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PGSMAJ8.0CA R2G PGSMAJ8.0CA R2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHE2G PGSMAJ8.0CAHE2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHE3G PGSMAJ8.0CAHE3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHF2G PGSMAJ8.0CAHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHF3G PGSMAJ8.0CAHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHR2G PGSMAJ8.0CAHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: DIODE TVS 400W SMA
Produkt ist nicht verfügbar
PGSMAJ8.0CA F4G PGSMAJ8.0CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: DIODE TVS 400W SMA
Produkt ist nicht verfügbar
HT12G R0G Taiwan Semiconductor Corporation HT11G%20SERIES_G15.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
HT13G R0G Taiwan Semiconductor Corporation HT11G%20SERIES_G15.pdf Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
HT14G R0G Taiwan Semiconductor Corporation HT11G%20SERIES_G15.pdf Description: DIODE GEN PURP 300V 1A TS-1
Produkt ist nicht verfügbar
F1T2G R0G Taiwan Semiconductor Corporation F1T1G%20SERIES_G14.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHR0G Taiwan Semiconductor Corporation F1T1G%20SERIES_G14.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2G A1G Taiwan Semiconductor Corporation F1T1G%20SERIES_G14.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHA1G Taiwan Semiconductor Corporation F1T1G%20SERIES_G14.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2G A0G Taiwan Semiconductor Corporation F1T1G%20SERIES_G14.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHA0G Taiwan Semiconductor Corporation F1T1G%20SERIES_G14.pdf Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
S1GM RSG S1GM RSG Taiwan Semiconductor Corporation S1GM%20SERIES_I2103.pdf Description: DIODE GEN PURP 400V 1A MICRO SMA
Produkt ist nicht verfügbar
S1GM RSG S1GM RSG Taiwan Semiconductor Corporation S1GM%20SERIES_I2103.pdf Description: DIODE GEN PURP 400V 1A MICRO SMA
Produkt ist nicht verfügbar
BZT55B43 L1G BZT55B43 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 43V 500MW MINI MELF
Produkt ist nicht verfügbar
HS1KAL M3G HS1KAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
HS1KAL M3G HS1KAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
HS1KFS M3G HS1KFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
HS1KFS M3G HS1KFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 5028 Stücke:
Lieferzeit 21-28 Tag (e)
SF1602PT C0G SF1602PT C0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SS16 M2G SS16 M2G Taiwan Semiconductor Corporation SS12%20SERIES_P15.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
Produkt ist nicht verfügbar
TUAS8K M3G TUAS8K M3G Taiwan Semiconductor Corporation Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
TUAS8K M3G TUAS8K M3G Taiwan Semiconductor Corporation Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1445 Stücke:
Lieferzeit 21-28 Tag (e)
SMBJ36CAHM4G SMBJ36CAHM4G Taiwan Semiconductor Corporation SMBJ%20SERIES_R2104.pdf Description: TVS DIODE 36VWM 58.1VC DO214AA
Produkt ist nicht verfügbar
SMA6J17A R3G SMA6J17A R3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
1800+1 EUR
Mindestbestellmenge: 1800
SMA6J17A R3G SMA6J17A R3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 3218 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
14+ 1.88 EUR
100+ 1.44 EUR
500+ 1.14 EUR
Mindestbestellmenge: 13
1SMA4738 M2G 1SMA4738 M2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Produkt ist nicht verfügbar
BAT54SW RVG BAT54SW RVG Taiwan Semiconductor Corporation BAT54W%20SERIES_D2102.pdf Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
TS2937CM33 RNG TS2937CM33 RNG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 3.3V 500MA TO263
Produkt ist nicht verfügbar
MURF1620CT C0G MURF1620CT C0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_K2105.pdf Description: DIODE ARRAY GP 200V ITO-220AB
Produkt ist nicht verfügbar
MURF1620CTHC0G MURF1620CTHC0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA4755 M2G 1SMA4755 M2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 43V 1.25W DO214AC
Produkt ist nicht verfügbar
MTZJ24SA R0G MTZJ24SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 22.62V 500MW DO34
Produkt ist nicht verfügbar
MTZJ2V0SA R0G MTZJ2V0SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 1.99V 500MW DO34
Produkt ist nicht verfügbar
MTZJ2V0SB R0G MTZJ2V0SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 2.11V 500MW DO34
Produkt ist nicht verfügbar
BZV55B6V8 L1G BZV55B6V8 L1G Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
RS1JLS RVG RS1JLS RVG Taiwan Semiconductor Corporation RS1JLS%20SERIES_D2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS1JLS RVG RS1JLS RVG Taiwan Semiconductor Corporation RS1JLS%20SERIES_D2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1945 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
29+ 0.9 EUR
100+ 0.56 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 22
SMDJ51A R7G SMDJ51A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 51V 82.4V DO214AB
Produkt ist nicht verfügbar
TS6K80HD3G TS6K80HD3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 800V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
TS6KL60 D3G TS6KL60 D3G Taiwan Semiconductor Corporation TS6KL60%20SERIES_C15.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBJL
auf Bestellung 869 Stücke:
Lieferzeit 21-28 Tag (e)
TS6K40 D3G TS6K40 D3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
TS6K40HD3G TS6K40HD3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
TS6K60HD3G TS6K60HD3G Taiwan Semiconductor Corporation TS6K40%20SERIES_F2101.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SMB10J9.0CA M4G SMB10J9.0CA M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 9V 15.4V DO214AA
Produkt ist nicht verfügbar
SMB10J36A M4G SMB10J36A M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
SMB10J40A M4G SMB10J40A M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
SMB10J36CA M4G SMB10J36CA M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
SMB10J40CA M4G SMB10J40CA M4G Taiwan Semiconductor Corporation SMB10J%20SERIES_A1511.pdf Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
TSM1NB60CP ROG TSM1NB60CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM1NB60CP Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.62 EUR
5000+ 0.59 EUR
Mindestbestellmenge: 2500
TSM1NB60CP ROG TSM1NB60CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM1NB60CP Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 8702 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.64 EUR
19+ 1.41 EUR
100+ 0.98 EUR
500+ 0.82 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
TSM4NB60CP ROG TSM4NB60CP ROG Taiwan Semiconductor Corporation TSM4NB60_L1901.pdf Description: MOSFET N-CHANNEL 600V 4A TO252
Produkt ist nicht verfügbar
TSM4NB60CP ROG TSM4NB60CP ROG Taiwan Semiconductor Corporation TSM4NB60_L1901.pdf Description: MOSFET N-CHANNEL 600V 4A TO252
auf Bestellung 856 Stücke:
Lieferzeit 21-28 Tag (e)
BZX79B22 A0G BZX79B22 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_D1610.pdf Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
P6SMB39A R5G P6SMB39A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
P6SMB39A R5G P6SMB39A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
PGSMAJ8.0CA R2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CA R2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHE2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CAHE2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHE3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CAHE3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CAHF2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CAHF3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ8.0CAHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CAHR2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Produkt ist nicht verfügbar
PGSMAJ8.0CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ8.0CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Produkt ist nicht verfügbar
HT12G R0G HT11G%20SERIES_G15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
HT13G R0G HT11G%20SERIES_G15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Produkt ist nicht verfügbar
HT14G R0G HT11G%20SERIES_G15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A TS-1
Produkt ist nicht verfügbar
F1T2G R0G F1T1G%20SERIES_G14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHR0G F1T1G%20SERIES_G14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2G A1G F1T1G%20SERIES_G14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHA1G F1T1G%20SERIES_G14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2G A0G F1T1G%20SERIES_G14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
F1T2GHA0G F1T1G%20SERIES_G14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A TS-1
Produkt ist nicht verfügbar
S1GM RSG S1GM%20SERIES_I2103.pdf
S1GM RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Produkt ist nicht verfügbar
S1GM RSG S1GM%20SERIES_I2103.pdf
S1GM RSG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Produkt ist nicht verfügbar
BZT55B43 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B43 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Produkt ist nicht verfügbar
HS1KAL M3G
HS1KAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
HS1KAL M3G
HS1KAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
HS1KFS M3G
HS1KFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
HS1KFS M3G
HS1KFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
auf Bestellung 5028 Stücke:
Lieferzeit 21-28 Tag (e)
SF1602PT C0G SF1601PT%20SERIES_G2103.pdf
SF1602PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
SS16 M2G SS12%20SERIES_P15.pdf
SS16 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO214AC
