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SMAJ8.0AHR3G SMAJ8.0AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ9.0AHR3G SMAJ9.0AHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1090 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
39+ 0.67 EUR
100+ 0.4 EUR
500+ 0.37 EUR
Mindestbestellmenge: 31
KBPF207G C8G Taiwan Semiconductor Corporation KBPF204G%20SERIES_A1807.pdf Description: 2A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 4066 Stücke:
Lieferzeit 21-28 Tag (e)
TS10K40-A D3G Taiwan Semiconductor Corporation TS10K40-A%20SERIES_C1907.pdf Description: BRIDGE RECT 1PHASE 400V 10A D3
auf Bestellung 3392 Stücke:
Lieferzeit 21-28 Tag (e)
TSM150NB04DCR RLG TSM150NB04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM250NB06DCR RLG TSM250NB06DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.18 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 2500
TSM150NB04DCR RLG TSM150NB04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 423 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.5 EUR
13+ 2.05 EUR
100+ 1.59 EUR
Mindestbestellmenge: 11
TSM250NB06DCR RLG TSM250NB06DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12314 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.86 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.54 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 10
TSUP10M45SH S1G TSUP10M45SH S1G Taiwan Semiconductor Corporation TSUP10M45SH_A1909.pdf Description: 10A, 45V, SCHOTTKY RECTIFIER
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TSUP10M45SH S1G TSUP10M45SH S1G Taiwan Semiconductor Corporation TSUP10M45SH_A1909.pdf Description: 10A, 45V, SCHOTTKY RECTIFIER
Produkt ist nicht verfügbar
TQM150NB04DCR RLG TQM150NB04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Produkt ist nicht verfügbar
TQM150NB04DCR RLG TQM150NB04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
auf Bestellung 1681 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
DBLS204G RDG DBLS204G RDG Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBLS
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
DBLS106G RDG DBLS106G RDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Produkt ist nicht verfügbar
HS1MAL M3G HS1MAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
HS1MFS M3G HS1MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
HS1MFS M3G HS1MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6728 Stücke:
Lieferzeit 21-28 Tag (e)
HS1MAL M3G HS1MAL M3G Taiwan Semiconductor Corporation Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6950 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DFS M3G ES1DFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1JFS M3G ES1JFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JAL M3G ES1JAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GAL M3G ES1GAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1BAL M3G ES1BAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GFS M3G ES1GFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES1BFS M3G ES1BFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DAL M3G ES1DAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1BAL M3G ES1BAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JFS M3G ES1JFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1BFS M3G ES1BFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JAL M3G ES1JAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 6771 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DAL M3G ES1DAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GAL M3G ES1GAL M3G Taiwan Semiconductor Corporation ES1BAL SERIES_C2103.pdf Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GFS M3G ES1GFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 6853 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DFS M3G ES1DFS M3G Taiwan Semiconductor Corporation ES1BFS SERIES_B2004.pdf Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
TQM150NB04CR RLG TQM150NB04CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.96 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2500
TQM150NB04CR RLG TQM150NB04CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.34 EUR
14+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
MBR2060CT C0G MBR2060CT C0G Taiwan Semiconductor Corporation MBR2035CT%20SERIES_M2104.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
MBR2060CTHC0G MBR2060CTHC0G Taiwan Semiconductor Corporation MBR2035CT%20SERIES_M2104.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
TST30L45CW C0G TST30L45CW C0G Taiwan Semiconductor Corporation TST30L45CW%20SERIES_B15.pdf Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 920 Stücke:
Lieferzeit 21-28 Tag (e)
TST30L45C C0G TST30L45C C0G Taiwan Semiconductor Corporation TST30L45C_B14.pdf Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30L45C C0G TSF30L45C C0G Taiwan Semiconductor Corporation TSF30L45C%20SERIES_E14.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
