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MPG06B-E3/54 MPG06B-E3/54 Vishay General Semiconductor - Diodes Division MPG06%28A-M%29.pdf Description: DIODE STANDARD 100V 1A MPG06
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
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MPG06J-E3/100 MPG06J-E3/100 Vishay General Semiconductor - Diodes Division MPG06%28A-M%29.pdf Description: DIODE STANDARD 600V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
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RMPG06D-E3/53 RMPG06D-E3/53 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 200V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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TMPG06-43AHE3_A/C TMPG06-43AHE3_A/C Vishay General Semiconductor - Diodes Division tmpg06.pdf Description: TVS DIODE 36.8VWM 59.3VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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TMPG06-36HE3/54 TMPG06-36HE3/54 Vishay General Semiconductor - Diodes Division TMPG06-10_-_TMPG06-43A.pdf Description: TVS DIODE 29.1VWM 52VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 29.1V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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TMPG06-22HE3/54 TMPG06-22HE3/54 Vishay General Semiconductor - Diodes Division TMPG06-10_-_TMPG06-43A.pdf Description: TVS DIODE 17.8VWM 31.9VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.5A
Voltage - Reverse Standoff (Typ): 17.8V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.8V
Voltage - Clamping (Max) @ Ipp: 31.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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TMPG06-20AHE3_A/C TMPG06-20AHE3_A/C Vishay General Semiconductor - Diodes Division tmpg06.pdf Description: TVS DIODE 17VWM 27.7VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ28AHE3_A/H SMAJ28AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ18AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-63CPT100 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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SMBJ28AHM3_B/H SMBJ28AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AS4PJHM3_A/H AS4PJHM3_A/H Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS4PJHM3_A/H AS4PJHM3_A/H Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE40PJHM3_A/I SE40PJHM3_A/I Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE40PJHM3_A/I SE40PJHM3_A/I Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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V8PA22-M3/H V8PA22-M3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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V8PA22-M3/H V8PA22-M3/H Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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V8PA22HM3/I V8PA22HM3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22HM3/I V8PA22HM3/I Vishay General Semiconductor - Diodes Division v8pa22.pdf Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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V5NM63HM3/I V5NM63HM3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
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V5NM63HM3/I V5NM63HM3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
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V5NL63HM3/I V5NL63HM3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
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V5NL63HM3/I V5NL63HM3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
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V5NL63-M3/I V5NL63-M3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: DIODE SCHOTTKY 60V 2.4A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
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V5NL63-M3/I V5NL63-M3/I Vishay General Semiconductor - Diodes Division v5nl63.pdf Description: DIODE SCHOTTKY 60V 2.4A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
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500+0.43 EUR
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V5NM63-M3/I V5NM63-M3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
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V5NM63-M3/I V5NM63-M3/I Vishay General Semiconductor - Diodes Division v5nm63.pdf Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
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RGF1G-1HE3/67A Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GF1G-9HE3_A/H GF1G-9HE3_A/H Vishay General Semiconductor - Diodes Division GF1x.pdf Description: DIODE STANDARD 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GF1G-9HE3_A/I GF1G-9HE3_A/I Vishay General Semiconductor - Diodes Division GF1x.pdf Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RGF1G-1HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SMC3K54CAHM3_A/H SMC3K54CAHM3_A/H Vishay General Semiconductor - Diodes Division smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 54V
Current - Peak Pulse (10/1000µs): 34.4A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SMC3K54CAHM3_A/H SMC3K54CAHM3_A/H Vishay General Semiconductor - Diodes Division smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 54V
Current - Peak Pulse (10/1000µs): 34.4A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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SS2PH5HM3/84A SS2PH5HM3/84A Vishay General Semiconductor - Diodes Division ss2ph5.pdf Description: DIODE SCHOTTKY 50V 2A DO220AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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SS2PH5HM3/84A SS2PH5HM3/84A Vishay General Semiconductor - Diodes Division ss2ph5.pdf Description: DIODE SCHOTTKY 50V 2A DO220AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
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BZT52C3V0-HE3_A-18 BZT52C3V0-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 3V 410MW SOD123
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZT52C3V0-HE3_A-08 BZT52C3V0-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 3V 410MW SOD123
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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VS-10ETS08S-M3 VS-10ETS08S-M3 Vishay General Semiconductor - Diodes Division vs-10ets08s.pdf Description: DIODE GEN PURP 800V 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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VB30100C-E3/8W VB30100C-E3/8W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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VB30100C-E3/8W VB30100C-E3/8W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
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5+4.32 EUR
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VS-16TTS08S-M3 VS-16TTS08S-M3 Vishay General Semiconductor - Diodes Division vs-16tts08s-m3.pdf Description: SCR 800V 16A TO-263AB (D2PAK)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Part Status: Active
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500+1.58 EUR
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VS-MBRB20100CTR-M3 VS-MBRB20100CTR-M3 Vishay General Semiconductor - Diodes Division vs-mbrb20ct-m3.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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MB10H100CTHE3_B/I MB10H100CTHE3_B/I Vishay General Semiconductor - Diodes Division aztronic Description: DIODE ARR SCHOTT 100V 5A TO263AB
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB
Current - Average Rectified (Io) (per Diode): 5A
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MBR10H100CT-E3/4W MBR10H100CT-E3/4W Vishay General Semiconductor - Diodes Division mbr10hxxct.pdf Description: DIODE ARR SCHOTT 100V 5A TO2203
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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M10H100CTHE3_A/P M10H100CTHE3_A/P Vishay General Semiconductor - Diodes Division mbr10hxxct.pdf Description: DIODE ARR SCHOTT 100V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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T6N36AHM3/I T6N36AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: LOW-PROFILE VERSION 600 W UNI-DI
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DFN3820A
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Packaging: Tape & Reel (TR)
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T6N36AHM3/I T6N36AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: LOW-PROFILE VERSION 600 W UNI-DI
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN3820A
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
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MSMP11A-M3/89A MSMP11A-M3/89A Vishay General Semiconductor - Diodes Division msmp6a.pdf Description: TVS DIODE 11VWM 18.2VC DO219AD
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 8.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
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MSMP11A-M3/89A MSMP11A-M3/89A Vishay General Semiconductor - Diodes Division msmp6a.pdf Description: TVS DIODE 11VWM 18.2VC DO219AD
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 8.2A
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SMC5K51A-M3/I SMC5K51A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Current - Peak Pulse (10/1000µs): 60.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 51V
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SMC5K51A-M3/I SMC5K51A-M3/I Vishay General Semiconductor - Diodes Division smc5k10a.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 60.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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1000+0.75 EUR
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1.5KE68AHE3_B/C 1.5KE68AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 58.1VWM 92VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N6300AHE3_B/C 1N6300AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 136VWM 219VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BYWB29-100HE3_A/P BYWB29-100HE3_A/P Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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BYWB29-100HE3_A/I BYWB29-100HE3_A/I Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1.5KE8.2CAHE3_B/C 1.5KE8.2CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 7VWM 12.1VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 130A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE82CAHE3_B/C 1.5KE82CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 70.1VWM 113VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MB30H100CTHE3_B/P MB30H100CTHE3_B/P Vishay General Semiconductor - Diodes Division mb30hxxct.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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MB30H100CTHE3_B/I MB30H100CTHE3_B/I Vishay General Semiconductor - Diodes Division mb30hxxct.pdf Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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SMBJ5.0AHM3_B/H SMBJ5.0AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MPG06B-E3/54 MPG06%28A-M%29.pdf
MPG06B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A MPG06
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
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MPG06J-E3/100 MPG06%28A-M%29.pdf
MPG06J-E3/100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A MPG06
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MPG06
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 600 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Packaging: Cut Tape (CT)
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RMPG06D-E3/53 rmpg06.pdf
RMPG06D-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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25+0.84 EUR
100+0.55 EUR
500+0.42 EUR
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TMPG06-43AHE3_A/C tmpg06.pdf
TMPG06-43AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36.8VWM 59.3VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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TMPG06-36HE3/54 TMPG06-10_-_TMPG06-43A.pdf
TMPG06-36HE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 29.1VWM 52VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 29.1V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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TMPG06-22HE3/54 TMPG06-10_-_TMPG06-43A.pdf
TMPG06-22HE3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.8VWM 31.9VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.5A
Voltage - Reverse Standoff (Typ): 17.8V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19.8V
Voltage - Clamping (Max) @ Ipp: 31.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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TMPG06-20AHE3_A/C tmpg06.pdf
TMPG06-20AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.7VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ28AHE3_A/H smaj50a.pdf
SMAJ28AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ18AHM3_A/H smaj50a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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VS-63CPT100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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SMBJ28AHM3_B/H smbj.pdf
SMBJ28AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AS4PJHM3_A/H as4pd.pdf
AS4PJHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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AS4PJHM3_A/H as4pd.pdf
AS4PJHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE40PJHM3_A/I se40pb.pdf
SE40PJHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE40PJHM3_A/I se40pb.pdf
SE40PJHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
18+1.21 EUR
100+0.9 EUR
500+0.71 EUR
1000+0.55 EUR
2000+0.5 EUR
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V8PA22-M3/H v8pa22.pdf
V8PA22-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22-M3/H v8pa22.pdf
V8PA22-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
19+1.11 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.62 EUR
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V8PA22HM3/I v8pa22.pdf
V8PA22HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA22HM3/I v8pa22.pdf
V8PA22HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 8219 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.62 EUR
5000+0.56 EUR
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V5NM63HM3/I v5nm63.pdf
V5NM63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
auf Bestellung 14000 Stücke:
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14000+0.35 EUR
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V5NM63HM3/I v5nm63.pdf
V5NM63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
24+0.89 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.4 EUR
2000+0.37 EUR
5000+0.35 EUR
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V5NL63HM3/I v5nl63.pdf
V5NL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
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14000+0.35 EUR
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V5NL63HM3/I v5nl63.pdf
V5NL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
24+0.89 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.4 EUR
2000+0.37 EUR
5000+0.35 EUR
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V5NL63-M3/I v5nl63.pdf
V5NL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
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V5NL63-M3/I v5nl63.pdf
V5NL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 840pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 12845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
34+0.63 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.33 EUR
5000+0.31 EUR
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V5NM63-M3/I v5nm63.pdf
V5NM63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14000+0.31 EUR
Mindestbestellmenge: 14000 Stücke
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V5NM63-M3/I v5nm63.pdf
V5NM63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 5A, 60V, DFN3820A TRENCH SKY REC
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
27+0.8 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.36 EUR
2000+0.33 EUR
5000+0.31 EUR
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RGF1G-1HE3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GF1G-9HE3_A/H GF1x.pdf
GF1G-9HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GF1G-9HE3_A/I GF1x.pdf
GF1G-9HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RGF1G-1HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SMC3K54CAHM3_A/H smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf
SMC3K54CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 54V
Current - Peak Pulse (10/1000µs): 34.4A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 850 Stücke:
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850+0.92 EUR
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SMC3K54CAHM3_A/H smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf
SMC3K54CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 54V
Current - Peak Pulse (10/1000µs): 34.4A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 1605 Stücke:
Lieferzeit 10-14 Tag (e)
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9+2.56 EUR
11+1.95 EUR
100+1.37 EUR
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SS2PH5HM3/84A ss2ph5.pdf
SS2PH5HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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SS2PH5HM3/84A ss2ph5.pdf
SS2PH5HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 17770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
35+0.61 EUR
100+0.3 EUR
500+0.27 EUR
1000+0.21 EUR
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BZT52C3V0-HE3_A-18 bzt52_series.pdf
BZT52C3V0-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 410MW SOD123
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZT52C3V0-HE3_A-08 bzt52_series.pdf
BZT52C3V0-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 410MW SOD123
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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VS-10ETS08S-M3 vs-10ets08s.pdf
VS-10ETS08S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 6817 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.87 EUR
50+1.51 EUR
100+1.37 EUR
500+1.21 EUR
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VB30100C-E3/8W v30100c.pdf
VB30100C-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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1600+1.59 EUR
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VB30100C-E3/8W v30100c.pdf
VB30100C-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 15A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
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VS-16TTS08S-M3 vs-16tts08s-m3.pdf
VS-16TTS08S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO-263AB (D2PAK)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 16 A
Part Status: Active
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VS-MBRB20100CTR-M3 vs-mbrb20ct-m3.pdf
VS-MBRB20100CTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3775 Stücke:
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MB10H100CTHE3_B/I aztronic
MB10H100CTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AB
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB
Current - Average Rectified (Io) (per Diode): 5A
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MBR10H100CT-E3/4W mbr10hxxct.pdf
MBR10H100CT-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO2203
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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M10H100CTHE3_A/P mbr10hxxct.pdf
M10H100CTHE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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T6N36AHM3/I t6n12athrut6n51a.pdf
T6N36AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW-PROFILE VERSION 600 W UNI-DI
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: DFN3820A
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Packaging: Tape & Reel (TR)
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T6N36AHM3/I t6n12athrut6n51a.pdf
T6N36AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW-PROFILE VERSION 600 W UNI-DI
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN3820A
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
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30+0.7 EUR
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MSMP11A-M3/89A msmp6a.pdf
MSMP11A-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO219AD
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 8.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
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MSMP11A-M3/89A msmp6a.pdf
MSMP11A-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO219AD
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 8.2A
auf Bestellung 18686 Stücke:
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63+0.33 EUR
90+0.24 EUR
237+0.088 EUR
500+0.084 EUR
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SMC5K51A-M3/I smc5k10a.pdf
SMC5K51A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Current - Peak Pulse (10/1000µs): 60.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 51V
Produkt ist nicht verfügbar
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SMC5K51A-M3/I smc5k10a.pdf
SMC5K51A-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 51VWM 82.4VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 60.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 3229 Stücke:
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9+2.56 EUR
16+1.37 EUR
100+0.95 EUR
500+0.81 EUR
1000+0.75 EUR
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1.5KE68AHE3_B/C 15ke.pdf
1.5KE68AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58.1VWM 92VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N6300AHE3_B/C 15ke.pdf
1N6300AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 136VWM 219VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYWB29-100HE3_A/P byw29200.pdf
BYWB29-100HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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BYWB29-100HE3_A/I byw29200.pdf
BYWB29-100HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1.5KE8.2CAHE3_B/C 15ke.pdf
1.5KE8.2CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12.1VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 130A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE82CAHE3_B/C 15ke.pdf
1.5KE82CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.9A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MB30H100CTHE3_B/P mb30hxxct.pdf
MB30H100CTHE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MB30H100CTHE3_B/I mb30hxxct.pdf
MB30H100CTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ5.0AHM3_B/H smbj.pdf
SMBJ5.0AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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