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MURS360SHE3_A/H MURS360SHE3_A/H Vishay General Semiconductor - Diodes Division murs340s.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
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MURS360SHE3_A/I MURS360SHE3_A/I Vishay General Semiconductor - Diodes Division murs340s.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Produkt ist nicht verfügbar
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ESH2BHE3_A/H ESH2BHE3_A/H Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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ESH2BHE3_A/I ESH2BHE3_A/I Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2CHE3_A/H ESH2CHE3_A/H Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
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ESH2CHE3_A/I ESH2CHE3_A/I Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2DHE3_A/I ESH2DHE3_A/I Vishay General Semiconductor - Diodes Division esh2b.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS140HE3_A/H MURS140HE3_A/H Vishay General Semiconductor - Diodes Division murs140.pdf Description: DIODE STANDARD 400V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS2AHE3_A/H RS2AHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
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RS2AHE3_A/I RS2AHE3_A/I Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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RS2BHE3_A/H RS2BHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS2BHE3_A/I RS2BHE3_A/I Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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RS2DHE3_A/I RS2DHE3_A/I Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 200V 1.5A DO214AA
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RS2GHE3_A/I RS2GHE3_A/I Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 400V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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RS2JHE3_A/I RS2JHE3_A/I Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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RS2KHE3_A/H RS2KHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 800V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RS2KHE3_A/I RS2KHE3_A/I Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 800V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSB44HE3_A/H SSB44HE3_A/H Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 40V 4A DO214AA
Current - Average Rectified (Io): 4A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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2250+0.33 EUR
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SSB44HE3_A/I SSB44HE3_A/I Vishay General Semiconductor - Diodes Division ssb43l.pdf Description: DIODE SCHOTTKY 40V 4A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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3200+0.25 EUR
6400+0.24 EUR
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MURS120HE3_A/I MURS120HE3_A/I Vishay General Semiconductor - Diodes Division murs120.pdf Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MURS140HE3_A/I MURS140HE3_A/I Vishay General Semiconductor - Diodes Division murs140.pdf Description: DIODE STANDARD 400V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS160HE3_A/H MURS160HE3_A/H Vishay General Semiconductor - Diodes Division murs140.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS22HE3_A/H SS22HE3_A/H Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS22HE3_A/I SS22HE3_A/I Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
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SS23HE3_A/H SS23HE3_A/H Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 30V 2A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SS23HE3_A/I SS23HE3_A/I Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 30V 2A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SS24HE3_A/H SS24HE3_A/H Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
750+0.48 EUR
1500+0.44 EUR
2250+0.42 EUR
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SS26HE3_A/H SS26HE3_A/H Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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2250+0.4 EUR
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SS26HE3_A/I SS26HE3_A/I Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2AHE3_A/H ES2AHE3_A/H Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2AHE3_A/I ES2AHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2BHE3_A/H ES2BHE3_A/H Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2CHE3_A/H ES2CHE3_A/H Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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ES2CHE3_A/I ES2CHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2DHE3_A/H ES2DHE3_A/H Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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ES2DHE3_A/I ES2DHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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ES2FHE3_A/H ES2FHE3_A/H Vishay General Semiconductor - Diodes Division es2f.pdf Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2FHE3_A/I ES2FHE3_A/I Vishay General Semiconductor - Diodes Division es2f.pdf Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2GHE3_A/H ES2GHE3_A/H Vishay General Semiconductor - Diodes Division es2f.pdf Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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2250+0.4 EUR
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7500+0.35 EUR
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S4PKHM3_A/H S4PKHM3_A/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE STANDARD 800V 4A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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S4PKHM3_A/I S4PKHM3_A/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE STANDARD 800V 4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SL23HE3_A/I SL23HE3_A/I Vishay General Semiconductor - Diodes Division sl22.pdf Description: DIODE SCHOTTKY 30V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 395 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS3P5LHM3_A/H SS3P5LHM3_A/H Vishay General Semiconductor - Diodes Division ss3p6l.pdf Description: DIODE SCHOTTKY 50V 3A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS3P5LHM3_A/I SS3P5LHM3_A/I Vishay General Semiconductor - Diodes Division ss3p6l.pdf Description: DIODE SCHOTTKY 50V 3A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS6P4CHM3_A/H SS6P4CHM3_A/H Vishay General Semiconductor - Diodes Division ss6p4c.pdf Description: DIODE ARR SCHOTT 40V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS6P4CHM3_A/I SS6P4CHM3_A/I Vishay General Semiconductor - Diodes Division ss6p4c.pdf Description: DIODE ARR SCHOTT 40V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS5P4HM3_A/H SS5P4HM3_A/H Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 40V 5A TO277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Produkt ist nicht verfügbar
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SS5P4HM3_A/I SS5P4HM3_A/I Vishay General Semiconductor - Diodes Division ss5p4.pdf Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS5P6HM3_A/H SS5P6HM3_A/H Vishay General Semiconductor - Diodes Division ss5p6.pdf Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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1500+0.38 EUR
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SS5P6HM3_A/I SS5P6HM3_A/I Vishay General Semiconductor - Diodes Division ss5p6.pdf Description: DIODE SCHOTTKY 60V 5A TO277A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
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SE40PGHM3_A/H SE40PGHM3_A/H Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE STANDARD 200V 2.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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SE40PGHM3_A/I SE40PGHM3_A/I Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE STANDARD 200V 2.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS8P6CHM3_A/H SS8P6CHM3_A/H Vishay General Semiconductor - Diodes Division ss8p6c.pdf Description: DIODE ARR SCHOTT 50V 4A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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SS5P6HM3J_A/H SS5P6HM3J_A/H Vishay General Semiconductor - Diodes Division ss5p6.pdf Description: DIODE SCHOTTKY 60V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2DHE3J_A/H ES2DHE3J_A/H Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS10P3CLHM3_A/H SS10P3CLHM3_A/H Vishay General Semiconductor - Diodes Division ss10p3cl.pdf Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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SS10P3CLHM3_A/I SS10P3CLHM3_A/I Vishay General Semiconductor - Diodes Division ss10p3cl.pdf Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AS3PKHM3_A/H AS3PKHM3_A/H Vishay General Semiconductor - Diodes Division as3pd.pdf Description: DIODE AVALANCHE 800V 2.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Avalanche
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4500 Stücke
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AS3PKHM3_A/I AS3PKHM3_A/I Vishay General Semiconductor - Diodes Division as3pd.pdf Description: DIODE AVALANCHE 800V 2.1A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6500 Stücke
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AR3PKHM3_A/H AR3PKHM3_A/H Vishay General Semiconductor - Diodes Division ar3pm.pdf Description: DIODE AVALANCHE 800V 1.6A TO277A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Produkt ist nicht verfügbar
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MURS360SHE3_A/H murs340s.pdf
MURS360SHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
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MURS360SHE3_A/I murs340s.pdf
MURS360SHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Produkt ist nicht verfügbar
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ESH2BHE3_A/H esh2b.pdf
ESH2BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2BHE3_A/I esh2b.pdf
ESH2BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESH2CHE3_A/H esh2b.pdf
ESH2CHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar
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ESH2CHE3_A/I esh2b.pdf
ESH2CHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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ESH2DHE3_A/I esh2b.pdf
ESH2DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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MURS140HE3_A/H murs140.pdf
MURS140HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RS2AHE3_A/H rs2a.pdf
RS2AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Produkt ist nicht verfügbar
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RS2AHE3_A/I rs2a.pdf
RS2AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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RS2BHE3_A/H rs2a.pdf
RS2BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RS2BHE3_A/I rs2a.pdf
RS2BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS2DHE3_A/I rs2a.pdf
RS2DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO214AA
Produkt ist nicht verfügbar
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RS2GHE3_A/I rs2a.pdf
RS2GHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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RS2JHE3_A/I rs2a.pdf
RS2JHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS2KHE3_A/H rs2a.pdf