Produkt ist nicht verfügbar
SK54C V7G SK54C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SK54C V7G SK54C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
1SMA4746 R3G 1SMA4746 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
1SMA4746 R3G 1SMA4746 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
SK320A R3G SK320A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_T1705.pdf Description: DIODE SCHOTTKY 200V 3A DO214AC
Produkt ist nicht verfügbar
SK320A R3G SK320A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_T1705.pdf Description: DIODE SCHOTTKY 200V 3A DO214AC
auf Bestellung 1377 Stücke:
Lieferzeit 21-28 Tag (e)
TSM60NB600CP ROG TSM60NB600CP ROG Taiwan Semiconductor Corporation TSM60NB600CP_A1608.pdf Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+4.53 EUR
Mindestbestellmenge: 2500
TSM60NB600CP ROG TSM60NB600CP ROG Taiwan Semiconductor Corporation TSM60NB600CP_A1608.pdf Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 4999 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.81 EUR
10+ 7.9 EUR
100+ 6.47 EUR
500+ 5.51 EUR
1000+ 4.65 EUR
Mindestbestellmenge: 3
SMDJ70A R7G SMDJ70A R7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMDJ70AHR7G SMDJ70AHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Produkt ist nicht verfügbar
P4SMA20CA M2G P4SMA20CA M2G Taiwan Semiconductor Corporation P4SMA%20SERIES_Q1705.pdf Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CA R3G P4SMA20CA R3G Taiwan Semiconductor Corporation P4SMA%20SERIES_Q1705.pdf Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CAHM2G P4SMA20CAHM2G Taiwan Semiconductor Corporation P4SMA%20SERIES_Q1705.pdf Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CAHR3G P4SMA20CAHR3G Taiwan Semiconductor Corporation P4SMA%20SERIES_Q1705.pdf Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
SMF9.0A RQG SMF9.0A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF9.0A RVG SMF9.0A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF90A RQG SMF90A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF90A RVG SMF90A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 90VWM 146VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.05A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF9.0AHRQG SMF9.0AHRQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMAJ8.0AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ8.0AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ9.0AHR3G SMAJ%20SERIES_U2102.pdf
SMAJ9.0AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1090 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
39+ 0.67 EUR
100+ 0.4 EUR
500+ 0.37 EUR
Mindestbestellmenge: 31
KBPF207G C8G KBPF204G%20SERIES_A1807.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 2A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 4066 Stücke:
Lieferzeit 21-28 Tag (e)
TS10K40-A D3G TS10K40-A%20SERIES_C1907.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A D3
auf Bestellung 3392 Stücke:
Lieferzeit 21-28 Tag (e)
TSM150NB04DCR RLG
TSM150NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM250NB06DCR RLG
TSM250NB06DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.18 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 2500
TSM150NB04DCR RLG
TSM150NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 423 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.5 EUR
13+ 2.05 EUR
100+ 1.59 EUR
Mindestbestellmenge: 11
TSM250NB06DCR RLG
TSM250NB06DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12314 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.86 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.54 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 10
TSUP10M45SH S1G TSUP10M45SH_A1909.pdf
TSUP10M45SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 45V, SCHOTTKY RECTIFIER
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TSUP10M45SH S1G TSUP10M45SH_A1909.pdf
TSUP10M45SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 45V, SCHOTTKY RECTIFIER
Produkt ist nicht verfügbar
TQM150NB04DCR RLG
TQM150NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Produkt ist nicht verfügbar
TQM150NB04DCR RLG
TQM150NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
auf Bestellung 1681 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
DBLS204G RDG DBLS201G%20SERIES_J2103.pdf
DBLS204G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
DBLS106G RDG DBLS101G%20SERIES_P2103.pdf
DBLS106G RDG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Produkt ist nicht verfügbar
HS1MAL M3G
HS1MAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
HS1MFS M3G
HS1MFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
HS1MFS M3G
HS1MFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6728 Stücke:
Lieferzeit 21-28 Tag (e)
HS1MAL M3G
HS1MAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6950 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DFS M3G ES1BFS SERIES_B2004.pdf
ES1DFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1JFS M3G ES1BFS SERIES_B2004.pdf
ES1JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JAL M3G ES1BAL SERIES_C2103.pdf
ES1JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GAL M3G ES1BAL SERIES_C2103.pdf
ES1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1BAL M3G ES1BAL SERIES_C2103.pdf
ES1BAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GFS M3G ES1BFS SERIES_B2004.pdf
ES1GFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)
ES1BFS M3G ES1BFS SERIES_B2004.pdf
ES1BFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DAL M3G ES1BAL SERIES_C2103.pdf
ES1DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1BAL M3G ES1BAL SERIES_C2103.pdf
ES1BAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JFS M3G ES1BFS SERIES_B2004.pdf
ES1JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1BFS M3G ES1BFS SERIES_B2004.pdf
ES1BFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JAL M3G ES1BAL SERIES_C2103.pdf
ES1JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 6771 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DAL M3G ES1BAL SERIES_C2103.pdf
ES1DAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GAL M3G ES1BAL SERIES_C2103.pdf
ES1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
ES1GFS M3G ES1BFS SERIES_B2004.pdf
ES1GFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 6853 Stücke:
Lieferzeit 21-28 Tag (e)
ES1DFS M3G ES1BFS SERIES_B2004.pdf
ES1DFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)
TQM150NB04CR RLG
TQM150NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.96 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2500
TQM150NB04CR RLG
TQM150NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.34 EUR
14+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
MBR2060CT C0G MBR2035CT%20SERIES_M2104.pdf
MBR2060CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
MBR2060CTHC0G MBR2035CT%20SERIES_M2104.pdf
MBR2060CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
TST30L45CW C0G TST30L45CW%20SERIES_B15.pdf
TST30L45CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 920 Stücke:
Lieferzeit 21-28 Tag (e)
TST30L45C C0G TST30L45C_B14.pdf
TST30L45C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
TSF30L45C C0G TSF30L45C%20SERIES_E14.pdf
TSF30L45C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Produkt ist nicht verfügbar
SK54C V7G SK52C%20SERIES_Q2102.pdf
SK54C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SK54C V7G SK52C%20SERIES_Q2102.pdf
SK54C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
1SMA4746 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4746 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
1SMA4746 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4746 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
SK320A R3G SK32A%20SERIES_T1705.pdf
SK320A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AC
Produkt ist nicht verfügbar
SK320A R3G SK32A%20SERIES_T1705.pdf
SK320A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AC
auf Bestellung 1377 Stücke:
Lieferzeit 21-28 Tag (e)
TSM60NB600CP ROG TSM60NB600CP_A1608.pdf
TSM60NB600CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+4.53 EUR
Mindestbestellmenge: 2500
TSM60NB600CP ROG TSM60NB600CP_A1608.pdf
TSM60NB600CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 4999 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.81 EUR
10+ 7.9 EUR
100+ 6.47 EUR
500+ 5.51 EUR
1000+ 4.65 EUR
Mindestbestellmenge: 3
SMDJ70A R7G SMDJH%20SERIES_B2104.pdf
SMDJ70A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMDJ70AHR7G SMDJH%20SERIES_B2104.pdf
SMDJ70AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Produkt ist nicht verfügbar
P4SMA20CA M2G P4SMA%20SERIES_Q1705.pdf
P4SMA20CA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CA R3G P4SMA%20SERIES_Q1705.pdf
P4SMA20CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CAHM2G P4SMA%20SERIES_Q1705.pdf
P4SMA20CAHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CAHR3G P4SMA%20SERIES_Q1705.pdf
P4SMA20CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
SMF9.0A RQG SMF5.0A%20SERIES_B1709.pdf
SMF9.0A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF9.0A RVG SMF5.0A%20SERIES_D2103.pdf
SMF9.0A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF90A RQG SMF5.0A%20SERIES_B1709.pdf
SMF90A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF90A RVG SMF5.0A%20SERIES_D2103.pdf
SMF90A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.05A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF9.0AHRQG SMF5.0A%20SERIES_B1709.pdf
SMF9.0AHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
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