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BAQ335-TR BAQ335-TR Vishay General Semiconductor - Diodes Division baq333.pdf Description: DIODE GP 125V 200MA MICROMELF
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BAQ335-TR BAQ335-TR Vishay General Semiconductor - Diodes Division baq333.pdf Description: DIODE GP 125V 200MA MICROMELF
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MSS1P4HM3_A/H MSS1P4HM3_A/H Vishay General Semiconductor - Diodes Division mss1p4.pdf Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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MSS1P4HM3_A/H MSS1P4HM3_A/H Vishay General Semiconductor - Diodes Division mss1p4.pdf Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
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MSS1P5HM3_A/H MSS1P5HM3_A/H Vishay General Semiconductor - Diodes Division mss1p6.pdf Description: DIODE SCHOTTKY 50V 1A MICROSMP
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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MSS1P5HM3_A/H MSS1P5HM3_A/H Vishay General Semiconductor - Diodes Division mss1p6.pdf Description: DIODE SCHOTTKY 50V 1A MICROSMP
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Grade: Automotive
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MSS1P6HM3_A/H MSS1P6HM3_A/H Vishay General Semiconductor - Diodes Division mss1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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MSS1P6HM3_A/H MSS1P6HM3_A/H Vishay General Semiconductor - Diodes Division mss1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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MSS1P2LHM3_A/H MSS1P2LHM3_A/H Vishay General Semiconductor - Diodes Division mss1p3l.pdf Description: DIODE SCHOTTKY 20V 1A MICROSMP
Produkt ist nicht verfügbar
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MSS1P6HM3J_A/H MSS1P6HM3J_A/H Vishay General Semiconductor - Diodes Division mss1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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SMAJ7.0AHE3_A/I SMAJ7.0AHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ7.0AHM3_A/H SMAJ7.0AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
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SMAJ7.0AHM3_A/I SMAJ7.0AHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ7.5CAHE3_A/I SMAJ7.5CAHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7.5VWM 12.9V DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 31A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ7.5CAHM3_A/H SMAJ7.5CAHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7.5VWM 12.9V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V3P6-M3/84A V3P6-M3/84A Vishay General Semiconductor - Diodes Division v3p6.pdf Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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V3P6-M3/84A V3P6-M3/84A Vishay General Semiconductor - Diodes Division v3p6.pdf Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
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SS3P6-M3/85A SS3P6-M3/85A Vishay General Semiconductor - Diodes Division ss3p5.pdf Description: DIODE SCHOTTKY 60V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS3P6-M3/85A SS3P6-M3/85A Vishay General Semiconductor - Diodes Division ss3p5.pdf Description: DIODE SCHOTTKY 60V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
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BYM12-100-E3/96 BYM12-100-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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BYM12-100-E3/96 BYM12-100-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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BYM11-400-E3/96 BYM11-400-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BYM11-400-E3/96 BYM11-400-E3/96 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BYM11-400-E3/97 BYM11-400-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BYM11-400-E3/97 BYM11-400-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZM55C16-TR BZM55C16-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 16V 500MW MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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BZM55C16-TR BZM55C16-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 16V 500MW MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
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SM8S16A-71HE4_A/J SM8S16A-71HE4_A/J Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 16VWM 26VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 254A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYG23MHM3_A/I BYG23MHM3_A/I Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPSMB18AHM3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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TPSMB18AHM3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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TPSMB18A-1BHE3_A/I TPSMB18A-1BHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 600W SMB DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPSMB18A-1BHE3/5BT TPSMB18A-1BHE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Produkt ist nicht verfügbar
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P6KE300-E3/54 P6KE300-E3/54 Vishay General Semiconductor - Diodes Division P6KE6.8A_-_540A.pdf Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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P6KE300C-E3/54 P6KE300C-E3/54 Vishay General Semiconductor - Diodes Division P6KE6.8A_-_540A.pdf Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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V8PA10-M3/I V8PA10-M3/I Vishay General Semiconductor - Diodes Division v8pa10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Packaging: Tape & Reel (TR)
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V8PA10-M3/I V8PA10-M3/I Vishay General Semiconductor - Diodes Division v8pa10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Packaging: Cut Tape (CT)
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MSQ1PJHM3/H MSQ1PJHM3/H Vishay General Semiconductor - Diodes Division msq1pg-pj.pdf Description: DIODE STANDARD 600V 1A DO219AD
Produkt ist nicht verfügbar
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MSQ1PJHM3/H MSQ1PJHM3/H Vishay General Semiconductor - Diodes Division msq1pg-pj.pdf Description: DIODE STANDARD 600V 1A DO219AD
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VS-20TQ045S-M3 VS-20TQ045S-M3 Vishay General Semiconductor - Diodes Division vs-20tq035s-m3.pdf Description: DIODE SCHOTTKY 45V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
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BZM55C9V1-TR BZM55C9V1-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
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BZM55C9V1-TR BZM55C9V1-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
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BZT52B22-E3-08 BZT52B22-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 22V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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BZT52B22-E3-08 BZT52B22-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 22V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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TPSMB16AHE3_A/H TPSMB16AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 13.6VWM 22.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBZ4624-E3-08 MMBZ4624-E3-08 Vishay General Semiconductor - Diodes Division mmbz4617.pdf Description: DIODE ZENER 4.7V 350MW SOT23-3
