Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66797) > Seite 1114 nach 1114
Foto | Bezeichnung | Hersteller | Beschreibung |
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GBU1006 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
GBU1002 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
SMAJ28CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
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SMAJ28CAH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
Produkt ist nicht verfügbar |
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SMCJ28A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Tolerance: ±5% |
Produkt ist nicht verfügbar |
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BZT52C20 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 20V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR3060PT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.75V Max. forward impulse current: 200A Kind of package: tube Max. load current: 30A |
Produkt ist nicht verfügbar |
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SD101BW RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 50V Load current: 15mA Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Reverse recovery time: 1ns Kind of package: reel; tape |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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SD101BW RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 50V Load current: 15mA Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Reverse recovery time: 1ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MBR20H100CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube |
Produkt ist nicht verfügbar |
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SMBJ120A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 3.2A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
Produkt ist nicht verfügbar |
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SMBJ120CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 3.2A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
Produkt ist nicht verfügbar |
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BZX55B4V3 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Zener current: 5mA Leakage current: 1µA |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B4V7 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.5µA |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM3N90CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.6A Power dissipation: 94W Case: IPAK Gate-source voltage: ±30V On-state resistance: 5.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TSM3N90CZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.6A Power dissipation: 94W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 5.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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GBU1006 | ![]() |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Produkt ist nicht verfügbar
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GBU1002 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Kind of package: tube
Produkt ist nicht verfügbar
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SMAJ28CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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SMAJ28CAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ28A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZT52C20 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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850+ | 0.084 EUR |
MBR3060PT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Produkt ist nicht verfügbar
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SD101BW RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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70+ | 1.02 EUR |
SD101BW RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBR20H100CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Produkt ist nicht verfügbar
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SMBJ120A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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SMBJ120CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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BZX55B4V3 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 1µA
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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785+ | 0.092 EUR |
BZX55B4V7 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.5µA
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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965+ | 0.074 EUR |
TSM3N90CH C5G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM3N90CZ C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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