Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66572) > Seite 1110 nach 1110
Foto | Bezeichnung | Hersteller | Beschreibung |
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P4SMA15AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Application: automotive industry Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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1PGSMB5927 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Zener current: 125mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2323CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23 Case: SOT23 Drain-source voltage: -20V Drain current: -4.7A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: tape Gate charge: 19nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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TQM84KDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363 Drain-source voltage: -60V Drain current: -0.17A On-state resistance: 6Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Kind of package: tape Gate charge: 1.9nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TQM138KDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Kind of package: tape Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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P6KE36CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; 600W; reel,tape Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Manufacturer series: P6KE |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33A | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 5380 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ48CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TSM130NB06CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Drain-source voltage: 60V Drain current: 10A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tape Gate charge: 36nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TSM130NB06LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Drain-source voltage: 60V Drain current: 10A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tape Gate charge: 37nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
SMF24A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 5.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MBRAD5200H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2J | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
P4SMA200A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 190V; 1.51A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 171V Breakdown voltage: 190V Max. forward impulse current: 1.51A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BZT52C2V7 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 18µA Zener current: 5mA |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2G | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GAL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GALH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GFS | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GFSH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
ES2GH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
SMCJ24A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BZT52C75 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 75V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C75S RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener Type of diode: Zener |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52B12-G RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 2355 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52B12S RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 90nA Zener current: 5mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSS42U RG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape |
auf Bestellung 768 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ58CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
P4SMA15AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Application: automotive industry
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Application: automotive industry
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1PGSMB5927 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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76+ | 0.94 EUR |
101+ | 0.72 EUR |
TSM2323CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.7A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.7A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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60+ | 1.2 EUR |
92+ | 0.77 EUR |
TQM84KDCU6 RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363
Drain-source voltage: -60V
Drain current: -0.17A
On-state resistance: 6Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363
Drain-source voltage: -60V
Drain current: -0.17A
On-state resistance: 6Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TQM138KDCU6 RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6KE36CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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222+ | 0.32 EUR |
225+ | 0.31 EUR |
P6SMB33A | ![]() |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 5380 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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295+ | 0.24 EUR |
477+ | 0.15 EUR |
618+ | 0.12 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
P6SMB33AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3000+ | 0.18 EUR |
SMAJ48CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM130NB06CR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
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TSM130NB06LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
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SMF24A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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MBRAD5200H |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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ES2J |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
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P4SMA200A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 190V; 1.51A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 1.51A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 190V; 1.51A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 1.51A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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BZT52C2V7 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 18µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 18µA
Zener current: 5mA
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
970+ | 0.074 EUR |
ES2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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ES2GA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ES2GAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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ES2GAL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ES2GALH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
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ES2GFS |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ES2GFSH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
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ES2GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ24A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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BZT52C75 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
BZT52C75S RRG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.048 EUR |
BZT52B12-G RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
440+ | 0.16 EUR |
805+ | 0.089 EUR |
1010+ | 0.071 EUR |
1045+ | 0.068 EUR |
BZT52B12S RRG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
Produkt ist nicht verfügbar
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TSS42U RG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 768 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
391+ | 0.18 EUR |
618+ | 0.12 EUR |
768+ | 0.093 EUR |
SMCJ58CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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