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ABS20M REG ABS20M REG Taiwan Semiconductor Corporation ABS20M_B2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A ABS
auf Bestellung 7000 Stücke:
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2000+ 0.67 EUR
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ABS20M REG ABS20M REG Taiwan Semiconductor Corporation ABS20M_B2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A ABS
auf Bestellung 7589 Stücke:
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13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.91 EUR
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TSM7N65ACI C0G TSM7N65ACI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 650V 7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 25 V
Produkt ist nicht verfügbar
1PGSMA4753 M2G 1PGSMA4753 M2G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_A1707.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Produkt ist nicht verfügbar
TSS0340L RWG TSS0340L RWG Taiwan Semiconductor Corporation TSS0340L_B14.pdf Description: DIODE SCHOTTKY 45V 30MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Produkt ist nicht verfügbar
TSS0340U RGG TSS0340U RGG Taiwan Semiconductor Corporation TSS0340U_D1604.pdf Description: DIODE SCHOTTKY 45V 30MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Produkt ist nicht verfügbar
S1KLS RVG S1KLS RVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
S1KLS RVG S1KLS RVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
SR20100 C0G SR20100 C0G Taiwan Semiconductor Corporation SR2020%20SERIES_J2104.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
SR20100HC0G SR20100HC0G Taiwan Semiconductor Corporation SR2020%20SERIES_J2104.pdf Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR20100PT C0G SR20100PT C0G Taiwan Semiconductor Corporation SR2020PT%20SERIES_J2103.pdf Description: DIODE ARRAY GP 100V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
SR20100PTHC0G SR20100PTHC0G Taiwan Semiconductor Corporation SR2020PT%20SERIES_H15.pdf Description: DIODE ARRAY GP 100V 20A TO247AD
Produkt ist nicht verfügbar
SFAF2004G C0G SFAF2004G C0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 200V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
SFAF2004GHC0G SFAF2004GHC0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 200V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6KE130CA A0G P6KE130CA A0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P6KE130CAHA0G P6KE130CAHA0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P6KE130CA B0G P6KE130CA B0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P6KE130CAHB0G P6KE130CAHB0G Taiwan Semiconductor Corporation P6KE%20SERIES_O2109.pdf Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P4KE68A R0G P4KE68A R0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
Produkt ist nicht verfügbar
P4KE68AHA0G P4KE68AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8 R0G BZW04-5V8 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8B R0G BZW04-5V8B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8HR0G BZW04-5V8HR0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8BHR0G BZW04-5V8BHR0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8 R1G BZW04-5V8 R1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8B R1G BZW04-5V8B R1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8BHR1G BZW04-5V8BHR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8HR1G BZW04-5V8HR1G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8 A0G BZW04-5V8 A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8B A0G BZW04-5V8B A0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8BHA0G BZW04-5V8BHA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8HA0G BZW04-5V8HA0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8 B0G BZW04-5V8 B0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8B B0G BZW04-5V8B B0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8BHB0G BZW04-5V8BHB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8HB0G BZW04-5V8HB0G Taiwan Semiconductor Corporation BZW04%20SERIES_J2104.pdf Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
TSM6866SDCA RVG TSM6866SDCA RVG Taiwan Semiconductor Corporation TSM6866SD_C15.pdf Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
TSM6866SDCA RVG TSM6866SDCA RVG Taiwan Semiconductor Corporation TSM6866SD_C15.pdf Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
SRAS20150 MNG SRAS20150 MNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_L15.pdf Description: DIODE SCHOTTKY 150V 20A TO263AB
