Die Produkte vishay general semiconductor - diodes division
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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SE30AFB-M3/6A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1.4A DO221AC Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 100V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A Current - Average Rectified (Io): 1.4A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SE30 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4815 Stücke - Preis und Lieferfrist anzeigen
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| TVR10G-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE 1A 400V DO-204 Part Status: Obsolete Mounting Type: Through Hole Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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RS07J-M-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 500MA DO219AB Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VSSB410S-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.9A DO214AA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 250µA @ 100V Capacitance @ Vr, F: 230pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VS-10BQ060-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A SMB Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 80pF @ 5V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 365 Stücke - Preis und Lieferfrist anzeigen
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SB140-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 1A 40V DO-41 Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 1.8 µs Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS160-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RS07K-M-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 800V 500MA DO219AB Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 2µA @ 800V Reverse Recovery Time (trr): 300ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 800V Part Status: Active Diode Type: Standard Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: RS07 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RS07J-M-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 500MA DO219AB Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VSSB420S-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 1.8A DO214AA Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.8A (DC) Capacitance @ Vr, F: 120pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 150 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3058 Stücke - Preis und Lieferfrist anzeigen
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VSSB420S-M3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 1.8A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 1.8A (DC) Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 150 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5827 Stücke - Preis und Lieferfrist anzeigen
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SSA33L-M3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 3A 30V DO-214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
.jpg "V3PAL45-M3/I") |
V3PAL45-M3/I |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 3A 45V DO-221BC Base Part Number: V3PAL45 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-221BC (SMPA) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 450µA @ 45V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22710 Stücke - Preis und Lieferfrist anzeigen
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V4PAL45-M3/I |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 3A DO221BC Base Part Number: V4PAL45 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-221BC (SMPA) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Capacitance @ Vr, F: 450pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 450µA @ 45V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 570mV @ 4A Current - Average Rectified (Io): 3A (DC) Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25245 Stücke - Preis und Lieferfrist anzeigen
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MURS160-M3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214AA Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2960 Stücke - Preis und Lieferfrist anzeigen
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MURS240-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO214AA Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS260-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO214AA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS340S-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 10µA @ 400V Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS240-M3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO214AA Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 75 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS260-M3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS340S-M3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VS-15MQ040-M3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 1.5A 40V SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 134pF @ 10V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
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RGP10AHM3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Box (TB) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Base Part Number: RGP10 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10DHM3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GHM3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10JHM3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Mounting Type: Through Hole Diode Type: Standard Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10MHM3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10AHM3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Base Part Number: RGP10 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10DHM3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Reverse Recovery Time (trr): 150 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GHM3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10JHM3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10MHM3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 250ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
| TVR10GHM3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE 1A 400V DO-204 Part Status: Obsolete Mounting Type: Through Hole Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-10BQ100-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1A SMB Current - Reverse Leakage @ Vr: 500 µA @ 100 V Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 65pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGP02-16E-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 500MA DO204AL Part Status: Obsolete Packaging: Tape & Reel (TR) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1600V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGP02-17E-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.7KV 500MA DO204AL Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 1700V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1700V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGP02-18E-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.8KV 500MA DO204AL Voltage - DC Reverse (Vr) (Max): 1800V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1800V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGP02-20E-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 500MA DO204AL Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 5pF @ 4V, 1MHz Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 2000 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RMPG06BHE3_A/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 100V 150NS MPG06 Base Part Number: RMPG06 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06D-E3/100 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 200V 150NS MPG06 Mounting Type: Through Hole Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06DHE3_A/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 200V 150NS MPG06 Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 150ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06G-E3/100 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 400V 150NS MPG06 Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: RMPG06 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06GHE3_A/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 400V 150NS MPG06 Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06J-E3/100 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 600V 200NS MPG06 Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 200ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06JHE3_A/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 600V 200NS MPG06 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 200ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VSSA210-E3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.7A DO214AC Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150µA @ 100V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10D-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Part Status: Active Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10DHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10G-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10J-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10JHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10K-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10M-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10MHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS120-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AA Diode Type: Standard Current - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1A Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS120-M3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AA Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP02-16E-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 500MA DO204AL Current - Average Rectified (Io): 500mA Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGP02-17E-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.7KV 500MA DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 500mA Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGP02-18E-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.8KV 500MA DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 1800 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 500mA Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGP02-20E-M3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 500MA DO204AL Current - Average Rectified (Io): 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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SBYV26CHM3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Mounting Type: Through Hole Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SBYV26CHM3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Capacitance @ Vr, F: 45pF @ 4V, 1MHz Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06B-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 100V 150NS MPG06 Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Package / Case: MPG06, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Base Part Number: RMPG06 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06D-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 200V 150NS MPG06 Packaging: Tape & Box (TB) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RMPG06G-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 400V 150NS MPG06 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: MPG06 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: MPG06, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2637 Stücke - Preis und Lieferfrist anzeigen
