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BZW04-58 R0G BZW04-58 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
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PU2DMH M3G PU2DMH M3G Taiwan Semiconductor Corporation PU2BMH%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PU2DMH M3G PU2DMH M3G Taiwan Semiconductor Corporation PU2BMH%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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25+0.72 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.33 EUR
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TSM080NB03CR RLG TSM080NB03CR RLG Taiwan Semiconductor Corporation TSM080NB03CR_A1910.pdf Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
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TSM080NB03CR RLG TSM080NB03CR RLG Taiwan Semiconductor Corporation TSM080NB03CR_A1910.pdf Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
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TSM250NB06LDCR RLG TSM250NB06LDCR RLG Taiwan Semiconductor Corporation TSM250NB06LDCR_A2001.pdf Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
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TSM250NB06LDCR RLG TSM250NB06LDCR RLG Taiwan Semiconductor Corporation TSM250NB06LDCR_A2001.pdf Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
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TS79M05CP ROG TS79M05CP ROG Taiwan Semiconductor Corporation Description: IC REG LINEAR -5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
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SK55C R7G SK55C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK55C M6G SK55C M6G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK55CHM6G SK55CHM6G Taiwan Semiconductor Corporation SK52CH%20SERIES_C2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SK55CHR7G SK55CHR7G Taiwan Semiconductor Corporation SK52CH%20SERIES_C2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SK55C V6G SK55C V6G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK55C V7G SK55C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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1SMB5954 M4G 1SMB5954 M4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 160V 3W DO214AA
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1SMB5954HM4G 1SMB5954HM4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 160V 3W DO214AA
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1SMB5954 R5G 1SMB5954 R5G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_M2102.pdf Description: DIODE ZENER 160V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
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1SMB5954HR5G 1SMB5954HR5G Taiwan Semiconductor Corporation Description: DIODE ZENER 160V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
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SMA6J30AHR3G SMA6J30AHR3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AC
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SMA6J30AHR3G SMA6J30AHR3G Taiwan Semiconductor Corporation SMA6J%20SERIES_E2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AC
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SMB10J30A R5G SMB10J30A R5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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SMB10J30A R5G SMB10J30A R5G Taiwan Semiconductor Corporation SMB10J%20SERIES_B2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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TS20P07G C2G TS20P07G C2G Taiwan Semiconductor Corporation TS20P01G%20SERIES_M15.pdf Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
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TS20P07GHC2G TS20P07GHC2G Taiwan Semiconductor Corporation TS20P01G%20SERIES_M15.pdf Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
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MMBT3906L RFG MMBT3906L RFG Taiwan Semiconductor Corporation Description: TRANS PNP 40V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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MMBT3906L RFG MMBT3906L RFG Taiwan Semiconductor Corporation Description: TRANS PNP 40V 0.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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TSD1GH TSD1GH Taiwan Semiconductor Corporation TSD1GH_A2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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TSD1GH TSD1GH Taiwan Semiconductor Corporation TSD1GH_A2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
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GBU2507 D2 GBU2507 D2 Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 1KV 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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LL5819 L0G LL5819 L0G Taiwan Semiconductor Corporation LL5817 SERIES_I2006.pdf Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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LL5819-J0 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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P4SMA8.2A M2G P4SMA8.2A M2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AC
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1SMA4738HM2G 1SMA4738HM2G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Qualification: AEC-Q101
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SMCJ78A R7G SMCJ78A R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 78VWM 126VC DO214AB
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SR3050PT C0G SR3050PT C0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARRAY SCHOTTKY 50V TO247AD
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SR3050PTHC0G SR3050PTHC0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARRAY SCHOTTKY 50V TO247AD
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S1GBHM4G S1GBHM4G Taiwan Semiconductor Corporation S1AB%20SERIES_I2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
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S1GB R5G S1GB R5G Taiwan Semiconductor Corporation S1AB%20SERIES_I2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
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S1GBHR5G S1GBHR5G Taiwan Semiconductor Corporation S1AB%20SERIES_I2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
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BZX79B56 A0G BZX79B56 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_E2103.pdf Description: DIODE ZENER 56V 500MW DO35
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TLD8S24AH TLD8S24AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD8S24AH TLD8S24AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 231 Stücke:
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10+3.70 EUR
100+2.95 EUR
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MBR10H200CT C0G MBR10H200CT C0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE SCHOTTKY 200V 10A TO220AB
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TS2937CZ33 C0G TS2937CZ33 C0G Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 3.3V 500MA TO220
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TS2937CZ50 C0G TS2937CZ50 C0G Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
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10+3.31 EUR
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100+2.66 EUR
250+2.50 EUR
500+2.19 EUR
1000+1.81 EUR
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BZD27C30PW BZD27C30PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_D2203.pdf Description: DIODE ZENER 30V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
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10000+0.13 EUR
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MBS4 RCG MBS4 RCG Taiwan Semiconductor Corporation MBS2%20SERIES_P2103.pdf Description: BRIDGE RECT 1P 400V 800MA MBS
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SK33A R3G SK33A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_T1705.pdf Description: DIODE SCHOTTKY 30V 3A DO214AC
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SK33AHR3G SK33AHR3G Taiwan Semiconductor Corporation SK32A%20SERIES_T1705.pdf Description: DIODE SCHOTTKY 30V 3A DO214AC
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TSM4N90CZ C0G TSM4N90CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 900V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
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UDZS4V3B RRG UDZS4V3B RRG Taiwan Semiconductor Corporation UDZS3V6B%20SERIES_H2212.pdf Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
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BZY55C12 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 12V 500MW 0805
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BZY55C16 RYG BZY55C16 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 16V 500MW 0805
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BZY55C3V3 RYG BZY55C3V3 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3.3V 500MW 0805
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BZY55C3V6 RYG BZY55C3V6 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3.6V 500MW 0805
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BZY55C3V9 RYG BZY55C3V9 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 3.9V 500MW 0805
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BZY55B11 RYG BZY55B11 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 11V 500MW 0805
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BZY55B16 RYG BZY55B16 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 16V 500MW 0805
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BZY55B20 RYG BZY55B20 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 20V 500MW 0805
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BZY55B22 RYG BZY55B22 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 22V 500MW 0805
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BZW04-58 R0G BZW04%20SERIES_I15.pdf
BZW04-58 R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Produkt ist nicht verfügbar
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PU2DMH M3G PU2BMH%20SERIES_C2103.pdf
PU2DMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PU2DMH M3G PU2BMH%20SERIES_C2103.pdf
PU2DMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 5648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
25+0.72 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
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TSM080NB03CR RLG TSM080NB03CR_A1910.pdf
TSM080NB03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+0.45 EUR
5000+0.42 EUR
Mindestbestellmenge: 2500
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TSM080NB03CR RLG TSM080NB03CR_A1910.pdf
TSM080NB03CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
18+1.02 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.50 EUR
Mindestbestellmenge: 15
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TSM250NB06LDCR RLG TSM250NB06LDCR_A2001.pdf
TSM250NB06LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.80 EUR
Mindestbestellmenge: 2500
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TSM250NB06LDCR RLG TSM250NB06LDCR_A2001.pdf
TSM250NB06LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
auf Bestellung 4774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
11+1.61 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
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TS79M05CP ROG
TS79M05CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
Produkt ist nicht verfügbar
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SK55C R7G SK52C%20SERIES_S2311.pdf
SK55C R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SK55C M6G SK52C%20SERIES_S2311.pdf
SK55C M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SK55CHM6G SK52CH%20SERIES_C2311.pdf
SK55CHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK55CHR7G SK52CH%20SERIES_C2311.pdf
SK55CHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK55C V6G SK52C%20SERIES_S2311.pdf
SK55C V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK55C V7G SK52C%20SERIES_S2311.pdf
SK55C V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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1SMB5954 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5954 M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5954HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5954HM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Produkt ist nicht verfügbar
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1SMB5954 R5G 1SMB5926%20SERIES_M2102.pdf
1SMB5954 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
Produkt ist nicht verfügbar
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1SMB5954HR5G
1SMB5954HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
Produkt ist nicht verfügbar
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SMA6J30AHR3G SMA6J%20SERIES_E2102.pdf
SMA6J30AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AC
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
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SMA6J30AHR3G SMA6J%20SERIES_E2102.pdf
