Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (67500) > Seite 1119 nach 1125
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1SMA200Z | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.25W; 200V; 1.2mA; SMD; reel,tape; DO214AC,SMA Type of diode: Zener Power dissipation: 1.25W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 1µA Zener current: 1.2mA |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ10CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SMAJ100CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
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P4SMA33A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P4SMA Leakage current: 1µA |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 8.4A |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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S4D V6G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMC Semiconductor structure: single diode Load current: 4A Max. forward impulse current: 100A Max. forward voltage: 1.15V Max. off-state voltage: 200V Features of semiconductor devices: glass passivated Capacitance: 60pF Reverse recovery time: 1.5µs |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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S4J V6G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMC Semiconductor structure: single diode Load current: 4A Max. forward impulse current: 100A Max. forward voltage: 1.15V Max. off-state voltage: 0.6kV Features of semiconductor devices: glass passivated Capacitance: 60pF Reverse recovery time: 1.5µs |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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SF14G-K | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 200V; 1A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SF14G | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: rectifying; THT; 200V; 1A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM2NB60CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.35A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 9.4nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
1.5KE39CAH | TAIWAN SEMICONDUCTOR |
Category: Unclassified Description: 1.5KE39CAH |
auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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UG8JH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Application: automotive industry |
Produkt ist nicht verfügbar |
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1PGSMB5938 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 36V; 42mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Zener current: 42mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ70CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 13.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SMCJ30CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SMCJ30CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TS3480CX33 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.1V Output voltage: 3.3V Output current: 0.1A Case: SOT23 Mounting: SMD Manufacturer series: TS3480 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.8...30V |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1BL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying Type of diode: rectifying |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ11CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 34A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
P4KE33A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBR2060CT | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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TS34118CS28 RDG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system Type of integrated circuit: driver Supply voltage: 3...6.5V DC Mounting: SMD Case: SOP28 Integrated circuit features: voice switched speakerphone system Kind of package: reel; tape |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C16 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C16S R9G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TSS42U RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TSS43U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: THT Type of integrated circuit: voltage regulator Kind of package: tube Input voltage: 8.3...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 3.3V Case: TO220 |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2937CZ33 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 3.3V Output current: 0.5A Case: TO220 Mounting: THT Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...26V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZV55C2V4 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 50µA Zener current: 5mA |
auf Bestellung 8630 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C15 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB150CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Tolerance: ±5% |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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TQM138KDCU6 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Kind of package: tape Polarisation: unipolar Gate charge: 1.8nC Drain current: 0.32A Power dissipation: 0.32W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TS2940CP33 ROG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2% Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 0...26V Tolerance: ±0.2% Voltage drop: 0.6V Output current: 1A Number of channels: 1 Output voltage: 3.3V Case: DPAK |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 8.3...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 3.3V Case: SOT223 |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: THT Type of integrated circuit: voltage regulator Kind of package: tube Input voltage: 10...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 5V Case: TO220 |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2940CM50 RNG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2% Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 10...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 5V Case: D2PAK |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM70N380CI C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TSM70N900CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N900CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N1R4CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N1R4CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 7.7nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 125W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N380CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 125W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 18.8nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TSM70N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
TSM70N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 12.6nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N750CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TSM70N750CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 10.7nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TSM70N900CI C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TSM70NB1R4CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 1.8A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 7.4nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MBRF30200CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 1.05V Max. forward impulse current: 200A Kind of package: tube |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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BZS55C3V0 RXG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 4µA Zener current: 5mA |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C3V0 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 9µA Zener current: 5mA |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ9.0A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 10÷11.1V; 40A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 40A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
Produkt ist nicht verfügbar |
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BZX85C36 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 36V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 8mA Leakage current: 0.5µA |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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BZT52C3V9 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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P4KE30A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5V Max. forward impulse current: 10A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
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TS19377CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 3.6÷23VDC Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED driver Case: SOP8 Output current: 2A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 3.6...23V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SF34G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ABS15J | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS Case: ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 0.6kV |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA200Z |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 200V; 1.2mA; SMD; reel,tape; DO214AC,SMA
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 1.2mA
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 200V; 1.2mA; SMD; reel,tape; DO214AC,SMA
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 1.2mA
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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60+ | 1.19 EUR |
SMAJ10CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SMAJ100CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
P4SMA33A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P4SMA
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P4SMA
Leakage current: 1µA
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.03 EUR |
P4SMA36A M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
194+ | 0.37 EUR |
S4D V6G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
S4J V6G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Load current: 4A
Max. forward impulse current: 100A
Max. forward voltage: 1.15V
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Reverse recovery time: 1.5µs
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 1.99 EUR |
SF14G-K |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Produkt ist nicht verfügbar
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SF14G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Produkt ist nicht verfügbar
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TSM2NB60CP ROG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 9.4nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5KE39CAH |
auf Bestellung 3750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1250+ | 0.43 EUR |
UG8JH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1PGSMB5938 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; 42mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Zener current: 42mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; 42mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Zener current: 42mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
106+ | 0.67 EUR |
141+ | 0.51 EUR |
177+ | 0.4 EUR |
187+ | 0.38 EUR |
SMCJ70CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.9A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ30CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ30CAH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TS3480CX33 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS3480
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...30V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS3480
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...30V
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
98+ | 0.73 EUR |
ES1BL |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.15 EUR |
SMBJ11CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 12.2÷13.5V; 34A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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P4KE33A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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MBR2060CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
80+ | 0.9 EUR |
100+ | 0.72 EUR |
TS34118CS28 RDG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Supply voltage: 3...6.5V DC
Mounting: SMD
Case: SOP28
Integrated circuit features: voice switched speakerphone system
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Supply voltage: 3...6.5V DC
Mounting: SMD
Case: SOP28
Integrated circuit features: voice switched speakerphone system
Kind of package: reel; tape
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
BZT52C16 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
900+ | 0.08 EUR |
BZT52C16S R9G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Produkt ist nicht verfügbar
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TSS42U RGG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSS43U RGG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
TS2940CZ33 C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: TO220
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: TO220
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.57 EUR |
32+ | 2.3 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
TS2937CZ33 C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZV55C2V4 L0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 50µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 50µA
Zener current: 5mA
auf Bestellung 8630 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
562+ | 0.13 EUR |
872+ | 0.082 EUR |
1040+ | 0.069 EUR |
1129+ | 0.063 EUR |
1185+ | 0.06 EUR |
1244+ | 0.057 EUR |
BZX84C15 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
P6SMB150CA | ![]() |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
160+ | 0.45 EUR |
191+ | 0.37 EUR |
300+ | 0.24 EUR |
TQM138KDCU6 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.8nC
Drain current: 0.32A
Power dissipation: 0.32W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.8nC
Drain current: 0.32A
Power dissipation: 0.32W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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TS2940CP33 ROG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 0...26V
Tolerance: ±0.2%
Voltage drop: 0.6V
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Case: DPAK
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 0...26V
Tolerance: ±0.2%
Voltage drop: 0.6V
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Case: DPAK
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.7 EUR |
43+ | 1.7 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
TS2940CW33 RPG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: SOT223
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: SOT223
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2 EUR |
58+ | 1.24 EUR |
69+ | 1.05 EUR |
115+ | 0.62 EUR |
122+ | 0.59 EUR |
TS2940CZ50 C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: TO220
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: TO220
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
33+ | 2.17 EUR |
38+ | 1.89 EUR |
39+ | 1.84 EUR |
41+ | 1.74 EUR |
TS2940CM50 RNG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: D2PAK
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: D2PAK
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
36+ | 1.99 EUR |
39+ | 1.86 EUR |
TSM70N380CI C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM70N900CH C5G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM70N900CP ROG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM70N1R4CH C5G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM70N1R4CP ROG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM70N380CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N380CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N600CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N750CH C5G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N750CP ROG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 10.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM70N900CI C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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TSM70NB1R4CP ROG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.8A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.8A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: tape
Kind of channel: enhancement
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MBRF30200CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
35+ | 2.07 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
BZS55C3V0 RXG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
750+ | 0.096 EUR |
970+ | 0.074 EUR |
BZT52C3V0 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 9µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 9µA
Zener current: 5mA
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
990+ | 0.073 EUR |
SMBJ9.0A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 40A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 40A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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BZX85C36 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 8mA
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 8mA
Leakage current: 0.5µA
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
245+ | 0.29 EUR |
BZT52C3V9 RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
720+ | 0.099 EUR |
P4KE30A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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TS19377CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 3.6÷23VDC
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: SOP8
Output current: 2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 3.6...23V DC
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 3.6÷23VDC
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: SOP8
Output current: 2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 3.6...23V DC
Produkt ist nicht verfügbar
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SF34G-A |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Produkt ist nicht verfügbar
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ABS15J |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
140+ | 0.51 EUR |
275+ | 0.26 EUR |