Die Produkte vishay general semiconductor - diodes division

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VS-8EWS08STRR-M3 VS-8EWS08STRR-M3 vs-8ews08sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12STRL-M3 VS-8EWS12STRL-M3 vs-8ews08sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A D-PAK
Base Part Number: 8EWS12
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12STR-M3 VS-8EWS12STR-M3 vs-8ews08sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A D-PAK
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12STRR-M3 VS-8EWS12STRR-M3 vs-8ews08sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A D-PAK
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS12
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETH06-N3 VS-8ETH06-N3 vs-8eth06fp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Package / Case: TO-220-2
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Mounting Type: Through Hole
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10SPBF VS-10ETF10SPBF VS-10ETF..(10,12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 10A TO263AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08SPBF VS-20ETS08SPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO263AB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10TQ035-N3 VS-10TQ035-N3 VS-10TQ(PbF,M3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 35V 10A TO-220AC
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C6V8P-E3-08 BZD27C6V8P-E3-08 bzd27series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 6.8V 800MW DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
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VS-8TQ080-N3 VS-8TQ080-N3 VS-8TQ...GPBF;-N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 80V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1645TRLPBF VS-MBRB1645TRLPBF VS-MBRB16(35,45)PBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 16A 45V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1645TRRPBF VS-MBRB1645TRRPBF VS-MBRB16(35,45)PBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 16A 45V D2PAK
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12SPBF VS-10ETF12SPBF VS-10ETF..(10,12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO263AB
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1635TRLPBF VS-MBRB1635TRLPBF VS-MBRB16(35,45)PBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 16A 35V D2PAK
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRB16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1635TRRPBF VS-MBRB1635TRRPBF VS-MBRB16(35,45)PBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 16A 35V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-EPH3006-F3 VS-EPH3006-F3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO247AC
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Part Status: Obsolete
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Mounting Type: Through Hole
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 30A
Package / Case: TO-247-2
Packaging: Tube
Supplier Device Package: TO-247AC Modified
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08STRLPBF VS-20ETS08STRLPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO263AB
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08STRRPBF VS-20ETS08STRRPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO263AB
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MUR1520-N3 VS-MUR1520-N3 VS-MUR1520(PBF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 15A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10STRLPBF VS-10ETF10STRLPBF VS-10ETF..(10,12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12STRLPBF VS-10ETF12STRLPBF VS-10ETF..(10,12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12STRRPBF VS-10ETF12STRRPBF VS-10ETF..(10,12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETL06FP-N3 VS-8ETL06FP-N3 vs-8eth06fp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 25ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20TQ045-N3 VS-20TQ045-N3 20TQ(035,040,045)PbF,N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20A TO-220
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETS12-M3 VS-10ETS12-M3 vs-10etsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETX06FP-N3 VS-8ETX06FP-N3 vs-8etx06fp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220FP
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 17ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12SPBF VS-20ETS12SPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D²PAK)
Packaging: Tube
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETH06FP-N3 VS-8ETH06FP-N3 vs-8eth06fp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Packaging: Tube
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-220-2 Full Pack
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20TQ040-N3 VS-20TQ040-N3 20TQ(035,040,045)PbF,N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20A TO-220
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 2.7 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETS08-M3 VS-10ETS08-M3 vs-10etsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 10A TO220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2
Mounting Type: Through Hole
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
VS-8EWF02STRL-M3 VS-8EWF02STRL-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 8A D-PAK
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 8EWF02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF02STRR-M3 VS-8EWF02STRR-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 8A D-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 55ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04STRL-M3 VS-8EWF04STRL-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 8A D-PAK
Part Status: Active
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04STRR-M3 VS-8EWF04STRR-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 8A D-PAK
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF06STRL-M3 VS-8EWF06STRL-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A D-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF06STRR-M3 VS-8EWF06STRR-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF10STRL-M3 VS-8EWF10STRL-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 8A D-PAK
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF10STRR-M3 VS-8EWF10STRR-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 8A D-PAK
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12STRL-M3 VS-8EWF12STRL-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A D-PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12STRR-M3 VS-8EWF12STRR-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A D-PAK
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12S-M3 VS-8EWF12S-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A TO252
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-252, (D-Pak)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
VS-8EWF02STR-M3 VS-8EWF02STR-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 8A D-PAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 55ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04STR-M3 VS-8EWF04STR-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 8A D-PAK
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF06STR-M3 VS-8EWF06STR-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A D-PAK
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF10STR-M3 VS-8EWF10STR-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 8A D-PAK
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12STR-M3 VS-8EWF12STR-M3 vs-8ewf12sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VT40L45PW-M3/4W VT40L45PW-M3/4W Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 20A TMBS
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 45V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PW
Base Part Number: VT40L45
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506-1HM3 VS-ETH1506-1HM3 vs-eth1506shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO262AA
Current - Reverse Leakage @ Vr: 15µA @ 600V
Reverse Recovery Time (trr): 42ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506SHM3 VS-ETH1506SHM3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO263AB
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 42 ns
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBR1645-N3 VS-MBR1645-N3 VS-MBR16(PbF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 16A 45V TO-220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12STRRPBF VS-20ETS12STRRPBF VS-20ETS(08-12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
VS-EPH3006HN3 VS-EPH3006HN3 vs-aph3006hn3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO247AC
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 30A
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBR1635-N3 VS-MBR1635-N3 VS-MBR16(PbF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 16A 35V TO-220AC
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506STRLHM3 VS-ETH1506STRLHM3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO263AB
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506STRRHM3 VS-ETH1506STRRHM3 vs-eth1506s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO263AB
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 15A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETL06FP-N3 VS-15ETL06FP-N3 VS-15ETL06PbF_FPPbf_VS-15ETL06-N3_FP-N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO220FP
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 29 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-2 Full Pack
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5+ 5.69 EUR
10+ 5.12 EUR
100+ 4.11 EUR
500+ 3.38 EUR
1000+ 2.9 EUR
VS-10ETS08FP-M3 VS-10ETS08FP-M3 vs-10ets08_12fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10STRRPBF VS-10ETF10STRRPBF VS-10ETF..(10,12)SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60SHM3 VS-HFA25TB60SHM3 vs-hfa25tb60shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A TO263AB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10-M3 VS-10ETF10-M3 vs-10etf1m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF02-M3 VS-10ETF02-M3 vs-10etf0m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 10A TO220AC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60STLHM3 VS-HFA25TB60STLHM3 vs-hfa25tb60shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A TO263AB
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60STRHM3 VS-HFA25TB60STRHM3 vs-hfa25tb60shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A TO263AB
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF06-M3 VS-10ETF06-M3 vs-10etf0m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006-1HM3 VS-ETH3006-1HM3 vs-eth3006shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO262AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006SHM3 VS-ETH3006SHM3 vs-eth3006shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETU3006-1HM3 VS-ETU3006-1HM3 vs-etu3006hsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO262AA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 26ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Current - Average Rectified (Io): 30A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETU3006SHM3 VS-ETU3006SHM3 vs-etu3006hsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO263AB
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Standard
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF02FP-M3 VS-10ETF02FP-M3 vs-10etf02_04_06fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 10A TO220FP
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF06FP-M3 VS-10ETF06FP-M3 vs-10etf02_04_06fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 10A TO220FP
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10FP-M3 VS-10ETF10FP-M3 vs-10etf10_12fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 10A TO220FP
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10SPBF VS-20ETF10SPBF VS-20ETFxxSPBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12FP-M3 VS-10ETF12FP-M3 vs-10etf10_12fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Reverse Recovery Time (trr): 310 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08TB120-N3 VS-HFA08TB120-N3 VS-HFA08TB120(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A TO220AC
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 95 ns
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30ETH06-N3 VS-30ETH06-N3 packaging.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 31 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2
Mounting Type: Through Hole
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF04FP-M3 VS-10ETF04FP-M3 vs-10etf02_04_06fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 10A TO220FP
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Base Part Number: 10ETF04
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V80100PW-M3R/4W v80100pw.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY TO3PW
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature - Junction: -40°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-3PW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006STRLHM3 VS-ETH3006STRLHM3 vs-eth3006shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006STRRHM3 VS-ETH3006STRRHM3 vs-eth3006shm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO263AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-19TQ015STRLPBF VS-19TQ015STRLPBF VS-19TQ015SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 19A 15V D2PAK
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-19TQ015STRRPBF VS-19TQ015STRRPBF VS-19TQ015SPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 19A 15V D2PAK
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETU3006STRLHM3 VS-ETU3006STRLHM3 vs-etu3006hsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO263AB
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-ETU3006STRRHM3 VS-ETU3006STRRHM3 vs-etu3006hsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO263AB
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-25ETS12STRLPBF VS-25ETS12STRLPBF VS-25ETS..SPbF_Series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 25A TO263AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 25ETS12
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40EPS16PBF VS-40EPS16PBF vs-40eps16-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 40A TO247AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10STRLPBF VS-20ETF10STRLPBF VS-20ETFxxSPBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12-M3 VS-20ETS12-M3 vs-20etsm3_vs-20atsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30ETH06FP-N3 VS-30ETH06FP-N3 vs-30eth06fp-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO220FP
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS16-M3 VS-20ETS16-M3 vs-20ets16-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 20A TO220AB
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12FP-M3 VS-20ETS12FP-M3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO220FP
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60HN3 VS-HFA25TB60HN3 VS-HFA25TB60HN3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A TO220AC
Part Status: Active
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA16PB120HN3 VS-HFA16PB120HN3 vs-hfa16pb120hn3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 16A TO247AC
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 16A
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF08-M3 VS-20ETF08-M3 vs-20etf08s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO220AC
Base Part Number: 20ETF08
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Reverse Recovery Time (trr): 95ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10-M3 VS-20ETF10-M3 vs-20etf08s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 20A TO220AC
Reverse Recovery Time (trr): 95ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF02-M3 VS-20ETF02-M3 vs-20etfm3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 20A TO220AC
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 200V
Base Part Number: 20ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10FP-M3 VS-20ETF10FP-M3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 20A TO220FP
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 95ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPS16PBF VS-60EPS16PBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 60A TO247AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 60EPS16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08PB120-N3 VS-HFA08PB120-N3 vs-hfa08pb1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A TO247AC
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 192 Stücke - Preis und Lieferfrist anzeigen
VS-30EPH06HN3 VS-30EPH06HN3 vs-30eph06h.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO247AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-80APS12-M3 VS-80APS12-M3 vs-80aps-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 80A TO247AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 80APS12
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
VS-8EWS08STRR-M3 vs-8ews08sm.pdf
VS-8EWS08STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12STRL-M3 vs-8ews08sm.pdf
VS-8EWS12STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Base Part Number: 8EWS12
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12STR-M3 vs-8ews08sm.pdf
VS-8EWS12STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12STRR-M3 vs-8ews08sm.pdf
VS-8EWS12STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS12
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETH06-N3 vs-8eth06fp.pdf
VS-8ETH06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Package / Case: TO-220-2
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Mounting Type: Through Hole
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10SPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF10SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08SPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS08SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10TQ035-N3 VS-10TQ(PbF,M3).pdf
VS-10TQ035-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO-220AC
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C6V8P-E3-08 bzd27series.pdf
BZD27C6V8P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 800MW DO219AB
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
auf Bestellung 13 Stücke
Lieferzeit 21-28 Tag (e)
VS-8TQ080-N3 VS-8TQ...GPBF;-N3.pdf
VS-8TQ080-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1645TRLPBF VS-MBRB16(35,45)PBF.pdf
VS-MBRB1645TRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 16A 45V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1645TRRPBF VS-MBRB16(35,45)PBF.pdf
VS-MBRB1645TRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 16A 45V D2PAK
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12SPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF12SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1635TRLPBF VS-MBRB16(35,45)PBF.pdf
VS-MBRB1635TRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 16A 35V D2PAK
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRB16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRB1635TRRPBF VS-MBRB16(35,45)PBF.pdf
VS-MBRB1635TRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 16A 35V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-EPH3006-F3
VS-EPH3006-F3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AC
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Part Status: Obsolete
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Mounting Type: Through Hole
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 30A
Package / Case: TO-247-2
Packaging: Tube
Supplier Device Package: TO-247AC Modified
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08STRLPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS08STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08STRRPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS08STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MUR1520-N3 VS-MUR1520(PBF,N3).pdf
VS-MUR1520-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 15A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10STRLPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF10STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12STRLPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF12STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12STRRPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF12STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETL06FP-N3 vs-8eth06fp.pdf
VS-8ETL06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 25ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20TQ045-N3 20TQ(035,040,045)PbF,N3.pdf
VS-20TQ045-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A TO-220
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETS12-M3 vs-10etsm3.pdf
VS-10ETS12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETX06FP-N3 vs-8etx06fp.pdf
VS-8ETX06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220FP
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 17ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12SPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS12SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D²PAK)
Packaging: Tube
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETH06FP-N3 vs-8eth06fp.pdf
VS-8ETH06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Packaging: Tube
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-220-2 Full Pack
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20TQ040-N3 20TQ(035,040,045)PbF,N3.pdf
VS-20TQ040-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A TO-220
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 2.7 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETS08-M3 vs-10etsm3.pdf
VS-10ETS08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO220AC
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2
Mounting Type: Through Hole
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
VS-8EWF02STRL-M3 vs-8ewf02sm.pdf
VS-8EWF02STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A D-PAK
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 8EWF02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF02STRR-M3 vs-8ewf02sm.pdf
VS-8EWF02STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A D-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 55ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04STRL-M3 vs-8ewf02sm.pdf
VS-8EWF04STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A D-PAK
Part Status: Active
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04STRR-M3 vs-8ewf02sm.pdf
VS-8EWF04STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A D-PAK
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF06STRL-M3 vs-8ewf02sm.pdf
VS-8EWF06STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A D-PAK
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF06STRR-M3 vs-8ewf02sm.pdf
VS-8EWF06STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF10STRL-M3 vs-8ewf12sm.pdf
VS-8EWF10STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A D-PAK
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF10STRR-M3 vs-8ewf12sm.pdf
VS-8EWF10STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A D-PAK
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12STRL-M3 vs-8ewf12sm.pdf
VS-8EWF12STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12STRR-M3 vs-8ewf12sm.pdf
VS-8EWF12STRR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12S-M3 vs-8ewf12sm.pdf
VS-8EWF12S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO252
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-252, (D-Pak)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
VS-8EWF02STR-M3 vs-8ewf02sm.pdf
VS-8EWF02STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A D-PAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 55ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04STR-M3 vs-8ewf02sm.pdf
VS-8EWF04STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A D-PAK
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF06STR-M3 vs-8ewf02sm.pdf
VS-8EWF06STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A D-PAK
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF10STR-M3 vs-8ewf12sm.pdf
VS-8EWF10STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A D-PAK
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF12STR-M3 vs-8ewf12sm.pdf
VS-8EWF12STR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VT40L45PW-M3/4W
VT40L45PW-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TMBS
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 45V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PW
Base Part Number: VT40L45
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506-1HM3 vs-eth1506shm3.pdf
VS-ETH1506-1HM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262AA
Current - Reverse Leakage @ Vr: 15µA @ 600V
Reverse Recovery Time (trr): 42ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506SHM3
VS-ETH1506SHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 42 ns
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBR1645-N3 VS-MBR16(PbF,N3).pdf
VS-MBR1645-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 16A 45V TO-220AC
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12STRRPBF VS-20ETS(08-12)SPbF.pdf
VS-20ETS12STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
VS-EPH3006HN3 vs-aph3006hn3.pdf
VS-EPH3006HN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AC
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 30A
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBR1635-N3 VS-MBR16(PbF,N3).pdf
VS-MBR1635-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 16A 35V TO-220AC
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506STRLHM3
VS-ETH1506STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH1506STRRHM3 vs-eth1506s-m3.pdf
VS-ETH1506STRRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 15A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETL06FP-N3 VS-15ETL06PbF_FPPbf_VS-15ETL06-N3_FP-N3.pdf
VS-15ETL06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220FP
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 29 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-2 Full Pack
auf Bestellung 3573 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.69 EUR
10+ 5.12 EUR
100+ 4.11 EUR
500+ 3.38 EUR
1000+ 2.9 EUR
VS-10ETS08FP-M3 vs-10ets08_12fp-m3.pdf
VS-10ETS08FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10STRRPBF VS-10ETF..(10,12)SPbF.pdf
VS-10ETF10STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60SHM3 vs-hfa25tb60shm3.pdf
VS-HFA25TB60SHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO263AB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10-M3 vs-10etf1m3.pdf
VS-10ETF10-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF02-M3 vs-10etf0m3.pdf
VS-10ETF02-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60STLHM3 vs-hfa25tb60shm3.pdf
VS-HFA25TB60STLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO263AB
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60STRHM3 vs-hfa25tb60shm3.pdf
VS-HFA25TB60STRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO263AB
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF06-M3 vs-10etf0m3.pdf
VS-10ETF06-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006-1HM3 vs-eth3006shm3.pdf
VS-ETH3006-1HM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006SHM3 vs-eth3006shm3.pdf
VS-ETH3006SHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETU3006-1HM3 vs-etu3006hsm3.pdf
VS-ETU3006-1HM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262AA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 26ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Current - Average Rectified (Io): 30A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETU3006SHM3 vs-etu3006hsm3.pdf
VS-ETU3006SHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Standard
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF02FP-M3 vs-10etf02_04_06fp-m3.pdf
VS-10ETF02FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220FP
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF06FP-M3 vs-10etf02_04_06fp-m3.pdf
VS-10ETF06FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO220FP
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF10FP-M3 vs-10etf10_12fp-m3.pdf
VS-10ETF10FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220FP
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10SPBF VS-20ETFxxSPBF.pdf
VS-20ETF10SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF12FP-M3 vs-10etf10_12fp-m3.pdf
VS-10ETF12FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Reverse Recovery Time (trr): 310 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08TB120-N3 VS-HFA08TB120(PBF,-N3).pdf
VS-HFA08TB120-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO220AC
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 95 ns
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30ETH06-N3 packaging.pdf
VS-30ETH06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 31 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2
Mounting Type: Through Hole
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF04FP-M3 vs-10etf02_04_06fp-m3.pdf
VS-10ETF04FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO220FP
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Base Part Number: 10ETF04
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V80100PW-M3R/4W v80100pw.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY TO3PW
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature - Junction: -40°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-3PW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006STRLHM3 vs-eth3006shm3.pdf
VS-ETH3006STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETH3006STRRHM3 vs-eth3006shm3.pdf
VS-ETH3006STRRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-19TQ015STRLPBF VS-19TQ015SPbF.pdf
VS-19TQ015STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 19A 15V D2PAK
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-19TQ015STRRPBF VS-19TQ015SPbF.pdf
VS-19TQ015STRRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 19A 15V D2PAK
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-ETU3006STRLHM3 vs-etu3006hsm3.pdf
VS-ETU3006STRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1100 Stücke - Preis und Lieferfrist anzeigen
VS-ETU3006STRRHM3 vs-etu3006hsm3.pdf
VS-ETU3006STRRHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-25ETS12STRLPBF VS-25ETS..SPbF_Series.pdf
VS-25ETS12STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 25ETS12
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40EPS16PBF vs-40eps16-m3.pdf
VS-40EPS16PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 40A TO247AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10STRLPBF VS-20ETFxxSPBF.pdf
VS-20ETF10STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12-M3 vs-20etsm3_vs-20atsm3.pdf
VS-20ETS12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30ETH06FP-N3 vs-30eth06fp-n3.pdf
VS-30ETH06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO220FP
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS16-M3 vs-20ets16-m3.pdf
VS-20ETS16-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 20A TO220AB
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS12FP-M3
VS-20ETS12FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220FP
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA25TB60HN3 VS-HFA25TB60HN3.pdf
VS-HFA25TB60HN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO220AC
Part Status: Active
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA16PB120HN3 vs-hfa16pb120hn3.pdf
VS-HFA16PB120HN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO247AC
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 16A
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF08-M3 vs-20etf08s-m3.pdf
VS-20ETF08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220AC
Base Part Number: 20ETF08
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Reverse Recovery Time (trr): 95ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10-M3 vs-20etf08s-m3.pdf
VS-20ETF10-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO220AC
Reverse Recovery Time (trr): 95ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF02-M3 vs-20etfm3series.pdf
VS-20ETF02-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO220AC
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 200V
Base Part Number: 20ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF10FP-M3
VS-20ETF10FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO220FP
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 95ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPS16PBF
VS-60EPS16PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 60A TO247AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 60EPS16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08PB120-N3 vs-hfa08pb1.pdf
VS-HFA08PB120-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO247AC
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 192 Stücke - Preis und Lieferfrist anzeigen
VS-30EPH06HN3 vs-30eph06h.pdf
VS-30EPH06HN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
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VS-80APS12-M3 vs-80aps-m3series.pdf
VS-80APS12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 80A TO247AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 80APS12
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
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