Produkt ist nicht verfügbar
TUAS8K M3G
TUAS8K M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
TUAS8K M3G
TUAS8K M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 800V, STANDARD RECOVERY RECT
auf Bestellung 1445 Stücke:
Lieferzeit 21-28 Tag (e)
SMBJ36CAHM4G SMBJ%20SERIES_R2104.pdf
SMBJ36CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AA
Produkt ist nicht verfügbar
SMA6J17A R3G SMA6J%20SERIES_E2102.pdf
SMA6J17A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1800+1 EUR
Mindestbestellmenge: 1800
SMA6J17A R3G SMA6J%20SERIES_E2102.pdf
SMA6J17A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 26.7VC DO214AC
auf Bestellung 3218 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.13 EUR
14+ 1.88 EUR
100+ 1.44 EUR
500+ 1.14 EUR
Mindestbestellmenge: 13
1SMA4738 M2G 1SMA4737%20SERIES_P2102.pdf
1SMA4738 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Produkt ist nicht verfügbar
BAT54SW RVG BAT54W%20SERIES_D2102.pdf
BAT54SW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
TS2937CM33 RNG TS2937_E15.pdf
TS2937CM33 RNG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 500MA TO263
Produkt ist nicht verfügbar
MURF1620CT C0G MURF1620CT%20SERIES_K2105.pdf
MURF1620CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V ITO-220AB
Produkt ist nicht verfügbar
MURF1620CTHC0G
MURF1620CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1SMA4755 M2G 1SMA4737%20SERIES_P2102.pdf
1SMA4755 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1.25W DO214AC
Produkt ist nicht verfügbar
MTZJ24SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ24SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.62V 500MW DO34
Produkt ist nicht verfügbar
MTZJ2V0SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ2V0SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 1.99V 500MW DO34
Produkt ist nicht verfügbar
MTZJ2V0SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ2V0SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.11V 500MW DO34
Produkt ist nicht verfügbar
BZV55B6V8 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B6V8 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Produkt ist nicht verfügbar
RS1JLS RVG RS1JLS%20SERIES_D2103.pdf
RS1JLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS1JLS RVG RS1JLS%20SERIES_D2103.pdf
RS1JLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1945 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
29+ 0.9 EUR
100+ 0.56 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 22
SMDJ51A R7G SMDJ%20SERIES_E1708.pdf
SMDJ51A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51V 82.4V DO214AB
Produkt ist nicht verfügbar
TS6K80HD3G TS6K40%20SERIES_F2101.pdf
TS6K80HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
TS6KL60 D3G TS6KL60%20SERIES_C15.pdf
TS6KL60 D3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBJL
auf Bestellung 869 Stücke:
Lieferzeit 21-28 Tag (e)
TS6K40 D3G TS6K40%20SERIES_F2101.pdf
TS6K40 D3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
TS6K40HD3G TS6K40%20SERIES_F2101.pdf
TS6K40HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
TS6K60HD3G TS6K40%20SERIES_F2101.pdf
TS6K60HD3G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
SMB10J9.0CA M4G SMB10J%20SERIES_A1511.pdf
SMB10J9.0CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9V 15.4V DO214AA
Produkt ist nicht verfügbar
SMB10J36A M4G SMB10J%20SERIES_A1511.pdf
SMB10J36A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
SMB10J40A M4G SMB10J%20SERIES_A1511.pdf
SMB10J40A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
SMB10J36CA M4G SMB10J%20SERIES_A1511.pdf
SMB10J36CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AA
Produkt ist nicht verfügbar
SMB10J40CA M4G SMB10J%20SERIES_A1511.pdf
SMB10J40CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40V 64.5V DO214AA
Produkt ist nicht verfügbar
TSM1NB60CP ROG pdf.php?pn=TSM1NB60CP
TSM1NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.62 EUR
5000+ 0.59 EUR
Mindestbestellmenge: 2500
TSM1NB60CP ROG pdf.php?pn=TSM1NB60CP
TSM1NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 8702 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.64 EUR
19+ 1.41 EUR
100+ 0.98 EUR
500+ 0.82 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
TSM4NB60CP ROG TSM4NB60_L1901.pdf
TSM4NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Produkt ist nicht verfügbar
TSM4NB60CP ROG TSM4NB60_L1901.pdf
TSM4NB60CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
auf Bestellung 856 Stücke:
Lieferzeit 21-28 Tag (e)
BZX79B22 A0G BZX79B2V4%20SERIES_D1610.pdf
BZX79B22 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
P6SMB39A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB39A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
P6SMB39A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB39A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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