Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (67190) > Seite 1120 nach 1120
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BZX85C30 R0G | TAIWAN SEMICONDUCTOR |
 Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 30V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 8mA Kind of package: reel; tape |
auf Bestellung 1450 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM05N03CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 7nC Kind of package: tape Kind of channel: enhancement |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM051N04LCP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Power dissipation: 18W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44.5nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SMAJ26AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% Application: automotive industry |
Produkt ist nicht verfügbar |
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BZT52B10S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode Case: SOD323F Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.18µA Zener current: 5mA Power dissipation: 0.2W Tolerance: ±2% Zener voltage: 10V |
Produkt ist nicht verfügbar |
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| RS2BAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1.5A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1.5A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| TSM8N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.9A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SMCJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| SMCJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMCJ36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| SMCJ36CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
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| RS3B | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TPMR6GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape Mounting: SMD Kind of package: reel; tape Case: TO277A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Load current: 6A Max. off-state voltage: 0.4kV Application: automotive industry Type of diode: rectifying |
Produkt ist nicht verfügbar |
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| TPMR6JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape Mounting: SMD Kind of package: reel; tape Case: TO277A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Load current: 6A Max. off-state voltage: 0.6kV Application: automotive industry Type of diode: rectifying |
Produkt ist nicht verfügbar |
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| SMCJ54A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| SMCJ54CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| SMCJ54AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
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| TPMR10DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| 1N5408G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; DO201AD Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Load current: 3A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
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| P2500M | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 25A; P2500 Mounting: THT Case: P2500 Type of diode: rectifying Semiconductor structure: single diode Load current: 25A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
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| HDBL107G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP Case: DBL Kind of package: tube Version: DIP Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 50A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
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BZW06-13B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: BZW06 Max. forward impulse current: 28A |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZW06-28 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 |
Produkt ist nicht verfügbar |
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1.5SMC36CA V6G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 29.1V Breakdown voltage: 36V Max. forward impulse current: 30A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| S8KC | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| S8KCH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMAJ150CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167V Max. forward impulse current: 1.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
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| GPA806H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO220AC Load current: 8A Max. off-state voltage: 0.8kV Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFA806GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry Type of diode: rectifying Semiconductor structure: single diode Features of semiconductor devices: superfast switching Mounting: THT Case: TO220AC Load current: 8A Max. off-state voltage: 0.4kV Application: automotive industry |
Produkt ist nicht verfügbar |
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| HERA806GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry Type of diode: rectifying Semiconductor structure: single diode Features of semiconductor devices: superfast switching Mounting: THT Case: TO220AC Load current: 8A Max. off-state voltage: 0.6kV Application: automotive industry |
Produkt ist nicht verfügbar |
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| P6SMB18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 25A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB Leakage current: 1µA |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR10100 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
Produkt ist nicht verfügbar |
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| TSP15U50S | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape Kind of package: reel; tape Case: TO277A Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Load current: 15A Max. off-state voltage: 50V |
Produkt ist nicht verfügbar |
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| 1N4007G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Features of semiconductor devices: glass passivated Capacitance: 10pF |
Produkt ist nicht verfügbar |
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| TSM60N380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK Mounting: THT Polarisation: unipolar Gate charge: 20.5nC On-state resistance: 0.38Ω Kind of channel: enhancement Case: IPAK Drain current: 11A Power dissipation: 125W Gate-source voltage: ±30V Drain-source voltage: 600V Kind of package: tube Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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TSM60N380CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP Mounting: THT Polarisation: unipolar Gate charge: 20.5nC On-state resistance: 0.38Ω Kind of channel: enhancement Case: TO220FP Drain current: 11A Power dissipation: 33W Gate-source voltage: ±30V Drain-source voltage: 600V Kind of package: tube Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| TSM60N380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK Mounting: SMD Polarisation: unipolar Gate charge: 20.5nC On-state resistance: 0.38Ω Kind of channel: enhancement Case: DPAK Drain current: 11A Power dissipation: 125W Gate-source voltage: ±30V Drain-source voltage: 600V Kind of package: tape Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| SMF15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 8.2A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SMBJ30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMBJ Leakage current: 1µA |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMB33A | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB Leakage current: 1µA |
auf Bestellung 3619 Stücke: Lieferzeit 14-21 Tag (e) |
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| P6SMB24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB Leakage current: 1µA |
auf Bestellung 4600 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES2GA | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape Type of diode: rectifying Max. off-state voltage: 0.4kV Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Load current: 2A Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
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| SMCJ85A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 11.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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| SFF1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; automotive industry Mounting: THT Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 200V Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry Mounting: THT Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.6kV Application: automotive industry |
Produkt ist nicht verfügbar |
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| SFF1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; automotive industry Mounting: THT Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Application: automotive industry |
Produkt ist nicht verfügbar |
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TSM60N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM60N900CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM60N900CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of package: tape Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH |
| BZX85C30 R0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: reel; tape
auf Bestellung 1450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 459+ | 0.16 EUR |
| 811+ | 0.088 EUR |
| 1450+ | 0.049 EUR |
| TSM05N03CW RPG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 110+ | 0.65 EUR |
| 131+ | 0.54 EUR |
| TSM051N04LCP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tape
Kind of channel: enhancement
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| SMAJ26AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
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| BZT52B10S RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.18µA
Zener current: 5mA
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.18µA
Zener current: 5mA
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
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| RS2BAH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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| TSM8N80CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
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| SMCJ36A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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Stück im Wert von UAH
| SMCJ36AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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Stück im Wert von UAH
| SMCJ36CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ36CAH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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| RS3B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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| TPMR6GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
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| TPMR6JH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Load current: 6A
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
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| SMCJ54A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ54CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ54AH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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| TPMR10DH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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| 1N5408G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
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| P2500M |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 25A; P2500
Mounting: THT
Case: P2500
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 25A
Max. off-state voltage: 1kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 25A; P2500
Mounting: THT
Case: P2500
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 25A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| HDBL107G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| BZW06-13B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 146+ | 0.49 EUR |
| 230+ | 0.31 EUR |
| BZW06-28 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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| 1.5SMC36CA V6G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| S8KC |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S8KCH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ150CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GPA806H |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.8kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.8kV
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFA806GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.4kV
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HERA806GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB18CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 25A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Leakage current: 1µA
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 300+ | 0.24 EUR |
| MBR10100 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSP15U50S |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Kind of package: reel; tape
Case: TO277A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 15A
Max. off-state voltage: 50V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Kind of package: reel; tape
Case: TO277A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 15A
Max. off-state voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4007G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N380CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: IPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; IPAK
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: IPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N380CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: TO220FP
Drain current: 11A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Mounting: THT
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: TO220FP
Drain current: 11A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N380CP ROG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: DPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tape
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 20.5nC
On-state resistance: 0.38Ω
Kind of channel: enhancement
Case: DPAK
Drain current: 11A
Power dissipation: 125W
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of package: tape
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF15A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 8.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 8.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ30A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMBJ
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMBJ
Leakage current: 1µA
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 191+ | 0.38 EUR |
| 252+ | 0.28 EUR |
| 321+ | 0.22 EUR |
| 424+ | 0.17 EUR |
| 435+ | 0.16 EUR |
| P6SMB33A | |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Leakage current: 1µA
auf Bestellung 3619 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 376+ | 0.19 EUR |
| 516+ | 0.14 EUR |
| 910+ | 0.079 EUR |
| 962+ | 0.074 EUR |
| P6SMB24A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Leakage current: 1µA
auf Bestellung 4600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 697+ | 0.1 EUR |
| 910+ | 0.079 EUR |
| 962+ | 0.074 EUR |
| ES2GA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Load current: 2A
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Load current: 2A
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ85A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 11.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 11.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFF1604GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; automotive industry
Mounting: THT
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; automotive industry
Mounting: THT
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFF1608GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry
Mounting: THT
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry
Mounting: THT
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFF1606GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; automotive industry
Mounting: THT
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; automotive industry
Mounting: THT
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N900CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N900CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSM60N900CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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