Die Produkte vishay general semiconductor - diodes division

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VS-60APU02-N3 VS-60APU02-N3 vs-60epu02-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 60A TO247AC
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-STPS40L40CW-N3 VS-STPS40L40CW-N3 VS-STPS40L40CW(PBF,-N3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 40V TO247AC
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30APF10-M3 VS-30APF10-M3 vs-30pf0-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 30A TO247
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 30APF10
auf Bestellung 330 Stücke
Lieferzeit 21-28 Tag (e)
VS-40EPS16-M3 VS-40EPS16-M3 vs-40eps16-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPS08-M3 VS-60EPS08-M3 vs-60eps-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40EPF12-M3 VS-40EPF12-M3 vs-40epf-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 40A TO247AC
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPS12-M3 VS-60EPS12-M3 vs-60eps-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE 1.2KV 60A TO247AC
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 60EPS12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
auf Bestellung 207 Stücke
Lieferzeit 21-28 Tag (e)
VS-60EPS16-M3 VS-60EPS16-M3 vs-60eps16-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 60A TO247AC
Mounting Type: Through Hole
Base Part Number: 60EPS16
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 463 Stücke
Lieferzeit 21-28 Tag (e)
VS-80APS08-M3 VS-80APS08-M3 vs-80aps-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 80A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 80APS08
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
VS-60APF12-M3 VS-60APF12-M3 vs-60pf1-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 60A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPF12-M3 VS-60EPF12-M3 vs-60pf1-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-80APF12-M3 VS-80APF12-M3 vs-80apf1-m3series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 80A TO247AC
Base Part Number: 80APF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 480ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
Current - Average Rectified (Io): 80A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
1N4151TAP 1N4151TAP 1n4151.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA DO35
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13059 Stücke - Preis und Lieferfrist anzeigen
1N4154TAP 1N4154TAP 1n4154.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 25V 150MA DO35
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12973 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.053 EUR
1N914TAP 1N914TAP 1n914.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 300MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
auf Bestellung 40000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 334 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.053 EUR
30000+ 0.048 EUR
1N4154TR 1N4154TR 1n4154.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 25V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 202042 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.053 EUR
BAW76-TAP BAW76-TAP baw76.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 300MA DO35
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39602 Stücke - Preis und Lieferfrist anzeigen
BAW76-TR BAW76-TR baw76.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 300MA DO35
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Base Part Number: BAW76
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 50000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 58015 Stücke - Preis und Lieferfrist anzeigen
1N4148-P-TAP 1N4148-P-TAP 1n4148p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 2A DO35
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8272 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.06 EUR
30000+ 0.054 EUR
BAV20-TAP BAV20-TAP bav17.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 250MA DO35
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2427 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.061 EUR
1N4148-P-TR 1N4148-P-TR 1n4148p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 2A DO35
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
auf Bestellung 50000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 61958 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.055 EUR
30000+ 0.05 EUR
50000+ 0.044 EUR
BAV20-TR BAV20-TR bav17.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 250MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LL4448-GS18 LL4448-GS18 ll4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 300MA SOD80
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150TAP 1N4150TAP 1n4150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18002 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.064 EUR
BAV21-TAP BAV21-TAP bav17.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 250MA DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13515 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.064 EUR
LL4151-GS18 LL4151-GS18 ll4151.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8277 Stücke - Preis und Lieferfrist anzeigen
LL4148-M-18 LL4148-M-18 ll4148m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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LL4148-M-08 LL4148-M-08 ll4148m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 300MA SOD80
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
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BAW27-TAP BAW27-TAP baw27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 60V 600MA DO35
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Base Part Number: BAW27
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MMBD914-E3-18 MMBD914-E3-18 mmbd914.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BAV100-GS18 BAV100-GS18 bav100.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 250MA SOD80
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV102-GS18 BAV102-GS18 bav100.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 250MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAV200-GS18 BAV200-GS18 bav200.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 250MA SOD80
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV201-GS18 BAV201-GS18 bav200.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV202-GS18 BAV202-GS18 bav200.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 250MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
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LL4150-M-18 LL4150-M-18 ll4150-m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Average Rectified (Io): 600mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MCL4151-TR3 MCL4151-TR3 mcl4151.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 200MA MICMELF
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 200mA
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAV200-GS08 BAV200-GS08 bav200.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 250MA SOD80
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
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LL4150-M-08 LL4150-M-08 ll4150-m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV301-TR BAV301-TR bav300.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 100V 250MA MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
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BAV203-GS18 BAV203-GS18 bav200.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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MMBD914-HE3-18 MMBD914-HE3-18 mmbd914.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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MMBD914-HE3-08 MMBD914-HE3-08 mmbd914.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MCL4448-TR3 MCL4448-TR3 mlc4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 75V 150MA MICROMELF
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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BAS16WS-E3-18 BAS16WS-E3-18 bas16ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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BAS19-E3-18 BAS19-E3-18 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS20-E3-18 BAS20-E3-18 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 200mA
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10000+ 0.073 EUR
BAV99-E3-18 BAV99-E3-18 bav99.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io) (per Diode): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-E3-08 BAS19-E3-08 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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BAS20-E3-08 BAS20-E3-08 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 200MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV302-TR BAV302-TR bav300.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 150V 250MA MICROMELF
Base Part Number: BAV302
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 150V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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BAS16-E3-18 BAS16-E3-18 bas16.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BAS16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAL99-E3-08 BAL99-E3-08 bal99.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 70V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV303-TR3 BAV303-TR3 bav300.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 200V 250MA MICROMELF
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: MicroMELF
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAV303-TR BAV303-TR bav300.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 200V 250MA MICROMELF
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 298 Stücke - Preis und Lieferfrist anzeigen
BAS16WS-HE3-18 BAS16WS-HE3-18 bas16ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-HE3-18 BAS19-HE3-18 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS20-HE3-18 BAS20-HE3-18 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV99-HE3-18 BAV99-HE3-18 bav99.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16WS-HE3-08 BAS16WS-HE3-08 bas16ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-HE3-08 BAS19-HE3-08 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS20-HE3-08 BAS20-HE3-08 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAV99-HE3-08 BAV99-HE3-08 bav99.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 150MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13595 Stücke - Preis und Lieferfrist anzeigen
1N4148WS-E3-18 1N4148WS-E3-18 1n4148ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13298 Stücke - Preis und Lieferfrist anzeigen
BAS21-E3-18 BAS21-E3-18 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
MMBD914-G3-18 MMBD914-G3-18 mmbd914g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD914-G3-08 MMBD914-G3-08 mmbd914g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV300-TR3 BAV300-TR3 bav300.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 50V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16-HE3-18 BAS16-HE3-18 bas16.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16-HE3-08 BAS16-HE3-08 bas16.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IMBD4148-HE3-08 IMBD4148-HE3-08 imbd4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4148W-HE3-18 1N4148W-HE3-18 1n4148w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD123
