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P4SMA10A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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BZW04-8V5 TAIWAN SEMICONDUCTOR Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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P4KE10A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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P4SMA10CA TAIWAN SEMICONDUCTOR P4SMA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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MBR1560CT MBR1560CT TAIWAN SEMICONDUCTOR mbr1560ct-d.pdf MBR1560CT(-1)%20MBRB1560CT%20N0727%20REV.A.pdf MBR1545CT-1560CT.pdf MBR1535CT SERIES_I2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
79+0.92 EUR
91+0.79 EUR
Mindestbestellmenge: 58
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BZW06-33 TAIWAN SEMICONDUCTOR en.CD00000694.pdf bzw065v8.pdf BZW06 SERIES_K2105.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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SMCJ14A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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1SMA4749H TAIWAN SEMICONDUCTOR 1SMA4737H SERIES_A2102.pdf Category: SMD Zener diodes
Description: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C3V6 RHG BZT52C3V6 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
auf Bestellung 120 Stücke:
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120+0.6 EUR
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S10MCH TAIWAN SEMICONDUCTOR S10GCH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape
Mounting: SMD
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
Produkt ist nicht verfügbar
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KBU1006G KBU1006G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 46 Stücke:
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25+2.96 EUR
37+1.97 EUR
46+1.56 EUR
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KBU1004G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: in-tray
Version: flat
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KBU1007G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Case: KBU
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 10A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: in-tray
Produkt ist nicht verfügbar
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MBR3060PT TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869977E2F0ED0469&compId=MBR3060PT.pdf?ci_sign=8d4e8ac6c93930ce2d8ab4a3d2eaca53bbdcc5b7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Produkt ist nicht verfügbar
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MBR20L100CT TAIWAN SEMICONDUCTOR MBR20L100CT SERIES_H2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV
Max. forward voltage: 0.85V
Max. load current: 20A
Load current: 20A
Max. off-state voltage: 100V
Semiconductor structure: common cathode
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Leakage current: 20µA
auf Bestellung 450 Stücke:
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100+1 EUR
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SK84C SK84C TAIWAN SEMICONDUCTOR SK84C00000S040.pdf SK82C SERIES_L2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
122+0.59 EUR
264+0.27 EUR
280+0.26 EUR
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SMBJ28CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ28CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
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1.5KE400CA 1.5KE400CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB8D65C80AF4760D6&compId=1.5KExx_SER.pdf?ci_sign=66bf3a25b6d3a7fc16260970bef20a40c1a65301 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
auf Bestellung 122 Stücke:
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76+0.94 EUR
93+0.78 EUR
122+0.59 EUR
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UG1004GH TAIWAN SEMICONDUCTOR UG1004G SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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SFA1004GH TAIWAN SEMICONDUCTOR SFA1001G%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SFS1004GH TAIWAN SEMICONDUCTOR SFS1001GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. load current: 10A
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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UGF1004GAH TAIWAN SEMICONDUCTOR UGF1004GA SERIES_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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UGF1004GH TAIWAN SEMICONDUCTOR UGF1004G SERIES_F2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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HERF1004GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
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SFAF1004GH TAIWAN SEMICONDUCTOR SFAF1001G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
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UG1005GH TAIWAN SEMICONDUCTOR UG1004G SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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SFS1005GH TAIWAN SEMICONDUCTOR SFS1001GH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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HER1005GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
Produkt ist nicht verfügbar
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GBPC3506W TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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BZX55C33 R0G BZX55C33 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.3 EUR
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BZX55C3V6 R0G BZX55C3V6 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
auf Bestellung 1648 Stücke:
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358+0.2 EUR
481+0.15 EUR
749+0.096 EUR
1013+0.071 EUR
1330+0.054 EUR
1493+0.048 EUR
1648+0.043 EUR
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BZX55C36 R0G BZX55C36 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 220 Stücke:
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220+0.33 EUR
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BZX55C39 R0G BZX55C39 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
auf Bestellung 940 Stücke:
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940+0.076 EUR
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BZX55C30 R0G BZX55C30 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 40 Stücke:
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40+1.79 EUR
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TSM950N10CW RPG TAIWAN SEMICONDUCTOR TSM950N10_D1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMCJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SS23M SS23M TAIWAN SEMICONDUCTOR SS22M SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
385+0.19 EUR
511+0.14 EUR
747+0.096 EUR
782+0.092 EUR
Mindestbestellmenge: 313
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SS23MH TAIWAN SEMICONDUCTOR SS22MH SERIES_A2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TQM043NH04LCR RLG TAIWAN SEMICONDUCTOR TQM043NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 4.3mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 100W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TSM110NB04LCR RLG TAIWAN SEMICONDUCTOR TSM110NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TQM025NH04LCR RLG TAIWAN SEMICONDUCTOR TQM025NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 2.5mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 136W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM019NH04LCR RLG TAIWAN SEMICONDUCTOR TQM019NH04LCR_B2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 1.9mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 150W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM032NH04LCR RLG TAIWAN SEMICONDUCTOR TQM032NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 3.2mΩ
Drain current: 81A
Gate-source voltage: ±16V
Power dissipation: 115W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM056NH04LCR RLG TAIWAN SEMICONDUCTOR TQM056NH04LCR_C2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 30.4nC
On-state resistance: 5.6mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 78.9W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM070NH04LCR RLG TAIWAN SEMICONDUCTOR TQM070NH04LCR_D2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
Produkt ist nicht verfügbar
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TSM150NB04LCR RLG TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Case: PDFN56
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 15mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 19W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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SMBJ58AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ20CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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TSD30H100CW MNG TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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TSM10NC65CF C0G TSM10NC65CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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TSM126CX RFG TSM126CX RFG TAIWAN SEMICONDUCTOR TSM126_VerA14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM190N08CZ C0G TAIWAN SEMICONDUCTOR TSM190N08_B15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM100N06CZ C0G TSM100N06CZ C0G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAD9619922155E0C7&compId=TSM100N06.pdf?ci_sign=6ec68f0dff1607077a48863009234b1d4e2325a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NB380CF C0G TSM60NB380CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CH C5G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NB380CH Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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P4SMA10A littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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BZW04-8V5
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 27.6A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 27.6A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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P4KE10A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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P4SMA10CA P4SMA.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 9.5V; 29A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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MBR1560CT mbr1560ct-d.pdf MBR1560CT(-1)%20MBRB1560CT%20N0727%20REV.A.pdf MBR1545CT-1560CT.pdf MBR1535CT SERIES_I2104.pdf
MBR1560CT
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; TO220AB; Ufmax: 0.84V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 60V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
79+0.92 EUR
91+0.79 EUR
Mindestbestellmenge: 58
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BZW06-33 en.CD00000694.pdf bzw065v8.pdf BZW06 SERIES_K2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Produkt ist nicht verfügbar
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SMCJ14A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15.6÷17.2V; 67A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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1SMA4749H 1SMA4737H SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 24V; SMD; reel,tape; DO214AC,SMA; single diode
Type of diode: Zener
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZT52C3V6 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V6 RHG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
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S10MCH S10GCH SERIES_A2102.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; reel,tape
Mounting: SMD
Case: SMC
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
Produkt ist nicht verfügbar
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KBU1006G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
KBU1006G
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
37+1.97 EUR
46+1.56 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
KBU1004G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Kind of package: in-tray
Version: flat
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU1007G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Case: KBU
Version: flat
Features of semiconductor devices: glass passivated
Leads: round pin
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 10A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Max. forward impulse current: 200A
Kind of package: in-tray
Produkt ist nicht verfügbar
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MBR3060PT pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869977E2F0ED0469&compId=MBR3060PT.pdf?ci_sign=8d4e8ac6c93930ce2d8ab4a3d2eaca53bbdcc5b7
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Produkt ist nicht verfügbar
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MBR20L100CT MBR20L100CT SERIES_H2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; TO220AB; Ufmax: 850mV
Max. forward voltage: 0.85V
Max. load current: 20A
Load current: 20A
Max. off-state voltage: 100V
Semiconductor structure: common cathode
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Leakage current: 20µA
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1 EUR
Mindestbestellmenge: 100
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SK84C SK84C00000S040.pdf SK82C SERIES_L2102.pdf
SK84C
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 150A
Kind of package: reel; tape
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
122+0.59 EUR
264+0.27 EUR
280+0.26 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ28CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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SMBJ28CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
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1.5KE400CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB8D65C80AF4760D6&compId=1.5KExx_SER.pdf?ci_sign=66bf3a25b6d3a7fc16260970bef20a40c1a65301
1.5KE400CA
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
93+0.78 EUR
122+0.59 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
UG1004GH UG1004G SERIES_B2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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SFA1004GH SFA1001G%20SERIES_K2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Produkt ist nicht verfügbar
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SFS1004GH SFS1001GH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; D2PAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. load current: 10A
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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UGF1004GAH UGF1004GA SERIES_C2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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UGF1004GH UGF1004G SERIES_F2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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HERF1004GH HERF1001G SERIES_I2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Application: automotive industry
Produkt ist nicht verfügbar
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SFAF1004GH SFAF1001G SERIES_H2105.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UG1005GH UG1004G SERIES_B2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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SFS1005GH SFS1001GH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 5Ax2; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Produkt ist nicht verfügbar
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HER1005GH HER1001G SERIES_I2104.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
Produkt ist nicht verfügbar
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GBPC3506W pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9BF18ED45B00D6&compId=GBPC15_25_35_ser.pdf?ci_sign=4015d9a11799d5326d0aa6ccd83b22a7d7d97bb5
Hersteller: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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BZX55C33 R0G
BZX55C33 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
Mindestbestellmenge: 240
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BZX55C3V6 R0G
BZX55C3V6 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
auf Bestellung 1648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
749+0.096 EUR
1013+0.071 EUR
1330+0.054 EUR
1493+0.048 EUR
1648+0.043 EUR
Mindestbestellmenge: 358
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BZX55C36 R0G
BZX55C36 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
Mindestbestellmenge: 220
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BZX55C39 R0G
BZX55C39 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
940+0.076 EUR
Mindestbestellmenge: 940
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BZX55C30 R0G
BZX55C30 R0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
TSM950N10CW RPG TSM950N10_D1807.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMCJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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SS23M SS22M SERIES_M2103.pdf
SS23M
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
511+0.14 EUR
747+0.096 EUR
782+0.092 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
SS23MH SS22MH SERIES_A2103.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TQM043NH04LCR RLG TQM043NH04LCR_C2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 100W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 4.3mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 100W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TQM025NH04LCR RLG TQM025NH04LCR_B2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 136W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 63.3nC
On-state resistance: 2.5mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 136W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM019NH04LCR RLG TQM019NH04LCR_B2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 1.9mΩ
Drain current: 100A
Gate-source voltage: ±16V
Power dissipation: 150W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM032NH04LCR RLG TQM032NH04LCR_C2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 115W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 3.2mΩ
Drain current: 81A
Gate-source voltage: ±16V
Power dissipation: 115W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM056NH04LCR RLG TQM056NH04LCR_C2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 78.9W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 30.4nC
On-state resistance: 5.6mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 78.9W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TQM070NH04LCR RLG TQM070NH04LCR_D2309.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
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TSM150NB04LCR RLG TSM150NB04LCR_B1804.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Case: PDFN56
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 15mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 19W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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SMBJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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SMBJ58AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
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SMCJ20CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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TSD30H100CW MNG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
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TSM10NC65CF C0G
TSM10NC65CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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TSM126CX RFG TSM126_VerA14.pdf
TSM126CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM190N08CZ C0G TSM190N08_B15.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM100N06CZ C0G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAD9619922155E0C7&compId=TSM100N06.pdf?ci_sign=6ec68f0dff1607077a48863009234b1d4e2325a9
TSM100N06CZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NB380CF C0G
TSM60NB380CF C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CH C5G pdf.php?pn=TSM60NB380CH
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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