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GBU1006 TAIWAN SEMICONDUCTOR GBU10005-GBU1010%20N1770%20REV.A.pdf ds30052.pdf GBU1001 SERIES_M2103.pdf 54-GBU10005-GBU1010(GBU).pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Produkt ist nicht verfügbar
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GBU1002 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F85328515E0D6&compId=GBU1007_ser.pdf?ci_sign=3d0b709e105a86104bd0e4122b531a5717d353a7 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Produkt ist nicht verfügbar
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SMAJ28CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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SMAJ28CAH TAIWAN SEMICONDUCTOR pdf.php?pn=SMAJ28CAH eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ28A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZT52C20 RHG BZT52C20 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
850+0.084 EUR
Mindestbestellmenge: 850
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MBR3060PT MBR3060PT TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869977E2F0ED0469&compId=MBR3060PT.pdf?ci_sign=8d4e8ac6c93930ce2d8ab4a3d2eaca53bbdcc5b7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Produkt ist nicht verfügbar
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SD101BW RHG SD101BW RHG TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2ACF35D744A20C4&compId=SD101BW.pdf?ci_sign=df5474247a7aa421e0580aae4eb7b326dbe65857 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.02 EUR
Mindestbestellmenge: 70
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SD101BW RHG SD101BW RHG TAIWAN SEMICONDUCTOR SD101AW SERIES_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBR20H100CT TAIWAN SEMICONDUCTOR MBR20H100CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Produkt ist nicht verfügbar
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SMBJ120A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMBJ120CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZX55B4V3 A0G BZX55B4V3 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 1µA
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
785+0.092 EUR
Mindestbestellmenge: 785
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BZX55B4V7 A0G BZX55B4V7 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.5µA
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
965+0.074 EUR
Mindestbestellmenge: 965
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TSM3N90CH C5G TAIWAN SEMICONDUCTOR TSM3N90_D15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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TSM3N90CZ C0G TAIWAN SEMICONDUCTOR TSM3N90_D15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GBU1006 description GBU10005-GBU1010%20N1770%20REV.A.pdf ds30052.pdf GBU1001 SERIES_M2103.pdf 54-GBU10005-GBU1010(GBU).pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Produkt ist nicht verfügbar
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GBU1002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F85328515E0D6&compId=GBU1007_ser.pdf?ci_sign=3d0b709e105a86104bd0e4122b531a5717d353a7
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Produkt ist nicht verfügbar
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SMAJ28CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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SMAJ28CAH pdf.php?pn=SMAJ28CAH eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ28A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZT52C20 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C20 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
850+0.084 EUR
Mindestbestellmenge: 850
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MBR3060PT pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869977E2F0ED0469&compId=MBR3060PT.pdf?ci_sign=8d4e8ac6c93930ce2d8ab4a3d2eaca53bbdcc5b7
MBR3060PT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Produkt ist nicht verfügbar
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SD101BW RHG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2ACF35D744A20C4&compId=SD101BW.pdf?ci_sign=df5474247a7aa421e0580aae4eb7b326dbe65857
SD101BW RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.02 EUR
Mindestbestellmenge: 70
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SD101BW RHG SD101AW SERIES_C1601.pdf
SD101BW RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBR20H100CT MBR20H100CT SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Produkt ist nicht verfügbar
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SMBJ120A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMBJ120CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZX55B4V3 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B4V3 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 1µA
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
785+0.092 EUR
Mindestbestellmenge: 785
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BZX55B4V7 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B4V7 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.5µA
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
965+0.074 EUR
Mindestbestellmenge: 965
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TSM3N90CH C5G TSM3N90_D15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM3N90CZ C0G TSM3N90_D15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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