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148WS-HE3-18 1N4148WS-HE3-18 1n4148ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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Lieferzeit 21-28 Tag (e)
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.081 EUR
30000+ 0.076 EUR
50000+ 0.072 EUR
1N4148W-HE3-08 1N4148W-HE3-08 1n4148w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD123
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148WS-HE3-08 1N4148WS-HE3-08 1n4148ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15550 Stücke - Preis und Lieferfrist anzeigen
BAS21-HE3-08 BAS21-HE3-08 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 200MA SOT23
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11604 Stücke - Preis und Lieferfrist anzeigen
BAS21-HE3-18 BAS21-HE3-18 bas19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4151WS-E3-18 1N4151WS-E3-18 1n4151ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4151WS-E3-08 1N4151WS-E3-08 1n4151ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAV99-G3-08 BAV99-G3-08 bav99g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 150MA SOT23
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4151WS-HE3-18 1N4151WS-HE3-18 1n4151ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4151WS-HE3-08 1N4151WS-HE3-08 1n4151ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-E3-18 1N4150W-E3-18 1n4150w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4151W-E3-18 1N4151W-E3-18 1n4151w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448W-E3-18 1N4448W-E3-18 1n4448w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448WS-E3-18 1N4448WS-E3-18 1n4448ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD7000-E3-18 MMBD7000-E3-18 mmbd7000.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4151W-E3-08 1N4151W-E3-08 1n4151w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4448WS-E3-08 1N4448WS-E3-08 1n4448ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Diode Type: Standard
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16WS-G3-18 BAS16WS-G3-18 bas16wsg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-G3-18 BAS19-G3-18 bas19g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16WS-G3-08 BAS16WS-G3-08 bas16wsg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 250MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAS19-G3-08 BAS19-G3-08 bas19g.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-HE3-18 1N4150W-HE3-18 1n4150w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4151W-HE3-18 1N4151W-HE3-18 1n4151w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD123
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448W-HE3-18 1N4448W-HE3-18 1n4448w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448WS-HE3-18 1N4448WS-HE3-18 1n4448ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD7000-HE3-18 MMBD7000-HE3-18 mmbd7000.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-HE3-08 1N4150W-HE3-08 1n4150w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4151W-HE3-08 1N4151W-HE3-08 1n4151w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60APU02-N3 vs-60epu02-n3.pdf
VS-60APU02-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 60A TO247AC
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-STPS40L40CW-N3 VS-STPS40L40CW(PBF,-N3).pdf
VS-STPS40L40CW-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V TO247AC
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30APF10-M3 vs-30pf0-m3series.pdf
VS-30APF10-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 30A TO247
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 30APF10
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VS-40EPS16-M3 vs-40eps16-m3.pdf
VS-40EPS16-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPS08-M3 vs-60eps-m3series.pdf
VS-60EPS08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40EPF12-M3 vs-40epf-m3series.pdf
VS-40EPF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 40A TO247AC
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPS12-M3 vs-60eps-m3series.pdf
VS-60EPS12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 1.2KV 60A TO247AC
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 60EPS12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
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Lieferzeit 21-28 Tag (e)
VS-60EPS16-M3 vs-60eps16-m3series.pdf
VS-60EPS16-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 60A TO247AC
Mounting Type: Through Hole
Base Part Number: 60EPS16
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 463 Stücke
Lieferzeit 21-28 Tag (e)
VS-80APS08-M3 vs-80aps-m3series.pdf
VS-80APS08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 80A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 80APS08
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
VS-60APF12-M3 vs-60pf1-m3series.pdf
VS-60APF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-60EPF12-M3 vs-60pf1-m3series.pdf
VS-60EPF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-80APF12-M3 vs-80apf1-m3series.pdf
VS-80APF12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 80A TO247AC
Base Part Number: 80APF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 480ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
Current - Average Rectified (Io): 80A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
1N4151TAP 1n4151.pdf
1N4151TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA DO35
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13059 Stücke - Preis und Lieferfrist anzeigen
1N4154TAP 1n4154.pdf
