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P6SMB160AHM4G P6SMB160AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 136VWM 219VC DO214AA
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TSM4ND60CI C0G TSM4ND60CI C0G Taiwan Semiconductor Corporation TSM4ND60CI_A1804.pdf Description: MOSFET N-CH 600V 4A ITO220
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P4SMA6.8A M2G P4SMA6.8A M2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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P4SMA6.8AHM2G P4SMA6.8AHM2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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P4SMA6.8A R3G P4SMA6.8A R3G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA6.8AHR3G P4SMA6.8AHR3G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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TSH253CX RFG TSH253CX RFG Taiwan Semiconductor Corporation TSH253_C13.pdf Description: MAGNETIC SWITCH SOT23
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TSH253CX RFG TSH253CX RFG Taiwan Semiconductor Corporation TSH253_C13.pdf Description: MAGNETIC SWITCH SOT23
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TSH253CT B0G TSH253CT B0G Taiwan Semiconductor Corporation TSH253_C13.pdf Description: MAGNETIC SWITCH TO92S
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TSS42U RGG TSS42U RGG Taiwan Semiconductor Corporation TSS42U SERIES_D1601.pdf Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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8000+0.097 EUR
12000+0.092 EUR
20000+0.086 EUR
28000+0.083 EUR
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TSS42U RGG TSS42U RGG Taiwan Semiconductor Corporation TSS42U SERIES_D1601.pdf Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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SF35G A0G SF35G A0G Taiwan Semiconductor Corporation SF31G%20SERIES_G14.pdf Description: DIODE GEN PURP 300V 3A DO201AD
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SF35GHA0G SF35GHA0G Taiwan Semiconductor Corporation SF31G%20SERIES_G14.pdf Description: DIODE GEN PURP 300V 3A DO201AD
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SF35G B0G SF35G B0G Taiwan Semiconductor Corporation SF31G%20SERIES_G14.pdf Description: DIODE GEN PURP 300V 3A DO201AD
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SF35GHB0G SF35GHB0G Taiwan Semiconductor Corporation SF31G%20SERIES_G14.pdf Description: DIODE GEN PURP 300V 3A DO201AD
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S1AL R3G S1AL R3G Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 50V 1A SUB SMA
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P6SMB180CA M4G P6SMB180CA M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHM4G P6SMB180CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHR5G P6SMB180CAHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 154VWM 246VC DO214AA
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TSC873CT A3G Taiwan Semiconductor Corporation TSC873_D15.pdf Description: TRANS NPN 400V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TSC873CT B0G Taiwan Semiconductor Corporation TSC873_D15.pdf Description: TRANS NPN 400V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TS6P05G D2G TS6P05G D2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_L2104.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
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TS6P05G C2G TS6P05G C2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_M2203.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS6P05GHC2G TS6P05GHC2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_M2203.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS6P05GHD2G TS6P05GHD2G Taiwan Semiconductor Corporation TS6P01G%20SERIES_L2104.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
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TQM300NB06CR RLG TQM300NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 6A/27A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V
Qualification: AEC-Q101
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TQM300NB06CR RLG TQM300NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 6A/27A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4999 Stücke:
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100+0.94 EUR
500+0.8 EUR
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MBRF16100 C0G MBRF16100 C0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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MBRF16100HC0G MBRF16100HC0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Qualification: AEC-Q101
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MBRF1635 C0G MBRF1635 C0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_J1512.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
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MBRF1635HC0G MBRF1635HC0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
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MBRF1645 C0G MBRF1645 C0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 45V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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MBRF1690 C0G MBRF1690 C0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_J1512.pdf Description: DIODE SCHOTTKY 90V 16A ITO220AC
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MBRF1690HC0G MBRF1690HC0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_J1512.pdf Description: DIODE SCHOTTKY 90V 16A ITO220AC
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MBRF16H45 C0G MBRF16H45 C0G Taiwan Semiconductor Corporation MBRF16H45_E1512.pdf Description: DIODE SCHOTTKY 45V 16A ITO220AC
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MURF1640CTHC0G MURF1640CTHC0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 400V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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SRF1630 C0G SRF1630 C0G Taiwan Semiconductor Corporation SRF1620%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTT 30V ITO220AB
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SRF1630HC0G SRF1630HC0G Taiwan Semiconductor Corporation SRF1620%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTT 30V ITO220AB
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TSM60NB041PW C1G TSM60NB041PW C1G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB041PW Description: MOSFET N-CHANNEL 600V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 21.7A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
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10+21.82 EUR
100+18.87 EUR
500+17.1 EUR
1000+15.69 EUR
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SMB10J24CAHR5G SMB10J24CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMB10J24CAHR5G SMB10J24CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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6+3.27 EUR
10+2.09 EUR
100+1.42 EUR
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GBPC5001 T0G GBPC5001 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 100V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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GBPC5001M T0G GBPC5001M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 100V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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GBPC5002 T0G GBPC5002 T0G Taiwan Semiconductor Corporation GBPC40,%2050%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 200V 50A GBPC40
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GBPC5002M T0G GBPC5002M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 200V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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GBPC5004 T0G GBPC5004 T0G Taiwan Semiconductor Corporation GBPC40,%2050%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 400V 50A GBPC40
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GBPC5004M T0G GBPC5004M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 400V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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BZT52C20S RRG BZT52C20S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
Produkt ist nicht verfügbar
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BZT52C20S RRG BZT52C20S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
Produkt ist nicht verfügbar
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TSM4435BCS RLG TSM4435BCS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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TSM4435BCS RLG TSM4435BCS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Produkt ist nicht verfügbar
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SMAJ7.0CAHR3G SMAJ7.0CAHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM1N45DCS RLG TSM1N45DCS RLG Taiwan Semiconductor Corporation TSM1N45DCS-RLG.pdf Description: MOSFET N-CH 450V 500MA 8SOP
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TSM1N45DCS RLG TSM1N45DCS RLG Taiwan Semiconductor Corporation TSM1N45DCS-RLG.pdf Description: MOSFET N-CH 450V 500MA 8SOP
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TSZU52C5V6 RGG TSZU52C5V6 RGG Taiwan Semiconductor Corporation TSZU52C2V0 SERIES_G2009.pdf Description: DIODE ZENER 5.6V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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SMDJ48A M6G SMDJ48A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
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SMDJ48AHM6G SMDJ48AHM6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
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SMDJ48A R7G SMDJ48A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
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SMDJ48AHR7G SMDJ48AHR7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
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5.0SMDJ48AHM6G 5.0SMDJ48AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
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P6SMB160AHM4G P6SMB%20SERIES_P2102.pdf
P6SMB160AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
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TSM4ND60CI C0G TSM4ND60CI_A1804.pdf
TSM4ND60CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220
auf Bestellung 464 Stücke:
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P4SMA6.8A M2G P4SMA%20SERIES_S2102.pdf
P4SMA6.8A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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P4SMA6.8AHM2G P4SMA%20SERIES_S2102.pdf
P4SMA6.8AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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P4SMA6.8A R3G P4SMA%20SERIES_S2102.pdf
P4SMA6.8A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA6.8AHR3G P4SMA%20SERIES_S2102.pdf
P4SMA6.8AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
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TSH253CX RFG TSH253_C13.pdf
TSH253CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
auf Bestellung 3000 Stücke:
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TSH253CX RFG TSH253_C13.pdf
TSH253CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
auf Bestellung 105 Stücke:
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TSH253CT B0G TSH253_C13.pdf
TSH253CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
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TSS42U RGG TSS42U SERIES_D1601.pdf
TSS42U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
8000+0.097 EUR
12000+0.092 EUR
20000+0.086 EUR
28000+0.083 EUR
Mindestbestellmenge: 4000
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TSS42U RGG TSS42U SERIES_D1601.pdf
TSS42U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 37513 Stücke:
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Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 34
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SF35G A0G SF31G%20SERIES_G14.pdf
SF35G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
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SF35GHA0G SF31G%20SERIES_G14.pdf
SF35GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
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SF35G B0G SF31G%20SERIES_G14.pdf
SF35G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
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SF35GHB0G SF31G%20SERIES_G14.pdf
SF35GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
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S1AL R3G S1AL%20SERIES_Q2108.pdf
S1AL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
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P6SMB180CA M4G P6SMB%20SERIES_P2102.pdf
P6SMB180CA M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHM4G P6SMB%20SERIES_P2102.pdf
P6SMB180CAHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
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P6SMB180CAHR5G P6SMB%20SERIES_P2102.pdf
P6SMB180CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
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TSC873CT A3G TSC873_D15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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TSC873CT B0G TSC873_D15.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 250mA, 10V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
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TS6P05G D2G TS6P01G%20SERIES_L2104.pdf
TS6P05G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
