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TSS54L Taiwan Semiconductor Corporation TSS54L_C14.pdf Description: DIODE SCHOTTKY 30V 200MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 1005
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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TSS54U Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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1V5KE36CA 1V5KE36CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 30.8VWM DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1V5KE36CA 1V5KE36CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 30.8VWM DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MBR30100PT MBR30100PT Taiwan Semiconductor Corporation MBR3035PT SERIES_K2103.pdf Description: DIODE ARR SCHOT 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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UGS30JH UGS30JH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 128pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UGS30JH UGS30JH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 128pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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TS9015CX5 RFG Taiwan Semiconductor Corporation Description: IC REG LIN POS ADJ 300MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 5.4V
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 60dB ~ 35dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 1V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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TS9015CX5 RFG Taiwan Semiconductor Corporation Description: IC REG LIN POS ADJ 300MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 5.4V
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 60dB ~ 35dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 1V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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1.5KE24 1.5KE24 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 19.4VWM 34.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 19.4V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.6V
Voltage - Clamping (Max) @ Ipp: 34.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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1.5KE24C 1.5KE24C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 19.4VWM 34.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 19.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21.6V
Voltage - Clamping (Max) @ Ipp: 34.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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1.5KE24CH Taiwan Semiconductor Corporation Description: TVS DIODE 19.4VWM 34.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 19.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21.6V
Voltage - Clamping (Max) @ Ipp: 34.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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MBRAD10150DH MBRAD10150DH Taiwan Semiconductor Corporation MBRAD10150DH_A2303.pdf Description: DIODE ARR SCHOTTKY 150V THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
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MBRAD10150DH MBRAD10150DH Taiwan Semiconductor Corporation MBRAD10150DH_A2303.pdf Description: DIODE ARR SCHOTTKY 150V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
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MBRAD10150H MBRAD10150H Taiwan Semiconductor Corporation MBRAD10150H_A2303.pdf Description: DIODE SCHOTTKY 150V 10A THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 165pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
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MBRAD10150H MBRAD10150H Taiwan Semiconductor Corporation MBRAD10150H_A2303.pdf Description: DIODE SCHOTTKY 150V 10A THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 165pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
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UF1MH UF1MH Taiwan Semiconductor Corporation pdf.php?pn=UF1M Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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TS6P05GH TS6P05GH Taiwan Semiconductor Corporation TS6P01G%20SERIES_M2203.pdf Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
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GP1606 GP1606 Taiwan Semiconductor Corporation GP1601 SERIES_G2104.pdf Description: DIODE ARRAY GP 800V 16A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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GP1606H GP1606H Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 800V 16A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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GP1606HC0G GP1606HC0G Taiwan Semiconductor Corporation GP1601%20SERIES_G2104.pdf Description: DIODE ARRAY GP 800V 16A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BAT42W Taiwan Semiconductor Corporation 5399_BAT42W%20SOD-123.PDF Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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HER304GH HER304GH Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE STANDARD 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
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TSU1M45H TSU1M45H Taiwan Semiconductor Corporation TSU1M45H_B2211.pdf Description: 1A, 45V, TRENCH SCHOTTKY
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 156pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TSU1M45H TSU1M45H Taiwan Semiconductor Corporation TSU1M45H_B2211.pdf Description: 1A, 45V, TRENCH SCHOTTKY
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 156pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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1000+0.35 EUR
2000+0.31 EUR
5000+0.3 EUR
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BZV55B9V1 BZV55B9V1 Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 9.1V 500MW MINI MELF
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 10 Ohms
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BZX85C6V2 BZX85C6V2 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 6.2V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
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1.5KE350 1.5KE350 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 284VWM 504VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6SMB36AH P6SMB36AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 30.8VWM DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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P6SMB36AH P6SMB36AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 30.8VWM DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
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1KSMB36AH 1KSMB36AH Taiwan Semiconductor Corporation 1KSMB10AH SERIES_A2102.pdf Description: TVS DIODE 30.8VWM DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 20A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BC549B B1 BC549B B1 Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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BC549B A1 Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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RS1KL RS1KL Taiwan Semiconductor Corporation RS1AL SERIES_N2103.pdf Description: DIODE STD 800V 800MA SUB SMA
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
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MBRF10H100CTH MBRF10H100CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTTKY 100V ITO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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SFAF1008GHC0G SFAF1008GHC0G Taiwan Semiconductor Corporation SFAF1001G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 10A ITO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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HER305GH HER305GH Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400CH Taiwan Semiconductor Corporation Description: TVS DIODE 324VWM 574VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 324V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 360V
Voltage - Clamping (Max) @ Ipp: 574V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PGSMAJ90CA R3G PGSMAJ90CA R3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMAJ90CAHR3G SMAJ90CAHR3G Taiwan Semiconductor Corporation Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Produkt ist nicht verfügbar
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PGSMAJ90CAHR3G PGSMAJ90CAHR3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Produkt ist nicht verfügbar
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SMAJ90CA R3G SMAJ90CA R3G Taiwan Semiconductor Corporation Description: TVS DIODE 90VWM 146VC DO214AC
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Produkt ist nicht verfügbar
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BZW06-33H BZW06-33H Taiwan Semiconductor Corporation BZW06 SERIES_K2105.pdf Description: TVS DIODE 33.3VWM 53.9V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BZW06-33BH BZW06-33BH Taiwan Semiconductor Corporation BZW06 SERIES_K2105.pdf Description: TVS DIODE 33.3VWM 53.9V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SS210LWH SS210LWH Taiwan Semiconductor Corporation SS24LWH SERIES_B2301.pdf Description: DIODE SCHOTTKY 100V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
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MUR820 MUR820 Taiwan Semiconductor Corporation MUR820 SERIES_K2103.pdf Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SF2004PT SF2004PT Taiwan Semiconductor Corporation SF2001PT SERIES_I2103.pdf Description: DIODE GEN PURP 200V 20A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SF2004PTH SF2004PTH Taiwan Semiconductor Corporation SF2001PT SERIES_I2103.pdf Description: DIODE GEN PURP 200V 20A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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1.5KE440H Taiwan Semiconductor Corporation Description: TVS DIODE 356VWM 631VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 356V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 396V
Voltage - Clamping (Max) @ Ipp: 631V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SS34FSH SS34FSH Taiwan Semiconductor Corporation SS34FSH SERIES_B2103.pdf Description: DIODE SCHOTTKY 40V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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TST20U45C TST20U45C Taiwan Semiconductor Corporation TST20U45C SERIES_D2104.pdf Description: DIODE SCHOTTKY 45V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
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BZV55B47 BZV55B47 Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
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TSM70N750CH TSM70N750CH Taiwan Semiconductor Corporation Description: 700V, 6A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
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TSM70N750CP TSM70N750CP Taiwan Semiconductor Corporation Description: 700V, 6A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
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SS110H SS110H Taiwan Semiconductor Corporation SS12H SERIES_B2305.pdf Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS110H SS110H Taiwan Semiconductor Corporation SS12H SERIES_B2305.pdf Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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MBRAD860H MBRAD860H Taiwan Semiconductor Corporation Description: 8A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 253pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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MBRAD860H MBRAD860H Taiwan Semiconductor Corporation Description: 8A, 60V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 253pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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SRAS860H SRAS860H Taiwan Semiconductor Corporation SRAS820%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 60V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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TSM042N03CS TSM042N03CS Taiwan Semiconductor Corporation Description: 30V, 30A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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TSS54L TSS54L_C14.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 1005
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TSS54U
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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1V5KE36CA 1V5KE SERIES_D2112.pdf
1V5KE36CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1V5KE36CA 1V5KE SERIES_D2112.pdf
1V5KE36CA
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.1A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MBR30100PT MBR3035PT SERIES_K2103.pdf
MBR30100PT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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UGS30JH
UGS30JH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 128pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UGS30JH
UGS30JH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 128pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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TS9015CX5 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 300MA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 5.4V
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 60dB ~ 35dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 1V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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TS9015CX5 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 300MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Max): 5.4V
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 60dB ~ 35dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 1V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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1.5KE24 1.5KE SERIES_O2104.pdf
1.5KE24
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 19.4VWM 34.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 19.4V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.6V
Voltage - Clamping (Max) @ Ipp: 34.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE24C 1.5KE SERIES_O2104.pdf
1.5KE24C
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 19.4VWM 34.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 19.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21.6V
Voltage - Clamping (Max) @ Ipp: 34.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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1.5KE24CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 19.4VWM 34.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 19.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21.6V
Voltage - Clamping (Max) @ Ipp: 34.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRAD10150DH MBRAD10150DH_A2303.pdf
MBRAD10150DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 150V THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRAD10150DH MBRAD10150DH_A2303.pdf
MBRAD10150DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 150V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
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14+1.55 EUR
16+1.32 EUR
100+0.95 EUR
500+0.74 EUR
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MBRAD10150H MBRAD10150H_A2303.pdf
MBRAD10150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 165pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRAD10150H MBRAD10150H_A2303.pdf
MBRAD10150H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 165pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
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16+1.36 EUR
19+1.14 EUR
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UF1MH pdf.php?pn=UF1M
UF1MH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS6P05GH TS6P01G%20SERIES_M2203.pdf
TS6P05GH
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar
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GP1606 GP1601 SERIES_G2104.pdf
GP1606
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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50+1.61 EUR
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GP1606H
GP1606H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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13+1.63 EUR
100+1.27 EUR
500+1.07 EUR
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GP1606HC0G GP1601%20SERIES_G2104.pdf
GP1606HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BAT42W 5399_BAT42W%20SOD-123.PDF
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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HER304GH HER301G SERIES_I2105.pdf
HER304GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
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TSU1M45H TSU1M45H_B2211.pdf
TSU1M45H
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 45V, TRENCH SCHOTTKY
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 156pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TSU1M45H TSU1M45H_B2211.pdf
TSU1M45H
Hersteller: Taiwan Semiconductor Corporation
Description: 1A, 45V, TRENCH SCHOTTKY
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 156pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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BZV55B9V1 BZV55B2V4%20SERIES_G2301.pdf
BZV55B9V1
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW MINI MELF
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: Mini MELF
Impedance (Max) (Zzt): 10 Ohms
Produkt ist nicht verfügbar
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BZX85C6V2 BZX85C3V3%20SERIES_H2301.pdf
BZX85C6V2
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
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1.5KE350 1.5KE SERIES_O2104.pdf
1.5KE350
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 284VWM 504VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB36AH P6SMBH SERIES_A2102.pdf
P6SMB36AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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P6SMB36AH P6SMBH SERIES_A2102.pdf
P6SMB36AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
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1KSMB36AH 1KSMB10AH SERIES_A2102.pdf
1KSMB36AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 20A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BC549B B1 BC546-BC550A_B_C_VerD2112.pdf
BC549B B1
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC549B A1 BC546-BC550A_B_C_VerD2112.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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RS1KL RS1AL SERIES_N2103.pdf
RS1KL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 800MA SUB SMA
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
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MBRF10H100CTH
MBRF10H100CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SFAF1008GHC0G SFAF1001G%20SERIES_H2105.pdf
SFAF1008GHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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HER305GH HER301G SERIES_I2105.pdf
HER305GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400CH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 324VWM 574VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 324V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 360V
Voltage - Clamping (Max) @ Ipp: 574V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PGSMAJ90CA R3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ90CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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SMAJ90CAHR3G
SMAJ90CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Produkt ist nicht verfügbar
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PGSMAJ90CAHR3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ90CAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Produkt ist nicht verfügbar
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SMAJ90CA R3G
SMAJ90CA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 90VWM 146VC DO214AC
Voltage - Breakdown (Min): 100V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 2.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 146V
Produkt ist nicht verfügbar
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BZW06-33H BZW06 SERIES_K2105.pdf
BZW06-33H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZW06-33BH BZW06 SERIES_K2105.pdf
BZW06-33BH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS210LWH SS24LWH SERIES_B2301.pdf
SS210LWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
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MUR820 MUR820 SERIES_K2103.pdf
MUR820
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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7+3.22 EUR
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SF2004PT SF2001PT SERIES_I2103.pdf
SF2004PT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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50+2.23 EUR
100+2.02 EUR
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SF2004PTH SF2001PT SERIES_I2103.pdf
SF2004PTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 900 Stücke:
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50+2.23 EUR
100+2.02 EUR
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1.5KE440H
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 356VWM 631VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 356V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 396V
Voltage - Clamping (Max) @ Ipp: 631V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS34FSH SS34FSH SERIES_B2103.pdf
SS34FSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TST20U45C TST20U45C SERIES_D2104.pdf
TST20U45C
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 898 Stücke:
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8+2.68 EUR
13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
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BZV55B47 BZV55B2V4%20SERIES_G2301.pdf
BZV55B47
Hersteller: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
Produkt ist nicht verfügbar
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TSM70N750CH
TSM70N750CH
Hersteller: Taiwan Semiconductor Corporation
Description: 700V, 6A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
Produkt ist nicht verfügbar
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TSM70N750CP
TSM70N750CP
Hersteller: Taiwan Semiconductor Corporation
Description: 700V, 6A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
Produkt ist nicht verfügbar
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SS110H SS12H SERIES_B2305.pdf
SS110H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS110H SS12H SERIES_B2305.pdf
SS110H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1074 Stücke:
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33+0.65 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
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MBRAD860H
MBRAD860H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 253pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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4500+0.43 EUR
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MBRAD860H
MBRAD860H
Hersteller: Taiwan Semiconductor Corporation
Description: 8A, 60V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 253pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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17+1.26 EUR
20+1.07 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.48 EUR
2000+0.43 EUR
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SRAS860H SRAS820%20SERIES_K2103.pdf
SRAS860H
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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TSM042N03CS
TSM042N03CS
Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 30A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
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