Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (66562) > Seite 1109 nach 1110
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RS1GLWH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; SOD123W; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TSM2N7002AKCU RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 298mW Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TSM2N7002AKDCU6 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363 Drain-source voltage: 60V Drain current: 0.22A On-state resistance: 2.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.24W Polarisation: unipolar Kind of package: tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
Produkt ist nicht verfügbar |
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BZX85C11 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 11V; 20mA; reel,tape; DO41; single diode Tolerance: ±5% Mounting: THT Leakage current: 0.5µA Power dissipation: 1.3W Zener current: 20mA Kind of package: reel; tape Type of diode: Zener Zener voltage: 11V Case: DO41 Semiconductor structure: single diode |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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1PGSMB5934 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Zener current: 63mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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SF3002PT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 30A; TO247AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A Semiconductor structure: common cathode; double Case: TO247AD Features of semiconductor devices: superfast switching |
Produkt ist nicht verfügbar |
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TS432BCX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23; reel,tape Mounting: SMD Reference voltage: 1.24V Tolerance: ±0.5% Case: SOT23 Operating temperature: 0...70°C Maximum output current: 0.1A Kind of package: reel; tape Operating voltage: 1.24...16V Type of integrated circuit: voltage reference source |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2951CS33 RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOP8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.38V Output voltage: 3.3V Output current: 0.15A Case: SOP8 Mounting: SMD Manufacturer series: TS2951 Operating temperature: -40...125°C Tolerance: ±0.1% Number of channels: 1 Input voltage: 0...30V |
Produkt ist nicht verfügbar |
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US1KH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BAV19W RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V; 410mW Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 625mA Power dissipation: 0.41W Kind of package: reel; tape |
auf Bestellung 1001 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
BC817-16 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23-3 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMF4L26AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS22 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMB Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS22M | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: microSMA Max. off-state voltage: 20V Max. forward voltage: 0.6V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 25A |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SS22L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: subSMA Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S2VH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1.4kV; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.4kV Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ES3DVH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS320 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMC Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 75A |
auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) |
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SS320H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMC Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS320LW | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD123W Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS320LWH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD123W Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MBRAD545H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS23MH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MBRI30100CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SMCJ18CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 53A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
KBU803G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
P4KE18A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1V Max. forward impulse current: 16.5A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TSM950N10CW RPG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.1A Power dissipation: 9W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TSM60NE180CIT C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB Drain-source voltage: 600V Drain current: 13A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Gate charge: 34nC Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: ITO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BAV19WS RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323F Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SS215 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Case: SMB Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TS358CD C3G | TAIWAN SEMICONDUCTOR |
![]() Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.4V/μs Operating temperature: 0...70°C Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: tube Input bias current: 0.5µA Input offset current: 150nA |
auf Bestellung 2138 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Features of semiconductor devices: glass passivated Capacitance: 10pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TPMR10JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TPMR10GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 10A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TPMR6GH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TPMR6JH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SMAJ18CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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S1G M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 1A Reverse recovery time: 1.5µs Max. forward impulse current: 40A |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SF806GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 4Ax2; TO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 4A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 8A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SR810 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Case: DO201AD |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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BZD27C18P | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode Case: subSMA Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Semiconductor structure: single diode Tolerance: ±6% Zener voltage: 18V Type of diode: Zener |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BZD27C24P | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 24V; SMD; reel,tape; subSMA; single diode Case: subSMA Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Semiconductor structure: single diode Tolerance: ±5% Zener voltage: 24V Type of diode: Zener |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BZD27C12P | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 12V; SMD; reel,tape; subSMA; single diode Case: subSMA Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Semiconductor structure: single diode Tolerance: ±5% Zener voltage: 12V Type of diode: Zener |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BZD27C200P | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 200V; SMD; reel,tape; subSMA; single diode Case: subSMA Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Semiconductor structure: single diode Tolerance: ±6% Zener voltage: 200V Type of diode: Zener |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SFT16G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 400V; 1A; TS1 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TS1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SMAJ40A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BZX85C30 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 30V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 8mA Kind of package: reel; tape |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMA15A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
P4SMA15AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 20A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Application: automotive industry Manufacturer series: P4SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1PGSMB5927 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Zener current: 125mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2323CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23 Case: SOT23 Drain-source voltage: -20V Drain current: -4.7A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: tape Gate charge: 19nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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TQM84KDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363 Drain-source voltage: -60V Drain current: -0.17A On-state resistance: 6Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Kind of package: tape Gate charge: 1.9nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TQM138KDCU6 RFG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363 Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 1.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.32W Polarisation: unipolar Kind of package: tape Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SOT363 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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P6KE36CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; 600W; reel,tape Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Manufacturer series: P6KE |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33A | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 5380 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ48CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TSM130NB06CR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Drain-source voltage: 60V Drain current: 10A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tape Gate charge: 36nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TSM130NB06LCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Drain-source voltage: 60V Drain current: 10A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tape Gate charge: 37nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
RS1GLWH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM2N7002AKCU RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSM2N7002AKDCU6 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Drain-source voltage: 60V
Drain current: 0.22A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.24W
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Drain-source voltage: 60V
