| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT20J341,S4X(S | TOSHIBA |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO220FP Kind of package: tube Turn-on time: 0.2µs Turn-off time: 370ns Collector current: 11A Gate-emitter voltage: ±25V Power dissipation: 45W Pulsed collector current: 80A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
74VHCT245AFT(BJ) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; TSSOP20; VHCT; 4.9ns Type of integrated circuit: digital Manufacturer series: VHCT Technology: C²MOS Case: TSSOP20 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Delay time: 4.9ns Terminal pitch: 0.65mm Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bus transceiver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ULN2003APG | TOSHIBA |
 Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; DIP16; 0.5A; 2÷50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: DIP16 Output current: 0.5A Output voltage: 2...50V Number of channels: 7 Mounting: THT Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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74VHCT14AFT(BJ) | TOSHIBA |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; C²MOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷125°C Type of integrated circuit: digital Number of channels: hex; 6 Technology: C²MOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Family: VHCT Supply voltage: 4.5...5.5V DC Kind of gate: NOT Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 5ns Terminal pitch: 0.65mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TMBT3904,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.32W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.2A Power dissipation: 0.32W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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74VHC05FT(BE) | TOSHIBA |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: VHC Kind of output: open drain Delay time: 3.8ns Terminal pitch: 0.65mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
TBD62084AFG(Z,EL) | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; SOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: SOP18 Output current: 0.5A Output voltage: 2...50V Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
GT50JR21(STA1,E,S) | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN Type of transistor: IGBT Power dissipation: 230W Case: TO3PN Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 430ns Turn-off time: 720ns Gate-emitter voltage: ±25V Collector current: 49A Pulsed collector current: 100A |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH1R306PL,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 170W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TPH6R30ANL,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 54W; SOP8A; ESD On-state resistance: 10.3mΩ Gate-source voltage: ±20V Drain current: 45A Power dissipation: 54W Drain-source voltage: 100V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOP8A Polarisation: unipolar Gate charge: 55nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| 2SK2313(F) | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC573FT(BJ) | TOSHIBA |
Category: Latches Description: IC: digital; D latch; Ch: 8; C²MOS; 2÷5.5VDC; SMD; TSSOP20; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: C²MOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...125°C Family: VHC Kind of output: 3-state Delay time: 4.5ns Terminal pitch: 0.65mm Supply voltage: 2...5.5V DC Kind of package: reel; tape Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TPH2R306NH,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Power dissipation: 78W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TPH1R204PL,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A Polarisation: unipolar Gate charge: 74nC On-state resistance: 1.24Ω Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 132W Drain current: 246A Case: SOP8A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| TPH1R204PL1,LQ(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 150A; 170W On-state resistance: 1mΩ Drain-source voltage: 40V Power dissipation: 170W Drain current: 150A Type of transistor: N-MOSFET Mounting: SMD |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLP5751H(D4TP4.E(T | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; 3mA Type of optocoupler: optocoupler Mounting: SMD Kind of output: totem pole Turn-off time: 8ns Turn-on time: 15ns Collector current: 3mA Number of channels: 1 Insulation voltage: 5kV Slew rate: 35kV/μs Case: SO6L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
RN2405,LXGF(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC59 Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GT20J341,S4X(S |
|
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Kind of package: tube
Turn-on time: 0.2µs
Turn-off time: 370ns
Collector current: 11A
Gate-emitter voltage: ±25V
Power dissipation: 45W
Pulsed collector current: 80A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Kind of package: tube
Turn-on time: 0.2µs
Turn-off time: 370ns
Collector current: 11A
Gate-emitter voltage: ±25V
Power dissipation: 45W
Pulsed collector current: 80A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT245AFT(BJ) |
|
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; TSSOP20; VHCT; 4.9ns
Type of integrated circuit: digital
Manufacturer series: VHCT
Technology: C²MOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 4.9ns
Terminal pitch: 0.65mm
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; TSSOP20; VHCT; 4.9ns
Type of integrated circuit: digital
Manufacturer series: VHCT
Technology: C²MOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 4.9ns
Terminal pitch: 0.65mm
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ULN2003APG | |
|
Hersteller: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 0.5A; 2÷50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 0.5A; 2÷50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT14AFT(BJ) |
|
Hersteller: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; C²MOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 5ns
Terminal pitch: 0.65mm
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; C²MOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 5ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TMBT3904,LM(T |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.32W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.2A; 0.32W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC05FT(BE) |
|
Hersteller: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHC
Kind of output: open drain
Delay time: 3.8ns
Terminal pitch: 0.65mm
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHC
Kind of output: open drain
Delay time: 3.8ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TBD62084AFG(Z,EL) |
|
Hersteller: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SOP18
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SOP18
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GT50JR21(STA1,E,S) |
|
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Type of transistor: IGBT
Power dissipation: 230W
Case: TO3PN
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 430ns
Turn-off time: 720ns
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Type of transistor: IGBT
Power dissipation: 230W
Case: TO3PN
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 430ns
Turn-off time: 720ns
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.82 EUR |
| 14+ | 5.22 EUR |
| 25+ | 4.62 EUR |
| 100+ | 4.16 EUR |
| TPH1R306PL,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH6R30ANL,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 54W; SOP8A; ESD
On-state resistance: 10.3mΩ
Gate-source voltage: ±20V
Drain current: 45A
Power dissipation: 54W
Drain-source voltage: 100V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8A
Polarisation: unipolar
Gate charge: 55nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 54W; SOP8A; ESD
On-state resistance: 10.3mΩ
Gate-source voltage: ±20V
Drain current: 45A
Power dissipation: 54W
Drain-source voltage: 100V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8A
Polarisation: unipolar
Gate charge: 55nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SK2313(F) |
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 5.46 EUR |
| 100+ | 4.92 EUR |
| 74VHC573FT(BJ) |
|
Hersteller: TOSHIBA
Category: Latches
Description: IC: digital; D latch; Ch: 8; C²MOS; 2÷5.5VDC; SMD; TSSOP20; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: C²MOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Family: VHC
Kind of output: 3-state
Delay time: 4.5ns
Terminal pitch: 0.65mm
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Latches
Description: IC: digital; D latch; Ch: 8; C²MOS; 2÷5.5VDC; SMD; TSSOP20; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: C²MOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Family: VHC
Kind of output: 3-state
Delay time: 4.5ns
Terminal pitch: 0.65mm
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH2R306NH,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH1R204PL,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 1.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 132W
Drain current: 246A
Case: SOP8A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 246A; 132W; SOP8A
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 1.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 132W
Drain current: 246A
Case: SOP8A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH1R204PL1,LQ(M |
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 150A; 170W
On-state resistance: 1mΩ
Drain-source voltage: 40V
Power dissipation: 170W
Drain current: 150A
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 150A; 170W
On-state resistance: 1mΩ
Drain-source voltage: 40V
Power dissipation: 170W
Drain current: 150A
Type of transistor: N-MOSFET
Mounting: SMD
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 1.06 EUR |
| TLP5751H(D4TP4.E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; 3mA
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: totem pole
Turn-off time: 8ns
Turn-on time: 15ns
Collector current: 3mA
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 35kV/μs
Case: SO6L
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; 3mA
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: totem pole
Turn-off time: 8ns
Turn-on time: 15ns
Collector current: 3mA
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 35kV/μs
Case: SO6L
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| RN2405,LXGF(T |
|
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC59
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC59
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH