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1.5KE110AH 1.5KE110AH Taiwan Semiconductor Corporation Description: TVS DIODE 94VWM 152VC DO201
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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TSM60NC196CI C0G TSM60NC196CI C0G Taiwan Semiconductor Corporation TSM60NC196CI_B2209.pdf Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
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10+4.59 EUR
100+3.26 EUR
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TSM60NC165CI C0G TSM60NC165CI C0G Taiwan Semiconductor Corporation TSM60NC165CI_B2209.pdf Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
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100+3.61 EUR
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FR151GH FR151GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 1.5A DO204AC
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SMAJ36AH SMAJ36AH Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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57+0.37 EUR
100+0.32 EUR
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TSM300NB06LDCR RLG TSM300NB06LDCR RLG Taiwan Semiconductor Corporation TSM300NB06LDCR_A2004.pdf Description: MOSFET 2N-CH 60V 5A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM300NB06LDCR RLG TSM300NB06LDCR RLG Taiwan Semiconductor Corporation TSM300NB06LDCR_A2004.pdf Description: MOSFET 2N-CH 60V 5A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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11+2.01 EUR
100+1.34 EUR
500+1.06 EUR
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TBS610 TBS610 Taiwan Semiconductor Corporation pdf.php?pn=TBS610 Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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TBS610 TBS610 Taiwan Semiconductor Corporation pdf.php?pn=TBS610 Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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10+2.43 EUR
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SR303 SR303 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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SR303H SR303H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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LL5817 L0G LL5817 L0G Taiwan Semiconductor Corporation LL5817 SERIES_I2006.pdf Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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LL5817-J0 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 1A MELF
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LL5817 L0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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BZY55C36 RYG BZY55C36 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 36V 500MW 0805
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BZY55B10 RYG BZY55B10 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 10V 500MW 0805
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BZY55C33 RYG BZY55C33 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 33V 500MW 0805
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BZY55C4V3 RYG BZY55C4V3 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 4.3V 500MW 0805
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BZY55C18 RYG BZY55C18 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 18V 500MW 0805
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BZY55C9V1 RYG BZY55C9V1 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 9.1V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZY55C10 RYG BZY55C10 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 10V 500MW 0805
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BZY55B13 RYG BZY55B13 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 13V 500MW 0805
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BZY55B18 RYG BZY55B18 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 18V 500MW 0805
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BZY55C7V5 RYG BZY55C7V5 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 7.5V 500MW 0805
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BZY55B4V7 RYG BZY55B4V7 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 4.7V 500MW 0805
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BZY55B15 RYG BZY55B15 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 15V 500MW 0805
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BZY55B24 RYG BZY55B24 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 24V 500MW 0805
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BZY55C20 RYG BZY55C20 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 20V 500MW 0805
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BZY55C15 RYG BZY55C15 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 15V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZY55C22 RYG BZY55C22 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 22V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BZY55B4V3 RYG BZY55B4V3 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 4.3V 500MW 0805
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BZY55C30 RYG BZY55C30 RYG Taiwan Semiconductor Corporation BZY55C2V4%20SERIES_D1612.pdf Description: DIODE ZENER 30V 500MW 0805
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BZY55B33 RYG BZY55B33 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 33V 500MW 0805
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TS15P03GH TS15P03GH Taiwan Semiconductor Corporation pdf.php?pn=TS15P03G Description: DIODE BRIDGE 15A 200V TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS15P03G TS15P03G Taiwan Semiconductor Corporation pdf.php?pn=TS15P03G Description: DIODE BRIDGE 15A 200V TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS15P03G C2G TS15P03G C2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS15P03G D2G TS15P03G D2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS15P03GHD2G TS15P03GHD2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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TS15P03GHC2G TS15P03GHC2G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 200V 15A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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SF48G SF48G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
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SF48GH SF48GH Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
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SF48G B0G SF48G B0G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
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SF48GHA0G SF48GHA0G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
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SF48GHB0G SF48GHB0G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 600V 4A DO201AD
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TLD6S12AH TLD6S12AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
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TLD6S12AH TLD6S12AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
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SS1H10LS SS1H10LS Taiwan Semiconductor Corporation SS1H4LS SERIES_C2208.pdf Description: DIODE SCHOTTKY 100V 1A SOD123HE
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
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SS1H10LS SS1H10LS Taiwan Semiconductor Corporation SS1H4LS SERIES_C2208.pdf Description: DIODE SCHOTTKY 100V 1A SOD123HE
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
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TSP10U120S TSP10U120S Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 120V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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TSP10U120S TSP10U120S Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 120V 10A TO277A
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
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DBLS206GH DBLS206GH Taiwan Semiconductor Corporation DBLS201G SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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DBLS205GH DBLS205GH Taiwan Semiconductor Corporation DBLS201G SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SF27GH SF27GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Qualification: AEC-Q101
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SF27G SF27G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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RS1AL MTG RS1AL MTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1AL RFG RS1AL RFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1AL MHG RS1AL MHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1AL RQG RS1AL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1ALHM2G RS1ALHM2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1ALHRHG RS1ALHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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1.5KE110AH
1.5KE110AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO201
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 10.3A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TSM60NC196CI C0G TSM60NC196CI_B2209.pdf
TSM60NC196CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
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TSM60NC165CI C0G TSM60NC165CI_B2209.pdf
TSM60NC165CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
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FR151GH
FR151GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Produkt ist nicht verfügbar
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SMAJ36AH SMAJH%20SERIES_A2102.pdf
SMAJ36AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TSM300NB06LDCR RLG TSM300NB06LDCR_A2004.pdf
TSM300NB06LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM300NB06LDCR RLG TSM300NB06LDCR_A2004.pdf
TSM300NB06LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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TBS610 pdf.php?pn=TBS610
TBS610
Hersteller: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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TBS610 pdf.php?pn=TBS610
TBS610
Hersteller: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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SR303
SR303
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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SR303H
SR303H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LL5817 L0G LL5817 SERIES_I2006.pdf
LL5817 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LL5817-J0 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
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LL5817 L0
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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BZY55C36 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C36 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B10 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B10 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C33 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C33 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C4V3 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C4V3 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C18 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C18 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C9V1 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C9V1 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZY55C10 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C10 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZY55B13 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B13 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW 0805
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BZY55B18 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B18 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZY55C7V5 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C7V5 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZY55B4V7 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B4V7 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B15 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B15 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B24 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B24 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZY55C20 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C20 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C15 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C15 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZY55C22 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C22 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: 0805
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZY55B4V3 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B4V3 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 0805
Produkt ist nicht verfügbar
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BZY55C30 RYG BZY55C2V4%20SERIES_D1612.pdf
BZY55C30 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW 0805
Produkt ist nicht verfügbar
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BZY55B33 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B33 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 0805
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TS15P03GH pdf.php?pn=TS15P03G
TS15P03GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 15A 200V TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS15P03G pdf.php?pn=TS15P03G
TS15P03G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 15A 200V TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS15P03G C2G TS15P01G%20SERIES_N2203.pdf
TS15P03G C2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS15P03G D2G TS15P01G%20SERIES_N2203.pdf
TS15P03G D2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS15P03GHD2G TS15P01G%20SERIES_N2203.pdf
TS15P03GHD2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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TS15P03GHC2G TS15P01G%20SERIES_N2203.pdf
TS15P03GHC2G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A TS-6P
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Grade: Automotive
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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SF48G SF41G%20SERIES_G2105.pdf
SF48G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SF48GH SF41G%20SERIES_G2105.pdf
SF48GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SF48G B0G SF41G%20SERIES_G2105.pdf
SF48G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
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SF48GHA0G SF41G%20SERIES_G2105.pdf
SF48GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
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SF48GHB0G SF41G%20SERIES_G2105.pdf
SF48GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Produkt ist nicht verfügbar
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TLD6S12AH TLD6S10AH SERIES_D2103.pdf
TLD6S12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO218AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLD6S12AH TLD6S10AH SERIES_D2103.pdf
TLD6S12AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO218AB
Produkt ist nicht verfügbar
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SS1H10LS SS1H4LS SERIES_C2208.pdf
SS1H10LS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SOD123HE
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SS1H10LS SS1H4LS SERIES_C2208.pdf
SS1H10LS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SOD123HE
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
auf Bestellung 8307 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
34+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
2000+0.24 EUR
5000+0.21 EUR
Mindestbestellmenge: 21 Stücke
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TSP10U120S
TSP10U120S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 10A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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TSP10U120S
TSP10U120S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 10A TO277A
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
auf Bestellung 838 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
10+2.77 EUR
100+1.88 EUR
500+1.5 EUR
Mindestbestellmenge: 5 Stücke
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DBLS206GH DBLS201G SERIES_J2103.pdf
DBLS206GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.56 EUR
Mindestbestellmenge: 1500 Stücke
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DBLS205GH DBLS201G SERIES_J2103.pdf
DBLS205GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.56 EUR
Mindestbestellmenge: 1500 Stücke
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SF27GH
SF27GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SF27G
SF27G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Produkt ist nicht verfügbar
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RS1AL MTG RS1AL%20SERIES_N2103.pdf
RS1AL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1AL RFG RS1AL%20SERIES_N2103.pdf
RS1AL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1AL MHG RS1AL%20SERIES_N2103.pdf
RS1AL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1AL RQG RS1AL%20SERIES_N2103.pdf
RS1AL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1ALHM2G RS1AL%20SERIES_N2103.pdf
RS1ALHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1ALHRHG RS1AL%20SERIES_N2103.pdf
RS1ALHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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