SMA6J30AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AC
auf Bestellung 4272 Stücke:
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SMB10J30A R5G SMB10J%20SERIES_B2102.pdf
SMB10J30A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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SMB10J30A R5G SMB10J%20SERIES_B2102.pdf
SMB10J30A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
11+1.61 EUR
100+1.13 EUR
Mindestbestellmenge: 8
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TS20P07G C2G TS20P01G%20SERIES_M15.pdf
TS20P07G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Produkt ist nicht verfügbar
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TS20P07GHC2G TS20P01G%20SERIES_M15.pdf
TS20P07GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Produkt ist nicht verfügbar
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MMBT3906L RFG
MMBT3906L RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.03 EUR
21000+0.03 EUR
30000+0.03 EUR
Mindestbestellmenge: 3000
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MMBT3906L RFG
MMBT3906L RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 65837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
192+0.09 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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TSD1GH TSD1GH_A2102.pdf
TSD1GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSD1GH TSD1GH_A2102.pdf
TSD1GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU2507 D2
GBU2507 D2
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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LL5819 L0G LL5817 SERIES_I2006.pdf
LL5819 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
Mindestbestellmenge: 5000
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LL5819-J0 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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P4SMA8.2A M2G P4SMA%20SERIES_S2102.pdf
P4SMA8.2A M2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02VWM 12.1VC DO214AC
Produkt ist nicht verfügbar
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1SMA4738HM2G 1SMA4737%20SERIES_P2102.pdf
1SMA4738HM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ78A R7G SMCJ SERIES_R2004.pdf
SMCJ78A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AB
Produkt ist nicht verfügbar
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SR3050PT C0G SR3020PT%20SERIES_H2103.pdf
SR3050PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Produkt ist nicht verfügbar
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SR3050PTHC0G SR3020PT%20SERIES_H2103.pdf
SR3050PTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Produkt ist nicht verfügbar
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S1GBHM4G S1AB%20SERIES_I2102.pdf
S1GBHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Produkt ist nicht verfügbar
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S1GB R5G S1AB%20SERIES_I2102.pdf
S1GB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Produkt ist nicht verfügbar
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S1GBHR5G S1AB%20SERIES_I2102.pdf
S1GBHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Produkt ist nicht verfügbar
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BZX79B56 A0G BZX79B2V4%20SERIES_E2103.pdf
BZX79B56 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
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TLD8S24AH TLD8S10AH SERIES_E2310.pdf
TLD8S24AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD8S24AH TLD8S10AH SERIES_E2310.pdf
TLD8S24AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+3.70 EUR
100+2.95 EUR
Mindestbestellmenge: 4
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MBR10H200CT C0G MBR1035CT%20SERIES_O2104.pdf
MBR10H200CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
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TS2937CZ33 C0G TS2937_E15.pdf
TS2937CZ33 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 500MA TO220
Produkt ist nicht verfügbar
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TS2937CZ50 C0G TS2937_E15.pdf
TS2937CZ50 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
auf Bestellung 3958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+3.31 EUR
25+3.12 EUR
100+2.66 EUR
250+2.50 EUR
500+2.19 EUR
1000+1.81 EUR
2500+1.77 EUR
Mindestbestellmenge: 5
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BZD27C30PW BZD27C11PW SERIES_D2203.pdf
BZD27C30PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
Mindestbestellmenge: 10000
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MBS4 RCG MBS2%20SERIES_P2103.pdf
MBS4 RCG
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 800MA MBS
auf Bestellung 944 Stücke:
Lieferzeit 10-14 Tag (e)
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SK33A R3G SK32A%20SERIES_T1705.pdf
SK33A R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AC
Produkt ist nicht verfügbar
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SK33AHR3G SK32A%20SERIES_T1705.pdf
SK33AHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AC
Produkt ist nicht verfügbar
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TSM4N90CZ C0G
TSM4N90CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
Produkt ist nicht verfügbar
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UDZS4V3B RRG UDZS3V6B%20SERIES_H2212.pdf
UDZS4V3B RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Produkt ist nicht verfügbar
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BZY55C12 RYG BZY55C2V4%20SERIES_D1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C16 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C16 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C3V3 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C3V3 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C3V6 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C3V6 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C3V9 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C3V9 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B11 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B11 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B16 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B16 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B20 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B20 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B22 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B22 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Produkt ist nicht verfügbar
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