Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (47979) > Seite 800 nach 800
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BZX84C4V7 RFG | TAIWAN SEMICONDUCTOR |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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| SR110 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV Case: DO41 Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.85V Load current: 1A Max. off-state voltage: 0.1kV |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2596SCS50 RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...24V DC Output voltage: 5V DC Output current: 2A Case: SOP8 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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P4SMA15A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 20A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 1N5408G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD Mounting: THT Load current: 3A Max. forward impulse current: 125A Max. off-state voltage: 1kV Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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TSM60NB190CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 33.8W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM60NB190CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.8A Power dissipation: 150.6W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| BZW04-13 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.4kW; 14.3V; 19A; unidirectional; DO41; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 19A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
Produkt ist nicht verfügbar |
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| BZW04-13B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 14.3V; 19A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Max. forward impulse current: 19A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 |
Produkt ist nicht verfügbar |
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| MBRAD2060H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 20A; reel,tape Max. forward voltage: 0.75V Load current: 20A Max. off-state voltage: 60V Application: automotive industry Semiconductor structure: single diode Case: thinDPAK Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
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| TS19501CB10H RBG | TAIWAN SEMICONDUCTOR |
Category: LED drivers Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1 Type of integrated circuit: driver Topology: boost; buck-boost; SEPIC Kind of integrated circuit: LED driver Case: MSOP10 Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Application: automotive industry Operating voltage: 8...38V DC Frequency: 70...700kHz Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP |
Produkt ist nicht verfügbar |
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| TS19503CB10H RBG | TAIWAN SEMICONDUCTOR |
Category: LED drivers Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED driver Case: MSOP10EP Output current: 2A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Application: for LED applications Operating voltage: 4.5...75V DC Frequency: 1MHz |
Produkt ist nicht verfügbar |
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| SMBJ18A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SMCJ85CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 11.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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ES1GL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: subSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES1GLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES1GALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| ES1GFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES1GFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| ES1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| ES1GLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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SS13 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 6414 Stücke: Lieferzeit 14-21 Tag (e) |
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SS13L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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SS13M | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM025NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 113nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| TSM025NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SMAJ30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
Produkt ist nicht verfügbar |
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| RMB2S | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
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P6SMB36A R4 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB150CA | TAIWAN SEMICONDUCTOR |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMB Leakage current: 1µA Max. forward impulse current: 3A Max. off-state voltage: 128V Breakdown voltage: 150V Peak pulse power dissipation: 0.6kW |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2305CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 55mΩ Mounting: SMD Gate charge: 20nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| GBU1006 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| SS14 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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TS2596SCS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...24V DC Output voltage: 1.23...19.5V DC Output current: 2A Case: SOP8 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| TS2596CM533 RNG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 3.3V DC Output current: 3A Case: D2PAK-5 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BZX84C4V7 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| SR110 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Load current: 1A
Max. off-state voltage: 0.1kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Load current: 1A
Max. off-state voltage: 0.1kV
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 313+ | 0.23 EUR |
| 538+ | 0.13 EUR |
| TS2596SCS50 RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P4SMA15A M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| P6SMB15CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 190+ | 0.37 EUR |
| SMBJ12CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5408G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| TSM60NB190CI C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| TSM60NB190CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 150.6W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 150.6W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZW04-13 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 14.3V; 19A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 14.3V; 19A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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| BZW04-13B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 19A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 19A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Produkt ist nicht verfügbar
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| MBRAD2060H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 20A; reel,tape
Max. forward voltage: 0.75V
Load current: 20A
Max. off-state voltage: 60V
Application: automotive industry
Semiconductor structure: single diode
Case: thinDPAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 20A; reel,tape
Max. forward voltage: 0.75V
Load current: 20A
Max. off-state voltage: 60V
Application: automotive industry
Semiconductor structure: single diode
Case: thinDPAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS19501CB10H RBG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1
Type of integrated circuit: driver
Topology: boost; buck-boost; SEPIC
Kind of integrated circuit: LED driver
Case: MSOP10
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Operating voltage: 8...38V DC
Frequency: 70...700kHz
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP
Category: LED drivers
Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1
Type of integrated circuit: driver
Topology: boost; buck-boost; SEPIC
Kind of integrated circuit: LED driver
Case: MSOP10
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Operating voltage: 8...38V DC
Frequency: 70...700kHz
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS19503CB10H RBG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: MSOP10EP
Output current: 2A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: for LED applications
Operating voltage: 4.5...75V DC
Frequency: 1MHz
Category: LED drivers
Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: MSOP10EP
Output current: 2A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: for LED applications
Operating voltage: 4.5...75V DC
Frequency: 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ18A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ85CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GL |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 242+ | 0.3 EUR |
| 400+ | 0.17 EUR |
| ES1GLW |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GAL |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GALH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GFS |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GFSH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1GLWH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS13 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 6414 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 676+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 1000+ | 0.093 EUR |
| 2500+ | 0.084 EUR |
| SS13L |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 397+ | 0.18 EUR |
| 430+ | 0.17 EUR |
| 515+ | 0.14 EUR |
| SS13M |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 290+ | 0.25 EUR |
| 486+ | 0.15 EUR |
| 667+ | 0.11 EUR |
| 1000+ | 0.094 EUR |
| TSM025NB04CR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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| TSM025NB04LCR RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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| SMAJ30CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| RMB2S |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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| P6SMB36A R4 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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| P6SMB150CA | |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 3A
Max. off-state voltage: 128V
Breakdown voltage: 150V
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 3A
Max. off-state voltage: 128V
Breakdown voltage: 150V
Peak pulse power dissipation: 0.6kW
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 179+ | 0.4 EUR |
| 186+ | 0.39 EUR |
| TSM2305CX RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
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| GBU1006 | |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| SS14 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| TS2596SCS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 1.23...19.5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 1.23...19.5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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| TS2596CM533 RNG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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