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MMBZ4624-E3-08 MMBZ4624-E3-08 Vishay General Semiconductor - Diodes Division mmbz4617.pdf Description: DIODE ZENER 4.7V 350MW SOT23-3
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GSD2004S-HE3-08 GSD2004S-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
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GSD2004S-HE3-08 GSD2004S-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
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MMSZ5247C-HE3-08 MMSZ5247C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 17V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5247C-HE3-08 MMSZ5247C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 17V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS10PH10HM3_A/H SS10PH10HM3_A/H Vishay General Semiconductor - Diodes Division ss10ph10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS10PH10HM3_A/H SS10PH10HM3_A/H Vishay General Semiconductor - Diodes Division ss10ph10.pdf Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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BZX384C43-E3-08 BZX384C43-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 43V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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BZX384C43-E3-08 BZX384C43-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 43V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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BZM55B24-TR BZM55B24-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 24V 500MW MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 220 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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5000+0.096 EUR
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BZM55B24-TR BZM55B24-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 24V 500MW MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 220 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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50+0.43 EUR
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SMAJ100AHE3_A/H SMAJ100AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 100VWM 162VC DO214AC
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SMAJ100AHE3_A/I SMAJ100AHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 100VWM 162VC DO214AC
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VS-50WQ04FN-M3 VS-50WQ04FN-M3 Vishay General Semiconductor - Diodes Division vs-50wq04fn.pdf Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 5.5A
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 507 Stücke:
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BAQ335-TR baq333.pdf
BAQ335-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 125V 200MA MICROMELF
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BAQ335-TR baq333.pdf
BAQ335-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 125V 200MA MICROMELF
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MSS1P4HM3_A/H mss1p4.pdf
MSS1P4HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
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MSS1P4HM3_A/H mss1p4.pdf
MSS1P4HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
auf Bestellung 30435 Stücke:
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46+0.46 EUR
68+0.31 EUR
101+0.2 EUR
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MSS1P5HM3_A/H mss1p6.pdf
MSS1P5HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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MSS1P5HM3_A/H mss1p6.pdf
MSS1P5HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 12891 Stücke:
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29+0.74 EUR
41+0.51 EUR
100+0.26 EUR
500+0.21 EUR
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MSS1P6HM3_A/H mss1p6.pdf
MSS1P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
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4500+0.089 EUR
9000+0.08 EUR
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MSS1P6HM3_A/H mss1p6.pdf
MSS1P6HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 24525 Stücke:
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50+0.42 EUR
76+0.27 EUR
100+0.23 EUR
500+0.17 EUR
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2000+0.12 EUR
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MSS1P2LHM3_A/H mss1p3l.pdf
MSS1P2LHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A MICROSMP
Produkt ist nicht verfügbar
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MSS1P6HM3J_A/H mss1p6.pdf
MSS1P6HM3J_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ7.0AHE3_A/I smaj50a.pdf
SMAJ7.0AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ7.0AHM3_A/H smaj50a.pdf
SMAJ7.0AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Produkt ist nicht verfügbar
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SMAJ7.0AHM3_A/I smaj50a.pdf
SMAJ7.0AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ7.5CAHE3_A/I smaj50a.pdf
SMAJ7.5CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AC
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 31A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ7.5CAHM3_A/H smaj50a.pdf
SMAJ7.5CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V3P6-M3/84A v3p6.pdf
V3P6-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.2 EUR
6000+0.19 EUR
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V3P6-M3/84A v3p6.pdf
V3P6-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 10456 Stücke:
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25+0.83 EUR
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100+0.4 EUR
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SS3P6-M3/85A ss3p5.pdf
SS3P6-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SS3P6-M3/85A ss3p5.pdf
SS3P6-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 3970 Stücke:
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36+0.58 EUR
54+0.39 EUR
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500+0.23 EUR
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2000+0.18 EUR
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BYM12-100-E3/96 egl41.pdf
BYM12-100-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 37500 Stücke:
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1500+0.2 EUR
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BYM12-100-E3/96 egl41.pdf
BYM12-100-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 39690 Stücke:
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39+0.55 EUR
61+0.35 EUR
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BYM11-400-E3/96 bym1150.pdf
BYM11-400-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1500 Stücke:
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1500+0.24 EUR
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BYM11-400-E3/96 bym1150.pdf
BYM11-400-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2730 Stücke:
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27+0.8 EUR
40+0.54 EUR
100+0.36 EUR
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BYM11-400-E3/97 bym1150.pdf
BYM11-400-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BYM11-400-E3/97 bym1150.pdf
BYM11-400-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 911 Stücke:
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25+0.83 EUR
37+0.57 EUR
100+0.38 EUR
500+0.3 EUR
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BZM55C16-TR bzm55.pdf
BZM55C16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 27480 Stücke:
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2500+0.094 EUR
5000+0.083 EUR
7500+0.079 EUR
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17500+0.062 EUR
25000+0.061 EUR
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BZM55C16-TR bzm55.pdf
BZM55C16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW MICROMELF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 170 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 28539 Stücke:
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AnzahlPrivatkunde
67+0.31 EUR
102+0.2 EUR
196+0.11 EUR
500+0.1 EUR
1000+0.095 EUR
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SM8S16A-71HE4_A/J sm8s.pdf
SM8S16A-71HE4_A/J
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 254A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYG23MHM3_A/I byg23m.pdf
BYG23MHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPSMB18AHM3_A/H tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPSMB18AHM3_A/I tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Applications: Telecom
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPSMB18A-1BHE3_A/I tpsmb.pdf
TPSMB18A-1BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600W SMB DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPSMB18A-1BHE3/5BT tpsmb.pdf
TPSMB18A-1BHE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AA
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 23.8A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Produkt ist nicht verfügbar
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P6KE300-E3/54 P6KE6.8A_-_540A.pdf
P6KE300-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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P6KE300C-E3/54 P6KE6.8A_-_540A.pdf
P6KE300C-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 243VWM 430VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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V8PA10-M3/I v8pa10.pdf
V8PA10-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 14000 Stücke:
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14000+0.36 EUR
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V8PA10-M3/I v8pa10.pdf
V8PA10-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A DO221BC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 22581 Stücke:
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12+1.78 EUR
19+1.11 EUR
50+0.81 EUR
100+0.71 EUR
500+0.55 EUR
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MSQ1PJHM3/H msq1pg-pj.pdf
MSQ1PJHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO219AD
Produkt ist nicht verfügbar
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MSQ1PJHM3/H msq1pg-pj.pdf
MSQ1PJHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO219AD
auf Bestellung 2124 Stücke:
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AnzahlPrivatkunde
31+0.69 EUR
49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.15 EUR
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VS-20TQ045S-M3 vs-20tq035s-m3.pdf
VS-20TQ045S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.7 mA @ 45 V
auf Bestellung 6340 Stücke:
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7+3.33 EUR
50+1.62 EUR
100+1.45 EUR
500+1.15 EUR
1000+1.06 EUR
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BZM55C9V1-TR bzm55.pdf
BZM55C9V1-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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2500+0.13 EUR
7500+0.11 EUR
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BZM55C9V1-TR bzm55.pdf
BZM55C9V1-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
auf Bestellung 9783 Stücke:
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34+0.63 EUR
55+0.38 EUR
77+0.27 EUR
100+0.24 EUR
500+0.18 EUR
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BZT52B22-E3-08 bzt52.pdf
BZT52B22-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.093 EUR
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BZT52B22-E3-08 bzt52.pdf
BZT52B22-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
auf Bestellung 3722 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
87+0.24 EUR
179+0.12 EUR
500+0.11 EUR
1000+0.098 EUR
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TPSMB16AHE3_A/H tpsmb.pdf
TPSMB16AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBZ4624-E3-08 mmbz4617.pdf
MMBZ4624-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
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MMBZ4624-E3-08 mmbz4617.pdf
MMBZ4624-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
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GSD2004S-HE3-08
GSD2004S-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.094 EUR
6000+0.088 EUR
9000+0.073 EUR
30000+0.071 EUR
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GSD2004S-HE3-08
GSD2004S-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Qualification: AEC-Q101
auf Bestellung 34223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
55+0.38 EUR
112+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
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MMSZ5247C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5247C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5247C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5247C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS10PH10HM3_A/H ss10ph10.pdf
SS10PH10HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.82 EUR
3000+0.76 EUR
4500+0.73 EUR
7500+0.69 EUR
10500+0.67 EUR
Mindestbestellmenge: 1500 Stücke
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SS10PH10HM3_A/H ss10ph10.pdf
SS10PH10HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13923 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.83 EUR
100+1.21 EUR
500+0.95 EUR
Mindestbestellmenge: 8 Stücke
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BZX384C43-E3-08 PdfFile_148489.pdf
BZX384C43-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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BZX384C43-E3-08 PdfFile_148489.pdf
BZX384C43-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
auf Bestellung 6437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
67+0.31 EUR
100+0.27 EUR
500+0.2 EUR
Mindestbestellmenge: 30 Stücke
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BZM55B24-TR bzm55.pdf
BZM55B24-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 220 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.1 EUR
5000+0.096 EUR
Mindestbestellmenge: 2500 Stücke
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BZM55B24-TR bzm55.pdf
BZM55B24-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 220 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
50+0.43 EUR
102+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 34 Stücke
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SMAJ100AHE3_A/H smaj50a.pdf
SMAJ100AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7200 Stücke
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SMAJ100AHE3_A/I smaj50a.pdf
SMAJ100AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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VS-50WQ04FN-M3 vs-50wq04fn.pdf
VS-50WQ04FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-252AA (DPAK)
Current - Average Rectified (Io): 5.5A
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 507 Stücke:
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AnzahlPrivatkunde
14+1.51 EUR
75+0.62 EUR
150+0.6 EUR
Mindestbestellmenge: 14 Stücke
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