Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (22901) > Seite 187 nach 382
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SFF1005GAHC0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 10A ITO220AB |
Produkt ist nicht verfügbar |
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SFF1005GHC0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 10A ITO220AB |
Produkt ist nicht verfügbar |
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TS25P06G C2G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1P 800V 25A TS-6P |
Produkt ist nicht verfügbar |
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TS25P06GHC2G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1P 800V 25A TS-6P |
Produkt ist nicht verfügbar |
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TS25P06G-K C2G | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1P 800V 25A TS-6P |
Produkt ist nicht verfügbar |
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RABS15M RGG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1P 1KV 1.5A ABS-L |
Produkt ist nicht verfügbar |
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ABS15J RGG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 1.5A ABS |
Produkt ist nicht verfügbar |
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ABS15M RGG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS |
Produkt ist nicht verfügbar |
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ABS15JHRGG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 1.5A ABS |
Produkt ist nicht verfügbar |
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ABS15LJ RGG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 1.5A ABS |
Produkt ist nicht verfügbar |
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RABS15M REG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS-L Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RABS15M REG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS-L Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |
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SK520C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 200 V |
Produkt ist nicht verfügbar |
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SK520C V7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 5A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 200 V |
Produkt ist nicht verfügbar |
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SK520C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 200 V |
Produkt ist nicht verfügbar |
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SK520C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 5A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 300 µA @ 200 V |
Produkt ist nicht verfügbar |
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SK520C V6G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 5A 200V DO-214AB |
Produkt ist nicht verfügbar |
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SK52C R7G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
Produkt ist nicht verfügbar |
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SK52B M4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
Produkt ist nicht verfügbar |
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SMB10J20CAHR5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AA |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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SMB10J20CAHR5G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20VWM 32.4VC DO214AA |
auf Bestellung 3400 Stücke: Lieferzeit 10-14 Tag (e) |
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BZW06-171B R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 171VWM 353VC DO204AC |
Produkt ist nicht verfügbar |
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BZW06-171 A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 171VWM 353VC DO204AC |
Produkt ist nicht verfügbar |
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BZW06-171B A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 171VWM 353VC DO204AC |
Produkt ist nicht verfügbar |
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BZW06-171 B0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 171VWM 353VC DO204AC |
Produkt ist nicht verfügbar |
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BZW06-171B B0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 171VWM 353VC DO204AC |
Produkt ist nicht verfügbar |
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SMF8.0A RQG | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC SOD123W |
Produkt ist nicht verfügbar |
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SMF8.5A RQG | Taiwan Semiconductor Corporation | Description: TVS DIODE 8.5VWM 14.4VC SOD123W |
Produkt ist nicht verfügbar |
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SMF85A RQG | Taiwan Semiconductor Corporation | Description: TVS DIODE 85VWM 137VC SOD123W |
Produkt ist nicht verfügbar |
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SMF8.0AHRQG | Taiwan Semiconductor Corporation | Description: TVS DIODE 8VWM 13.6VC SOD123W |
Produkt ist nicht verfügbar |
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SMF8.5AHRQG | Taiwan Semiconductor Corporation | Description: TVS DIODE 8.5VWM 14.4VC SOD123W |
Produkt ist nicht verfügbar |
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SMF85AHRQG | Taiwan Semiconductor Corporation | Description: TVS DIODE 85VWM 137VC SOD123W |
Produkt ist nicht verfügbar |
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SMAJ170CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 170VWM 275VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.1A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMAJ170CAHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 170VWM 275VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.1A Voltage - Reverse Standoff (Typ): 170V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 189V Voltage - Clamping (Max) @ Ipp: 275V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SS26LHRVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ESH1DM RSG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A MICRO SMA Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 216000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESH1DM RSG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A MICRO SMA Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 218485 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX584B6V2 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 150MW SOD523F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523F Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
auf Bestellung 88000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX584B6V2 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 150MW SOD523F Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523F Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
auf Bestellung 98055 Stücke: Lieferzeit 10-14 Tag (e) |
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SF14G R1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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SF14GHR1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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SF14G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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SF14GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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SF14G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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SF14GHB0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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MTZJ4V7SA R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 4.56V 500MW DO34 |
Produkt ist nicht verfügbar |
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MTZJ4V7SB R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 4.68V 500MW DO34 |
Produkt ist nicht verfügbar |
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MTZJ4V7SC R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 4.81V 500MW DO34 |
Produkt ist nicht verfügbar |
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RS3K V6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 3A DO214AB |
Produkt ist nicht verfügbar |
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RS3K R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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RS3K M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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RS3KHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RS3KHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RS3K V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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BZT55C20 L0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 20V 500MW MINI MELF |
Produkt ist nicht verfügbar |
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BZT55C20 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 20V 500MW MINI MELF |
Produkt ist nicht verfügbar |
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BZT55C18 L0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 18V 500MW MINI MELF |
Produkt ist nicht verfügbar |
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BZT55C18 L1G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 18V 500MW MINI MELF |
Produkt ist nicht verfügbar |
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BZD27C43P RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.97% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
Produkt ist nicht verfügbar |
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BZD27C43P M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.97% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
Produkt ist nicht verfügbar |
SFF1005GAHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 10A ITO220AB
Description: DIODE GEN PURP 300V 10A ITO220AB
Produkt ist nicht verfügbar
SFF1005GHC0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 10A ITO220AB
Description: DIODE GEN PURP 300V 10A ITO220AB
Produkt ist nicht verfügbar
TS25P06G C2G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Description: BRIDGE RECT 1P 800V 25A TS-6P
Produkt ist nicht verfügbar
TS25P06GHC2G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Description: BRIDGE RECT 1P 800V 25A TS-6P
Produkt ist nicht verfügbar
TS25P06G-K C2G |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Description: BRIDGE RECT 1P 800V 25A TS-6P
Produkt ist nicht verfügbar
RABS15M RGG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Produkt ist nicht verfügbar
ABS15J RGG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Produkt ist nicht verfügbar
ABS15M RGG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
Produkt ist nicht verfügbar
ABS15JHRGG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Produkt ist nicht verfügbar
ABS15LJ RGG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Produkt ist nicht verfügbar
RABS15M REG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
RABS15M REG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
SK520C V7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
SK520C V7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
SK520C R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
SK520C R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
SK520C V6G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 200V DO-214AB
Description: DIODE SCHOTTKY 5A 200V DO-214AB
Produkt ist nicht verfügbar
SK52C R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
SK52B M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
SMB10J20CAHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Description: TVS DIODE 20VWM 32.4VC DO214AA
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)SMB10J20CAHR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Description: TVS DIODE 20VWM 32.4VC DO214AA
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)BZW06-171B R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
BZW06-171 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
BZW06-171B A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
BZW06-171 B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
BZW06-171B B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
SMF8.0A RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
Description: TVS DIODE 8VWM 13.6VC SOD123W
Produkt ist nicht verfügbar
SMF8.5A RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
Produkt ist nicht verfügbar
SMF85A RQG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC SOD123W
Description: TVS DIODE 85VWM 137VC SOD123W
Produkt ist nicht verfügbar
SMF8.0AHRQG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
Description: TVS DIODE 8VWM 13.6VC SOD123W
Produkt ist nicht verfügbar
SMF8.5AHRQG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
Produkt ist nicht verfügbar
SMF85AHRQG |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC SOD123W
Description: TVS DIODE 85VWM 137VC SOD123W
Produkt ist nicht verfügbar
SMAJ170CAHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ170CAHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SS26LHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ESH1DM RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 216000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.24 EUR |
9000+ | 0.22 EUR |
75000+ | 0.21 EUR |
ESH1DM RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 218485 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
28+ | 0.64 EUR |
100+ | 0.44 EUR |
500+ | 0.35 EUR |
1000+ | 0.28 EUR |
BZX584B6V2 RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 88000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.12 EUR |
16000+ | 0.1 EUR |
24000+ | 0.099 EUR |
56000+ | 0.082 EUR |
BZX584B6V2 RSG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 98055 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
38+ | 0.48 EUR |
100+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
2000+ | 0.12 EUR |
SF14G R1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SF14GHR1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SF14G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SF14GHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SF14G B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SF14GHB0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
MTZJ4V7SA R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.56V 500MW DO34
Description: DIODE ZENER 4.56V 500MW DO34
Produkt ist nicht verfügbar
MTZJ4V7SB R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.68V 500MW DO34
Description: DIODE ZENER 4.68V 500MW DO34
Produkt ist nicht verfügbar
MTZJ4V7SC R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.81V 500MW DO34
Description: DIODE ZENER 4.81V 500MW DO34
Produkt ist nicht verfügbar
RS3K V6G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Description: DIODE GEN PURP 800V 3A DO214AB
Produkt ist nicht verfügbar
RS3K R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
RS3K M6G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
RS3KHM6G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RS3KHR7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RS3K V7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
BZT55C20 L0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW MINI MELF
Description: DIODE ZENER 20V 500MW MINI MELF
Produkt ist nicht verfügbar
BZT55C20 L1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW MINI MELF
Description: DIODE ZENER 20V 500MW MINI MELF
Produkt ist nicht verfügbar
BZT55C18 L0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
Description: DIODE ZENER 18V 500MW MINI MELF
Produkt ist nicht verfügbar
BZT55C18 L1G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
Description: DIODE ZENER 18V 500MW MINI MELF
Produkt ist nicht verfügbar
BZD27C43P RHG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar
BZD27C43P M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Produkt ist nicht verfügbar