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BZY55B27 RYG BZY55B27 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 27V 500MW 0805
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BZY55B12 RYG BZY55B12 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 12V 500MW 0805
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TST20L60CW C0G TST20L60CW C0G Taiwan Semiconductor Corporation TST20L60CW_B2001.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
auf Bestellung 925 Stücke:
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KBP157G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBP157G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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TS431ACX RFG TS431ACX RFG Taiwan Semiconductor Corporation TS431_K2412.pdf Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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3000+0.20 EUR
6000+0.18 EUR
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KBP152G C2 Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBP152G C2G Taiwan Semiconductor Corporation KBP151G-KBP157G_D13_DS.pdf Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SMF6.5A RVG SMF6.5A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF6.5A RVG SMF6.5A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF6.5A RQG SMF6.5A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD123W
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SMF6.5AHRQG SMF6.5AHRQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMF6.5AHRVG SMF6.5AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1SMA5933 M2G 1SMA5933 M2G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
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1SMA5933HM2G 1SMA5933HM2G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
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1SMA5933 R3G 1SMA5933 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
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1SMA5933HR3G 1SMA5933HR3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 22V 1.5W DO214AC
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SFS1606G MNG SFS1606G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 400V 16A TO263AB
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SFS1608G MNG SFS1608G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 600V 16A TO263AB
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SFS1606GHMNG SFS1606GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 400V 16A TO263AB
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SFS1608GHMNG SFS1608GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 600V 16A TO263AB
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TWSES1DR2 Taiwan Semiconductor Corporation Description: TWSES1DR2
auf Bestellung 210600 Stücke:
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MMSZ5234B RHG MMSZ5234B RHG Taiwan Semiconductor Corporation MMSZ5221B%20series_H2007.pdf Description: DIODE ZENER 6.2V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
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SMF8.0AHRVG SMF8.0AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 8VWM 13.6VC SOD123W
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SMF8.0AHRVG SMF8.0AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 8VWM 13.6VC SOD123W
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TSM301K12CQ RFG TSM301K12CQ RFG Taiwan Semiconductor Corporation Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
auf Bestellung 3000 Stücke:
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3000+0.54 EUR
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TSM301K12CQ RFG TSM301K12CQ RFG Taiwan Semiconductor Corporation Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
auf Bestellung 6127 Stücke:
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100+0.86 EUR
500+0.72 EUR
1000+0.61 EUR
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P4KE120A R0G P4KE120A R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 102VWM 165VC DO204AL
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P4KE120AHR0G P4KE120AHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 102VWM 165VC DO204AL
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P4KE120CA R0G P4KE120CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 102VWM 165VC DO204AL
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P4KE120CAHR0G P4KE120CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 102VWM 165VC DO204AL
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SS22HM4G SS22HM4G Taiwan Semiconductor Corporation SS22%20SERIES_M2102.pdf Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
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SS22HR5G SS22HR5G Taiwan Semiconductor Corporation SS22%20SERIES_M2102.pdf Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
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TBS410 M1G TBS410 M1G Taiwan Semiconductor Corporation TBS406%20SERIES_A1904.pdf Description: 4A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 1800 Stücke:
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TBS410 M1G TBS410 M1G Taiwan Semiconductor Corporation TBS406%20SERIES_A1904.pdf Description: 4A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 1969 Stücke:
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HER3003PT C0G HER3003PT C0G Taiwan Semiconductor Corporation HER3001PT%20SERIES_I2103.pdf Description: DIODE ARRAY GP 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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1SMA5937 R3G 1SMA5937 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937 R3G 1SMA5937 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937 M2G 1SMA5937 M2G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937HM2G 1SMA5937HM2G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937HR3G 1SMA5937HR3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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TSM2306CX RFG TSM2306CX RFG Taiwan Semiconductor Corporation TSM2306_B15.pdf Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 60000 Stücke:
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3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
15000+0.31 EUR
21000+0.30 EUR
Mindestbestellmenge: 3000
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TSM2306CX RFG TSM2306CX RFG Taiwan Semiconductor Corporation TSM2306_B15.pdf Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 61190 Stücke:
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12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
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TSM2305CX RFG TSM2305CX RFG Taiwan Semiconductor Corporation TSM2305_E15.pdf Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 96000 Stücke:
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3000+0.28 EUR
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TSM2305CX RFG TSM2305CX RFG Taiwan Semiconductor Corporation TSM2305_E15.pdf Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 98725 Stücke:
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12+1.48 EUR
20+0.92 EUR
100+0.60 EUR
500+0.46 EUR
1000+0.41 EUR
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TSM220NB06CR RLG TSM220NB06CR RLG Taiwan Semiconductor Corporation TSM220NB06CR_C2401.pdf Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 7500 Stücke:
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TSM220NB06CR RLG TSM220NB06CR RLG Taiwan Semiconductor Corporation TSM220NB06CR_C2401.pdf Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 9176 Stücke:
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12+1.57 EUR
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100+0.73 EUR
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SMB10J15AHR5G SMB10J15AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
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SMB10J15AHR5G SMB10J15AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
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SK56CHR7G SK56CHR7G Taiwan Semiconductor Corporation SK52CH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SK56CHR7G SK56CHR7G Taiwan Semiconductor Corporation SK52CH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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S8JC R7G S8JC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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S8JCHR7G S8JCHR7G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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S8JCHR7G S8JCHR7G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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1PGSMA4742HR3G 1PGSMA4742HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 12V 1.25W DO214AC
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1PGSMA4742HR3G 1PGSMA4742HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 12V 1.25W DO214AC
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1PGSMA4741 R3G 1PGSMA4741 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 11V 1.25W DO214AC
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1PGSMA4741 R3G 1PGSMA4741 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 11V 1.25W DO214AC
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1PGSMA4745 R3G 1PGSMA4745 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 1800 Stücke:
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1800+0.29 EUR
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1PGSMA4745 R3G 1PGSMA4745 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 2600 Stücke:
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28+0.64 EUR
100+0.48 EUR
500+0.37 EUR
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BZY55B27 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B27 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B12 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B12 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 0805
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TST20L60CW C0G TST20L60CW_B2001.pdf
TST20L60CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
auf Bestellung 925 Stücke:
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KBP157G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBP157G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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TS431ACX RFG TS431_K2412.pdf
TS431ACX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000
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KBP152G C2 KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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KBP152G C2G KBP151G-KBP157G_D13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SMF6.5A RVG SMF5.0A%20SERIES_D2103.pdf
SMF6.5A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMF6.5A RVG SMF5.0A%20SERIES_D2103.pdf
SMF6.5A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 8 Stücke:
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SMF6.5A RQG SMF5.0A%20SERIES_B1709.pdf
SMF6.5A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
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SMF6.5AHRQG SMF5.0A%20SERIES_D2103.pdf
SMF6.5AHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMF6.5AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF6.5AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1SMA5933 M2G 1SMA5926%20SERIES_L2102.pdf
1SMA5933 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
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1SMA5933HM2G 1SMA5926%20SERIES_L2102.pdf
1SMA5933HM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
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1SMA5933 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5933 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
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1SMA5933HR3G 1SMA5926%20SERIES_L2102.pdf
1SMA5933HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
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SFS1606G MNG SFS1601G%20SERIES_N15.pdf
SFS1606G MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A TO263AB
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SFS1608G MNG SFS1601G%20SERIES_N15.pdf
SFS1608G MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A TO263AB
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SFS1606GHMNG SFS1601G%20SERIES_N15.pdf
SFS1606GHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A TO263AB
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SFS1608GHMNG SFS1601G%20SERIES_N15.pdf
SFS1608GHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A TO263AB
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TWSES1DR2
Hersteller: Taiwan Semiconductor Corporation
Description: TWSES1DR2
auf Bestellung 210600 Stücke:
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MMSZ5234B RHG MMSZ5221B%20series_H2007.pdf
MMSZ5234B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
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SMF8.0AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF8.0AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
auf Bestellung 3000 Stücke:
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SMF8.0AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF8.0AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
auf Bestellung 5960 Stücke:
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TSM301K12CQ RFG
TSM301K12CQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.54 EUR
Mindestbestellmenge: 3000
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TSM301K12CQ RFG
TSM301K12CQ RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
auf Bestellung 6127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
15+1.24 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
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P4KE120A R0G P4KE%20SERIES_M1602.pdf
P4KE120A R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Produkt ist nicht verfügbar
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P4KE120AHR0G P4KE%20SERIES_M1602.pdf
P4KE120AHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Produkt ist nicht verfügbar
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P4KE120CA R0G P4KE%20SERIES_M1602.pdf
P4KE120CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Produkt ist nicht verfügbar
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P4KE120CAHR0G P4KE%20SERIES_M1602.pdf
P4KE120CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Produkt ist nicht verfügbar
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SS22HM4G SS22%20SERIES_M2102.pdf
SS22HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS22HR5G SS22%20SERIES_M2102.pdf
SS22HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TBS410 M1G TBS406%20SERIES_A1904.pdf
TBS410 M1G
Hersteller: Taiwan Semiconductor Corporation
Description: 4A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
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TBS410 M1G TBS406%20SERIES_A1904.pdf
TBS410 M1G
Hersteller: Taiwan Semiconductor Corporation
Description: 4A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
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HER3003PT C0G HER3001PT%20SERIES_I2103.pdf
HER3003PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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1SMA5937 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5937 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
Produkt ist nicht verfügbar
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1SMA5937 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5937 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
Produkt ist nicht verfügbar
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1SMA5937 M2G 1SMA5926%20SERIES_L2102.pdf
1SMA5937 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
Produkt ist nicht verfügbar
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1SMA5937HM2G 1SMA5926%20SERIES_L2102.pdf
1SMA5937HM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
Produkt ist nicht verfügbar
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1SMA5937HR3G 1SMA5926%20SERIES_L2102.pdf
1SMA5937HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
Produkt ist nicht verfügbar
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TSM2306CX RFG TSM2306_B15.pdf
TSM2306CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
15000+0.31 EUR
21000+0.30 EUR
Mindestbestellmenge: 3000
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TSM2306CX RFG TSM2306_B15.pdf
TSM2306CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 61190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
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TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 98725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.60 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
TSM220NB06CR RLG TSM220NB06CR_C2401.pdf
TSM220NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
5000+0.44 EUR
Mindestbestellmenge: 2500
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TSM220NB06CR RLG TSM220NB06CR_C2401.pdf
TSM220NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 9176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
17+1.05 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 12
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SMB10J15AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J15AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
Produkt ist nicht verfügbar
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SMB10J15AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J15AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
auf Bestellung 820 Stücke:
Lieferzeit 10-14 Tag (e)
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SK56CHR7G SK52CH%20SERIES_B2212.pdf
SK56CHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK56CHR7G SK52CH%20SERIES_B2212.pdf
SK56CHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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S8JC R7G S8GC%20SERIES_G2210.pdf
S8JC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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S8JCHR7G S8GCH%20SERIES_B2210.pdf
S8JCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S8JCHR7G S8GCH%20SERIES_B2210.pdf
S8JCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4742HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4742HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1.25W DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4742HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4742HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1.25W DO214AC
auf Bestellung 2644 Stücke:
Lieferzeit 10-14 Tag (e)
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1PGSMA4741 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4741 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1.25W DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4741 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4741 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1.25W DO214AC
auf Bestellung 3523 Stücke:
Lieferzeit 10-14 Tag (e)
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1PGSMA4745 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.29 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4745 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.64 EUR
100+0.48 EUR
500+0.37 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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