1N4154TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 25V 150MA DO35
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12973 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.053 EUR
1N914TAP 1n914.pdf
1N914TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
auf Bestellung 40000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 334 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.053 EUR
30000+ 0.048 EUR
1N4154TR 1n4154.pdf
1N4154TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 25V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 202042 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.053 EUR
BAW76-TAP baw76.pdf
BAW76-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39602 Stücke - Preis und Lieferfrist anzeigen
BAW76-TR baw76.pdf
BAW76-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Base Part Number: BAW76
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 50000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 58015 Stücke - Preis und Lieferfrist anzeigen
1N4148-P-TAP 1n4148p.pdf
1N4148-P-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 2A DO35
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8272 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.06 EUR
30000+ 0.054 EUR
BAV20-TAP bav17.pdf
BAV20-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA DO35
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2427 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.061 EUR
1N4148-P-TR 1n4148p.pdf
1N4148-P-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 2A DO35
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
auf Bestellung 50000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 61958 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.055 EUR
30000+ 0.05 EUR
50000+ 0.044 EUR
BAV20-TR bav17.pdf
BAV20-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LL4448-GS18 ll4148.pdf
LL4448-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA SOD80
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150TAP 1n4150.pdf
1N4150TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18002 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.064 EUR
BAV21-TAP bav17.pdf
BAV21-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13515 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.064 EUR
LL4151-GS18 ll4151.pdf
LL4151-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8277 Stücke - Preis und Lieferfrist anzeigen
LL4148-M-18 ll4148m.pdf
LL4148-M-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5659 Stücke - Preis und Lieferfrist anzeigen
LL4148-M-08 ll4148m.pdf
LL4148-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA SOD80
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16272 Stücke - Preis und Lieferfrist anzeigen
BAW27-TAP baw27.pdf
BAW27-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Base Part Number: BAW27
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11834 Stücke - Preis und Lieferfrist anzeigen
MMBD914-E3-18 mmbd914.pdf
MMBD914-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6639 Stücke - Preis und Lieferfrist anzeigen
BAV100-GS18 bav100.pdf
BAV100-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV102-GS18 bav100.pdf
BAV102-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
BAV200-GS18 bav200.pdf
BAV200-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV201-GS18 bav200.pdf
BAV201-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV202-GS18 bav200.pdf
BAV202-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9290 Stücke - Preis und Lieferfrist anzeigen
LL4150-M-18 ll4150-m.pdf
LL4150-M-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Average Rectified (Io): 600mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MCL4151-TR3 mcl4151.pdf
MCL4151-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA MICMELF
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 200mA
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
BAV200-GS08 bav200.pdf
BAV200-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LL4150-M-08 ll4150-m.pdf
LL4150-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV301-TR bav300.pdf
BAV301-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 250MA MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34550 Stücke - Preis und Lieferfrist anzeigen
BAV203-GS18 bav200.pdf
BAV203-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD914-HE3-18 mmbd914.pdf
MMBD914-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8910 Stücke - Preis und Lieferfrist anzeigen
MMBD914-HE3-08 mmbd914.pdf
MMBD914-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MCL4448-TR3 mlc4148.pdf
MCL4448-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA MICROMELF
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28161 Stücke - Preis und Lieferfrist anzeigen
BAS16WS-E3-18 bas16ws.pdf
BAS16WS-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8724 Stücke - Preis und Lieferfrist anzeigen
BAS19-E3-18 bas19.pdf
BAS19-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS20-E3-18 bas19.pdf
BAS20-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 200mA
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33528 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.073 EUR
BAV99-E3-18 bav99.pdf
BAV99-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io) (per Diode): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-E3-08 bas19.pdf
BAS19-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15219 Stücke - Preis und Lieferfrist anzeigen
BAS20-E3-08 bas19.pdf
BAS20-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV302-TR bav300.pdf
BAV302-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 250MA MICROMELF
Base Part Number: BAV302
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 150V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15993 Stücke - Preis und Lieferfrist anzeigen
BAS16-E3-18 bas16.pdf
BAS16-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BAS16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAL99-E3-08 bal99.pdf
BAL99-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV303-TR3 bav300.pdf
BAV303-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 250MA MICROMELF
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: MicroMELF
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 187 Stücke - Preis und Lieferfrist anzeigen
BAV303-TR bav300.pdf
BAV303-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 250MA MICROMELF
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 298 Stücke - Preis und Lieferfrist anzeigen
BAS16WS-HE3-18 bas16ws.pdf
BAS16WS-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-HE3-18 bas19.pdf
BAS19-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS20-HE3-18 bas19.pdf
BAS20-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV99-HE3-18 bav99.pdf
BAV99-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16WS-HE3-08 bas16ws.pdf
BAS16WS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-HE3-08 bas19.pdf
BAS19-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS20-HE3-08 bas19.pdf
BAS20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22520 Stücke - Preis und Lieferfrist anzeigen
BAV99-HE3-08 bav99.pdf
BAV99-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13595 Stücke - Preis und Lieferfrist anzeigen
1N4148WS-E3-18 1n4148ws.pdf
1N4148WS-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13298 Stücke - Preis und Lieferfrist anzeigen
BAS21-E3-18 bas19.pdf
BAS21-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
MMBD914-G3-18 mmbd914g.pdf
MMBD914-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD914-G3-08 mmbd914g.pdf
MMBD914-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV300-TR3 bav300.pdf
BAV300-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 50V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16-HE3-18 bas16.pdf
BAS16-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16-HE3-08 bas16.pdf
BAS16-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10806 Stücke - Preis und Lieferfrist anzeigen
IMBD4148-HE3-08 imbd4148.pdf
IMBD4148-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14983 Stücke - Preis und Lieferfrist anzeigen
1N4148W-HE3-18 1n4148w.pdf
1N4148W-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148WS-HE3-18 1n4148ws.pdf
1N4148WS-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 60000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.081 EUR
30000+ 0.076 EUR
50000+ 0.072 EUR
1N4148W-HE3-08 1n4148w.pdf
1N4148W-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148WS-HE3-08 1n4148ws.pdf
1N4148WS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15550 Stücke - Preis und Lieferfrist anzeigen
BAS21-HE3-08 bas19.pdf
BAS21-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 200MA SOT23
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11604 Stücke - Preis und Lieferfrist anzeigen
BAS21-HE3-18 bas19.pdf
BAS21-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
1N4151WS-E3-18 1n4151ws.pdf
1N4151WS-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1875 Stücke - Preis und Lieferfrist anzeigen
1N4151WS-E3-08 1n4151ws.pdf
1N4151WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7699 Stücke - Preis und Lieferfrist anzeigen
BAV99-G3-08 bav99g.pdf
BAV99-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11836 Stücke - Preis und Lieferfrist anzeigen
1N4151WS-HE3-18 1n4151ws.pdf
1N4151WS-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4151WS-HE3-08 1n4151ws.pdf
1N4151WS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-E3-18 1n4150w.pdf
1N4150W-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9155 Stücke - Preis und Lieferfrist anzeigen
1N4151W-E3-18 1n4151w.pdf
1N4151W-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448W-E3-18 1n4448w.pdf
1N4448W-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448WS-E3-18 1n4448ws.pdf
1N4448WS-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD7000-E3-18 mmbd7000.pdf
MMBD7000-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4151W-E3-08 1n4151w.pdf
1N4151W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19113 Stücke - Preis und Lieferfrist anzeigen
1N4448WS-E3-08 1n4448ws.pdf
1N4448WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Diode Type: Standard
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16WS-G3-18 bas16wsg.pdf
BAS16WS-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19-G3-18 bas19g.pdf
BAS19-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16WS-G3-08 bas16wsg.pdf
BAS16WS-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11272 Stücke - Preis und Lieferfrist anzeigen
BAS19-G3-08 bas19g.pdf
BAS19-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-HE3-18 1n4150w.pdf
1N4150W-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4151W-HE3-18 1n4151w.pdf
1N4151W-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448W-HE3-18 1n4448w.pdf
1N4448W-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4448WS-HE3-18 1n4448ws.pdf
1N4448WS-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMBD7000-HE3-18 mmbd7000.pdf
MMBD7000-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-HE3-08 1n4150w.pdf
1N4150W-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1934 Stücke - Preis und Lieferfrist anzeigen
1N4151W-HE3-08 1n4151w.pdf
1N4151W-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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