Produkt ist nicht verfügbar
SRAS20150HMNG SRAS20150HMNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_L15.pdf Description: DIODE SCHOTTKY 150V 20A TO263AB
Produkt ist nicht verfügbar
RS3KB-T R5G RS3KB-T R5G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS3KB-T R5G RS3KB-T R5G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
Mindestbestellmenge: 24
S3KB M4G S3KB M4G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
S3KBHM4G S3KBHM4G Taiwan Semiconductor Corporation S3AB%20SERIES_L1705.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
HS3KB M4G HS3KB M4G Taiwan Semiconductor Corporation HS3AB%20SERIES_K1701.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
S3KBHR5G S3KBHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
RS3JB-T R5G RS3JB-T R5G Taiwan Semiconductor Corporation RS3DB-T%20SERIES_C2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS3JB-T R5G RS3JB-T R5G Taiwan Semiconductor Corporation RS3DB-T%20SERIES_C2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 390 Stücke:
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28+ 0.63 EUR
100+ 0.43 EUR
Mindestbestellmenge: 23
RS3J V7G RS3J V7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 3A DO214AB
auf Bestellung 1501 Stücke:
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RS3J R7G RS3J R7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
RS3J M6G RS3J M6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
RS3J V6G RS3J V6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
RS3JHM6G RS3JHM6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
RS3JHR7G RS3JHR7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
TSZU52C5V1 RGG TSZU52C5V1 RGG Taiwan Semiconductor Corporation TSZU52C2V0%20SERIES_F1601.pdf Description: DIODE ZENER 5.1V 150MW 0603
Produkt ist nicht verfügbar
SA58AHR0G SA58AHR0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 58VWM 93.6VC DO204AC
Produkt ist nicht verfügbar
SA58CAHR0G SA58CAHR0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 58VWM 93.6VC DO204AC
Produkt ist nicht verfügbar
TLD8S10AH TLD8S10AH Taiwan Semiconductor Corporation pdf.php?pn=TLD8S10AH Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.09 EUR
10+ 5.12 EUR
100+ 4.14 EUR
Mindestbestellmenge: 3
TLD5S10AH TLD5S10AH Taiwan Semiconductor Corporation pdf.php?pn=TLD5S10AH Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLD6S10AH TLD6S10AH Taiwan Semiconductor Corporation pdf.php?pn=TLD6S10AH Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ABS20M REG ABS20M_B2103.pdf
ABS20M REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.72 EUR
2000+ 0.67 EUR
5000+ 0.65 EUR
Mindestbestellmenge: 1000
ABS20M REG ABS20M_B2103.pdf
ABS20M REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
auf Bestellung 7589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.57 EUR
13+ 1.41 EUR
100+ 1.1 EUR
500+ 0.91 EUR
Mindestbestellmenge: 12
TSM7N65ACI C0G
TSM7N65ACI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 25 V
Produkt ist nicht verfügbar
1PGSMA4753 M2G 1PGSMA%20SERIES_A1707.pdf
1PGSMA4753 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1.25W DO214AC
Produkt ist nicht verfügbar
TSS0340L RWG TSS0340L_B14.pdf
TSS0340L RWG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 30MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Produkt ist nicht verfügbar
TSS0340U RGG TSS0340U_D1604.pdf
TSS0340U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 30MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Produkt ist nicht verfügbar
S1KLS RVG S1DLS%20SERIES_H2103.pdf
S1KLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
S1KLS RVG S1DLS%20SERIES_H2103.pdf
S1KLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
SR20100 C0G SR2020%20SERIES_J2104.pdf
SR20100 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
SR20100HC0G SR2020%20SERIES_J2104.pdf
SR20100HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SR20100PT C0G SR2020PT%20SERIES_J2103.pdf
SR20100PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
SR20100PTHC0G SR2020PT%20SERIES_H15.pdf
SR20100PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 20A TO247AD
Produkt ist nicht verfügbar
SFAF2004G C0G SFAF2001G%20SERIES_J2105.pdf
SFAF2004G C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
SFAF2004GHC0G SFAF2001G%20SERIES_J2105.pdf
SFAF2004GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
P6KE130CA A0G P6KE%20SERIES_O2109.pdf
P6KE130CA A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P6KE130CAHA0G P6KE%20SERIES_O2109.pdf
P6KE130CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P6KE130CA B0G P6KE%20SERIES_O2109.pdf
P6KE130CA B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P6KE130CAHB0G P6KE%20SERIES_O2109.pdf
P6KE130CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO204AC
Produkt ist nicht verfügbar
P4KE68A R0G P4KE%20SERIES_N2104.pdf
P4KE68A R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Produkt ist nicht verfügbar
P4KE68AHA0G P4KE%20SERIES_M1602.pdf
P4KE68AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8 R0G BZW04%20SERIES_I15.pdf
BZW04-5V8 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8B R0G BZW04%20SERIES_J2104.pdf
BZW04-5V8B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8HR0G BZW04%20SERIES_J2104.pdf
BZW04-5V8HR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8BHR0G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8 R1G BZW04%20SERIES_J2104.pdf
BZW04-5V8 R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8B R1G BZW04%20SERIES_J2104.pdf
BZW04-5V8B R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8BHR1G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8HR1G BZW04%20SERIES_J2104.pdf
BZW04-5V8HR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8 A0G BZW04%20SERIES_J2104.pdf
BZW04-5V8 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8B A0G BZW04%20SERIES_J2104.pdf
BZW04-5V8B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8BHA0G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8HA0G BZW04%20SERIES_J2104.pdf
BZW04-5V8HA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
BZW04-5V8 B0G BZW04%20SERIES_J2104.pdf
BZW04-5V8 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8B B0G BZW04%20SERIES_J2104.pdf
BZW04-5V8B B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
BZW04-5V8BHB0G BZW04%20SERIES_J2104.pdf
BZW04-5V8BHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZW04-5V8HB0G BZW04%20SERIES_J2104.pdf
BZW04-5V8HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Produkt ist nicht verfügbar
TSM6866SDCA RVG TSM6866SD_C15.pdf
TSM6866SDCA RVG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
TSM6866SDCA RVG TSM6866SD_C15.pdf
TSM6866SDCA RVG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
SRAS20150 MNG SRAS2020%20SERIES_L15.pdf
SRAS20150 MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 20A TO263AB
Produkt ist nicht verfügbar
SRAS20150HMNG SRAS2020%20SERIES_L15.pdf
SRAS20150HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 20A TO263AB
Produkt ist nicht verfügbar
RS3KB-T R5G
RS3KB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS3KB-T R5G
RS3KB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
Mindestbestellmenge: 24
S3KB M4G S3AB%20SERIES_L1705.pdf
S3KB M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
S3KBHM4G S3AB%20SERIES_L1705.pdf
S3KBHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
HS3KB M4G HS3AB%20SERIES_K1701.pdf
HS3KB M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
S3KBHR5G S3AB%20SERIES_M2102.pdf
S3KBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
RS3JB-T R5G RS3DB-T%20SERIES_C2102.pdf
RS3JB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS3JB-T R5G RS3DB-T%20SERIES_C2102.pdf
RS3JB-T R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
28+ 0.63 EUR
100+ 0.43 EUR
Mindestbestellmenge: 23
RS3J V7G RS3A%20SERIES_L2102.pdf
RS3J V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
auf Bestellung 1501 Stücke:
Lieferzeit 10-14 Tag (e)
RS3J R7G RS3A%20SERIES_L2102.pdf
RS3J R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
RS3J M6G RS3A%20SERIES_J1708.pdf
RS3J M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
RS3J V6G RS3A%20SERIES_J1708.pdf
RS3J V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
RS3JHM6G RS3A%20SERIES_J1708.pdf
RS3JHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Produkt ist nicht verfügbar
RS3JHR7G RS3A%20SERIES_L2102.pdf
RS3JHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
TSZU52C5V1 RGG TSZU52C2V0%20SERIES_F1601.pdf
TSZU52C5V1 RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW 0603
Produkt ist nicht verfügbar
SA58AHR0G SA%20SERIES_K1602.pdf
SA58AHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AC
Produkt ist nicht verfügbar
SA58CAHR0G SA%20SERIES_K1602.pdf
SA58CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AC
Produkt ist nicht verfügbar
TLD8S10AH pdf.php?pn=TLD8S10AH
TLD8S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.09 EUR
10+ 5.12 EUR
100+ 4.14 EUR
Mindestbestellmenge: 3
TLD5S10AH pdf.php?pn=TLD5S10AH
TLD5S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TLD6S10AH pdf.php?pn=TLD6S10AH
TLD6S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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