Drain current: 0.22A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.24W
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX85C11 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; 20mA; reel,tape; DO41; single diode
Tolerance: ±5%
Mounting: THT
Leakage current: 0.5µA
Power dissipation: 1.3W
Zener current: 20mA
Kind of package: reel; tape
Type of diode: Zener
Zener voltage: 11V
Case: DO41
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; 20mA; reel,tape; DO41; single diode
Tolerance: ±5%
Mounting: THT
Leakage current: 0.5µA
Power dissipation: 1.3W
Zener current: 20mA
Kind of package: reel; tape
Type of diode: Zener
Zener voltage: 11V
Case: DO41
Semiconductor structure: single diode
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
520+ | 0.14 EUR |
1PGSMB5934 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Zener current: 63mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Zener current: 63mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
153+ | 0.47 EUR |
192+ | 0.37 EUR |
211+ | 0.34 EUR |
SF3002PT |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; TO247AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; TO247AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Features of semiconductor devices: superfast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TS432BCX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23; reel,tape
Mounting: SMD
Reference voltage: 1.24V
Tolerance: ±0.5%
Case: SOT23
Operating temperature: 0...70°C
Maximum output current: 0.1A
Kind of package: reel; tape
Operating voltage: 1.24...16V
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23; reel,tape
Mounting: SMD
Reference voltage: 1.24V
Tolerance: ±0.5%
Case: SOT23
Operating temperature: 0...70°C
Maximum output current: 0.1A
Kind of package: reel; tape
Operating voltage: 1.24...16V
Type of integrated circuit: voltage reference source
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
235+ | 0.3 EUR |
TS2951CS33 RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.38V
Output voltage: 3.3V
Output current: 0.15A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2951
Operating temperature: -40...125°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 0...30V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.38V
Output voltage: 3.3V
Output current: 0.15A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2951
Operating temperature: -40...125°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 0...30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
US1KH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAV19W RHG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V; 410mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.41W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V; 410mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.41W
Kind of package: reel; tape
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BC817-16 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23-3
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23-3
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1645+ | 0.043 EUR |
2273+ | 0.031 EUR |
2476+ | 0.029 EUR |
2591+ | 0.028 EUR |
2891+ | 0.025 EUR |
3000+ | 0.024 EUR |
SMF4L26AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS22 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS22M |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: microSMA
Max. off-state voltage: 20V
Max. forward voltage: 0.6V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: microSMA
Max. off-state voltage: 20V
Max. forward voltage: 0.6V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
385+ | 0.19 EUR |
512+ | 0.14 EUR |
745+ | 0.096 EUR |
787+ | 0.091 EUR |
SS22L |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: subSMA
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: subSMA
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S2VH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.4kV; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.4kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.4kV; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.4kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ES3DVH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS320 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMC
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMC
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
249+ | 0.29 EUR |
360+ | 0.2 EUR |
381+ | 0.19 EUR |
SS320H |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMC
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMC
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS320LW |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS320LWH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123W
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBRAD545H |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS23MH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBRI30100CT |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Produkt ist nicht verfügbar
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SMCJ18CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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KBU803G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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P4KE18A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 17.1V; 16.5A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 16.5A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Produkt ist nicht verfügbar
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TSM950N10CW RPG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NE180CIT C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: ITO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: ITO220AB
Produkt ist nicht verfügbar
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BAV19WS RRG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS215 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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TS358CD C3G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
auf Bestellung 2138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
137+ | 0.52 EUR |
163+ | 0.44 EUR |
184+ | 0.39 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
1N4007G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Produkt ist nicht verfügbar
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TPMR10JH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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TPMR10GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TPMR6GH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TPMR6JH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SMAJ18CA | ![]() |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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S1G M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Reverse recovery time: 1.5µs
Max. forward impulse current: 40A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Reverse recovery time: 1.5µs
Max. forward impulse current: 40A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
SF806GH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 8A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 8A
Application: automotive industry
Produkt ist nicht verfügbar
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SR810 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
117+ | 0.61 EUR |
BZD27C18P |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±6%
Zener voltage: 18V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±6%
Zener voltage: 18V
Type of diode: Zener
Produkt ist nicht verfügbar
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BZD27C24P |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±5%
Zener voltage: 24V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±5%
Zener voltage: 24V
Type of diode: Zener
Produkt ist nicht verfügbar
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BZD27C12P |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±5%
Zener voltage: 12V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±5%
Zener voltage: 12V
Type of diode: Zener
Produkt ist nicht verfügbar
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BZD27C200P |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 200V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±6%
Zener voltage: 200V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 200V; SMD; reel,tape; subSMA; single diode
Case: subSMA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±6%
Zener voltage: 200V
Type of diode: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen
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SFT16G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
Produkt ist nicht verfügbar
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SMAJ40A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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BZX85C30 R0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: reel; tape
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
329+ | 0.22 EUR |
355+ | 0.2 EUR |
P4SMA15A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA15AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Application: automotive industry
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Application: automotive industry
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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1PGSMB5927 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
101+ | 0.72 EUR |
TSM2323CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.7A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.7A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
92+ | 0.77 EUR |
TQM84KDCU6 RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363
Drain-source voltage: -60V
Drain current: -0.17A
On-state resistance: 6Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -170mA; 320mW; SOT363
Drain-source voltage: -60V
Drain current: -0.17A
On-state resistance: 6Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Produkt ist nicht verfügbar
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TQM138KDCU6 RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 320mA; 320mW; SOT363
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Kind of package: tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT363
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P6KE36CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12.6A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
222+ | 0.32 EUR |
225+ | 0.31 EUR |
P6SMB33A | ![]() |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 5380 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
477+ | 0.15 EUR |
618+ | 0.12 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
P6SMB33AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.18 EUR |
SMAJ48CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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TSM130NB06CR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Produkt ist nicht verfügbar
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TSM130NB06LCR RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tape
Gate charge: 37nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH