Die Produkte vishay general semiconductor - diodes division

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SS3P6HM3/84A SS3P6HM3/84A ss3p5.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO220AA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2739 Stücke - Preis und Lieferfrist anzeigen
GP15K-E3/54 GP15K-E3/54 gp15a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
SE20AFBHM3/6A SE20AFBHM3/6A se20afb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13564 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1753 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13564 Stücke - Preis und Lieferfrist anzeigen
SE20AFJHM3/6A SE20AFJHM3/6A se20afb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 5342 Stücke
Lieferzeit 21-28 Tag (e)
VSSA310S-E3/5AT VSSA310S-E3/5AT vssa310s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2236 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2236 Stücke - Preis und Lieferfrist anzeigen
SS2PH10HM3/84A SS2PH10HM3/84A SS2PH9_PH10_Dec23_2014.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE30AFGHM3/6A SE30AFGHM3/6A se30afb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO221AC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE30
auf Bestellung 1193 Stücke
Lieferzeit 21-28 Tag (e)
SE30AFJHM3/6A SE30AFJHM3/6A se30afb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO221AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE30
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
auf Bestellung 1311 Stücke
Lieferzeit 21-28 Tag (e)
VSSB410S-E3/52T VSSB410S-E3/52T packaging.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 250µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Current - Average Rectified (Io): 1.9A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13524 Stücke - Preis und Lieferfrist anzeigen
BYV38-TR BYV38-TR byv37.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.69 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 14500 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.72 EUR
18+ 1.51 EUR
100+ 1.16 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
2000+ 0.69 EUR
VS-4EGU06-M3/5BT VS-4EGU06-M3/5BT vs-4egu06-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO214AA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Base Part Number: 4EGU06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Base Part Number: 4EGU06
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 248 Stücke
Lieferzeit 21-28 Tag (e)
VSSA210HM3/61T VSSA210HM3/61T vssa210.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-4ECH06-M3/9AT VS-4ECH06-M3/9AT vs-4ech06-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 17500 Stücke
Lieferzeit 21-28 Tag (e)
3500+ 0.8 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 19694 Stücke
Lieferzeit 21-28 Tag (e)
13+ 2 EUR
15+ 1.77 EUR
100+ 1.36 EUR
500+ 1.07 EUR
1000+ 0.86 EUR
SS36HE3_A/H SS36HE3_A/H ss32.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
MURS340HE3_A/H MURS340HE3_A/H murs340.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7019 Stücke - Preis und Lieferfrist anzeigen
P600A-E3/54 P600A-E3/54 p600a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 6A P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Base Part Number: P600
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1082 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3202 Stücke - Preis und Lieferfrist anzeigen
VS-MURD620CTTR-M3 VS-MURD620CTTR-M3 vs-murd620c.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 498 Stücke - Preis und Lieferfrist anzeigen
VS-5ECH06-M3/9AT VS-5ECH06-M3/9AT vs-5ech06-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 23 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
auf Bestellung 12908 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10500 Stücke - Preis und Lieferfrist anzeigen
11+ 2.37 EUR
13+ 2.13 EUR
100+ 1.66 EUR
500+ 1.37 EUR
1000+ 1.08 EUR
SL44HE3_A/H SL44HE3_A/H sl42.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 8A DO214AB
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV20WS-HG3-18 bav19wsg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VSB1545-M3/54 VSB1545-M3/54 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 15A P600
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: B1545
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15AWL06FNTR-M3 VS-15AWL06FNTR-M3 vs-15ewl06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A DPAK
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Base Part Number: 15AWL06
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19744 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A DPAK
Base Part Number: 15AWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2340 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19744 Stücke - Preis und Lieferfrist anzeigen
V10PL45-M3/86A V10PL45-M3/86A v10pl45-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 6A TO277A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2847 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 6A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 1377 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2847 Stücke - Preis und Lieferfrist anzeigen
9+ 3.17 EUR
10+ 2.85 EUR
100+ 2.22 EUR
500+ 1.83 EUR
VS-4EWH02FN-M3 VS-4EWH02FN-M3 vs-4ewh02fn.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 4A DPAK
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MURD620CT-M3 VS-MURD620CT-M3 vs-murd620c.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-6EWH06FN-M3 VS-6EWH06FN-M3 vs-6ewh06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A TO252AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 27 ns
auf Bestellung 26 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.31 EUR