RS2KHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RS2KHE3_A/I rs2a.pdf
RS2KHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSB44HE3_A/H ssb43l.pdf
SSB44HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Current - Average Rectified (Io): 4A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+0.37 EUR
1500+0.35 EUR
2250+0.33 EUR
Mindestbestellmenge: 750 Stücke
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SSB44HE3_A/I ssb43l.pdf
SSB44HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3200+0.25 EUR
6400+0.24 EUR
Mindestbestellmenge: 3200 Stücke
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MURS120HE3_A/I murs120.pdf
MURS120HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MURS140HE3_A/I murs140.pdf
MURS140HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MURS160HE3_A/H murs140.pdf
MURS160HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS22HE3_A/H ss22.pdf
SS22HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS22HE3_A/I ss22.pdf
SS22HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS23HE3_A/H ss22.pdf
SS23HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SS23HE3_A/I ss22.pdf
SS23HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SS24HE3_A/H ss22.pdf
SS24HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2250 Stücke:
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750+0.48 EUR
1500+0.44 EUR
2250+0.42 EUR
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SS26HE3_A/H ss22.pdf
SS26HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
750+0.48 EUR
1500+0.43 EUR
2250+0.4 EUR
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SS26HE3_A/I ss22.pdf
SS26HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2AHE3_A/H es2.pdf
ES2AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2AHE3_A/I es2.pdf
ES2AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 2A DO214AA
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2BHE3_A/H es2.pdf
ES2BHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2CHE3_A/H es2.pdf
ES2CHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2CHE3_A/I es2.pdf
ES2CHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2DHE3_A/H es2.pdf
ES2DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPrivatkunde
750+0.52 EUR
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ES2DHE3_A/I es2.pdf
ES2DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPrivatkunde
3200+0.43 EUR
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ES2FHE3_A/H es2f.pdf
ES2FHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2FHE3_A/I es2f.pdf
ES2FHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ES2GHE3_A/H es2f.pdf
ES2GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
750+0.48 EUR
1500+0.43 EUR
2250+0.4 EUR
3750+0.38 EUR
5250+0.37 EUR
7500+0.35 EUR
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S4PKHM3_A/H s4pm.pdf
S4PKHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 4A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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S4PKHM3_A/I s4pm.pdf
S4PKHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SL23HE3_A/I sl22.pdf
SL23HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 395 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS3P5LHM3_A/H ss3p6l.pdf
SS3P5LHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS3P5LHM3_A/I ss3p6l.pdf
SS3P5LHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A TO277A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS6P4CHM3_A/H ss6p4c.pdf
SS6P4CHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS6P4CHM3_A/I ss6p4c.pdf
SS6P4CHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS5P4HM3_A/H ss5p4.pdf
SS5P4HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Produkt ist nicht verfügbar
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SS5P4HM3_A/I ss5p4.pdf
SS5P4HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS5P6HM3_A/H ss5p6.pdf
SS5P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.38 EUR
3000+0.37 EUR
Mindestbestellmenge: 1500 Stücke
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SS5P6HM3_A/I ss5p6.pdf
SS5P6HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6500+0.39 EUR
13000+0.37 EUR
32500+0.36 EUR
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SE40PGHM3_A/H se40pb.pdf
SE40PGHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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SE40PGHM3_A/I se40pb.pdf
SE40PGHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6500 Stücke
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SS8P6CHM3_A/H ss8p6c.pdf
SS8P6CHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 50V 4A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.54 EUR
Mindestbestellmenge: 1500 Stücke
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SS5P6HM3J_A/H ss5p6.pdf
SS5P6HM3J_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ES2DHE3J_A/H es2.pdf
ES2DHE3J_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS10P3CLHM3_A/H ss10p3cl.pdf
SS10P3CLHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS10P3CLHM3_A/I ss10p3cl.pdf
SS10P3CLHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AS3PKHM3_A/H as3pd.pdf
AS3PKHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Avalanche
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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AS3PKHM3_A/I as3pd.pdf
AS3PKHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.1A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6500 Stücke
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AR3PKHM3_A/H ar3pm.pdf
AR3PKHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.6A TO277A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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