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SFF2006GH SFF2006GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
50+ 1.66 EUR
100+ 1.32 EUR
500+ 1.12 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
ES2BFS ES2BFS Taiwan Semiconductor Corporation pdf.php?pn=ES2BFS Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
ES2BFS ES2BFS Taiwan Semiconductor Corporation pdf.php?pn=ES2BFS Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 6565 Stücke:
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24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 24
ES2BAL ES2BAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.19 EUR
7000+ 0.18 EUR
10500+ 0.17 EUR
Mindestbestellmenge: 3500
ES2BAL ES2BAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 13708 Stücke:
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25+0.72 EUR
32+ 0.55 EUR
100+ 0.33 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
ES2B ES2B Taiwan Semiconductor Corporation pdf.php?pn=ES2B Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
ES2BAH ES2BAH Taiwan Semiconductor Corporation pdf.php?pn=ES2BAH Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES2BH ES2BH Taiwan Semiconductor Corporation pdf.php?pn=ES2BH Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC68AH 1.5SMC68AH Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R7 1.5SMC68A R7 Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R6G 1.5SMC68A R6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R6 1.5SMC68A R6 Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5KE110CAH 1.5KE110CAH Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
1.5KE110AH 1.5KE110AH Taiwan Semiconductor Corporation Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSM60NC196CI C0G TSM60NC196CI C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC196CI Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
10+ 4.79 EUR
100+ 3.88 EUR
500+ 3.45 EUR
1000+ 2.95 EUR
2000+ 2.78 EUR
Mindestbestellmenge: 4
TSM60NC165CI C0G TSM60NC165CI C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC165CI Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.69 EUR
10+ 5.62 EUR
100+ 4.54 EUR
500+ 4.04 EUR
1000+ 3.46 EUR
2000+ 3.26 EUR
Mindestbestellmenge: 3
FR151G FR151G Taiwan Semiconductor Corporation FR151G-FR157G%20N0444%20REV.A.pdf Description: DIODE GEN PURP 50V 1.5A DO204AC
Produkt ist nicht verfügbar
FR151GH FR151GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1.5A DO204AC
Produkt ist nicht verfügbar
SMAJ36AH SMAJ36AH Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
TSM300NB06LDCR RLG TSM300NB06LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.7 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2500
TSM300NB06LDCR RLG TSM300NB06LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
13+ 1.39 EUR
100+ 1.08 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 11
TBS610 TBS610 Taiwan Semiconductor Corporation pdf.php?pn=TBS610 Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+1.09 EUR
Mindestbestellmenge: 1800
TBS610 TBS610 Taiwan Semiconductor Corporation pdf.php?pn=TBS610 Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
auf Bestellung 1829 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
10+ 2.04 EUR
100+ 1.58 EUR
500+ 1.34 EUR
Mindestbestellmenge: 8
SR303 SR303 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SR303H SR303H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
LL5817 L0G LL5817 L0G Taiwan Semiconductor Corporation pdf.php?pn=LL5817 Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
LL5817-J0 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 1A MELF
Produkt ist nicht verfügbar
LL5817 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
BZY55C36 RYG BZY55C36 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 36V 500MW 0805
Produkt ist nicht verfügbar
BZY55B10 RYG BZY55B10 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 10V 500MW 0805
Produkt ist nicht verfügbar
BZY55C33 RYG BZY55C33 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 33V 500MW 0805
Produkt ist nicht verfügbar
BZY55C4V3 RYG BZY55C4V3 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 4.3V 500MW 0805
Produkt ist nicht verfügbar
BZY55C18 RYG BZY55C18 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 18V 500MW 0805
Produkt ist nicht verfügbar
BZY55C9V1 RYG BZY55C9V1 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 9.1V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Produkt ist nicht verfügbar
BZY55C10 RYG BZY55C10 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 10V 500MW 0805
Produkt ist nicht verfügbar
BZY55B13 RYG BZY55B13 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 13V 500MW 0805
Produkt ist nicht verfügbar
BZY55B18 RYG BZY55B18 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 18V 500MW 0805
Produkt ist nicht verfügbar
BZY55C7V5 RYG BZY55C7V5 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 7.5V 500MW 0805
Produkt ist nicht verfügbar
BZY55B4V7 RYG BZY55B4V7 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 4.7V 500MW 0805
Produkt ist nicht verfügbar
BZY55B15 RYG BZY55B15 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 15V 500MW 0805
Produkt ist nicht verfügbar
BZY55B24 RYG BZY55B24 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 24V 500MW 0805
Produkt ist nicht verfügbar
BZY55C20 RYG BZY55C20 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 20V 500MW 0805
Produkt ist nicht verfügbar
BZY55C15 RYG BZY55C15 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 15V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
BZY55C22 RYG BZY55C22 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 22V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Produkt ist nicht verfügbar
BZY55B4V3 RYG BZY55B4V3 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 4.3V 500MW 0805
Produkt ist nicht verfügbar
BZY55C30 RYG BZY55C30 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 30V 500MW 0805
Produkt ist nicht verfügbar
BZY55B33 RYG BZY55B33 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 33V 500MW 0805
Produkt ist nicht verfügbar
TS15P03GH TS15P03GH Taiwan Semiconductor Corporation pdf.php?pn=TS15P03G Description: DIODE BRIDGE 15A 200V TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS15P03G TS15P03G Taiwan Semiconductor Corporation pdf.php?pn=TS15P03G Description: DIODE BRIDGE 15A 200V TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
TS15P03G C2G TS15P03G C2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
TS15P03G D2G TS15P03G D2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
TS15P03GHD2G TS15P03GHD2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS15P03GHC2G TS15P03GHC2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF48G SF48G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48GH SF48GH Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48G B0G SF48G B0G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48GHA0G SF48GHA0G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48GHB0G SF48GHB0G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
TLD6S12AH TLD6S12AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Produkt ist nicht verfügbar
TLD6S12AH TLD6S12AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Produkt ist nicht verfügbar
SFF2006GH
SFF2006GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
50+ 1.66 EUR
100+ 1.32 EUR
500+ 1.12 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
ES2BFS pdf.php?pn=ES2BFS
ES2BFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
ES2BFS pdf.php?pn=ES2BFS
ES2BFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 6565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
5000+ 0.19 EUR
Mindestbestellmenge: 24
ES2BAL
ES2BAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.19 EUR
7000+ 0.18 EUR
10500+ 0.17 EUR
Mindestbestellmenge: 3500
ES2BAL
ES2BAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 13708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
32+ 0.55 EUR
100+ 0.33 EUR
500+ 0.31 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
ES2B pdf.php?pn=ES2B
ES2B
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
ES2BAH pdf.php?pn=ES2BAH
ES2BAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ES2BH pdf.php?pn=ES2BH
ES2BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC68AH 1.5SMCH%20SERIES_B2207.pdf
1.5SMC68AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R7 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R6G 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A R6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5SMC68A R6 1.5SMC%20SERIES_S2207.pdf
1.5SMC68A R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1.5KE110CAH 1.5KE%20SERIES_O2104.pdf
1.5KE110CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
1.5KE110AH
1.5KE110AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TSM60NC196CI C0G pdf.php?pn=TSM60NC196CI
TSM60NC196CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.72 EUR
10+ 4.79 EUR
100+ 3.88 EUR
500+ 3.45 EUR
1000+ 2.95 EUR
2000+ 2.78 EUR
Mindestbestellmenge: 4
TSM60NC165CI C0G pdf.php?pn=TSM60NC165CI
TSM60NC165CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.69 EUR
10+ 5.62 EUR
100+ 4.54 EUR
500+ 4.04 EUR
1000+ 3.46 EUR
2000+ 3.26 EUR
Mindestbestellmenge: 3
FR151G FR151G-FR157G%20N0444%20REV.A.pdf
FR151G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Produkt ist nicht verfügbar
FR151GH
FR151GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Produkt ist nicht verfügbar
SMAJ36AH SMAJ%20SERIES_U2102.pdf
SMAJ36AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
TSM300NB06LDCR RLG
TSM300NB06LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.7 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2500
TSM300NB06LDCR RLG
TSM300NB06LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.69 EUR
13+ 1.39 EUR
100+ 1.08 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 11
TBS610 pdf.php?pn=TBS610
TBS610
Hersteller: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+1.09 EUR
Mindestbestellmenge: 1800
TBS610 pdf.php?pn=TBS610
TBS610
Hersteller: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
auf Bestellung 1829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.48 EUR
10+ 2.04 EUR
100+ 1.58 EUR
500+ 1.34 EUR
Mindestbestellmenge: 8
SR303
SR303
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
SR303H
SR303H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
LL5817 L0G pdf.php?pn=LL5817
LL5817 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
LL5817-J0 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Produkt ist nicht verfügbar
LL5817 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
BZY55C36 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C36 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 0805
Produkt ist nicht verfügbar
BZY55B10 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B10 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
Produkt ist nicht verfügbar
BZY55C33 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C33 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 0805
Produkt ist nicht verfügbar
BZY55C4V3 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C4V3 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
Produkt ist nicht verfügbar
BZY55C18 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C18 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
Produkt ist nicht verfügbar
BZY55C9V1 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C9V1 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Produkt ist nicht verfügbar
BZY55C10 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C10 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
Produkt ist nicht verfügbar
BZY55B13 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B13 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW 0805
Produkt ist nicht verfügbar
BZY55B18 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B18 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
Produkt ist nicht verfügbar
BZY55C7V5 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C7V5 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 0805
Produkt ist nicht verfügbar
BZY55B4V7 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B4V7 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW 0805
Produkt ist nicht verfügbar
BZY55B15 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B15 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
Produkt ist nicht verfügbar
BZY55B24 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B24 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 0805
Produkt ist nicht verfügbar
BZY55C20 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C20 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
Produkt ist nicht verfügbar
BZY55C15 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C15 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
BZY55C22 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C22 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: 0805
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Produkt ist nicht verfügbar
BZY55B4V3 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B4V3 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
Produkt ist nicht verfügbar
BZY55C30 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C30 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW 0805
Produkt ist nicht verfügbar
BZY55B33 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B33 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 0805
Produkt ist nicht verfügbar
TS15P03GH pdf.php?pn=TS15P03G
TS15P03GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 15A 200V TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS15P03G pdf.php?pn=TS15P03G
TS15P03G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 15A 200V TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
TS15P03G C2G TS15P01G%20SERIES_N2203.pdf
TS15P03G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
TS15P03G D2G TS15P01G%20SERIES_N2203.pdf
TS15P03G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
TS15P03GHD2G TS15P01G%20SERIES_N2203.pdf
TS15P03GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
TS15P03GHC2G TS15P01G%20SERIES_N2203.pdf
TS15P03GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SF48G SF41G%20SERIES_G2105.pdf
SF48G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48GH SF41G%20SERIES_G2105.pdf
SF48GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48G B0G SF41G%20SERIES_G2105.pdf
SF48G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48GHA0G SF41G%20SERIES_G2105.pdf
SF48GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
SF48GHB0G SF41G%20SERIES_G2105.pdf
SF48GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
TLD6S12AH TLD6S10AH SERIES_D2103.pdf
TLD6S12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO218AB
Produkt ist nicht verfügbar
TLD6S12AH TLD6S10AH SERIES_D2103.pdf
TLD6S12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO218AB
Produkt ist nicht verfügbar
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