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SK39A SK39A Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
SK39AH Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
MMBT3906T RSG MMBT3906T RSG Taiwan Semiconductor Corporation MMBT3906T_A2209.pdf Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
MMBT3906T RSG MMBT3906T RSG Taiwan Semiconductor Corporation MMBT3906T_A2209.pdf Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
67+ 0.26 EUR
137+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 46
MBR40150PTH MBR40150PTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX79C56 A0G BZX79C56 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
BZX55B27 A0G BZX55B27 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 27V 500MW DO35
Produkt ist nicht verfügbar
1PGSMB5942 R5G 1PGSMB5942 R5G Taiwan Semiconductor Corporation 1PGSMB5926%20SERIES_C2102.pdf Description: DIODE ZENER 51V 3W DO214AA
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
18+ 1.01 EUR
100+ 0.75 EUR
Mindestbestellmenge: 15
1PGSMB5942HR5G 1PGSMB5942HR5G Taiwan Semiconductor Corporation 1PGSMB5926%20SERIES_C2102.pdf Description: DIODE ZENER 51V 3W DO214AA
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.95 EUR
100+ 0.73 EUR
Mindestbestellmenge: 17
1PGSMB5942 1PGSMB5942 Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 3W DO214AA
Produkt ist nicht verfügbar
1PGSMB5942H 1PGSMB5942H Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ58CAHF2G PGSMAJ58CAHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PGSMAJ58CA R3G PGSMAJ58CA R3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PGSMAJ58CAHF4G PGSMAJ58CAHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PGSMAJ58CAHF3G PGSMAJ58CAHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ58CAHR2G PGSMAJ58CAHR2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ58CA F4G PGSMAJ58CA F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
1PGSMC5359 V7G 1PGSMC5359 V7G Taiwan Semiconductor Corporation Description: DIODE ZENER 5W DO214AB
Produkt ist nicht verfügbar
TLD6S24AH TLD6S24AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Produkt ist nicht verfügbar
TLD6S24AH TLD6S24AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.72 EUR
10+ 9.62 EUR
100+ 7.88 EUR
Mindestbestellmenge: 2
RS1KFSH RS1KFSH Taiwan Semiconductor Corporation pdf.php?pn=RS1KFSH Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MURF8L60 MURF8L60 Taiwan Semiconductor Corporation pdf.php?pn=MURF8L60 Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
MURF8L60HC0G MURF8L60HC0G Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Produkt ist nicht verfügbar
SK515C M6 Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
Produkt ist nicht verfügbar
SK515C R6G Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
BZT55B3V3 L1G BZT55B3V3 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
Produkt ist nicht verfügbar
BZT55B3V3 L0G BZT55B3V3 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 3.3V 500MW MINI MELF
Produkt ist nicht verfügbar
SF46G SF46G Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Produkt ist nicht verfügbar
SF46GH SF46GH Taiwan Semiconductor Corporation SF41G%20SERIES_G2105.pdf Description: DIODE GEN PURP 400V 4A DO201AD
Produkt ist nicht verfügbar
MBR25150CTHC0G MBR25150CTHC0G Taiwan Semiconductor Corporation MBR2535CT%20SERIES_K2104.pdf Description: DIODE ARRAY SCHOTTKY 150V TO220
Produkt ist nicht verfügbar
MBRF15150CT MBRF15150CT Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
MBRF15150CTHC0G MBRF15150CTHC0G Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
MBRF25150CT MBRF25150CT Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
MBRF5150HC0G MBRF5150HC0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
MBRF5150H MBRF5150H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
MBRF25150CTHC0G MBRF25150CTHC0G Taiwan Semiconductor Corporation MBRF2535CT%20SERIES_L2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
MBRF5150 C0G MBRF5150 C0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
BZX585B3V3 RKG BZX585B3V3 RKG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.3V 200MW SOD523F
Produkt ist nicht verfügbar
SMCJ58CAHM6G SMCJ58CAHM6G Taiwan Semiconductor Corporation SMCJ%20SERIES_S2104.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
Produkt ist nicht verfügbar
SMCJ58CA R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
SRF20150 SRF20150 Taiwan Semiconductor Corporation SRF2020%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Produkt ist nicht verfügbar
TQM250NB06CR RLG TQM250NB06CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 7A/32A 8PDFNU
auf Bestellung 2436 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.15 EUR
10+ 3.73 EUR
100+ 3 EUR
500+ 2.46 EUR
1000+ 2.04 EUR
Mindestbestellmenge: 5
TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
Mindestbestellmenge: 5000
TSM250NB06CV RGG TSM250NB06CV RGG Taiwan Semiconductor Corporation Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
19+ 0.94 EUR
100+ 0.65 EUR
500+ 0.55 EUR
1000+ 0.46 EUR
2000+ 0.41 EUR
Mindestbestellmenge: 17
TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
10000+ 0.36 EUR
Mindestbestellmenge: 5000
TSM250NB06LCV RGG TSM250NB06LCV RGG Taiwan Semiconductor Corporation Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
19+ 0.94 EUR
100+ 0.65 EUR
500+ 0.55 EUR
1000+ 0.46 EUR
2000+ 0.41 EUR
Mindestbestellmenge: 17
BZT55B9V1 L1G BZT55B9V1 L1G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
Produkt ist nicht verfügbar
BZY55B9V1 RYG BZY55B9V1 RYG Taiwan Semiconductor Corporation BZY55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 9.1V 500MW 0805
Produkt ist nicht verfügbar
BZT55B9V1 L0G BZT55B9V1 L0G Taiwan Semiconductor Corporation BZT55B2V4%20Series_H1610.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
Produkt ist nicht verfügbar
BZS55B9V1 RXG Taiwan Semiconductor Corporation BZS55B2V4%20SERIES_C1612.pdf Description: DIODE ZENER 9.1V 500MW 1206
Produkt ist nicht verfügbar
BZS55B9V1 RAG Taiwan Semiconductor Corporation Description: DIODE ZENER 500MW 1206
Produkt ist nicht verfügbar
TSM10NB60CI C0G TSM10NB60CI C0G Taiwan Semiconductor Corporation TSM10NB60.pdf Description: MOSFET N-CH 600V 10A ITO220AB
Produkt ist nicht verfügbar
TS19501CB10H RBG TS19501CB10H RBG Taiwan Semiconductor Corporation TS19501CB10H_A1911.pdf Description: IC LED DRIVER CTRLR PWM 10MSOP
Produkt ist nicht verfügbar
TS19501CB10H RBG TS19501CB10H RBG Taiwan Semiconductor Corporation TS19501CB10H_A1911.pdf Description: IC LED DRIVER CTRLR PWM 10MSOP
Produkt ist nicht verfügbar
P6SMB180CAH P6SMB180CAH Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
SS23LHRUG SS23LHRUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 30V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ20AHF3G PGSMAJ20AHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
TSP10U60S TSP10U60S Taiwan Semiconductor Corporation TSP10U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Produkt ist nicht verfügbar
TSP10U60S TSP10U60S Taiwan Semiconductor Corporation TSP10U60S_F2103.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
auf Bestellung 4594 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
11+ 1.74 EUR
100+ 1.36 EUR
500+ 1.12 EUR
1000+ 0.89 EUR
2000+ 0.86 EUR
Mindestbestellmenge: 10
SK39A
SK39A
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
SK39AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
MMBT3906T RSG MMBT3906T_A2209.pdf
MMBT3906T RSG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
MMBT3906T RSG MMBT3906T_A2209.pdf
MMBT3906T RSG
Hersteller: Taiwan Semiconductor Corporation
Description: SOT-523, 40, -0.2, PNP BIPOLAR T
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
67+ 0.26 EUR
137+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 46
MBR40150PTH
MBR40150PTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX79C56 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C56 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Produkt ist nicht verfügbar
BZX55B27 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B27 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW DO35
Produkt ist nicht verfügbar
1PGSMB5942 R5G 1PGSMB5926%20SERIES_C2102.pdf
1PGSMB5942 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.2 EUR
18+ 1.01 EUR
100+ 0.75 EUR
Mindestbestellmenge: 15
1PGSMB5942HR5G 1PGSMB5926%20SERIES_C2102.pdf
1PGSMB5942HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.95 EUR
100+ 0.73 EUR
Mindestbestellmenge: 17
1PGSMB5942
1PGSMB5942
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Produkt ist nicht verfügbar
1PGSMB5942H
1PGSMB5942H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ58CAHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PGSMAJ58CA R3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PGSMAJ58CAHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PGSMAJ58CAHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHF3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ58CAHR2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CAHR2G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Produkt ist nicht verfügbar
PGSMAJ58CA F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58CA F4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
1PGSMC5359 V7G
1PGSMC5359 V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5W DO214AB
Produkt ist nicht verfügbar
TLD6S24AH TLD6S10AH SERIES_D2103.pdf
TLD6S24AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Produkt ist nicht verfügbar
TLD6S24AH TLD6S10AH SERIES_D2103.pdf
TLD6S24AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.72 EUR
10+ 9.62 EUR
100+ 7.88 EUR
Mindestbestellmenge: 2
RS1KFSH pdf.php?pn=RS1KFSH
RS1KFSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MURF8L60 pdf.php?pn=MURF8L60
MURF8L60
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
MURF8L60HC0G MURF8L60_C2105.pdf
MURF8L60HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Produkt ist nicht verfügbar
SK515C M6 SK52C%20SERIES_R2212.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Produkt ist nicht verfügbar
SK515C R6G SK52C%20SERIES_R2212.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Produkt ist nicht verfügbar
