0G BZW04-40 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
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BZW04-44 R0G BZW04-44 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 43.6VWM 70.1VC DO204AL
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TSM4953DCS RLG TSM4953DCS RLG Taiwan Semiconductor Corporation TSM4953D_D15.pdf Description: MOSFET 2P-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 20000 Stücke:
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2500+0.53 EUR
5000+0.48 EUR
12500+0.46 EUR
Mindestbestellmenge: 2500
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TSM4953DCS RLG TSM4953DCS RLG Taiwan Semiconductor Corporation TSM4953D_D15.pdf Description: MOSFET 2P-CH 30V 4.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 22547 Stücke:
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14+1.31 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
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SMAJ51AHR3G SMAJ51AHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 51VWM 82.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ51AHR3G SMAJ51AHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 51VWM 82.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS20P05G C2G TS20P05G C2G Taiwan Semiconductor Corporation TS20P01G%20SERIES_O2203.pdf Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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TS1117BCP ROG TS1117BCP ROG Taiwan Semiconductor Corporation TS1117B_H1607.pdf Description: IC REG LINEAR POS ADJ 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 90 µA
Produkt ist nicht verfügbar
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TS1117BCP50 ROG TS1117BCP50 ROG Taiwan Semiconductor Corporation TS1117B_H1607.pdf Description: IC REG LINEAR 5V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 90 µA
Produkt ist nicht verfügbar
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ESGLW RVG ESGLW RVG Taiwan Semiconductor Corporation ESDLW%20SERIES_A1708.pdf Description: DIODE, SUPER FAST
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
Mindestbestellmenge: 3000
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ESGLW RVG ESGLW RVG Taiwan Semiconductor Corporation ESDLW%20SERIES_A1708.pdf Description: DIODE, SUPER FAST
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ESGLWHRVG ESGLWHRVG Taiwan Semiconductor Corporation ESDLW%20SERIES_D2103.pdf Description: DIODE GP 400V 800MA SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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3000+0.25 EUR
6000+0.23 EUR
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ESGLWHRVG ESGLWHRVG Taiwan Semiconductor Corporation ESDLW%20SERIES_D2103.pdf Description: DIODE GP 400V 800MA SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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500+0.22 EUR
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ESGLW RQG ESGLW RQG Taiwan Semiconductor Corporation ESDLW%20SERIES_A1708.pdf Description: DIODE, SUPER FAST
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ESGLWHRQG ESGLWHRQG Taiwan Semiconductor Corporation ESDLW%20SERIES_A1708.pdf Description: DIODE, SUPER FAST
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HS1JL RVG HS1JL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JL RVG HS1JL RVG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1JFL HS1JFL Taiwan Semiconductor Corporation HS1AFL SERIES_B2103.pdf Description: DIODE GEN PURP 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HS1JFL HS1JFL Taiwan Semiconductor Corporation HS1AFL SERIES_B2103.pdf Description: DIODE GEN PURP 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 15260 Stücke:
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31+0.58 EUR
44+0.40 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.10 EUR
Mindestbestellmenge: 31
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HS1JFS M3G HS1JFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
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HS1JFS M3G HS1JFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
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HS1JAL M3G HS1JAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
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HS1JAL M3G HS1JAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 6200 Stücke:
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HS1JLW RVG HS1JLW RVG Taiwan Semiconductor Corporation HS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JLW RVG HS1JLW RVG Taiwan Semiconductor Corporation HS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
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TUAS8K M3G
TUAS8K M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1445 Stücke:
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SMBJ36CAHM4G SMBJ%20SERIES_R2104.pdf
SMBJ36CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AA
Produkt ist nicht verfügbar
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SMA6J17A R3G SMA6J%20SERIES_E2102.pdf
SMA6J17A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.68 EUR
Mindestbestellmenge: 1800
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SMA6J17A R3G SMA6J%20SERIES_E2102.pdf
SMA6J17A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 3218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
14+1.27 EUR
100+0.97 EUR
500+0.77 EUR
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1SMA4738 M2G 1SMA4737%20SERIES_P2102.pdf
1SMA4738 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Produkt ist nicht verfügbar
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BAT54SW RVG BAT54W%20SERIES_D2102.pdf
BAT54SW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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MURF1620CT C0G MURF1620CT%20SERIES_K2105.pdf
MURF1620CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V ITO-220AB
Produkt ist nicht verfügbar
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MURF1620CTHC0G
MURF1620CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1SMA4755 M2G 1SMA4737%20SERIES_P2102.pdf
1SMA4755 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1.25W DO214AC
Produkt ist nicht verfügbar
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BZV55B6V8 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B6V8 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
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RS1JLS RVG RS1JLS%20SERIES_D2103.pdf
RS1JLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RS1JLS RVG RS1JLS%20SERIES_D2103.pdf
RS1JLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
29+0.61 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.20 EUR
Mindestbestellmenge: 22
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SMDJ51A R7G SMDJ%20SERIES_E1708.pdf
SMDJ51A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51V 82.4V DO214AB
Produkt ist nicht verfügbar
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TS6K80HD3G TS6K40%20SERIES_F2101.pdf
TS6K80HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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TS6KL60 D3G TS6KL60%20SERIES_C15.pdf
TS6KL60 D3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
auf Bestellung 869 Stücke:
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TS6K40 D3G TS6K40%20SERIES_F2101.pdf
TS6K40 D3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TS6K40HD3G TS6K40%20SERIES_F2101.pdf
TS6K40HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TS6K60HD3G TS6K40%20SERIES_F2101.pdf
TS6K60HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SMB10J9.0CA M4G SMB10J%20SERIES_A1511.pdf
SMB10J9.0CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AA
Produkt ist nicht verfügbar
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SMB10J36A M4G SMB10J%20SERIES_A1511.pdf
SMB10J36A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
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SMB10J40A M4G SMB10J%20SERIES_A1511.pdf
SMB10J40A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
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SMB10J36CA M4G SMB10J%20SERIES_A1511.pdf
SMB10J36CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
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SMB10J40CA M4G SMB10J%20SERIES_A1511.pdf
SMB10J40CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
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TSM1NB60CP ROG TSM1NB60CP_A2309.pdf
TSM1NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
Mindestbestellmenge: 2500
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TSM1NB60CP ROG TSM1NB60CP_A2309.pdf
TSM1NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
18+1.03 EUR
100+0.70 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 13
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TSM4NB60CP ROG TSM4NB60_L1901.pdf
TSM4NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Produkt ist nicht verfügbar
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TSM4NB60CP ROG TSM4NB60_L1901.pdf
TSM4NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
auf Bestellung 856 Stücke:
Lieferzeit 10-14 Tag (e)
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BZX79B22 A0G BZX79B2V4%20SERIES_D1610.pdf
BZX79B22 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
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P6SMB39A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB39A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB39A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB39A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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P6SMB39CA R5G P6SMB%20SERIES_Q2209.pdf
P6SMB39CA R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMB39CA R5G P6SMB%20SERIES_Q2209.pdf
P6SMB39CA R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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MBR3050CT C0G MBR3035CT%20SERIES_K2104.pdf
MBR3050CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Produkt ist nicht verfügbar
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MBR3050CTHC0G MBR3035CT%20SERIES_K2104.pdf
MBR3050CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR3050PT C0G MBR3035PT%20SERIES_K2103.pdf
MBR3050PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Produkt ist nicht verfügbar
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BZW04-40 R0G BZW04%20SERIES_I15.pdf
BZW04-40 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Produkt ist nicht verfügbar
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BZW04-44 R0G BZW04%20SERIES_I15.pdf
BZW04-44 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1VC DO204AL
Produkt ist nicht verfügbar
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TSM4953DCS RLG TSM4953D_D15.pdf
TSM4953DCS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.53 EUR
5000+0.48 EUR
12500+0.46 EUR
Mindestbestellmenge: 2500
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TSM4953DCS RLG TSM4953D_D15.pdf
TSM4953DCS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 30V 4.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 22547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
14+1.31 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 9
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SMAJ51AHR3G
SMAJ51AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ51AHR3G
SMAJ51AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS20P05G C2G TS20P01G%20SERIES_O2203.pdf
TS20P05G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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TS1117BCP ROG TS1117B_H1607.pdf
TS1117BCP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR POS ADJ 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 90 µA
Produkt ist nicht verfügbar
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TS1117BCP50 ROG TS1117B_H1607.pdf
TS1117BCP50 ROG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 90 µA
Produkt ist nicht verfügbar
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ESGLW RVG ESDLW%20SERIES_A1708.pdf
ESGLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
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ESGLW RVG ESDLW%20SERIES_A1708.pdf
ESGLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
auf Bestellung 5855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
25+0.72 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
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ESGLWHRVG ESDLW%20SERIES_D2103.pdf
ESGLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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ESGLWHRVG ESDLW%20SERIES_D2103.pdf
ESGLWHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 11915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
45+0.40 EUR
100+0.28 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 39
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ESGLW RQG ESDLW%20SERIES_A1708.pdf
ESGLW RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Produkt ist nicht verfügbar
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ESGLWHRQG ESDLW%20SERIES_A1708.pdf
ESGLWHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SUPER FAST
Produkt ist nicht verfügbar
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HS1JL RVG HS1AL%20SERIES_C2103.pdf
HS1JL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HS1JL RVG HS1AL%20SERIES_C2103.pdf
HS1JL RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1 Stücke:
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HS1JFL HS1AFL SERIES_B2103.pdf
HS1JFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.09 EUR
Mindestbestellmenge: 10000
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HS1JFL HS1AFL SERIES_B2103.pdf
HS1JFL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 15260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
44+0.40 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.10 EUR
Mindestbestellmenge: 31
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HS1JFS M3G
HS1JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
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HS1JFS M3G
HS1JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HS1JAL M3G
HS1JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HS1JAL M3G
HS1JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 6200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HS1JLW RVG HS1DLW%20SERIES_C2103.pdf
HS1JLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HS1JLW RVG HS1DLW%20SERIES_C2103.pdf
HS1JLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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