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TSM70N1R4CP ROG TAIWAN SEMICONDUCTOR TSM70N1R4_D1706.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N380CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N380CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N600CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N600CI C0G TSM70N600CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N600CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N750CH C5G TAIWAN SEMICONDUCTOR TSM70N750_C1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N750CP ROG TAIWAN SEMICONDUCTOR TSM70N750_C1706.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N900CI C0G TSM70N900CI C0G TAIWAN SEMICONDUCTOR TSM70N900_F1901.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70NB1R4CP ROG TAIWAN SEMICONDUCTOR TSM70NB1R4CP_C1612.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRF30200CT TAIWAN SEMICONDUCTOR littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f MBRF30200CT%20N0855%20REV.B.pdf MBRF3035CT SERIES_M2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
35+2.07 EUR
45+1.6 EUR
48+1.5 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N380CH C5G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N380CP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N600CH C5G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N600CI C0G
TSM70N600CI C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N600CP ROG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N750CH C5G TSM70N750_C1706.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N750CP ROG TSM70N750_C1706.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70N900CI C0G TSM70N900_F1901.pdf
TSM70N900CI C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM70NB1R4CP ROG TSM70NB1R4CP_C1612.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF30200CT littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f MBRF30200CT%20N0855%20REV.B.pdf MBRF3035CT SERIES_M2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
35+2.07 EUR
45+1.6 EUR
48+1.5 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
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