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TBS410 M1G TBS410 M1G Taiwan Semiconductor Corporation TBS406%20SERIES_A1904.pdf Description: 4A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 1969 Stücke:
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HER3003PT C0G HER3003PT C0G Taiwan Semiconductor Corporation HER3001PT%20SERIES_I2103.pdf Description: DIODE ARRAY GP 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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1SMA5937 R3G 1SMA5937 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937 R3G 1SMA5937 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937 M2G 1SMA5937 M2G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937HM2G 1SMA5937HM2G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937HR3G 1SMA5937HR3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 33V 1.5W DO214AC
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TSM2306CX RFG TSM2306CX RFG Taiwan Semiconductor Corporation TSM2306_B15.pdf Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 60000 Stücke:
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3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
15000+0.31 EUR
21000+0.3 EUR
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TSM2306CX RFG TSM2306CX RFG Taiwan Semiconductor Corporation TSM2306_B15.pdf Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 61190 Stücke:
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12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
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TSM2305CX RFG TSM2305CX RFG Taiwan Semiconductor Corporation TSM2305_E15.pdf Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 96000 Stücke:
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TSM2305CX RFG TSM2305CX RFG Taiwan Semiconductor Corporation TSM2305_E15.pdf Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
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100+0.6 EUR
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TSM220NB06CR RLG TSM220NB06CR RLG Taiwan Semiconductor Corporation TSM220NB06CR_C2401.pdf Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 7500 Stücke:
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TSM220NB06CR RLG TSM220NB06CR RLG Taiwan Semiconductor Corporation TSM220NB06CR_C2401.pdf Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 9176 Stücke:
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100+0.73 EUR
500+0.58 EUR
1000+0.53 EUR
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SMB10J15AHR5G SMB10J15AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
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SMB10J15AHR5G SMB10J15AHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
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SK56CHR7G SK56CHR7G Taiwan Semiconductor Corporation SK52CH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SK56CHR7G SK56CHR7G Taiwan Semiconductor Corporation SK52CH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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S8JC R7G S8JC R7G Taiwan Semiconductor Corporation S8GC%20SERIES_G2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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S8JCHR7G S8JCHR7G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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S8JCHR7G S8JCHR7G Taiwan Semiconductor Corporation S8GCH%20SERIES_B2210.pdf Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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1PGSMA4742HR3G 1PGSMA4742HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 12V 1.25W DO214AC
auf Bestellung 1800 Stücke:
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1PGSMA4742HR3G 1PGSMA4742HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 12V 1.25W DO214AC
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1PGSMA4741 R3G 1PGSMA4741 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 11V 1.25W DO214AC
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1PGSMA4741 R3G 1PGSMA4741 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 11V 1.25W DO214AC
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1PGSMA4745 R3G 1PGSMA4745 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 1800 Stücke:
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1PGSMA4745 R3G 1PGSMA4745 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 2600 Stücke:
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1PGSMA4756 R3G 1PGSMA4756 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 47V 1.25W DO214AC
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1PGSMA4756 R3G 1PGSMA4756 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 47V 1.25W DO214AC
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1PGSMA4745HR3G 1PGSMA4745HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
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1PGSMA4745HR3G 1PGSMA4745HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
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SFF1005GA C0G SFF1005GA C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFF1005GAHC0G SFF1005GAHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
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SFF1005GHC0G SFF1005GHC0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_M2105.pdf Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS25P06G C2G TS25P06G C2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_Q2203.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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TS25P06GHC2G TS25P06GHC2G Taiwan Semiconductor Corporation TS25P01G%20SERIES_Q2203.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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TS25P06G-K C2G TS25P06G-K C2G Taiwan Semiconductor Corporation TS25P05G-K_TS25P07G-K_A1807.pdf Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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RABS15M RGG RABS15M RGG Taiwan Semiconductor Corporation RABS15M_C15.pdf Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
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ABS15J RGG ABS15J RGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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ABS15M RGG ABS15M RGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
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ABS15JHRGG ABS15JHRGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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ABS15LJ RGG ABS15LJ RGG Taiwan Semiconductor Corporation ABS15J%20SERIES_D15.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
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RABS15M REG RABS15M REG Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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RABS15M REG RABS15M REG Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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SK520C V7G SK520C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C V7G SK520C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C R7G SK520C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C R7G SK520C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C V6G SK520C V6G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 5A 200V DO-214AB
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SK52C R7G SK52C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 20V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SK52B M4G SK52B M4G Taiwan Semiconductor Corporation SK52B%20SERIES_P2102.pdf Description: DIODE SCHOTTKY 20V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SMB10J20CAHR5G SMB10J20CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
850+1.09 EUR
1700+1.02 EUR
2550+1 EUR
Mindestbestellmenge: 850
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SMB10J20CAHR5G SMB10J20CAHR5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6374 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
13+1.41 EUR
100+1 EUR
Mindestbestellmenge: 10
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BZW06-171B R0G BZW06-171B R0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171 A0G BZW06-171 A0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171B A0G BZW06-171B A0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171 B0G BZW06-171 B0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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BZW06-171B B0G BZW06-171B B0G Taiwan Semiconductor Corporation BZW06%20SERIES_K2105.pdf Description: TVS DIODE 171VWM 353VC DO204AC
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SMF8.0A RQG SMF8.0A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 8VWM 13.6VC SOD123W
Produkt ist nicht verfügbar
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SMF8.5A RQG SMF8.5A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 8.5VWM 14.4VC SOD123W
Produkt ist nicht verfügbar
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SMF85A RQG SMF85A RQG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_B1709.pdf Description: TVS DIODE 85VWM 137VC SOD123W
Produkt ist nicht verfügbar
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TBS410 M1G TBS406%20SERIES_A1904.pdf
TBS410 M1G
Hersteller: Taiwan Semiconductor Corporation
Description: 4A 1000V STANDARD BRIDGE RECTIFI
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
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HER3003PT C0G HER3001PT%20SERIES_I2103.pdf
HER3003PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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1SMA5937 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5937 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5937 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937 M2G 1SMA5926%20SERIES_L2102.pdf
1SMA5937 M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937HM2G 1SMA5926%20SERIES_L2102.pdf
1SMA5937HM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
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1SMA5937HR3G 1SMA5926%20SERIES_L2102.pdf
1SMA5937HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
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TSM2306CX RFG TSM2306_B15.pdf
TSM2306CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
15000+0.31 EUR
21000+0.3 EUR
Mindestbestellmenge: 3000
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TSM2306CX RFG TSM2306_B15.pdf
TSM2306CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 61190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
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TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 3.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
auf Bestellung 98725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 12
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TSM220NB06CR RLG TSM220NB06CR_C2401.pdf
TSM220NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
5000+0.44 EUR
Mindestbestellmenge: 2500
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TSM220NB06CR RLG TSM220NB06CR_C2401.pdf
TSM220NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V
auf Bestellung 9176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
17+1.05 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 12
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SMB10J15AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J15AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
Produkt ist nicht verfügbar
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SMB10J15AHR5G SMB10J%20SERIES_B2102.pdf
SMB10J15AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO214AA
auf Bestellung 820 Stücke:
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SK56CHR7G SK52CH%20SERIES_B2212.pdf
SK56CHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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SK56CHR7G SK52CH%20SERIES_B2212.pdf
SK56CHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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S8JC R7G S8GC%20SERIES_G2210.pdf
S8JC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S8JCHR7G S8GCH%20SERIES_B2210.pdf
S8JCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S8JCHR7G S8GCH%20SERIES_B2210.pdf
S8JCHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4742HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4742HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1.25W DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4742HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4742HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1.25W DO214AC
auf Bestellung 2644 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4741 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4741 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1.25W DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4741 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4741 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1.25W DO214AC
auf Bestellung 3523 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4745 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.29 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4745 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.64 EUR
100+0.48 EUR
500+0.37 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4756 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4756 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1.25W DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4756 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4756 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1.25W DO214AC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4745HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1PGSMA4745HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4745HR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
26+0.68 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
SFF1005GA C0G SFF1001G%20SERIES_M2105.pdf
SFF1005GA C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SFF1005GAHC0G SFF1001G%20SERIES_M2105.pdf
SFF1005GAHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SFF1005GHC0G SFF1001G%20SERIES_M2105.pdf
SFF1005GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TS25P06G C2G TS25P01G%20SERIES_Q2203.pdf
TS25P06G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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TS25P06GHC2G TS25P01G%20SERIES_Q2203.pdf
TS25P06GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS25P06G-K C2G TS25P05G-K_TS25P07G-K_A1807.pdf
TS25P06G-K C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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RABS15M RGG RABS15M_C15.pdf
RABS15M RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Produkt ist nicht verfügbar
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ABS15J RGG ABS15J%20SERIES_D15.pdf
ABS15J RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Produkt ist nicht verfügbar
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ABS15M RGG ABS15J%20SERIES_D15.pdf
ABS15M RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A ABS
Produkt ist nicht verfügbar
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ABS15JHRGG ABS15J%20SERIES_D15.pdf
ABS15JHRGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Produkt ist nicht verfügbar
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ABS15LJ RGG ABS15J%20SERIES_D15.pdf
ABS15LJ RGG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1.5A ABS
Produkt ist nicht verfügbar
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RABS15M REG
RABS15M REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RABS15M REG
RABS15M REG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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SK520C V7G SK52C%20SERIES_S2311.pdf
SK520C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C V7G SK52C%20SERIES_S2311.pdf
SK520C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C R7G SK52C%20SERIES_S2311.pdf
SK520C R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C R7G SK52C%20SERIES_S2311.pdf
SK520C R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Produkt ist nicht verfügbar
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SK520C V6G SK52C%20SERIES_Q2102.pdf
SK520C V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 200V DO-214AB
Produkt ist nicht verfügbar
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SK52C R7G SK52C%20SERIES_Q2102.pdf
SK52C R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SK52B M4G SK52B%20SERIES_P2102.pdf
SK52B M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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SMB10J20CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J20CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+1.09 EUR
1700+1.02 EUR
2550+1 EUR
Mindestbestellmenge: 850
Im Einkaufswagen  Stück im Wert von  UAH
SMB10J20CAHR5G SMB10J%20SERIES_B2102.pdf
SMB10J20CAHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
13+1.41 EUR
100+1 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BZW06-171B R0G BZW06%20SERIES_K2105.pdf
BZW06-171B R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
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BZW06-171 A0G BZW06%20SERIES_K2105.pdf
BZW06-171 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
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BZW06-171B A0G BZW06%20SERIES_K2105.pdf
BZW06-171B A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
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BZW06-171 B0G BZW06%20SERIES_K2105.pdf
BZW06-171 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
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BZW06-171B B0G BZW06%20SERIES_K2105.pdf
BZW06-171B B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 353VC DO204AC
Produkt ist nicht verfügbar
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SMF8.0A RQG SMF5.0A%20SERIES_B1709.pdf
SMF8.0A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
Produkt ist nicht verfügbar
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SMF8.5A RQG SMF5.0A%20SERIES_B1709.pdf
SMF8.5A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC SOD123W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMF85A RQG SMF5.0A%20SERIES_B1709.pdf
SMF85A RQG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC SOD123W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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