BZT55B3V3 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Produkt ist nicht verfügbar
BZT55B3V3 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B3V3 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW MINI MELF
Produkt ist nicht verfügbar
SF46G SF41G%20SERIES_G2105.pdf
SF46G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Produkt ist nicht verfügbar
SF46GH SF41G%20SERIES_G2105.pdf
SF46GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO201AD
Produkt ist nicht verfügbar
MBR25150CTHC0G MBR2535CT%20SERIES_K2104.pdf
MBR25150CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V TO220
Produkt ist nicht verfügbar
MBRF15150CT MBRF1535CT%20SERIES_J2105.pdf
MBRF15150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
MBRF15150CTHC0G MBRF1535CT%20SERIES_J2105.pdf
MBRF15150CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
MBRF25150CT MBRF2535CT%20SERIES_L2105.pdf
MBRF25150CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
MBRF5150HC0G MBRF5100%20SERIES_H2105.pdf
MBRF5150HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
MBRF5150H
MBRF5150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
MBRF25150CTHC0G MBRF2535CT%20SERIES_L2105.pdf
MBRF25150CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
MBRF5150 C0G MBRF5100%20SERIES_H2105.pdf
MBRF5150 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A ITO220AC
Produkt ist nicht verfügbar
BZX585B3V3 RKG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V3 RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
Produkt ist nicht verfügbar
SMCJ58CAHM6G SMCJ%20SERIES_S2104.pdf
SMCJ58CAHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Produkt ist nicht verfügbar
SMCJ58CA R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Produkt ist nicht verfügbar
SRF20150 SRF2020%20SERIES_J2105.pdf
SRF20150
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Produkt ist nicht verfügbar
TQM250NB06CR RLG
TQM250NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
Produkt ist nicht verfügbar
TQM250NB06CR RLG
TQM250NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 7A/32A 8PDFNU
auf Bestellung 2436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.15 EUR
10+ 3.73 EUR
100+ 3 EUR
500+ 2.46 EUR
1000+ 2.04 EUR
Mindestbestellmenge: 5
TSM250NB06CV RGG
TSM250NB06CV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.39 EUR
Mindestbestellmenge: 5000
TSM250NB06CV RGG
TSM250NB06CV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 28A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
auf Bestellung 9980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
19+ 0.94 EUR
100+ 0.65 EUR
500+ 0.55 EUR
1000+ 0.46 EUR
2000+ 0.41 EUR
Mindestbestellmenge: 17
TSM250NB06LCV RGG
TSM250NB06LCV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.39 EUR
10000+ 0.36 EUR
Mindestbestellmenge: 5000
TSM250NB06LCV RGG
TSM250NB06LCV RGG
Hersteller: Taiwan Semiconductor Corporation
Description: 60V, 27A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1307 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
19+ 0.94 EUR
100+ 0.65 EUR
500+ 0.55 EUR
1000+ 0.46 EUR
2000+ 0.41 EUR
Mindestbestellmenge: 17
BZT55B9V1 L1G BZT55B2V4%20Series_H1610.pdf
BZT55B9V1 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
Produkt ist nicht verfügbar
BZY55B9V1 RYG BZY55B2V4%20SERIES_C1612.pdf
BZY55B9V1 RYG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 0805
Produkt ist nicht verfügbar
BZT55B9V1 L0G BZT55B2V4%20Series_H1610.pdf
BZT55B9V1 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
Produkt ist nicht verfügbar
BZS55B9V1 RXG BZS55B2V4%20SERIES_C1612.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 1206
Produkt ist nicht verfügbar
BZS55B9V1 RAG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 500MW 1206
Produkt ist nicht verfügbar
TSM10NB60CI C0G TSM10NB60.pdf
TSM10NB60CI C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 10A ITO220AB
Produkt ist nicht verfügbar
TS19501CB10H RBG TS19501CB10H_A1911.pdf
TS19501CB10H RBG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Produkt ist nicht verfügbar
TS19501CB10H RBG TS19501CB10H_A1911.pdf
TS19501CB10H RBG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Produkt ist nicht verfügbar
P6SMB180CAH P6SMB%20SERIES_Q2209.pdf
P6SMB180CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO214AA
Produkt ist nicht verfügbar
SS23LHRUG SS22L-SS215L_O2103.pdf
SS23LHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PGSMAJ20AHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ20AHF3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Produkt ist nicht verfügbar
TSP10U60S TSP10U60S_F2103.pdf
TSP10U60S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
Produkt ist nicht verfügbar
TSP10U60S TSP10U60S_F2103.pdf
TSP10U60S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO277A
auf Bestellung 4594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.95 EUR
11+ 1.74 EUR
100+ 1.36 EUR
500+ 1.12 EUR
1000+ 0.89 EUR
2000+ 0.86 EUR
Mindestbestellmenge: 10
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