Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (22305) > Seite 144 nach 372
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SMAJ8.0AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8VWM 13.6VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 29.4A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 400W Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMAJ9.0AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 1090 Stücke: Lieferzeit 21-28 Tag (e) |
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KBPF207G C8G | Taiwan Semiconductor Corporation | Description: 2A 1000V STANDARD BRIDGE RECTIFI |
auf Bestellung 4066 Stücke: Lieferzeit 21-28 Tag (e) |
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TS10K40-A D3G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 400V 10A D3 |
auf Bestellung 3392 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar |
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TSM250NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 7A/30A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 423 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM250NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 7A/30A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
auf Bestellung 12314 Stücke: Lieferzeit 21-28 Tag (e) |
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TSUP10M45SH S1G | Taiwan Semiconductor Corporation | Description: 10A, 45V, SCHOTTKY RECTIFIER |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSUP10M45SH S1G | Taiwan Semiconductor Corporation | Description: 10A, 45V, SCHOTTKY RECTIFIER |
Produkt ist nicht verfügbar |
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TQM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFNU (5x6) |
Produkt ist nicht verfügbar |
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TQM150NB04DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFNU (5x6) |
auf Bestellung 1681 Stücke: Lieferzeit 21-28 Tag (e) |
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DBLS204G RDG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 400V 2A DBLS |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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DBLS106G RDG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 800V 1A DBLS |
Produkt ist nicht verfügbar |
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HS1MAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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HS1MFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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HS1MFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 6728 Stücke: Lieferzeit 21-28 Tag (e) |
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HS1MAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 1A, 1000V, HIGH EFFICIENT |
auf Bestellung 6950 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1DFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1JFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 600V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
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ES1JAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 600V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1GAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1BAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 100V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1GFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1BFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 100V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1DAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1BAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 100V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
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ES1JFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 600V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
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ES1BFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 100V, SUPER FAST RECOV |
Produkt ist nicht verfügbar |
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ES1JAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 600V, SUPER FAST RECOV |
auf Bestellung 6771 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1DAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1GAL M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1GFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 400V, SUPER FAST RECOV |
auf Bestellung 6853 Stücke: Lieferzeit 21-28 Tag (e) |
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ES1DFS M3G | Taiwan Semiconductor Corporation | Description: 35NS, 1A, 200V, SUPER FAST RECOV |
auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) |
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TQM150NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 10A/41A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TQM150NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 10A/41A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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MBR2060CT C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 60V TO220AB |
Produkt ist nicht verfügbar |
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MBR2060CTHC0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 60V TO220AB |
Produkt ist nicht verfügbar |
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TST30L45CW C0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 45V 15A TO220AB |
auf Bestellung 920 Stücke: Lieferzeit 21-28 Tag (e) |
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TST30L45C C0G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 45V 15A TO220AB |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSF30L45C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 45V ITO220AB |
Produkt ist nicht verfügbar |
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SK54C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
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SK54C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 5A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
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1SMA4746 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Discontinued at Digi-Key Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V |
Produkt ist nicht verfügbar |
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1SMA4746 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1.25W DO214AC Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Discontinued at Digi-Key Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V |
Produkt ist nicht verfügbar |
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SK320A R3G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 200V 3A DO214AC |
Produkt ist nicht verfügbar |
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SK320A R3G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 200V 3A DO214AC |
auf Bestellung 1377 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM60NB600CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 7A TO252 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM60NB600CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 7A TO252 |
auf Bestellung 4999 Stücke: Lieferzeit 21-28 Tag (e) |
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SMDJ70A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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SMDJ70AHR7G | Taiwan Semiconductor Corporation | Description: TVS DIODE 70VWM 113VC DO214AB |
Produkt ist nicht verfügbar |
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P4SMA20CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
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P4SMA20CA R3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
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P4SMA20CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
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P4SMA20CAHR3G | Taiwan Semiconductor Corporation | Description: TVS DIODE 17.1V 27.7V DO214AC |
Produkt ist nicht verfügbar |
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SMF9.0A RQG | Taiwan Semiconductor Corporation | Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
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SMF9.0A RVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 9VWM 15.4VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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SMF90A RQG | Taiwan Semiconductor Corporation | Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
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SMF90A RVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 90VWM 146VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.05A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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SMF9.0AHRQG | Taiwan Semiconductor Corporation | Description: DIODE, TVS, UNIDIRECTIONAL, 200W |
Produkt ist nicht verfügbar |
SMAJ8.0AHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
SMAJ9.0AHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1090 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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31+ | 0.86 EUR |
39+ | 0.67 EUR |
100+ | 0.4 EUR |
500+ | 0.37 EUR |
KBPF207G C8G |
Hersteller: Taiwan Semiconductor Corporation
Description: 2A 1000V STANDARD BRIDGE RECTIFI
Description: 2A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 4066 Stücke:
Lieferzeit 21-28 Tag (e)TS10K40-A D3G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A D3
Description: BRIDGE RECT 1PHASE 400V 10A D3
auf Bestellung 3392 Stücke:
Lieferzeit 21-28 Tag (e)TSM150NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM250NB06DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.18 EUR |
5000+ | 1.13 EUR |
TSM150NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 8A/38A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 423 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.5 EUR |
13+ | 2.05 EUR |
100+ | 1.59 EUR |
TSM250NB06DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 7A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 12314 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.86 EUR |
12+ | 2.34 EUR |
100+ | 1.82 EUR |
500+ | 1.54 EUR |
1000+ | 1.26 EUR |
TSUP10M45SH S1G |
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 45V, SCHOTTKY RECTIFIER
Description: 10A, 45V, SCHOTTKY RECTIFIER
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)TSUP10M45SH S1G |
Hersteller: Taiwan Semiconductor Corporation
Description: 10A, 45V, SCHOTTKY RECTIFIER
Description: 10A, 45V, SCHOTTKY RECTIFIER
Produkt ist nicht verfügbar
TQM150NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Produkt ist nicht verfügbar
TQM150NB04DCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Description: MOSFET 2N-CH 40V 9A/39A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
auf Bestellung 1681 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.12 EUR |
11+ | 2.55 EUR |
100+ | 1.99 EUR |
500+ | 1.68 EUR |
1000+ | 1.37 EUR |
DBLS204G RDG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)DBLS106G RDG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Produkt ist nicht verfügbar
HS1MAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)HS1MFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)HS1MFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6728 Stücke:
Lieferzeit 21-28 Tag (e)HS1MAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
auf Bestellung 6950 Stücke:
Lieferzeit 21-28 Tag (e)ES1DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)ES1JFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)ES1GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)ES1BAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)ES1GFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 3500 Stücke:
Lieferzeit 21-28 Tag (e)ES1BFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)ES1DAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)ES1BAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1BFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Description: 35NS, 1A, 100V, SUPER FAST RECOV
Produkt ist nicht verfügbar
ES1JAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 600V, SUPER FAST RECOV
Description: 35NS, 1A, 600V, SUPER FAST RECOV
auf Bestellung 6771 Stücke:
Lieferzeit 21-28 Tag (e)ES1DAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)ES1GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)ES1GFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 400V, SUPER FAST RECOV
Description: 35NS, 1A, 400V, SUPER FAST RECOV
auf Bestellung 6853 Stücke:
Lieferzeit 21-28 Tag (e)ES1DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 200V, SUPER FAST RECOV
Description: 35NS, 1A, 200V, SUPER FAST RECOV
auf Bestellung 7000 Stücke:
Lieferzeit 21-28 Tag (e)TQM150NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.96 EUR |
5000+ | 0.91 EUR |
TQM150NB04CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 10A/41A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.34 EUR |
14+ | 1.9 EUR |
100+ | 1.48 EUR |
500+ | 1.25 EUR |
1000+ | 1.02 EUR |
MBR2060CT C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
MBR2060CTHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Produkt ist nicht verfügbar
TST30L45CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A TO220AB
Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 920 Stücke:
Lieferzeit 21-28 Tag (e)TST30L45C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A TO220AB
Description: DIODE SCHOTTKY 45V 15A TO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)TSF30L45C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Produkt ist nicht verfügbar
SK54C V7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
SK54C V7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
1SMA4746 R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
1SMA4746 R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Description: DIODE ZENER 18V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V
Produkt ist nicht verfügbar
SK320A R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AC
Description: DIODE SCHOTTKY 200V 3A DO214AC
Produkt ist nicht verfügbar
SK320A R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO214AC
Description: DIODE SCHOTTKY 200V 3A DO214AC
auf Bestellung 1377 Stücke:
Lieferzeit 21-28 Tag (e)TSM60NB600CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 7A TO252
Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 4.53 EUR |
TSM60NB600CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 7A TO252
Description: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 4999 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.81 EUR |
10+ | 7.9 EUR |
100+ | 6.47 EUR |
500+ | 5.51 EUR |
1000+ | 4.65 EUR |
SMDJ70A R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMDJ70AHR7G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
Produkt ist nicht verfügbar
P4SMA20CA M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CA R3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CAHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
P4SMA20CAHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AC
Description: TVS DIODE 17.1V 27.7V DO214AC
Produkt ist nicht verfügbar
SMF9.0A RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF9.0A RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF90A RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar
SMF90A RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.05A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 90VWM 146VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.05A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMF9.0AHRQG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Description: DIODE, TVS, UNIDIRECTIONAL, 200W
Produkt ist nicht verfügbar