Die Produkte vishay general semiconductor - diodes division
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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~~2.jpg "SS3P6HM3/84A") |
SS3P6HM3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO220AA Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2739 Stücke - Preis und Lieferfrist anzeigen
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GP15K-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO204AC Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Average Rectified (Io): 1.5A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: GP15 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 3.5µs Speed: Standard Recovery >500ns, > 200mA (Io) |
auf Bestellung 4000 Stücke Lieferzeit 21-28 Tag (e) |
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SE20AFBHM3/6A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO221AC Base Part Number: SE20 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 1.2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Average Rectified (Io): 2A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13564 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO221AC Base Part Number: SE20 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 1.2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Average Rectified (Io): 2A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 1753 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13564 Stücke - Preis und Lieferfrist anzeigen
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SE20AFJHM3/6A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO221AC Reverse Recovery Time (trr): 1.2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Average Rectified (Io): 2A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SE20 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V |
auf Bestellung 3500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO221AC Reverse Recovery Time (trr): 1.2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Average Rectified (Io): 2A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SE20 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V |
auf Bestellung 5342 Stücke Lieferzeit 21-28 Tag (e) |
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VSSA310S-E3/5AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.7A DO214AC Base Part Number: SA310 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 175pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 150µA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Current - Average Rectified (Io): 1.7A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 7500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2236 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.7A DO214AC Current - Reverse Leakage @ Vr: 150µA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Current - Average Rectified (Io): 1.7A (DC) Voltage - DC Reverse (Vr) (Max): 100V Base Part Number: SA310 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 175pF @ 4V, 1MHz Diode Type: Schottky Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 7500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2236 Stücke - Preis und Lieferfrist anzeigen
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SS2PH10HM3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DO220AA Packaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SE30AFGHM3/6A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO221AC Base Part Number: SE30 Operating Temperature - Junction: -55°C ~ 175°C Current - Reverse Leakage @ Vr: 10µA @ 400V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Average Rectified (Io): 3A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 19pF @ 4V, 1MHz |
auf Bestellung 3500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO221AC Mounting Type: Surface Mount Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 400V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Average Rectified (Io): 3A (DC) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C Base Part Number: SE30 |
auf Bestellung 1193 Stücke Lieferzeit 21-28 Tag (e) |
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SE30AFJHM3/6A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO221AC Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Average Rectified (Io): 3A (DC) Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SE30 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO221AC Base Part Number: SE30 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-221AC (SlimSMA) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Average Rectified (Io): 3A (DC) Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Cut Tape (CT) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V |
auf Bestellung 1311 Stücke Lieferzeit 21-28 Tag (e) |
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VSSB410S-E3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.9A DO214AA Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Capacitance @ Vr, F: 230pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 250µA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A Current - Average Rectified (Io): 1.9A (DC) Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13524 Stücke - Preis und Lieferfrist anzeigen
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BYV38-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 2A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Cut Tape (CT) |
auf Bestellung 14500 Stücke Lieferzeit 21-28 Tag (e) |
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VS-4EGU06-M3/5BT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DO214AA Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Current - Average Rectified (Io): 4A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 3µA @ 600V Reverse Recovery Time (trr): 39ns Base Part Number: 4EGU06 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DO214AA Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 3µA @ 600V Reverse Recovery Time (trr): 39ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Base Part Number: 4EGU06 Operating Temperature - Junction: -55°C ~ 175°C Current - Average Rectified (Io): 4A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 248 Stücke Lieferzeit 21-28 Tag (e) |
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VSSA210HM3/61T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.7A DO214AC Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.7A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150µA @ 100V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-4ECH06-M3/9AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DO214AB Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 4A Reverse Recovery Time (trr): 22 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
auf Bestellung 17500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DO214AB Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 4A Reverse Recovery Time (trr): 22 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
auf Bestellung 19694 Stücke Lieferzeit 21-28 Tag (e) |
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SS36HE3_A/H |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214AB Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 500µA @ 60V Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214AB Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 500µA @ 60V Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C |
auf Bestellung 4 Stücke Lieferzeit 21-28 Tag (e) |
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MURS340HE3_A/H |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7019 Stücke - Preis und Lieferfrist anzeigen
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P600A-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 6A P600 Package / Case: P600, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 150pF @ 4V, 1MHz Base Part Number: P600 Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: P600 Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 2.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Current - Average Rectified (Io): 6A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 1082 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3202 Stücke - Preis und Lieferfrist anzeigen
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VS-MURD620CTTR-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 6A TO252AA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 19 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 498 Stücke - Preis und Lieferfrist anzeigen
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VS-5ECH06-M3/9AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 5A DO214AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Reverse Recovery Time (trr): 23 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC |
auf Bestellung 12908 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10500 Stücke - Preis und Lieferfrist anzeigen
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SL44HE3_A/H |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 8A DO214AB Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 40 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| BAV20WS-HG3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA (DC) Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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VSB1545-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 15A P600 Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: 1290pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C Base Part Number: B1545 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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VS-15AWL06FNTR-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 120ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A Current - Average Rectified (Io): 15A Base Part Number: 15AWL06 |
auf Bestellung 2000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 19744 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Base Part Number: 15AWL06 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 120ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2340 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 19744 Stücke - Preis und Lieferfrist anzeigen
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V10PL45-M3/86A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6A TO277A Current - Reverse Leakage @ Vr: 5 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2847 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6A TO277A Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 6A Current - Reverse Leakage @ Vr: 5 mA @ 45 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount |
auf Bestellung 1377 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2847 Stücke - Preis und Lieferfrist anzeigen
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VS-4EWH02FN-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A DPAK Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 4A Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-MURD620CT-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 6A TO252AA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 19 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-6EWH06FN-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 6A TO252AA Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 6A Reverse Recovery Time (trr): 27 ns |
auf Bestellung 26 Stücke Lieferzeit 21-28 Tag (e) |
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VS-10WQ045FN-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A DPAK Current - Reverse Leakage @ Vr: 1 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 760pF @ 5V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky |
auf Bestellung 2945 Stücke Lieferzeit 21-28 Tag (e) |
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VS-8EWL06FN-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO252AA Base Part Number: 8EWL06 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 170ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 1151 Stücke Lieferzeit 21-28 Tag (e) |
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VBT1045C-E3/4W |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-15AWL06FN-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 15A Reverse Recovery Time (trr): 220 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C |
auf Bestellung 6121 Stücke Lieferzeit 21-28 Tag (e) |
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VS-15EWH06FN-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Operating Temperature - Junction: -65°C ~ 175°C Speed: Fast Recovery =< 500ns, > 200mA (Io) Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 15A Reverse Recovery Time (trr): 36 ns Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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MBR20100CT-M3/4W |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 100V TO220 Voltage - DC Reverse (Vr) (Max): 100 V Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A |
auf Bestellung 662 Stücke Lieferzeit 21-28 Tag (e) |
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VS-30WQ06FNHM3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3.5A DPAK Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Current - Average Rectified (Io): 3.5A Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: 145pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C Base Part Number: 30WQ06 |
auf Bestellung 9856 Stücke Lieferzeit 21-28 Tag (e) |
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VS-30WQ10FNHM3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 3.5A DPAK Base Part Number: 30WQ10 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Capacitance @ Vr, F: 92pF @ 5V, 1MHz Current - Reverse Leakage @ Vr: 1mA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A Current - Average Rectified (Io): 3.5A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 801 Stücke Lieferzeit 21-28 Tag (e) |
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VS-HFA04SD60S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A TO252AA Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 4A Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 3 µA @ 600 V Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V |
auf Bestellung 2816 Stücke Lieferzeit 21-28 Tag (e) |
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VS-50WQ06FNHM3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5.5A TO252AA Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 5.5A Capacitance @ Vr, F: 360pF @ 5V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 3 mA @ 60 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active |
auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e) |
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VBT30L60C-E3/4W |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V TO263AB Base Part Number: VBT30L60 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature - Junction: 150°C (Max) Current - Reverse Leakage @ Vr: 4mA @ 60V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 600mV @ 15A Current - Average Rectified (Io) (per Diode): 15A Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-HFA08SD60S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO252AA Current - Average Rectified (Io): 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: D-PAK (TO-252AA) |
auf Bestellung 5435 Stücke Lieferzeit 21-28 Tag (e) |
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VS-MBR745-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 7.5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Capacitance @ Vr, F: 400pF @ 5V, 1MHz Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-MUR820-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO220AC Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard, Reverse Polarity Mounting Type: Through Hole Package / Case: TO-220-2 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-HFA08TA60C-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A TO220AB Reverse Recovery Time (trr): 155 ns Current - Average Rectified (Io): 4A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-8ETL06-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO220AC Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Obsolete Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170ns Current - Reverse Leakage @ Vr: 5µA @ 600V Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-15TQ060-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 15A TO220AC Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 720pF @ 5V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 800 µA @ 60 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-15ETH03-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 15A TO220AC Current - Reverse Leakage @ Vr: 40 µA @ 300 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 15A Reverse Recovery Time (trr): 32 ns Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-8EWS08S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 8A TO252AA Current - Reverse Leakage @ Vr: 50 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-8EWS12S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO252AA Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 1200V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: 8EWS12 |
auf Bestellung 94 Stücke Lieferzeit 21-28 Tag (e) |
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VS-15ETL06-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 15A Reverse Recovery Time (trr): 270 ns Diode Type: Standard Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-15ETH06-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Supplier Device Package: TO-220AC Current - Average Rectified (Io): 15A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Reverse Recovery Time (trr): 51 ns Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -60°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-8EWF02S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO252AA Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 8A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-8EWF04S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 8A TO252AA Current - Average Rectified (Io): 8A Current - Reverse Leakage @ Vr: 100 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 1964 Stücke Lieferzeit 21-28 Tag (e) |
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VS-8EWF06S-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO252AA Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: D-PAK (TO-252AA) Current - Average Rectified (Io): 8A Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-19TQ015-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 19A TO220AC Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A Voltage - DC Reverse (Vr) (Max): 15 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 19A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-HFA15TB60-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-10ETS12FP-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO220FP Current - Average Rectified (Io): 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-15ETX06FP-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 974 Stücke Lieferzeit 21-28 Tag (e) |
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VS-16CTQ060-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V TO220AB Packaging: Tube Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 8A Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 550µA @ 60V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-EPU6006-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 60A TO247AC Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Current - Average Rectified (Io): 60A Voltage - DC Reverse (Vr) (Max): 600V Base Part Number: EPU6006 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-247AC Modified Package / Case: TO-247-2 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 30µA @ 600V Reverse Recovery Time (trr): 110ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 356 Stücke Lieferzeit 21-28 Tag (e) |
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VS-10ETF12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO220AC Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Reverse Recovery Time (trr): 310 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-10ETF04-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 10A TO220AC Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 10A Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: 10ETF04 Operating Temperature - Junction: -45°C ~ 150°C Supplier Device Package: TO-220AC Package / Case: TO-220-2 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 400V Reverse Recovery Time (trr): 200ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETF02SPBF |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 20A TO263 Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tube Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 650V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Base Part Number: 20ETF02 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-HFA08PB60-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO247AC Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 8A Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-60APH03-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 60A TO247AC Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AC Current - Average Rectified (Io): 60A Reverse Recovery Time (trr): 42 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-42CTQ030-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V TO220AB Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A Current - Reverse Leakage @ Vr: 3 mA @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETS08-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO220AC Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 20A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100 µA @ 800 V Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETS08FP-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO220FP Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Package / Case: TO-220-2 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-HFA15PB60-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO247AC Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 15A Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 616 Stücke - Preis und Lieferfrist anzeigen
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VS-STPS30L60CW-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 30A TO247AC Current - Reverse Leakage @ Vr: 480µA @ 60V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Current - Average Rectified (Io): 30A Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Part Status: Active Base Part Number: STPS30 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AC Package / Case: TO-247-3 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-HFA06PB120-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 6A TO247AC Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A Diode Type: Standard Mounting Type: Through Hole Packaging: Tube Package / Case: TO-247-2 Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 6A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-APH3006-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 600V 30A TO247AC Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A Current - Average Rectified (Io): 30A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Schottky Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: APH3006 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AC Package / Case: TO-247-3 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 30µA @ 600V Reverse Recovery Time (trr): 26ns |
auf Bestellung 521 Stücke Lieferzeit 21-28 Tag (e) |
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VS-HFA25TB60-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 25A TO220AC Package / Case: TO-220-2 Current - Reverse Leakage @ Vr: 20 µA @ 600 V Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 25A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-30EPH03-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 30A TO247AC Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 30A Reverse Recovery Time (trr): 38 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 60 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Diode Type: Standard Mounting Type: Through Hole Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETF06-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO220AC Base Part Number: 20ETF06 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Package / Case: TO-220-2 Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tube Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 600V Reverse Recovery Time (trr): 160ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Current - Average Rectified (Io): 20A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETF12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO220AC Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 20A Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETF04FP-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO220FP Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Part Status: Active Current - Reverse Leakage @ Vr: 100µA @ 400V Reverse Recovery Time (trr): 160ns Packaging: Tube Base Part Number: 20ETF04 Operating Temperature - Junction: -40°C ~ 150°C Speed: Fast Recovery =< 500ns, > 200mA (Io) Supplier Device Package: TO-220-2 Full Pack Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A Current - Average Rectified (Io): 20A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETF02FP-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 20A TO220FP Base Part Number: 20ETF02 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 200V Reverse Recovery Time (trr): 160ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A Current - Average Rectified (Io): 20A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-60CTQ150-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 150V TO220 Current - Reverse Leakage @ Vr: 75 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-20ETF12FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO220FP Base Part Number: 20ETF12 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 1200V Reverse Recovery Time (trr): 400ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A Current - Average Rectified (Io): 20A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Standard Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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VS-20ETF06FP-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO220FP Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 20A Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-30EPH06-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO247AC Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 30A Reverse Recovery Time (trr): 31 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-2 |
auf Bestellung 987 Stücke Lieferzeit 21-28 Tag (e) |
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VS-20ETF04-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO220AC Base Part Number: 20ETF04 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220AC Package / Case: TO-220-2 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 400V Reverse Recovery Time (trr): 160ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Current - Average Rectified (Io): 20A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-STPS40L45CW-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V TO247AC Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AC Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 13 Stücke Lieferzeit 21-28 Tag (e) |
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VS-STPS40L15CW-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 40A TO247AC Current - Average Rectified (Io): 40A Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A Current - Reverse Leakage @ Vr: 10 mA @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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VS-60APU04-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 60A TO247AC Current - Reverse Leakage @ Vr: 50 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AC Current - Average Rectified (Io): 60A Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| SS3P6HM3/84A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO220AA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 3A DO220AA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
auf Bestellung 2739 Stücke - Preis und Lieferfrist anzeigen
| GP15K-E3/54 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 4000 Stücke Description: DIODE GEN PURP 800V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GP15
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Lieferzeit 21-28 Tag (e)
| SE20AFBHM3/6A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 15317 Stücke - Preis und Lieferfrist anzeigen
| SE20AFBHM3/6A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1753 Stücke Description: DIODE GEN PURP 100V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 13564 Stücke - Preis und Lieferfrist anzeigen
| SE20AFJHM3/6A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 3500 Stücke Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5342 Stücke - Preis und Lieferfrist anzeigen
| SE20AFJHM3/6A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
auf Bestellung 5342 Stücke Description: DIODE GEN PURP 600V 2A DO221AC
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
| VSSA310S-E3/5AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7500 Stücke Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 9736 Stücke - Preis und Lieferfrist anzeigen
| VSSA310S-E3/5AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7500 Stücke Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 1.7A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Base Part Number: SA310
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 9736 Stücke - Preis und Lieferfrist anzeigen
| SS2PH10HM3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
| SE30AFGHM3/6A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
auf Bestellung 3500 Stücke Description: DIODE GEN PURP 400V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Lieferzeit 21-28 Tag (e)
auf Bestellung 1193 Stücke - Preis und Lieferfrist anzeigen
| SE30AFGHM3/6A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO221AC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE30
auf Bestellung 1193 Stücke Description: DIODE GEN PURP 400V 3A DO221AC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE30
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
| SE30AFJHM3/6A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE30
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 3A DO221AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE30
auf Bestellung 1311 Stücke - Preis und Lieferfrist anzeigen
| SE30AFJHM3/6A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
auf Bestellung 1311 Stücke Description: DIODE GEN PURP 600V 3A DO221AC
Base Part Number: SE30
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A (DC)
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Lieferzeit 21-28 Tag (e)
| VSSB410S-E3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 250µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Current - Average Rectified (Io): 1.9A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1.9A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 250µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 4A
Current - Average Rectified (Io): 1.9A (DC)
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -40°C ~ 150°C
auf Bestellung 13524 Stücke - Preis und Lieferfrist anzeigen
| BYV38-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 14500 Stücke - Preis und Lieferfrist anzeigen
|
| BYV38-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 14500 Stücke Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| VS-4EGU06-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Base Part Number: 4EGU06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 4A DO214AA
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Base Part Number: 4EGU06
auf Bestellung 248 Stücke - Preis und Lieferfrist anzeigen
| VS-4EGU06-M3/5BT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Base Part Number: 4EGU06
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 248 Stücke Description: DIODE GEN PURP 600V 4A DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 3µA @ 600V
Reverse Recovery Time (trr): 39ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Base Part Number: 4EGU06
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
| VSSA210HM3/61T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
| VS-4ECH06-M3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 17500 Stücke Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 19694 Stücke - Preis und Lieferfrist anzeigen
|
| VS-4ECH06-M3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 19694 Stücke Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 17500 Stücke - Preis und Lieferfrist anzeigen
|
| SS36HE3_A/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
| SS36HE3_A/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 4 Stücke Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Lieferzeit 21-28 Tag (e)
| MURS340HE3_A/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 7019 Stücke - Preis und Lieferfrist anzeigen
| P600A-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Base Part Number: P600
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1082 Stücke Description: DIODE GEN PURP 50V 6A P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Base Part Number: P600
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 3202 Stücke - Preis und Lieferfrist anzeigen
| VS-MURD620CTTR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
auf Bestellung 498 Stücke - Preis und Lieferfrist anzeigen
| VS-5ECH06-M3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 23 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
auf Bestellung 12908 Stücke Description: DIODE GEN PURP 600V 5A DO214AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 23 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Lieferzeit 21-28 Tag (e)
auf Bestellung 10500 Stücke - Preis und Lieferfrist anzeigen
|
| SL44HE3_A/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 8A DO214AB
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 8A DO214AB
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
| BAV20WS-HG3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
| VSB1545-M3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A P600
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: B1545
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 15A P600
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 1290pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: B1545
| VS-15AWL06FNTR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Base Part Number: 15AWL06
auf Bestellung 2000 Stücke Description: DIODE GEN PURP 600V 15A DPAK
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Base Part Number: 15AWL06
Lieferzeit 21-28 Tag (e)
auf Bestellung 22084 Stücke - Preis und Lieferfrist anzeigen
| VS-15AWL06FNTR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Base Part Number: 15AWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2340 Stücke Description: DIODE GEN PURP 600V 15A DPAK
Base Part Number: 15AWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 120ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 21744 Stücke - Preis und Lieferfrist anzeigen
| V10PL45-M3/86A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 6A TO277A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
auf Bestellung 4224 Stücke - Preis und Lieferfrist anzeigen
| V10PL45-M3/86A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 1377 Stücke Description: DIODE SCHOTTKY 45V 6A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 2847 Stücke - Preis und Lieferfrist anzeigen
|
| VS-4EWH02FN-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DPAK
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 4A DPAK
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
| VS-MURD620CT-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 200V 6A TO252AA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
| VS-6EWH06FN-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO252AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 27 ns
auf Bestellung 26 Stücke Description: DIODE GEN PURP 600V 6A TO252AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 27 ns
Lieferzeit 21-28 Tag (e)
|
| VS-10WQ045FN-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 760pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
auf Bestellung 2945 Stücke Description: DIODE SCHOTTKY 45V 10A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 760pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Lieferzeit 21-28 Tag (e)
|
| VS-8EWL06FN-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252AA
Base Part Number: 8EWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 170ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1151 Stücke Description: DIODE GEN PURP 600V 8A TO252AA
Base Part Number: 8EWL06
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 170ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
| VBT1045C-E3/4W |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 45V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
| VS-15AWL06FN-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 220 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 6121 Stücke Description: DIODE GEN PURP 600V 15A DPAK
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 220 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Lieferzeit 21-28 Tag (e)
| VS-15EWH06FN-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 36 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 15A DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 36 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
| MBR20100CT-M3/4W |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO220
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
auf Bestellung 662 Stücke Description: DIODE ARRAY SCHOTTKY 100V TO220
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Lieferzeit 21-28 Tag (e)
|
| VS-30WQ06FNHM3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3.5A DPAK
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 30WQ06
auf Bestellung 9856 Stücke Description: DIODE SCHOTTKY 60V 3.5A DPAK
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 30WQ06
Lieferzeit 21-28 Tag (e)
| VS-30WQ10FNHM3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3.5A DPAK
Base Part Number: 30WQ10
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 801 Stücke Description: DIODE SCHOTTKY 100V 3.5A DPAK
Base Part Number: 30WQ10
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
| VS-HFA04SD60S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO252AA
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 2816 Stücke Description: DIODE GEN PURP 600V 4A TO252AA
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 4A
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Lieferzeit 21-28 Tag (e)
|
| VS-50WQ06FNHM3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.5A TO252AA
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5.5A
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
auf Bestellung 30 Stücke Description: DIODE SCHOTTKY 60V 5.5A TO252AA
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5.5A
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| VBT30L60C-E3/4W |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO263AB
Base Part Number: VBT30L60
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 4mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 15A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 60V TO263AB
Base Part Number: VBT30L60
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 4mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 15A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
| VS-HFA08SD60S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252AA
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-PAK (TO-252AA)
auf Bestellung 5435 Stücke Description: DIODE GEN PURP 600V 8A TO252AA
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: D-PAK (TO-252AA)
Lieferzeit 21-28 Tag (e)
|
| VS-MBR745-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
| VS-MUR820-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard, Reverse Polarity
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Packaging: Tube
| VS-HFA08TA60C-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO220AB
Reverse Recovery Time (trr): 155 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 4A TO220AB
Reverse Recovery Time (trr): 155 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| VS-8ETL06-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 8A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
| VS-15TQ060-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO220AC
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 15A TO220AC
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
| VS-15ETH03-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 15A TO220AC
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 32 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 15A TO220AC
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 32 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| VS-8EWS08S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 8A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
| VS-8EWS12S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO252AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS12
auf Bestellung 94 Stücke Description: DIODE GEN PURP 1.2KV 8A TO252AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS12
Lieferzeit 21-28 Tag (e)
| VS-15ETL06-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 270 ns
Diode Type: Standard
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 15A TO220AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 270 ns
Diode Type: Standard
Package / Case: TO-220-2
Packaging: Tube
| VS-15ETH06-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 51 ns
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -60°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 15A TO220AC
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 15A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Reverse Recovery Time (trr): 51 ns
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -60°C ~ 175°C
| VS-8EWF02S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO252AA
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 8A TO252AA
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
| VS-8EWF04S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO252AA
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 1964 Stücke Description: DIODE GEN PURP 400V 8A TO252AA
Current - Average Rectified (Io): 8A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| VS-8EWF06S-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 8A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
| VS-19TQ015-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 19A TO220AC
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 19A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 15V 19A TO220AC
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Voltage - DC Reverse (Vr) (Max): 15 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 19A
| VS-HFA15TB60-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 15A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| VS-10ETS12FP-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220FP
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 10A TO220FP
Current - Average Rectified (Io): 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
| VS-15ETX06FP-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 974 Stücke Description: DIODE GEN PURP 600V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Lieferzeit 21-28 Tag (e)
| VS-16CTQ060-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 550µA @ 60V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 550µA @ 60V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
| VS-EPU6006-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AC
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Base Part Number: EPU6006
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 356 Stücke Description: DIODE GEN PURP 600V 60A TO247AC
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 600V
Base Part Number: EPU6006
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 110ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
| VS-10ETF12-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| VS-10ETF04-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 10A
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF04
Operating Temperature - Junction: -45°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 10A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 10A
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 10ETF04
Operating Temperature - Junction: -45°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| VS-20ETF02SPBF |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO263
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 20ETF02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 20A TO263
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 20ETF02
| VS-HFA08PB60-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO247AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 8A TO247AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 8A
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
| VS-60APH03-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 60A TO247AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 60A TO247AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| VS-42CTQ030-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 30V TO220AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
| VS-20ETS08-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 20A TO220AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| VS-20ETS08FP-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220FP
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 20A TO220FP
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: TO-220-2 Full Pack
Packaging: Tube
| VS-HFA15PB60-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 15A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 15A
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 616 Stücke - Preis und Lieferfrist anzeigen
| VS-STPS30L60CW-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30A TO247AC
Current - Reverse Leakage @ Vr: 480µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Base Part Number: STPS30
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 60V 30A TO247AC
Current - Reverse Leakage @ Vr: 480µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 30A
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Base Part Number: STPS30
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
| VS-HFA06PB120-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO247AC
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 6A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 6A TO247AC
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-2
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 6A
| VS-APH3006-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 600V 30A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: APH3006
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 26ns
auf Bestellung 521 Stücke Description: DIODE SCHOTTKY 600V 30A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: APH3006
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 30µA @ 600V
Reverse Recovery Time (trr): 26ns
Lieferzeit 21-28 Tag (e)
| VS-HFA25TB60-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO220AC
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 25A TO220AC
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 25A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
| VS-30EPH03-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 30A TO247AC
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 38 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Diode Type: Standard
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 30A TO247AC
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 38 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Diode Type: Standard
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
| VS-20ETF06-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO220AC
Base Part Number: 20ETF06
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 600V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 20A TO220AC
Base Part Number: 20ETF06
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 600V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
| VS-20ETF12-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 20A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| VS-20ETF04FP-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO220FP
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Part Status: Active
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Packaging: Tube
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: TO-220-2 Full Pack
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 20A TO220FP
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Part Status: Active
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Packaging: Tube
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: TO-220-2 Full Pack
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
| VS-20ETF02FP-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO220FP
Base Part Number: 20ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 20A TO220FP
Base Part Number: 20ETF02
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 200V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
| VS-60CTQ150-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V TO220
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 150V TO220
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| VS-20ETF12FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220FP
Base Part Number: 20ETF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 20A TO220FP
Base Part Number: 20ETF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
| VS-20ETF06FP-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO220FP
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 20A TO220FP
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 20A
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
| VS-30EPH06-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 31 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
auf Bestellung 987 Stücke Description: DIODE GEN PURP 600V 30A TO247AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 30A
Reverse Recovery Time (trr): 31 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Lieferzeit 21-28 Tag (e)
|
| VS-20ETF04-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO220AC
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 20A TO220AC
Base Part Number: 20ETF04
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 400V
Reverse Recovery Time (trr): 160ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Current - Average Rectified (Io): 20A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tube
| VS-STPS40L45CW-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO247AC
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 13 Stücke Description: DIODE ARRAY SCHOTTKY 45V TO247AC
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| VS-STPS40L15CW-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 40A TO247AC
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 15V 40A TO247AC
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
| VS-60APU04-N3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 60A TO247AC
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 60A TO247AC
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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