13+ 2.03 EUR
VS-10WQ045FN-M3 VS-10WQ045FN-M3 vs-10wq045f.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 10A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 760pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
auf Bestellung 2945 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.6 EUR
12+ 2.32 EUR
100+ 1.81 EUR
500+ 1.49 EUR
1000+ 1.18 EUR
VS-8EWL06FN-M3 VS-8EWL06FN-M3 vs-8ewl06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO252AA
Base Part Number: 8EWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 170ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1151 Stücke
Lieferzeit 21-28 Tag (e)
VBT1045C-E3/4W VBT1045C-E3/4W vbt1045c.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15AWL06FN-M3 VS-15AWL06FN-M3 vs-15ewl06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A DPAK
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 220 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 6121 Stücke
Lieferzeit 21-28 Tag (e)
VS-15EWH06FN-M3 VS-15EWH06FN-M3 vs-15ewh06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 36 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20100CT-M3/4W MBR20100CT-M3/4W mbr20100.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 100V TO220
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
auf Bestellung 662 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4 EUR
10+ 3.6 EUR
100+ 2.89 EUR
500+ 2.38 EUR
VS-30WQ06FNHM3 VS-30WQ06FNHM3 vs-30wq06fn.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3.5A DPAK
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 30WQ06
auf Bestellung 9856 Stücke
Lieferzeit 21-28 Tag (e)
VS-30WQ10FNHM3 VS-30WQ10FNHM3 vs30wq10fn.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 3.5A DPAK
Base Part Number: 30WQ10
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 801 Stücke
Lieferzeit 21-28 Tag (e)
VS-HFA04SD60S-M3 VS-HFA04SD60S-M3 vs-hfa04sd6.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A TO252AA
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
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Lieferzeit 21-28 Tag (e)
6+ 4.47 EUR
10+ 4.03 EUR
100+ 3.24 EUR
500+ 2.66 EUR
1000+ 2.28 EUR
VS-50WQ06FNHM3 VS-50WQ06FNHM3 vs50wq06fn.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 5.5A TO252AA
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5.5A
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.73 EUR
10+ 4.25 EUR
VBT30L60C-E3/4W VBT30L60C-E3/4W vbt30l60c.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Base Part Number: VBT30L60
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 4mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 15A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08SD60S-M3 VS-HFA08SD60S-M3 vs-hfa08sd6.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO252AA
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-PAK (TO-252AA)
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Lieferzeit 21-28 Tag (e)
5+ 5.82 EUR
10+ 5.23 EUR
100+ 4.21 EUR
500+ 3.46 EUR
1000+ 2.96 EUR
VS-MBR745-N3 VS-MBR745-N3 VS-MBR7(35,45)(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MUR820-N3 VS-MUR820-N3 VS-MUR820(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08TA60C-N3 VS-HFA08TA60C-N3 VS-HFA08TA60C(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A TO220AB
Reverse Recovery Time (trr): 155 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETL06-N3 VS-8ETL06-N3 vs-8etl06fp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15TQ060-N3 VS-15TQ060-N3 VS-15TQ060(PbF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 15A TO220AC
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH03-N3 VS-15ETH03-N3 15ETH03PBF,N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 15A TO220AC
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 32 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS08S-M3 VS-8EWS08S-M3 vs-8ews08sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 8A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12S-M3 VS-8EWS12S-M3 vs-8ews08sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 8A TO252AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS12
auf Bestellung 94 Stücke
Lieferzeit 21-28 Tag (e)
VS-15ETL06-N3 VS-15ETL06-N3 VS-15ETL06PbF_FPPbf_VS-15ETL06-N3_FP-N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 270 ns
Diode Type: Standard
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH06-N3 VS-15ETH06-N3 VS-15ETH06PbF_FPPbF_VS-15ETH06-NE_FP-N3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 51 ns
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -60°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF02S-M3 VS-8EWF02S-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 8A TO252AA
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04S-M3 VS-8EWF04S-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 8A TO252AA
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 1964 Stücke
Lieferzeit 21-28 Tag (e)
4+ 8.63 EUR
10+ 7.76 EUR
100+ 6.36 EUR
500+ 5.41 EUR
1000+ 4.89 EUR
VS-8EWF06S-M3 VS-8EWF06S-M3 vs-8ewf02sm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-19TQ015-N3 VS-19TQ015-N3 TO-220AC-circuit.jpg Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 15V 19A TO220AC
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 19A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA15TB60-N3 VS-HFA15TB60-N3 VS-HFA15TB60(PBF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETS12FP-M3 VS-10ETS12FP-M3 vs-10ets08_12fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO220FP
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETX06FP-N3 VS-15ETX06FP-N3 vs-15etx06fp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 974 Stücke
Lieferzeit 21-28 Tag (e)
VS-16CTQ060-N3 VS-16CTQ060-N3 VS-16CTQ(PbF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 550µA @ 60V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-EPU6006-N3 VS-EPU6006-N3 vs-epu6006n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 60A TO247AC
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Base Part Number: EPU6006
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 356 Stücke
Lieferzeit 21-28 Tag (e)
VS-10ETF12-M3 VS-10ETF12-M3 vs-10etf1m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF04-M3 VS-10ETF04-M3 vs-10etf0m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 10A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 10A
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF04
Operating Temperature - Junction: -45°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF02SPBF VS-20ETF02SPBF VS-20ETF..SPbF_Series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 20A TO263
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 20ETF02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08PB60-N3 VS-HFA08PB60-N3 vs-hfa08pb6.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO247AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60APH03-N3 VS-60APH03-N3 vs-60aph03-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 60A TO247AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-42CTQ030-N3 VS-42CTQ030-N3 42CTQ030(PbF,N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08-M3 VS-20ETS08-M3 vs-20etsm3_vs-20atsm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08FP-M3 VS-20ETS08FP-M3 vs-20ets08_12fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 20A TO220FP
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA15PB60-N3 VS-HFA15PB60-N3 vs-hfa15pb6.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 15A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 616 Stücke - Preis und Lieferfrist anzeigen
VS-STPS30L60CW-N3 VS-STPS30L60CW-N3 vs-stps30l60cw-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 30A TO247AC
Current - Reverse Leakage @ Vr: 480µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Base Part Number: STPS30
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA06PB120-N3 VS-HFA06PB120-N3 vs-hfa06pb1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 6A TO247AC
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 6A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-APH3006-N3 VS-APH3006-N3 vs-aph3006n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 600V 30A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: APH3006
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 26ns
auf Bestellung 521 Stücke
Lieferzeit 21-28 Tag (e)
VS-HFA25TB60-N3 VS-HFA25TB60-N3 VS-HFA25TB60(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 25A TO220AC
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30EPH03-N3 VS-30EPH03-N3 vs-30eph03p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 30A TO247AC
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 38 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Diode Type: Standard
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF06-M3 VS-20ETF06-M3 vs-20etfm3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 20A TO220AC
Base Part Number: 20ETF06
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 600V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF12-M3 VS-20ETF12-M3 vs-20etf08s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF04FP-M3 VS-20ETF04FP-M3 vs-20etf02_04_06fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 20A TO220FP
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Part Status: Active
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Packaging: Tube
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: TO-220-2 Full Pack
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF02FP-M3 VS-20ETF02FP-M3 vs-20etf02_04_06fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 20A TO220FP
Base Part Number: 20ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60CTQ150-N3 VS-60CTQ150-N3 VS-60CTQ150(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 150V TO220
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF12FP-M3 VS-20ETF12FP-M3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 20A TO220FP
Base Part Number: 20ETF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF06FP-M3 VS-20ETF06FP-M3 vs-20etf02_04_06fp-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 20A TO220FP
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30EPH06-N3 VS-30EPH06-N3 vs-30eph06p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO247AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 31 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
auf Bestellung 987 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.3 EUR
10+ 14.62 EUR
100+ 11.98 EUR
500+ 10.2 EUR
VS-20ETF04-M3 VS-20ETF04-M3 vs-20etfm3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 20A TO220AC
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-STPS40L45CW-N3 VS-STPS40L45CW-N3 vs-stps40l45cw-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 45V TO247AC
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 13 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9.02 EUR
10+ 8.1 EUR
VS-STPS40L15CW-N3 VS-STPS40L15CW-N3 vs-stps40l15cw-n.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 15V 40A TO247AC
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60APU04-N3 VS-60APU04-N3 vs-60epu04-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 60A TO247AC
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS3P6HM3/84A ss3p5.pdf
SS3P6HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2739 Stücke - Preis und Lieferfrist anzeigen
GP15K-E3/54 gp15a.pdf
GP15K-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
SE20AFBHM3/6A se20afb.pdf
SE20AFBHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15317 Stücke - Preis und Lieferfrist anzeigen
SE20AFBHM3/6A se20afb.pdf
SE20AFBHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1753 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13564 Stücke - Preis und Lieferfrist anzeigen
SE20AFJHM3/6A se20afb.pdf
SE20AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5342 Stücke - Preis und Lieferfrist anzeigen
SE20AFJHM3/6A se20afb.pdf
SE20AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 5342 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
VSSA310S-E3/5AT vssa310s.pdf
VSSA310S-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9736 Stücke - Preis und Lieferfrist anzeigen
VSSA310S-E3/5AT vssa310s.pdf
VSSA310S-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9736 Stücke - Preis und Lieferfrist anzeigen
SS2PH10HM3/84A SS2PH9_PH10_Dec23_2014.pdf
SS2PH10HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE30AFGHM3/6A se30afb.pdf
SE30AFGHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1193 Stücke - Preis und Lieferfrist anzeigen
SE30AFGHM3/6A se30afb.pdf
SE30AFGHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO221AC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE30
auf Bestellung 1193 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
SE30AFJHM3/6A se30afb.pdf
SE30AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE30
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1311 Stücke - Preis und Lieferfrist anzeigen
SE30AFJHM3/6A se30afb.pdf
SE30AFJHM3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
auf Bestellung 1311 Stücke
Lieferzeit 21-28 Tag (e)
VSSB410S-E3/52T packaging.pdf
VSSB410S-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 250µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Current - Average Rectified (Io): 1.9A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13524 Stücke - Preis und Lieferfrist anzeigen
BYV38-TR byv37.pdf
BYV38-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14500 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.69 EUR
BYV38-TR byv37.pdf
BYV38-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 14500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.72 EUR
18+ 1.51 EUR
100+ 1.16 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
2000+ 0.69 EUR
VS-4EGU06-M3/5BT vs-4egu06-m3.pdf
VS-4EGU06-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Base Part Number: 4EGU06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
VS-4EGU06-M3/5BT vs-4egu06-m3.pdf
VS-4EGU06-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Base Part Number: 4EGU06
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 248 Stücke
Lieferzeit 21-28 Tag (e)
VSSA210HM3/61T vssa210.pdf
VSSA210HM3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-4ECH06-M3/9AT vs-4ech06-m3.pdf
VS-4ECH06-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 17500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19694 Stücke - Preis und Lieferfrist anzeigen
3500+ 0.8 EUR
VS-4ECH06-M3/9AT vs-4ech06-m3.pdf
VS-4ECH06-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 19694 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17500 Stücke - Preis und Lieferfrist anzeigen
13+ 2 EUR
15+ 1.77 EUR
100+ 1.36 EUR
500+ 1.07 EUR
1000+ 0.86 EUR
SS36HE3_A/H ss32.pdf
SS36HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
SS36HE3_A/H ss32.pdf
SS36HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
MURS340HE3_A/H murs340.pdf
MURS340HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7019 Stücke - Preis und Lieferfrist anzeigen
P600A-E3/54 p600a.pdf
P600A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Base Part Number: P600
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1082 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3202 Stücke - Preis und Lieferfrist anzeigen
VS-MURD620CTTR-M3 vs-murd620c.pdf
VS-MURD620CTTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 498 Stücke - Preis und Lieferfrist anzeigen
VS-5ECH06-M3/9AT vs-5ech06-m3.pdf
VS-5ECH06-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 23 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
auf Bestellung 12908 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10500 Stücke - Preis und Lieferfrist anzeigen
11+ 2.37 EUR
13+ 2.13 EUR
100+ 1.66 EUR
500+ 1.37 EUR
1000+ 1.08 EUR
SL44HE3_A/H sl42.pdf
SL44HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 8A DO214AB
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV20WS-HG3-18 bav19wsg.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VSB1545-M3/54
VSB1545-M3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A P600
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: B1545
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15AWL06FNTR-M3 vs-15ewl06fn-m3.pdf
VS-15AWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Base Part Number: 15AWL06
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22084 Stücke - Preis und Lieferfrist anzeigen
VS-15AWL06FNTR-M3 vs-15ewl06fn-m3.pdf
VS-15AWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Base Part Number: 15AWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2340 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21744 Stücke - Preis und Lieferfrist anzeigen
V10PL45-M3/86A v10pl45-m3.pdf
V10PL45-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4224 Stücke - Preis und Lieferfrist anzeigen
V10PL45-M3/86A v10pl45-m3.pdf
V10PL45-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 1377 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2847 Stücke - Preis und Lieferfrist anzeigen
9+ 3.17 EUR
10+ 2.85 EUR
100+ 2.22 EUR
500+ 1.83 EUR
VS-4EWH02FN-M3 vs-4ewh02fn.pdf
VS-4EWH02FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DPAK
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MURD620CT-M3 vs-murd620c.pdf
VS-MURD620CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-6EWH06FN-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO252AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 27 ns
auf Bestellung 26 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.31 EUR
13+ 2.03 EUR
VS-10WQ045FN-M3 vs-10wq045f.pdf
VS-10WQ045FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 760pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
auf Bestellung 2945 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.6 EUR
12+ 2.32 EUR
100+ 1.81 EUR
500+ 1.49 EUR
1000+ 1.18 EUR
VS-8EWL06FN-M3 vs-8ewl06fn-m3.pdf
VS-8EWL06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252AA
Base Part Number: 8EWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 170ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1151 Stücke
Lieferzeit 21-28 Tag (e)
VBT1045C-E3/4W vbt1045c.pdf
VBT1045C-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15AWL06FN-M3 vs-15ewl06fn-m3.pdf
VS-15AWL06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 220 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 6121 Stücke
Lieferzeit 21-28 Tag (e)
VS-15EWH06FN-M3 vs-15ewh06fn-m3.pdf
VS-15EWH06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 36 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR20100CT-M3/4W mbr20100.pdf
MBR20100CT-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO220
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
auf Bestellung 662 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4 EUR
10+ 3.6 EUR
100+ 2.89 EUR
500+ 2.38 EUR
VS-30WQ06FNHM3 vs-30wq06fn.pdf
VS-30WQ06FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3.5A DPAK
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 30WQ06
auf Bestellung 9856 Stücke
Lieferzeit 21-28 Tag (e)
VS-30WQ10FNHM3 vs30wq10fn.pdf
VS-30WQ10FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3.5A DPAK
Base Part Number: 30WQ10
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 801 Stücke
Lieferzeit 21-28 Tag (e)
VS-HFA04SD60S-M3 vs-hfa04sd6.pdf
VS-HFA04SD60S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO252AA
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 2816 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.47 EUR
10+ 4.03 EUR
100+ 3.24 EUR
500+ 2.66 EUR
1000+ 2.28 EUR
VS-50WQ06FNHM3 vs50wq06fn.pdf
VS-50WQ06FNHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.5A TO252AA
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5.5A
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.73 EUR
10+ 4.25 EUR
VBT30L60C-E3/4W vbt30l60c.pdf
VBT30L60C-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Base Part Number: VBT30L60
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 4mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 15A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08SD60S-M3 vs-hfa08sd6.pdf
VS-HFA08SD60S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252AA
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-PAK (TO-252AA)
auf Bestellung 5435 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.82 EUR
10+ 5.23 EUR
100+ 4.21 EUR
500+ 3.46 EUR
1000+ 2.96 EUR
VS-MBR745-N3 VS-MBR7(35,45)(PBF,-N3).pdf
VS-MBR745-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MUR820-N3 VS-MUR820(PBF,-N3).pdf
VS-MUR820-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08TA60C-N3 VS-HFA08TA60C(PBF,-N3).pdf
VS-HFA08TA60C-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO220AB
Reverse Recovery Time (trr): 155 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8ETL06-N3 vs-8etl06fp.pdf
VS-8ETL06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15TQ060-N3 VS-15TQ060(PbF,N3).pdf
VS-15TQ060-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO220AC
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH03-N3 15ETH03PBF,N3.pdf
VS-15ETH03-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO220AC
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 32 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS08S-M3 vs-8ews08sm.pdf
VS-8EWS08S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWS12S-M3 vs-8ews08sm.pdf
VS-8EWS12S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO252AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS12
auf Bestellung 94 Stücke
Lieferzeit 21-28 Tag (e)
VS-15ETL06-N3 VS-15ETL06PbF_FPPbf_VS-15ETL06-N3_FP-N3.pdf
VS-15ETL06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 270 ns
Diode Type: Standard
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETH06-N3 VS-15ETH06PbF_FPPbF_VS-15ETH06-NE_FP-N3.pdf
VS-15ETH06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 51 ns
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -60°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF02S-M3 vs-8ewf02sm.pdf
VS-8EWF02S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO252AA
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8EWF04S-M3 vs-8ewf02sm.pdf
VS-8EWF04S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO252AA
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 1964 Stücke
Lieferzeit 21-28 Tag (e)
4+ 8.63 EUR
10+ 7.76 EUR
100+ 6.36 EUR
500+ 5.41 EUR
1000+ 4.89 EUR
VS-8EWF06S-M3 vs-8ewf02sm.pdf
VS-8EWF06S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-19TQ015-N3 TO-220AC-circuit.jpg
VS-19TQ015-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 19A TO220AC
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 19A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA15TB60-N3 VS-HFA15TB60(PBF,N3).pdf
VS-HFA15TB60-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETS12FP-M3 vs-10ets08_12fp-m3.pdf
VS-10ETS12FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220FP
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15ETX06FP-N3 vs-15etx06fp.pdf
VS-15ETX06FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 974 Stücke
Lieferzeit 21-28 Tag (e)
VS-16CTQ060-N3 VS-16CTQ(PbF,N3).pdf
VS-16CTQ060-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 550µA @ 60V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-EPU6006-N3 vs-epu6006n3.pdf
VS-EPU6006-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AC
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Base Part Number: EPU6006
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 356 Stücke
Lieferzeit 21-28 Tag (e)
VS-10ETF12-M3 vs-10etf1m3.pdf
VS-10ETF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10ETF04-M3 vs-10etf0m3.pdf
VS-10ETF04-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 10A
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF04
Operating Temperature - Junction: -45°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF02SPBF VS-20ETF..SPbF_Series.pdf
VS-20ETF02SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO263
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 20ETF02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA08PB60-N3 vs-hfa08pb6.pdf
VS-HFA08PB60-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO247AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60APH03-N3 vs-60aph03-n3.pdf
VS-60APH03-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 60A TO247AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-42CTQ030-N3 42CTQ030(PbF,N3).pdf
VS-42CTQ030-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08-M3 vs-20etsm3_vs-20atsm3.pdf
VS-20ETS08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETS08FP-M3 vs-20ets08_12fp-m3.pdf
VS-20ETS08FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220FP
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA15PB60-N3 vs-hfa15pb6.pdf
VS-HFA15PB60-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 616 Stücke - Preis und Lieferfrist anzeigen
VS-STPS30L60CW-N3 vs-stps30l60cw-n3.pdf
VS-STPS30L60CW-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30A TO247AC
Current - Reverse Leakage @ Vr: 480µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Base Part Number: STPS30
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-HFA06PB120-N3 vs-hfa06pb1.pdf
VS-HFA06PB120-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO247AC
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 6A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-APH3006-N3 vs-aph3006n3.pdf
VS-APH3006-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 600V 30A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: APH3006
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 26ns
auf Bestellung 521 Stücke
Lieferzeit 21-28 Tag (e)
VS-HFA25TB60-N3 VS-HFA25TB60(PBF,-N3).pdf
VS-HFA25TB60-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO220AC
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30EPH03-N3 vs-30eph03p.pdf
VS-30EPH03-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 30A TO247AC
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 38 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Diode Type: Standard
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF06-M3 vs-20etfm3series.pdf
VS-20ETF06-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO220AC
Base Part Number: 20ETF06
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 600V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF12-M3 vs-20etf08s-m3.pdf
VS-20ETF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF04FP-M3 vs-20etf02_04_06fp-m3.pdf
VS-20ETF04FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO220FP
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Part Status: Active
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Packaging: Tube
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: TO-220-2 Full Pack
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF02FP-M3 vs-20etf02_04_06fp-m3.pdf
VS-20ETF02FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO220FP
Base Part Number: 20ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60CTQ150-N3 VS-60CTQ150(PBF,-N3).pdf
VS-60CTQ150-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V TO220
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF12FP-M3
VS-20ETF12FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220FP
Base Part Number: 20ETF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20ETF06FP-M3 vs-20etf02_04_06fp-m3.pdf
VS-20ETF06FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO220FP
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30EPH06-N3 vs-30eph06p.pdf
VS-30EPH06-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 31 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
auf Bestellung 987 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.3 EUR
10+ 14.62 EUR
100+ 11.98 EUR
500+ 10.2 EUR
VS-20ETF04-M3 vs-20etfm3series.pdf
VS-20ETF04-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO220AC
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-STPS40L45CW-N3 vs-stps40l45cw-n3.pdf
VS-STPS40L45CW-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO247AC
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 13 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9.02 EUR
10+ 8.1 EUR
VS-STPS40L15CW-N3 vs-stps40l15cw-n.pdf
VS-STPS40L15CW-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 40A TO247AC
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60APU04-N3 vs-60epu04-n3.pdf
VS-60APU04-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 60A TO247AC
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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