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S1JLS RVG S1JLS RVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 3000
S1JLS RVG S1JLS RVG Taiwan Semiconductor Corporation S1DLS%20SERIES_H2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11945 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 24
UG8JH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
TSM60N750CP ROG TSM60N750CP ROG Taiwan Semiconductor Corporation TSM60N750_A14.pdf Description: MOSFET N-CHANNEL 600V 6A TO252
Produkt ist nicht verfügbar
TSM60N750CP ROG TSM60N750CP ROG Taiwan Semiconductor Corporation TSM60N750_A14.pdf Description: MOSFET N-CHANNEL 600V 6A TO252
Produkt ist nicht verfügbar
TSM60N750CH C5G TSM60N750CH C5G Taiwan Semiconductor Corporation TSM60N750_A14.pdf Description: MOSFET N-CHANNEL 600V 6A TO251
Produkt ist nicht verfügbar
TSN520M60 TSN520M60 Taiwan Semiconductor Corporation TSN520M60_H2103.pdf Description: DIODE SCHOTTKY 60V 20A 8DFN
Produkt ist nicht verfügbar
TSN520M60 TSN520M60 Taiwan Semiconductor Corporation TSN520M60_H2103.pdf Description: DIODE SCHOTTKY 60V 20A 8DFN
Produkt ist nicht verfügbar
TSN520M60 S4G TSN520M60 S4G Taiwan Semiconductor Corporation TSN520M60_H2103.pdf Description: DIODE GEN PURP 60V 20A 8DFN
Produkt ist nicht verfügbar
MUR140SH MUR140SH Taiwan Semiconductor Corporation MUR105SH SERIES_A2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
MUR140S MUR140S Taiwan Semiconductor Corporation MUR105S SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
GBPC25005W T0G GBPC25005W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_L2103.pdf Description: BRIDGE RECT 1P 50V 25A GBPC-W
Produkt ist nicht verfügbar
GBPC25005 T0G GBPC25005 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_L2103.pdf Description: BRIDGE RECT 1PHASE 50V 25A GBPC
Produkt ist nicht verfügbar
GBPC25005M T0G GBPC25005M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_L2103.pdf Description: BRIDGE RECT 1P 50V 25A GBPC-M
Produkt ist nicht verfügbar
TS40P06G TS40P06G Taiwan Semiconductor Corporation TS40P05G%20SERIES_G2203.pdf Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
TS40P06GH TS40P06GH Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
15+ 3.09 EUR
105+ 2.46 EUR
510+ 2.08 EUR
1005+ 1.77 EUR
Mindestbestellmenge: 5
SA12CAH SA12CAH Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 12VWM 19.9VC DO204AC
Produkt ist nicht verfügbar
SF1004G SF1004G Taiwan Semiconductor Corporation SF1001G%20SERIES_K2104.pdf Description: DIODE GEN PURP 200V 10A TO220AB
Produkt ist nicht verfügbar
SMAJ150CAH SMAJ150CAH Taiwan Semiconductor Corporation pdf.php?pn=SMAJ150CAH Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ150CA R3G SMAJ150CA R3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 150VWM 243VC DO214AC
Produkt ist nicht verfügbar
ESH3DFSH ESH3DFSH Taiwan Semiconductor Corporation pdf.php?pn=ESH3DFSH Description: DIODE GEN PURP 200V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
14000+0.25 EUR
Mindestbestellmenge: 14000
ESH3DFSH ESH3DFSH Taiwan Semiconductor Corporation pdf.php?pn=ESH3DFSH Description: DIODE GEN PURP 200V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 27929 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
2000+ 0.28 EUR
5000+ 0.27 EUR
Mindestbestellmenge: 22
ESH3D R7G ESH3D R7G Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D V7G ESH3D V7G Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
SK32AHM2G SK32AHM2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 20V 3A DO214AC
Produkt ist nicht verfügbar
TSF20U60C TSF20U60C Taiwan Semiconductor Corporation MBR20xxCT_Rev.L13.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.49 EUR
10+ 4.02 EUR
100+ 3.23 EUR
500+ 2.66 EUR
Mindestbestellmenge: 4
TST20U60CW TST20U60CW Taiwan Semiconductor Corporation TST20U45CW-TST20U60CW_C2104.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
Produkt ist nicht verfügbar
GBU402H GBU402H Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: DIODE BRIDGE 4A 100V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
GBU403 GBU403 Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: DIODE BRIDGE 4A 200V GBU
Produkt ist nicht verfügbar
GBU403H GBU403H Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: DIODE BRIDGE 4A 200V GBU
Produkt ist nicht verfügbar
MBRF10H100CT MBRF10H100CT Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
TS4K60 TS4K60 Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 600V 4A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
20+ 1.28 EUR
100+ 0.89 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
TS20P05G TS20P05G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2438 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
15+ 2.04 EUR
105+ 1.62 EUR
510+ 1.37 EUR
1005+ 1.16 EUR
2010+ 1.11 EUR
Mindestbestellmenge: 8
TS35P05G TS35P05G Taiwan Semiconductor Corporation TS35P05G SERIES_F2203.pdf Description: BRIDGE RECT 1P 600V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
15+ 2.99 EUR
105+ 2.38 EUR
510+ 2.01 EUR
Mindestbestellmenge: 5
TS6P05G TS6P05G Taiwan Semiconductor Corporation TS6P01G%20SERIES_M2203.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
TS15P06G TS15P06G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1P 800V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
15+ 2.18 EUR
105+ 1.7 EUR
510+ 1.44 EUR
Mindestbestellmenge: 7
TSI20H100CW TSI20H100CW Taiwan Semiconductor Corporation TSI20H100CW-TSI20H200CW_E2104.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.49 EUR
10+ 4.03 EUR
100+ 3.3 EUR
500+ 2.81 EUR
Mindestbestellmenge: 4
TSD20H100CW TSD20H100CW Taiwan Semiconductor Corporation TSD20H100CW%20SERIES_G2103.pdf Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
Produkt ist nicht verfügbar
TSD20H100CW TSD20H100CW Taiwan Semiconductor Corporation TSD20H100CW%20SERIES_G2103.pdf Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
10+ 3.59 EUR
100+ 2.89 EUR
Mindestbestellmenge: 5
SF68G SF68G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 6A 600V DO-201AD
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.65 EUR
Mindestbestellmenge: 1250
TSM076NH04LDCR RLG TSM076NH04LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM076NH04LDCR RLG TSM076NH04LDCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
10+ 2.05 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 8
TSM076NH04DCR RLG TSM076NH04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM076NH04DCR RLG TSM076NH04DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 4678 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
10+ 2.05 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 8
MTZJ22SA R0G MTZJ22SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 20.68V 500MW DO34
Produkt ist nicht verfügbar
MTZJ47S R0G MTZJ47S R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 46.5V 500MW DO34
Produkt ist nicht verfügbar
MTZJ7V5SA R0G MTZJ7V5SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 7.04V 500MW DO34
Produkt ist nicht verfügbar
MTZJ22SD R0G MTZJ22SD R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 22.08V 500MW DO34
Produkt ist nicht verfügbar
MTZJ4V3SB R0G MTZJ4V3SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.3V 500MW DO34
Produkt ist nicht verfügbar
MTZJ6V2SB R0G MTZJ6V2SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 6.12V 500MW DO34
Produkt ist nicht verfügbar
MTZJ20SD R0G MTZJ20SD R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 20.22V 500MW DO34
Produkt ist nicht verfügbar
KBP201G C2G Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
KBP201G C2 Taiwan Semiconductor Corporation KBP201G-KBP207G%20_E13_DS.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
1KSMB15CAH 1KSMB15CAH Taiwan Semiconductor Corporation pdf.php?pn=1KSMB15CAH Description: TVS DIODE 12.8VWM 21.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 47.2A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HER301G HER301G Taiwan Semiconductor Corporation pdf.php?pn=HER301G Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
SMCJ18CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
S1JLS RVG S1DLS%20SERIES_H2103.pdf
S1JLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 3000
S1JLS RVG S1DLS%20SERIES_H2103.pdf
S1JLS RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 24
UG8JH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
TSM60N750CP ROG TSM60N750_A14.pdf
TSM60N750CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Produkt ist nicht verfügbar
TSM60N750CP ROG TSM60N750_A14.pdf
TSM60N750CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Produkt ist nicht verfügbar
TSM60N750CH C5G TSM60N750_A14.pdf
TSM60N750CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO251
Produkt ist nicht verfügbar
TSN520M60 TSN520M60_H2103.pdf
TSN520M60
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A 8DFN
Produkt ist nicht verfügbar
TSN520M60 TSN520M60_H2103.pdf
TSN520M60
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A 8DFN
Produkt ist nicht verfügbar
TSN520M60 S4G TSN520M60_H2103.pdf
TSN520M60 S4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 60V 20A 8DFN
Produkt ist nicht verfügbar
MUR140SH MUR105SH SERIES_A2102.pdf
MUR140SH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
MUR140S MUR105S SERIES_L2102.pdf
MUR140S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
GBPC25005W T0G GBPC15_25_35%20SERIES_L2103.pdf
GBPC25005W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Produkt ist nicht verfügbar
GBPC25005 T0G GBPC15_25_35%20SERIES_L2103.pdf
GBPC25005 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 25A GBPC
Produkt ist nicht verfügbar
GBPC25005M T0G GBPC15_25_35%20SERIES_L2103.pdf
GBPC25005M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 25A GBPC-M
Produkt ist nicht verfügbar
TS40P06G TS40P05G%20SERIES_G2203.pdf
TS40P06G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
TS40P06GH
TS40P06GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 40A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.71 EUR
15+ 3.09 EUR
105+ 2.46 EUR
510+ 2.08 EUR
1005+ 1.77 EUR
Mindestbestellmenge: 5
SA12CAH SA%20SERIES_L2105.pdf
SA12CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO204AC
Produkt ist nicht verfügbar
SF1004G SF1001G%20SERIES_K2104.pdf
SF1004G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
Produkt ist nicht verfügbar
SMAJ150CAH pdf.php?pn=SMAJ150CAH
SMAJ150CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMAJ150CA R3G SMAJ%20SERIES_U2102.pdf
SMAJ150CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Produkt ist nicht verfügbar
ESH3DFSH pdf.php?pn=ESH3DFSH
ESH3DFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.25 EUR
Mindestbestellmenge: 14000
ESH3DFSH pdf.php?pn=ESH3DFSH
ESH3DFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 27929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
2000+ 0.28 EUR
5000+ 0.27 EUR
Mindestbestellmenge: 22
ESH3D R7G ESH3B%20SERIES_I2102.pdf
ESH3D R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D M6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
ESH3D V7G ESH3B%20SERIES_I2102.pdf
ESH3D V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Produkt ist nicht verfügbar
SK32AHM2G SK32A%20SERIES_V2102.pdf
SK32AHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO214AC
Produkt ist nicht verfügbar
TSF20U60C MBR20xxCT_Rev.L13.pdf
TSF20U60C
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.49 EUR
10+ 4.02 EUR
100+ 3.23 EUR
500+ 2.66 EUR
Mindestbestellmenge: 4
TST20U60CW TST20U45CW-TST20U60CW_C2104.pdf
TST20U60CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Produkt ist nicht verfügbar
GBU402H GBU401%20SERIES_M2103.pdf
GBU402H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 100V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
GBU403 GBU401%20SERIES_M2103.pdf
GBU403
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 200V GBU
Produkt ist nicht verfügbar
GBU403H GBU401%20SERIES_M2103.pdf
GBU403H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 4A 200V GBU
Produkt ist nicht verfügbar
MBRF10H100CT MBRF1035CT%20SERIES_M2105.pdf
MBRF10H100CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
TS4K60
TS4K60
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A TS4K
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS4K
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
20+ 1.28 EUR
100+ 0.89 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
TS20P05G
TS20P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
15+ 2.04 EUR
105+ 1.62 EUR
510+ 1.37 EUR
1005+ 1.16 EUR
2010+ 1.11 EUR
Mindestbestellmenge: 8
TS35P05G TS35P05G SERIES_F2203.pdf
TS35P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.59 EUR
15+ 2.99 EUR
105+ 2.38 EUR
510+ 2.01 EUR
Mindestbestellmenge: 5
TS6P05G TS6P01G%20SERIES_M2203.pdf
TS6P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
TS15P06G
TS15P06G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.66 EUR
15+ 2.18 EUR
105+ 1.7 EUR
510+ 1.44 EUR
Mindestbestellmenge: 7
TSI20H100CW TSI20H100CW-TSI20H200CW_E2104.pdf
TSI20H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.49 EUR
10+ 4.03 EUR
100+ 3.3 EUR
500+ 2.81 EUR
Mindestbestellmenge: 4
TSD20H100CW TSD20H100CW%20SERIES_G2103.pdf
TSD20H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
Produkt ist nicht verfügbar
TSD20H100CW TSD20H100CW%20SERIES_G2103.pdf
TSD20H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, SCHOTTKY, TRENCH, 20A, 10
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4 EUR
10+ 3.59 EUR
100+ 2.89 EUR
Mindestbestellmenge: 5
SF68G
SF68G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 6A 600V DO-201AD
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.65 EUR
Mindestbestellmenge: 1250
TSM076NH04LDCR RLG
TSM076NH04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM076NH04LDCR RLG
TSM076NH04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.05 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 8
TSM076NH04DCR RLG
TSM076NH04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Produkt ist nicht verfügbar
TSM076NH04DCR RLG
TSM076NH04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
auf Bestellung 4678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.05 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 8
MTZJ22SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ22SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20.68V 500MW DO34
Produkt ist nicht verfügbar
MTZJ47S R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ47S R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 46.5V 500MW DO34
Produkt ist nicht verfügbar
MTZJ7V5SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ7V5SA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.04V 500MW DO34
Produkt ist nicht verfügbar
MTZJ22SD R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ22SD R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.08V 500MW DO34
Produkt ist nicht verfügbar
MTZJ4V3SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V3SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO34
Produkt ist nicht verfügbar
MTZJ6V2SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ6V2SB R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.12V 500MW DO34
Produkt ist nicht verfügbar
MTZJ20SD R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ20SD R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20.22V 500MW DO34
Produkt ist nicht verfügbar
KBP201G C2G KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
KBP201G C2 KBP201G-KBP207G%20_E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
1KSMB15CAH pdf.php?pn=1KSMB15CAH
1KSMB15CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 47.2A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
HER301G pdf.php?pn=HER301G
HER301G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
SMCJ18CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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