Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25539) > Seite 144 nach 426
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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HS1JAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 600V, HIGH EFFICIENT R |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 600V, HIGH EFFICIENT R |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JLW RVG | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 600V 1A SOD123WCurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JLW RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123W Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1J M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1JL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DFL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A SOD123F Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 11pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1DFL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A SOD123F Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 11pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
auf Bestellung 35417 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1DFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 200V, HIGH EFFICIENT R |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 200V, HIGH EFFICIENT R |
auf Bestellung 6790 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 200V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 1A, 200V, HIGH EFFICIENT R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Mounting Type: Surface Mount Package / Case: DO-219AB Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DLW RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD123W Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DLW RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD123W Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123W Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1D M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1KSMB10CA M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8.55VWM 14.5VC DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRF1560CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 60V ITO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS1560CT MNG | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 60V TO263AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS1560CTHMNG | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 60V TO263AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS1560CT-Y MNG | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 60V TO263AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRF1560CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 60V ITO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
RYG.jpg "BZY55C6V2 RYG") |
BZY55C6V2 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 500MW 0805 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BZY55C8V2 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 500MW 0805 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZY55B6V2 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 500MW 0805 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZY55B8V2 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 500MW 0805 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS2BA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS2BA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 6A100G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 6A R-6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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HS1AL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
auf Bestellung 1595 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1A M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1A R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1AL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A SUB SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HS1JAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1JAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
auf Bestellung 6200 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1JLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1JLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1J M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 600V 1A SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Description: DIODE GEN PURP 600V 1A SUB SMA
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1JL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DFL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.075 EUR |
| 20000+ | 0.068 EUR |
| 30000+ | 0.064 EUR |
| HS1DFL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 1A SOD123F
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
auf Bestellung 35417 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 77+ | 0.27 EUR |
| 125+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.096 EUR |
| 5000+ | 0.083 EUR |
| HS1DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
auf Bestellung 6790 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1DAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1DAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
Description: 50NS, 1A, 200V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| HS1DL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A SUB SMA
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 200V 1A SOD123W
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1DLW RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A SOD123W
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1D M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Description: DIODE GEN PURP 200V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Description: DIODE GEN PURP 200V 1A SUB SMA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 1KSMB10CA M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| MBRF1560CT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MBRS1560CT MNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBRS1560CTHMNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBRS1560CT-Y MNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBRF1560CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZY55C6V2 RYG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW 0805
Description: DIODE ZENER 6.2V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BZY55C8V2 RYG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW 0805
Description: DIODE ZENER 8.2V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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| BZY55B6V2 RYG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW 0805
Description: DIODE ZENER 6.2V 500MW 0805
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZY55B8V2 RYG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW 0805
Description: DIODE ZENER 8.2V 500MW 0805
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RS2BA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RS2BA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 6A100G R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 6A R-6
Description: DIODE GEN PURP 6A R-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| HS1AL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.54 EUR |
| HS1A M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Description: DIODE GEN PURP 50V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Description: DIODE GEN PURP 50V 1A SUB SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1A R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Description: DIODE GEN PURP 50V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Description: DIODE GEN PURP 50V 1A SUB SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 50V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Description: DIODE GEN PURP 50V 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1AL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Description: DIODE GEN PURP 50V 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH