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TSM60NB380CF C0G TSM60NB380CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CH C5G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NB380CH Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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SMBJ36CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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HERA805GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SMBJ33CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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RMB4S TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85BC31995A60D6&compId=RMB2S_ser.pdf?ci_sign=01ba02c3ea6cdad1633d21ff914fcbf48690bdc3 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
496+0.14 EUR
584+0.12 EUR
Mindestbestellmenge: 358
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
530+0.13 EUR
Mindestbestellmenge: 530
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1N4749A TAIWAN SEMICONDUCTOR 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4740A SERIES_O2104.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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SMBJ6V5A TAIWAN SEMICONDUCTOR SMBJ SERIES_R2104.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
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TSM2N7002AKCU RFG TAIWAN SEMICONDUCTOR TSM2N7002AKCU_A2111.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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TSM2N7002AKDCU6 RFG TAIWAN SEMICONDUCTOR TSM2N7002AKDCU6_A2111.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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SF2004PTH TAIWAN SEMICONDUCTOR SF2001PT SERIES_I2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
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SF2005GH TAIWAN SEMICONDUCTOR SF2001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
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BYG23M TAIWAN SEMICONDUCTOR BYG23M_C2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
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BYG23MH TAIWAN SEMICONDUCTOR BYG23MH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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TSCDT06065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT08065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT10065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
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TSCDT12065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT16065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDT16065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT20065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDF12065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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TSCDF10065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDF10065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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TSCDF16065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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SMCJ30A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TLD5S10AH TAIWAN SEMICONDUCTOR TLD5S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD5S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
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TLD6S10AH TAIWAN SEMICONDUCTOR TLD6S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD6S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Kind of package: reel; tape
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TLD8S10AH TAIWAN SEMICONDUCTOR TLD8S10AH SERIES_E2310.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD8S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Kind of package: reel; tape
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P4KE6.8A TAIWAN SEMICONDUCTOR media?resourcetype=datasheets&itemid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383&filename=littelfuse_tvs_diode_p4ke_datasheet.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE6.8CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 p4ke68.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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MBRS1045CT TAIWAN SEMICONDUCTOR MBRS1035CT%20SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
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TESD5V0V4UCX6 RFG TESD5V0V4UCX6 RFG TAIWAN SEMICONDUCTOR TESD5V0V4UCX6_B2003.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 75W
Mounting: SMD
Case: SOT26
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
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TESD5V0L1UC RJG TAIWAN SEMICONDUCTOR TESD5V0L1UC_E2007.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.1kW
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 0.1µA
Semiconductor structure: bidirectional
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P4KE440A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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BZD27C11PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C12PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C15PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C16PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C18PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C18PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZW04-31B BZW04-31B TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 8A
auf Bestellung 300 Stücke:
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100+0.72 EUR
172+0.42 EUR
300+0.24 EUR
Mindestbestellmenge: 100
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BZW04-128 TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 2A
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1.5SMC15A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
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S1G M2G S1G M2G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
auf Bestellung 50 Stücke:
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50+1.43 EUR
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S1D M2G S1D M2G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
auf Bestellung 946 Stücke:
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228+0.31 EUR
388+0.18 EUR
946+0.076 EUR
Mindestbestellmenge: 228
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TSM070NB04CR RLG TAIWAN SEMICONDUCTOR TSM070NB04CR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
Produkt ist nicht verfügbar
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1N5408G TAIWAN SEMICONDUCTOR 1n5400-d.pdf 1N5400G%20SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf 1N5400G SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBPC2501 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Kind of package: in-tray
Electrical mounting: THT
Version: square
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Load current: 25A
Leads: connectors FASTON
Case: GBPC
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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BZX55C47 R0G BZX55C47 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
auf Bestellung 419 Stücke:
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5.0SMDJ30A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ36A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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5.0SMDJ33A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf 5.0SMDJ_Series.pdf 5.0SMDJ SERIES_D2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 93.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Produkt ist nicht verfügbar
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SMBJ10A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TSM60NB150CF C0G TSM60NB150CF C0G TAIWAN SEMICONDUCTOR TSM60NB150CF_A1705.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
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TSM60NE285CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Produkt ist nicht verfügbar
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BZX55C11 R0G BZX55C11 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 415 Stücke:
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415+0.17 EUR
Mindestbestellmenge: 415
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TS6P05G TS6P05G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F682B8D6340D6&compId=TS6P07G_ser.pdf?ci_sign=256df028d2e4a86def2cb69fe6492e074323ce85 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 48 Stücke:
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40+1.83 EUR
48+1.49 EUR
Mindestbestellmenge: 40
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P6SMB10CA R4 P6SMB10CA R4 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
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TSM60NB380CF C0G
TSM60NB380CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NB380CH C5G pdf.php?pn=TSM60NB380CH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ36CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Produkt ist nicht verfügbar
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HERA805GH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Produkt ist nicht verfügbar
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SMBJ33CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Produkt ist nicht verfügbar
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RMB4S pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85BC31995A60D6&compId=RMB2S_ser.pdf?ci_sign=01ba02c3ea6cdad1633d21ff914fcbf48690bdc3
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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BZX55C2V7 R0G
BZX55C2V7 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
496+0.14 EUR
584+0.12 EUR
Mindestbestellmenge: 358
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BZX55C2V7 R0 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3
BZX55C2V7 R0
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
530+0.13 EUR
Mindestbestellmenge: 530
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1N4749A 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4740A SERIES_O2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
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SMBJ6V5A SMBJ SERIES_R2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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TSM2N7002AKCU RFG TSM2N7002AKCU_A2111.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM2N7002AKDCU6 RFG TSM2N7002AKDCU6_A2111.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SF2004PTH SF2001PT SERIES_I2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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SF2005GH SF2001G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
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BYG23M BYG23M_C2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BYG23MH BYG23MH_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TSCDT06065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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TSCDT08065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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TSCDT10065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Produkt ist nicht verfügbar
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TSCDT12065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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TSCDT16065G1 pdf.php?pn=TSCDT16065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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TSCDT20065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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TSCDF12065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSCDF10065G1 pdf.php?pn=TSCDF10065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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TSCDF16065G1
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ30A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ30AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
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TLD5S10AH TLD5S10AH SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD5S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLD6S10AH TLD6S10AH SERIES_D2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD6S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLD8S10AH TLD8S10AH SERIES_E2310.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD8S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4KE6.8A media?resourcetype=datasheets&itemid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383&filename=littelfuse_tvs_diode_p4ke_datasheet.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4KE6.8CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 p4ke68.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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MBRS1045CT MBRS1035CT%20SERIES_M2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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TESD5V0V4UCX6 RFG TESD5V0V4UCX6_B2003.pdf
TESD5V0V4UCX6 RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 75W
Mounting: SMD
Case: SOT26
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Produkt ist nicht verfügbar
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TESD5V0L1UC RJG TESD5V0L1UC_E2007.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.1kW
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 0.1µA
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4KE440A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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BZD27C11PWH BZD27C11PWH SERIES_B2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C12PW BZD27C11PW SERIES_D2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C15PW BZD27C11PW SERIES_D2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C16PWH BZD27C11PWH SERIES_B2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZD27C18PW BZD27C11PW SERIES_D2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C18PWH BZD27C11PWH SERIES_B2203.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
Produkt ist nicht verfügbar
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BZW04-31B bzw045v8.pdf
BZW04-31B
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 8A
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
172+0.42 EUR
300+0.24 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BZW04-128 bzw045v8.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
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1.5SMC15A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Produkt ist nicht verfügbar
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S1G M2G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439
S1G M2G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
S1D M2G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439
S1D M2G
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
auf Bestellung 946 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
388+0.18 EUR
946+0.076 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
TSM070NB04CR RLG TSM070NB04CR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
Produkt ist nicht verfügbar
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1N5408G 1n5400-d.pdf 1N5400G%20SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf 1N5400G SERIES_K2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Mounting: THT
Load current: 3A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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GBPC2501 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Kind of package: in-tray
Electrical mounting: THT
Version: square
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Load current: 25A
Leads: connectors FASTON
Case: GBPC
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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BZX55C47 R0G
BZX55C47 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
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5.0SMDJ30A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ36A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ33A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf 5.0SMDJ_Series.pdf 5.0SMDJ SERIES_D2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 93.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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SMBJ10A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM60NB150CF C0G TSM60NB150CF_A1705.pdf
TSM60NB150CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
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TSM60NE285CH C5G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
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BZX55C11 R0G
BZX55C11 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
415+0.17 EUR
Mindestbestellmenge: 415
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TS6P05G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F682B8D6340D6&compId=TS6P07G_ser.pdf?ci_sign=256df028d2e4a86def2cb69fe6492e074323ce85
TS6P05G
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
48+1.49 EUR
Mindestbestellmenge: 40
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P6SMB10CA R4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5
P6SMB10CA R4
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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