auf Bestellung 1104 Stücke:
Lieferzeit 10-14 Tag (e)
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TS6P05G C2G TS6P01G%20SERIES_M2203.pdf
TS6P05G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS6P05GHC2G TS6P01G%20SERIES_M2203.pdf
TS6P05GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TS6P05GHD2G TS6P01G%20SERIES_L2104.pdf
TS6P05GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
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TQM300NB06CR RLG
TQM300NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 6A/27A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.61 EUR
Mindestbestellmenge: 2500
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TQM300NB06CR RLG
TQM300NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 6A/27A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.21 EUR
100+0.94 EUR
500+0.8 EUR
1000+0.65 EUR
Mindestbestellmenge: 12
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MBRF16100 C0G MBRF1635%20SERIES_K2105.pdf
MBRF16100 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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MBRF16100HC0G MBRF1635%20SERIES_K2105.pdf
MBRF16100HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Qualification: AEC-Q101
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MBRF1635 C0G MBRF1635%20SERIES_J1512.pdf
MBRF1635 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A ITO220AC
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MBRF1635HC0G MBRF1635%20SERIES_K2105.pdf
MBRF1635HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF1645 C0G MBRF1635%20SERIES_K2105.pdf
MBRF1645 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
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MBRF1690 C0G MBRF1635%20SERIES_J1512.pdf
MBRF1690 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 16A ITO220AC
Produkt ist nicht verfügbar
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MBRF1690HC0G MBRF1635%20SERIES_J1512.pdf
MBRF1690HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 16A ITO220AC
Produkt ist nicht verfügbar
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MBRF16H45 C0G MBRF16H45_E1512.pdf
MBRF16H45 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 16A ITO220AC
Produkt ist nicht verfügbar
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MURF1640CTHC0G
MURF1640CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SRF1630 C0G SRF1620%20SERIES_I13.pdf
SRF1630 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 30V ITO220AB
Produkt ist nicht verfügbar
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SRF1630HC0G SRF1620%20SERIES_I13.pdf
SRF1630HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 30V ITO220AB
Produkt ist nicht verfügbar
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TSM60NB041PW C1G pdf.php?pn=TSM60NB041PW
TSM60NB041PW C1G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 21.7A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.76 EUR
10+21.82 EUR
100+18.87 EUR
500+17.1 EUR
1000+15.69 EUR
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SMB10J24CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J24CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+0.97 EUR
Mindestbestellmenge: 850
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SMB10J24CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J24CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.7A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.09 EUR
100+1.42 EUR
Mindestbestellmenge: 6
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GBPC5001 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5001 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC5001M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5001M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC5002 T0G GBPC40,%2050%20SERIES_E2103.pdf
GBPC5002 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 50A GBPC40
Produkt ist nicht verfügbar
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GBPC5002M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5002M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC5004 T0G GBPC40,%2050%20SERIES_E2103.pdf
GBPC5004 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 50A GBPC40
Produkt ist nicht verfügbar
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GBPC5004M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5004M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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BZT52C20S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C20S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
Produkt ist nicht verfügbar
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BZT52C20S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C20S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
Produkt ist nicht verfügbar
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TSM4435BCS RLG
TSM4435BCS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Produkt ist nicht verfügbar
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TSM4435BCS RLG
TSM4435BCS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Produkt ist nicht verfügbar
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SMAJ7.0CAHR3G
SMAJ7.0CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM1N45DCS RLG TSM1N45DCS-RLG.pdf
TSM1N45DCS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 450V 500MA 8SOP
Produkt ist nicht verfügbar
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TSM1N45DCS RLG TSM1N45DCS-RLG.pdf
TSM1N45DCS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 450V 500MA 8SOP
Produkt ist nicht verfügbar
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TSZU52C5V6 RGG TSZU52C2V0 SERIES_G2009.pdf
TSZU52C5V6 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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SMDJ48A M6G SMDJ%20SERIES_E1708.pdf
SMDJ48A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Produkt ist nicht verfügbar
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SMDJ48AHM6G SMDJ%20SERIES_E1708.pdf
SMDJ48AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Produkt ist nicht verfügbar
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SMDJ48A R7G SMDJ%20SERIES_E1708.pdf
SMDJ48A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Produkt ist nicht verfügbar
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SMDJ48AHR7G SMDJ%20SERIES_E1708.pdf
SMDJ48AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Produkt ist nicht verfügbar
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5.0SMDJ48AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ48AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Produkt ist nicht verfügbar
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