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RMPG06J-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GPP 1A 600V 200NS MPG06 Packaging: Tape & Box (TB) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SSA33L-M3/61T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 3A 30V DO-214AC Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SB160-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 1A 60V DO-41 Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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UF4005-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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UF4006-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 75 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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SS210-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 1.5A 100V DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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SSB44-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 4A 40V DO214AA Current - Reverse Leakage @ Vr: 400 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
auf Bestellung 6400 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12970 Stücke - Preis und Lieferfrist anzeigen
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SS210-M3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 42pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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SSB44-M3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 4A 40V DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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SSB43L-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 4A 30V DO-214AC Current - Reverse Leakage @ Vr: 600µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A Current - Average Rectified (Io): 4A Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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SSB43L-M3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 4A 30V DO-214AA Current - Reverse Leakage @ Vr: 600µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 450mV @ 4A Current - Average Rectified (Io): 4A Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||
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RGF1D-E3/5CA |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VSSB410S-E3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.9A DO214AA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1.5µA @ 70V Capacitance @ Vr, F: 230pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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MURS260-E3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO214AA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10DEHE3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GEHE3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GEHE3/93 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10JEHE3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10KEHE3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10MEHE3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10DE-E3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Reverse Recovery Time (trr): 150 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GE-E3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GE-E3/93 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Part Status: Obsolete Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10JE-E3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10KE-E3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10ME-E3/91 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10DEHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10GEHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10JEHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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RGP10KEHE3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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VSB2200S-M3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 2A 200V AXIAL Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 110pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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UF4002-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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UF4003-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
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UF4004-E3/53 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns |
auf Bestellung 5970 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2851 Stücke - Preis und Lieferfrist anzeigen
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| SE30AFB-M3/6A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
Current - Average Rectified (Io): 1.4A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1.4A DO221AC
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
Current - Average Rectified (Io): 1.4A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC
auf Bestellung 4815 Stücke - Preis und Lieferfrist anzeigen
| TVR10G-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 1A 400V DO-204
Part Status: Obsolete
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE 1A 400V DO-204
Part Status: Obsolete
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
| RS07J-M-18 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
| VSSB410S-M3/5BT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
| VS-10BQ060-M3/5BT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 1A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
auf Bestellung 365 Stücke - Preis und Lieferfrist anzeigen
| SB140-E3/53 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 1A 40V DO-41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 1.8 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 1A 40V DO-41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 1.8 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
| MURS160-M3/5BT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| RS07K-M-18 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 500MA DO219AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 800V
Part Status: Active
Diode Type: Standard
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS07
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 800V 500MA DO219AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 800V
Part Status: Active
Diode Type: Standard
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS07
| RS07J-M-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 600V 500MA DO219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
| VSSB420S-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 1.8A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.8A (DC)
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 200V 1.8A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.8A (DC)
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
auf Bestellung 3058 Stücke - Preis und Lieferfrist anzeigen
| VSSB420S-M3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 1.8A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A (DC)
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 200V 1.8A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A (DC)
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 5827 Stücke - Preis und Lieferfrist anzeigen
| SSA33L-M3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 3A 30V DO-214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 3A 30V DO-214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
| V3PAL45-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 3A 45V DO-221BC
Base Part Number: V3PAL45
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 450µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 3A 45V DO-221BC
Base Part Number: V3PAL45
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 450µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 22710 Stücke - Preis und Lieferfrist anzeigen
| V4PAL45-M3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 3A DO221BC
Base Part Number: V4PAL45
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 450µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 4A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 3A DO221BC
Base Part Number: V4PAL45
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 450µA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 4A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 25245 Stücke - Preis und Lieferfrist anzeigen
| MURS160-M3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
auf Bestellung 2960 Stücke - Preis und Lieferfrist anzeigen
| MURS240-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
| MURS260-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
| MURS340S-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 3A DO214AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| MURS240-M3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
| MURS260-M3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| MURS340S-M3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 3A DO214AA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
| VS-15MQ040-M3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 1.5A 40V SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 1.5A 40V SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
| RGP10AHM3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: RGP10
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO204AL
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: RGP10
| RGP10DHM3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
| RGP10GHM3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
| RGP10JHM3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| RGP10MHM3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| RGP10AHM3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: RGP10
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 1A DO204AL
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: RGP10
| RGP10DHM3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
| RGP10GHM3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
| RGP10JHM3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
| RGP10MHM3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 250ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 250ns
| TVR10GHM3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 1A 400V DO-204
Part Status: Obsolete
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE 1A 400V DO-204
Part Status: Obsolete
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
| VS-10BQ100-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
auf Bestellung 33227 Stücke - Preis und Lieferfrist anzeigen
| RGP02-16E-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 500MA DO204AL
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 1.6KV 500MA DO204AL
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
| RGP02-17E-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.7KV 500MA DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1700V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1700V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 1.7KV 500MA DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 1700V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1700V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
| RGP02-18E-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.8KV 500MA DO204AL
Voltage - DC Reverse (Vr) (Max): 1800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1800V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 1.8KV 500MA DO204AL
Voltage - DC Reverse (Vr) (Max): 1800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1800V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
| RGP02-20E-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 2KV 500MA DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
| RMPG06BHE3_A/53 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 100V 150NS MPG06
Base Part Number: RMPG06
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 100V 150NS MPG06
Base Part Number: RMPG06
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
| RMPG06D-E3/100 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 200V 150NS MPG06
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 200V 150NS MPG06
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
| RMPG06DHE3_A/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 200V 150NS MPG06
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 200V 150NS MPG06
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 150ns
| RMPG06G-E3/100 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 400V 150NS MPG06
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RMPG06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 400V 150NS MPG06
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RMPG06
| RMPG06GHE3_A/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 400V 150NS MPG06
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 400V 150NS MPG06
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
| RMPG06J-E3/100 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 600V 200NS MPG06
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 600V 200NS MPG06
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
| RMPG06JHE3_A/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 600V 200NS MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 600V 200NS MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
| VSSA210-E3/5AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
| RGP10D-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
| RGP10DHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Box (TB)
| RGP10G-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
| RGP10GHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Diode Type: Standard
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Diode Type: Standard
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Operating Temperature - Junction: -65°C ~ 175°C
| RGP10J-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
| RGP10JHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
| RGP10K-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
| RGP10M-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
| RGP10MHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
| MURS120-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AA
Diode Type: Standard
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO214AA
Diode Type: Standard
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| MURS120-M3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AA
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO214AA
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
| RGP02-16E-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 500MA DO204AL
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 1.6KV 500MA DO204AL
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
| RGP02-17E-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.7KV 500MA DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 1.7KV 500MA DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
| RGP02-18E-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.8KV 500MA DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 1.8KV 500MA DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
| RGP02-20E-M3/73 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204AL
Current - Average Rectified (Io): 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 2KV 500MA DO204AL
Current - Average Rectified (Io): 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
| SBYV26CHM3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| SBYV26CHM3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
| RMPG06B-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 100V 150NS MPG06
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Base Part Number: RMPG06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 100V 150NS MPG06
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Base Part Number: RMPG06
| RMPG06D-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 200V 150NS MPG06
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 200V 150NS MPG06
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
| RMPG06G-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 400V 150NS MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 400V 150NS MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Tape & Box (TB)
auf Bestellung 2637 Stücke - Preis und Lieferfrist anzeigen
| RMPG06J-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 600V 200NS MPG06
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GPP 1A 600V 200NS MPG06
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
| SSA33L-M3/61T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 3A 30V DO-214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 3A 30V DO-214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
| SB160-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 1A 60V DO-41
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 1A 60V DO-41
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
| UF4005-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Standard
| UF4006-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
| SS210-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 1.5A 100V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 1.5A 100V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
| SSB44-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 4A 40V DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 6400 Stücke Description: DIODE SCHOTTKY 4A 40V DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 12970 Stücke - Preis und Lieferfrist anzeigen
|
| SS210-M3/52T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
| SSB44-M3/52T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 4A 40V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 4A 40V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
| SSB43L-M3/5BT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 4A 30V DO-214AC
Current - Reverse Leakage @ Vr: 600µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 4A 30V DO-214AC
Current - Reverse Leakage @ Vr: 600µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
| SSB43L-M3/52T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 4A 30V DO-214AA
Current - Reverse Leakage @ Vr: 600µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 4A 30V DO-214AA
Current - Reverse Leakage @ Vr: 600µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
| RGF1D-E3/5CA |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| VSSB410S-E3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1.5µA @ 70V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1.5µA @ 70V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
| MURS260-E3/52T |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
| RGP10DEHE3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| RGP10GEHE3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
| RGP10GEHE3/93 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
| RGP10JEHE3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
| RGP10KEHE3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
| RGP10MEHE3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
| RGP10DE-E3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
| RGP10GE-E3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
| RGP10GE-E3/93 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Part Status: Obsolete
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
| RGP10JE-E3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
| RGP10KE-E3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
| RGP10ME-E3/91 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
| RGP10DEHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
| RGP10GEHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
| RGP10JEHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| RGP10KEHE3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
| VSB2200S-M3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 2A 200V AXIAL
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 2A 200V AXIAL
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
| UF4002-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
| UF4003-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
| UF4004-E3/53 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
auf Bestellung 5970 Stücke Description: DIODE GEN PURP 400V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Lieferzeit 21-28 Tag (e)
auf Bestellung 2851 Stücke - Preis und Lieferfrist anzeigen
|
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