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RS3MB-T RS3MB-T Taiwan Semiconductor Corporation RS3DB-T SERIES_C2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8924 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
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S2AA M2G S2AA M2G Taiwan Semiconductor Corporation S2AA%20SERIES_K2102.pdf Description: DIODE GEN PURP 50V 1.5A DO214AC
Produkt ist nicht verfügbar
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S2AHM4G S2AHM4G Taiwan Semiconductor Corporation S2A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S2AHR5G S2AHR5G Taiwan Semiconductor Corporation S2A%20SERIES_N2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ60A R7G SMCJ60A R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 60VWM 96.8VC DO214AB
auf Bestellung 825 Stücke:
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18+0.99 EUR
21+0.86 EUR
100+0.66 EUR
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SMCJ45CAH SMCJ45CAH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ45CA R7G SMCJ45CA R7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CA V6G SMCJ45CA V6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CAHR7G SMCJ45CAHR7G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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MBR2035PT C0G MBR2035PT C0G Taiwan Semiconductor Corporation MBR2035PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 35V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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SS35 R7G SS35 R7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SS35 R7G SS35 R7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SS35HM6G SS35HM6G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
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SS35HR7G SS35HR7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
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SS35 M6G SS35 M6G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE GEN PURP 50V 3A DO214AB
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SS35 V6G SS35 V6G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SS35 M6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
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SS35 R7 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
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SS35 R6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
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SS35 R6G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
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SS35H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 50V 3A DO214AB
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TSM60NC390CH C5G TSM60NC390CH C5G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC390CH Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
auf Bestellung 12981 Stücke:
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6+3.4 EUR
75+1.62 EUR
150+1.55 EUR
525+1.49 EUR
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TSM60NC1R5CH C5G TSM60NC1R5CH C5G Taiwan Semiconductor Corporation TSM60NC1R5CH_B2203.pdf Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
auf Bestellung 14990 Stücke:
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14+1.27 EUR
75+1.01 EUR
150+0.8 EUR
525+0.68 EUR
1050+0.67 EUR
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SK83C SK83C Taiwan Semiconductor Corporation SK82C%20SERIES_L2102.pdf Description: DIODE SCHOTTKY 30V 8A DO214AB
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TS431ACX RFG TS431ACX RFG Taiwan Semiconductor Corporation TS431_K2412.pdf Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 6116 Stücke:
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20+0.88 EUR
33+0.54 EUR
40+0.45 EUR
100+0.35 EUR
250+0.3 EUR
500+0.26 EUR
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SMCJ51AHM6G SMCJ51AHM6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
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MBR7150 C0G MBR7150 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 150V 7.5A TO220AC
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MBR790 C0G MBR790 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 90V 7.5A TO220AC
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MBR7100 C0G MBR7100 C0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 100V 7.5A TO220AC
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TSM60NC390CP ROG TSM60NC390CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC390CP Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
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TSM60NC390CP ROG TSM60NC390CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NC390CP Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
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DBL158G DBL158G Taiwan Semiconductor Corporation DBL151G%20SERIES_L2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBL
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S1DALH S1DALH Taiwan Semiconductor Corporation S1DALH%20SERIES_B2103.pdf Description: DIODE GEN PURP 200V 1A THIN SMA
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S1DALH S1DALH Taiwan Semiconductor Corporation S1DALH%20SERIES_B2103.pdf Description: DIODE GEN PURP 200V 1A THIN SMA
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28+0.65 EUR
37+0.49 EUR
100+0.3 EUR
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S1DAL S1DAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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S1DAL S1DAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7000 Stücke:
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24+0.74 EUR
33+0.55 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.12 EUR
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S1DLS S1DLS Taiwan Semiconductor Corporation Description: DIODE GP 200V 1.2A SOD123HE
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S1DLS S1DLS Taiwan Semiconductor Corporation Description: DIODE GP 200V 1.2A SOD123HE
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TSD30H100CW TSD30H100CW Taiwan Semiconductor Corporation pdf.php?pn=TSD30H100CW Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
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TSD30H100CW TSD30H100CW Taiwan Semiconductor Corporation pdf.php?pn=TSD30H100CW Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
auf Bestellung 18 Stücke:
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7+2.59 EUR
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1.5SMC33AH 1.5SMC33AH Taiwan Semiconductor Corporation 1.5SMCH SERIES_B2207.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC33A R6G 1.5SMC33A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1.5SMC33A R7 1.5SMC33A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1.5SMC33A R6 1.5SMC33A R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1.5SMC9.1A R7G 1.5SMC9.1A R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CA 1.5SMC9.1CA Taiwan Semiconductor Corporation littelfuse_tvs_diode_1_5smc_datasheet.pdf.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CA M6G 1.5SMC9.1CA M6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1A M6G 1.5SMC9.1A M6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CA R7G 1.5SMC9.1CA R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CAHM6G 1.5SMC9.1CAHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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BZT55B3V6 L0G BZT55B3V6 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.6V 500MW MINI MELF
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BZT55B18 L1G BZT55B18 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 18V 500MW MINI MELF
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BZT55C51 L1G BZT55C51 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 51V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
Produkt ist nicht verfügbar
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BZT55B39 L1G BZT55B39 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 39V 500MW MINI MELF
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BZT55B10 L0G BZT55B10 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 10V 500MW MINI MELF
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BZT55B36 L0G BZT55B36 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 36V 500MW MINI MELF
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UG06AHA0G UG06AHA0G Taiwan Semiconductor Corporation UG06A%20SERIES_G2104.pdf Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UG06AHA1G UG06AHA1G Taiwan Semiconductor Corporation UG06A%20SERIES_G2104.pdf Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS10P05G TS10P05G Taiwan Semiconductor Corporation TS10P01G SERIES_L2203.pdf Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1197 Stücke:
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5+3.71 EUR
15+2.22 EUR
105+1.61 EUR
510+1.29 EUR
1005+1.19 EUR
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RS3MB-T RS3DB-T SERIES_C2102.pdf
RS3MB-T
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 8924 Stücke:
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Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
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S2AA M2G S2AA%20SERIES_K2102.pdf
S2AA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO214AC
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S2AHM4G S2A%20SERIES_N2102.pdf
S2AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
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S2AHR5G S2A%20SERIES_N2102.pdf
S2AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ60A R7G SMCJ SERIES_R2004.pdf
SMCJ60A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60VWM 96.8VC DO214AB
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.86 EUR
100+0.66 EUR
Mindestbestellmenge: 18
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SMCJ45CAH SMCJH SERIES_A2102.pdf
SMCJ45CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ45CA R7G SMCJ%20SERIES_S2104.pdf
SMCJ45CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CA V6G SMCJ%20SERIES_S2104.pdf
SMCJ45CA V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CAHR7G SMCJ%20SERIES_S2104.pdf
SMCJ45CAHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMCJ45CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
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MBR2035PT C0G MBR2035PT%20SERIES_H2103.pdf
MBR2035PT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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SS35 R7G SS32%20SERIES_O2102.pdf
SS35 R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SS35 R7G SS32%20SERIES_O2102.pdf
SS35 R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SS35HM6G SS32%20SERIES_O2102.pdf
SS35HM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35HR7G SS32%20SERIES_O2102.pdf
SS35HR7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35 M6G SS32%20SERIES_O2102.pdf
SS35 M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35 V6G SS32%20SERIES_O2102.pdf
SS35 V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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SS35 M6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35 R7
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35 R6
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35 R6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Produkt ist nicht verfügbar
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SS35H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AB
Produkt ist nicht verfügbar
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TSM60NC390CH C5G pdf.php?pn=TSM60NC390CH
TSM60NC390CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
auf Bestellung 12981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
75+1.62 EUR
150+1.55 EUR
525+1.49 EUR
Mindestbestellmenge: 6
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TSM60NC1R5CH C5G TSM60NC1R5CH_B2203.pdf
TSM60NC1R5CH C5G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
auf Bestellung 14990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
75+1.01 EUR
150+0.8 EUR
525+0.68 EUR
1050+0.67 EUR
Mindestbestellmenge: 14
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SK83C SK82C%20SERIES_L2102.pdf
SK83C
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 8A DO214AB
Produkt ist nicht verfügbar
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TS431ACX RFG TS431_K2412.pdf
TS431ACX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 6116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
33+0.54 EUR
40+0.45 EUR
100+0.35 EUR
250+0.3 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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SMCJ51AHM6G SMCJ SERIES_R2004.pdf
SMCJ51AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Produkt ist nicht verfügbar
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MBR7150 C0G MBR735%20SERIES_K2103.pdf
MBR7150 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
Produkt ist nicht verfügbar
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MBR790 C0G MBR735%20SERIES_K2103.pdf
MBR790 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 7.5A TO220AC
Produkt ist nicht verfügbar
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MBR7100 C0G MBR735%20SERIES_K2103.pdf
MBR7100 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 7.5A TO220AC
Produkt ist nicht verfügbar
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TSM60NC390CP ROG pdf.php?pn=TSM60NC390CP
TSM60NC390CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Produkt ist nicht verfügbar
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TSM60NC390CP ROG pdf.php?pn=TSM60NC390CP
TSM60NC390CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Produkt ist nicht verfügbar
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DBL158G DBL151G%20SERIES_L2103.pdf
DBL158G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBL
Produkt ist nicht verfügbar
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S1DALH S1DALH%20SERIES_B2103.pdf
S1DALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Produkt ist nicht verfügbar
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S1DALH S1DALH%20SERIES_B2103.pdf
S1DALH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
37+0.49 EUR
100+0.3 EUR
Mindestbestellmenge: 28
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S1DAL
S1DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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S1DAL
S1DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
33+0.55 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.12 EUR
Mindestbestellmenge: 24
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S1DLS
S1DLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 1.2A SOD123HE
Produkt ist nicht verfügbar
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S1DLS
S1DLS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 1.2A SOD123HE
Produkt ist nicht verfügbar
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TSD30H100CW pdf.php?pn=TSD30H100CW
TSD30H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
Produkt ist nicht verfügbar
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TSD30H100CW pdf.php?pn=TSD30H100CW
TSD30H100CW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOT 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Active
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.12 EUR
Mindestbestellmenge: 7
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1.5SMC33AH 1.5SMCH SERIES_B2207.pdf
1.5SMC33AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC33A R6G
1.5SMC33A R6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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1.5SMC33A R7
1.5SMC33A R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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1.5SMC33A R6
1.5SMC33A R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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1.5SMC9.1A R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CA littelfuse_tvs_diode_1_5smc_datasheet.pdf.pdf
1.5SMC9.1CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CA M6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1CA M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1A M6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CA R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CAHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC9.1CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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BZT55B3V6 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B3V6 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW MINI MELF
Produkt ist nicht verfügbar
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BZT55B18 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B18 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
Produkt ist nicht verfügbar
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BZT55C51 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C51 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
Produkt ist nicht verfügbar
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BZT55B39 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B39 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW MINI MELF
Produkt ist nicht verfügbar
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BZT55B10 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B10 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Produkt ist nicht verfügbar
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BZT55B36 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B36 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW MINI MELF
Produkt ist nicht verfügbar
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UG06AHA0G UG06A%20SERIES_G2104.pdf
UG06AHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UG06AHA1G UG06A%20SERIES_G2104.pdf
UG06AHA1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS10P05G TS10P01G SERIES_L2203.pdf
TS10P05G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
15+2.22 EUR
105+1.61 EUR
510+1.29 EUR
1005+1.19 EUR
Mindestbestellmenge: 5
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