Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25017) > Seite 71 nach 417
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BZD27C24P R3G | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 24.2V 1W SUB SMAPackaging: Tape & Reel (TR) Tolerance: ±5.78% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 24.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 18 V |
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BZD27C24PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 24.2V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±5.78% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 24.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 18 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C27P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 1W SUB SMA |
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BZD27C27PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±7.03% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C27PHRFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±7.03% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20 V |
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BZD27C30P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W SUB SMA |
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BZD27C30PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.66% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 22 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C30PHRFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W SUB SMA |
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BZD27C33P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA |
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BZD27C33PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 33V 1W SUB SMA Tolerance: ±6.06% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: Sub SMA Grade: Automotive Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 24 V Qualification: AEC-Q101 |
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BZD27C36PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 36V 1W SUB SMA Tolerance: ±5.55% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: Sub SMA Grade: Automotive Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 27 V Qualification: AEC-Q101 |
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BZD27C39P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 1W SUB SMA |
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BZD27C39PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 1W SUB SMA Tolerance: ±5.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: Sub SMA Grade: Automotive Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V Qualification: AEC-Q101 |
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BZD27C43P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.97% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V |
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BZD27C43PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.97% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 33 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C47PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.38% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 36 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C51PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 39 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C56PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 56V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±7.14% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 56 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 43 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C62PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.45% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 47 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C68PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 68V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 51 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C6V8PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: Sub SMA Part Status: Not For New Designs Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C75PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 74.5V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.04% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 74.5 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 56 V |
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BZD27C7V5PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.45V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.04% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 7.45 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: Sub SMA Part Status: Not For New Designs Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C82PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 82V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.09% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 62 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZD27C8V2PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.09% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: Sub SMA Part Status: Not For New Designs Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
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BZD27C91PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 90.5V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±6.07% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 90.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 68 V |
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BZD27C9V1PHR3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.05V 1W SUB SMA Tolerance: ±6.07% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 9.05 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: Sub SMA Grade: Automotive Part Status: Not For New Designs Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5 V Qualification: AEC-Q101 |
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ES1BHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A DO214AC |
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ES1BLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A SUB SMA |
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ES1DVHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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ES1JHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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ES1JL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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ES1JLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
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ES2BAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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ES2BHR5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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ES2CAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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ES2CHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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ES2DHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES2DV R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES2DVHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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ES2F R5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES2FHR5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 300V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES2GAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES2GHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES2LD R5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES3FBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES3GBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 41pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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ES3JBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 34pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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ESH2C R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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HS1KL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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HS1ML RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR105S R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR110S R5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR110SHR5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR115S R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR115SHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR120SHR5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR140S R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR140SHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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MUR160SHR5G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BZD27C24P R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24.2V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.78%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Description: DIODE ZENER 24.2V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.78%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C24PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24.2V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.78%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 24.2V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.78%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C27P R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Description: DIODE ZENER 27V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C27PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C27PHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Description: DIODE ZENER 27V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.03%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C30P R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C30PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.66%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 30V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.66%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C30PHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
Description: DIODE ZENER 30V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C33P R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Description: DIODE ZENER 33V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C33PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1W SUB SMA
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 1W SUB SMA
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C36PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W SUB SMA
Tolerance: ±5.55%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 1W SUB SMA
Tolerance: ±5.55%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C39P R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1W SUB SMA
Description: DIODE ZENER 39V 1W SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C39PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1W SUB SMA
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ZENER 39V 1W SUB SMA
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C43P R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
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| BZD27C43PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C47PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.38%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 47V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.38%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C51PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 51V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C56PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 56V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C62PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.45%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.45%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C68PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 68V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 51 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C6V8PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Sub SMA
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Sub SMA
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C75PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 74.5V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.04%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 74.5 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Description: DIODE ZENER 74.5V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.04%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 74.5 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C7V5PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.45V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.04%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.45 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: Sub SMA
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 7.45V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.04%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.45 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: Sub SMA
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C82PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 82V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C8V2PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: Sub SMA
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: Sub SMA
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C91PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.07%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 90.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Description: DIODE ZENER 90.5V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.07%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 90.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZD27C9V1PHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.05V 1W SUB SMA
Tolerance: ±6.07%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.05 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.05V 1W SUB SMA
Tolerance: ±6.07%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.05 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: Sub SMA
Grade: Automotive
Part Status: Not For New Designs
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Qualification: AEC-Q101
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Stück im Wert von UAH
| ES1BHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Description: DIODE GEN PURP 100V 1A DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1BLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Description: DIODE GEN PURP 100V 1A SUB SMA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| ES1DVHR3G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2BAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2BHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2CAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2CHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DV R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2DVHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2F R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2FHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2GAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2GHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2LD R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES3FBHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Description: DIODE GEN PURP 300V 3A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES3GBHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES3JBHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 850+ | 0.49 EUR |
| 1700+ | 0.45 EUR |
| ESH2C R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1KL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1ML RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUR105S R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AA
Description: DIODE GEN PURP 50V 1A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR110S R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR110SHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR115S R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AA
Description: DIODE GEN PURP 150V 1A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR115SHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AA
Description: DIODE GEN PURP 150V 1A DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR120SHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR140S R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR140SHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR160SHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH