Die Produkte vishay general semiconductor - diodes division
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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VS-60APU02-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 60A TO247AC Supplier Device Package: TO-247AC Current - Average Rectified (Io): 60A Reverse Recovery Time (trr): 28 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-STPS40L40CW-N3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V TO247AC Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AC Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-30APF10-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 30A TO247 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Package / Case: TO-247-3 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 1000V Reverse Recovery Time (trr): 450ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Current - Average Rectified (Io): 30A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: 30APF10 |
auf Bestellung 330 Stücke Lieferzeit 21-28 Tag (e) |
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VS-40EPS16-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 40A TO247AC Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 40A Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-60EPS08-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 60A TO247AC Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Modified Package / Case: TO-247-2 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 800V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A Current - Average Rectified (Io): 60A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-40EPF12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 40A TO247AC Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 1200V Reverse Recovery Time (trr): 450ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 40A Current - Average Rectified (Io): 40A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Standard Part Status: Active Packaging: Tube Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Modified Package / Case: TO-247-2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-60EPS12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE 1.2KV 60A TO247AC Current - Average Rectified (Io): 60A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: 60EPS12 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Modified Package / Case: TO-247-2 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 1200V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A |
auf Bestellung 207 Stücke Lieferzeit 21-28 Tag (e) |
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VS-60EPS16-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 60A TO247AC Mounting Type: Through Hole Base Part Number: 60EPS16 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Modified Package / Case: TO-247-2 Current - Reverse Leakage @ Vr: 100µA @ 1600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 60A Current - Average Rectified (Io): 60A Voltage - DC Reverse (Vr) (Max): 1600V Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 463 Stücke Lieferzeit 21-28 Tag (e) |
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VS-80APS08-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 80A TO247AC Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Package / Case: TO-247-3 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 800V Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: 80APS08 |
auf Bestellung 1500 Stücke Lieferzeit 21-28 Tag (e) |
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VS-60APF12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 60A TO247AC Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Current - Average Rectified (Io): 60A Reverse Recovery Time (trr): 480 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-60EPF12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 60A TO247AC Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Modified Current - Average Rectified (Io): 60A Reverse Recovery Time (trr): 480 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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VS-80APF12-M3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 80A TO247AC Base Part Number: 80APF12 Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-247AC Package / Case: TO-247-3 Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 1200V Reverse Recovery Time (trr): 480ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A Current - Average Rectified (Io): 80A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Standard Part Status: Active Packaging: Tube Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 500 Stücke Lieferzeit 21-28 Tag (e) |
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1N4151TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA DO35 Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Part Status: Active Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13059 Stücke - Preis und Lieferfrist anzeigen
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1N4154TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 25V 150MA DO35 Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100 nA @ 25 V Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Voltage - DC Reverse (Vr) (Max): 25 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C |
auf Bestellung 20000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12973 Stücke - Preis und Lieferfrist anzeigen
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1N914TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 300MA DO35 Operating Temperature - Junction: -65°C ~ 175°C Current - Average Rectified (Io): 300mA Supplier Device Package: DO-35 (DO-204AH) Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active |
auf Bestellung 40000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 334 Stücke - Preis und Lieferfrist anzeigen
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1N4154TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 25V 150MA DO35 Current - Reverse Leakage @ Vr: 100 nA @ 25 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Voltage - DC Reverse (Vr) (Max): 25 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 202042 Stücke - Preis und Lieferfrist anzeigen
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BAW76-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 300MA DO35 Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 300mA (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Box (TB) |
auf Bestellung 30000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 39602 Stücke - Preis und Lieferfrist anzeigen
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BAW76-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 300MA DO35 Mounting Type: Through Hole Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 50V Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Base Part Number: BAW76 Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial |
auf Bestellung 50000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 58015 Stücke - Preis und Lieferfrist anzeigen
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1N4148-P-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 2A DO35 Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) |
auf Bestellung 30000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8272 Stücke - Preis und Lieferfrist anzeigen
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BAV20-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 250MA DO35 Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA |
auf Bestellung 20000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2427 Stücke - Preis und Lieferfrist anzeigen
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1N4148-P-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 2A DO35 Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 150mA |
auf Bestellung 50000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 61958 Stücke - Preis und Lieferfrist anzeigen
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BAV20-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 250MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA (DC) Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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LL4448-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 300MA SOD80 Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Part Status: Active Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 25 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 75 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 MiniMELF Current - Average Rectified (Io): 300mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4150TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA DO35 Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-35 (DO-204AH) Current - Average Rectified (Io): 150mA Mounting Type: Through Hole Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial |
auf Bestellung 20000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 18002 Stücke - Preis und Lieferfrist anzeigen
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BAV21-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 250MA DO35 Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Current - Average Rectified (Io): 250mA (DC) Supplier Device Package: DO-35 (DO-204AH) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
auf Bestellung 20000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13515 Stücke - Preis und Lieferfrist anzeigen
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LL4151-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 300MA SOD80 Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 MiniMELF Current - Average Rectified (Io): 300mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50 nA @ 50 V Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8277 Stücke - Preis und Lieferfrist anzeigen
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LL4148-M-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 300MA SOD80 Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 MiniMELF Current - Reverse Leakage @ Vr: 25 nA @ 20 V Current - Average Rectified (Io): 300mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 8 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5659 Stücke - Preis und Lieferfrist anzeigen
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LL4148-M-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 300MA SOD80 Current - Reverse Leakage @ Vr: 25 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 MiniMELF Current - Average Rectified (Io): 300mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 8 ns Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16272 Stücke - Preis und Lieferfrist anzeigen
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BAW27-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 60V 600MA DO35 Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Box (TB) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 600mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 100nA @ 60V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Base Part Number: BAW27 |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11834 Stücke - Preis und Lieferfrist anzeigen
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MMBD914-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6639 Stücke - Preis und Lieferfrist anzeigen
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BAV100-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 250MA SOD80 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV102-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 250MA SOD80 Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 MiniMELF Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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BAV200-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 250MA SOD80 Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-80 QuadroMELF Package / Case: SOD-80 Variant Mounting Type: Surface Mount Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 50V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV201-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 250MA SOD80 Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA (DC) Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV202-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 250MA SOD80 Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-80 QuadroMELF Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9290 Stücke - Preis und Lieferfrist anzeigen
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LL4150-M-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 600MA SOD80 Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-80 MiniMELF Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Current - Average Rectified (Io): 600mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MCL4151-TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 200MA MICMELF Supplier Device Package: MicroMELF Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 50nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 200mA Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
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BAV200-GS08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 250MA SOD80 Supplier Device Package: SOD-80 QuadroMELF Package / Case: SOD-80 Variant Mounting Type: Surface Mount Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100nA @ 50V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Operating Temperature - Junction: 150°C (Max) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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LL4150-M-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 600MA SOD80 Part Status: Active Packaging: Tape & Reel (TR) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV301-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 250MA MICROMELF Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: 175°C (Max) Supplier Device Package: MicroMELF Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 34550 Stücke - Preis und Lieferfrist anzeigen
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BAV203-GS18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 250MA SOD80 Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA (DC) Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MMBD914-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8910 Stücke - Preis und Lieferfrist anzeigen
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MMBD914-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MCL4448-TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 75V 150MA MICROMELF Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: MicroMELF Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 8 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28161 Stücke - Preis und Lieferfrist anzeigen
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BAS16WS-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 250MA SOD323 Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8724 Stücke - Preis und Lieferfrist anzeigen
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BAS19-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS20-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 200MA SOT23 Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 200mA |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33528 Stücke - Preis und Lieferfrist anzeigen
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BAV99-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 70V 150MA SOT23 Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Diode Configuration: 1 Pair Series Connection Reverse Recovery Time (trr): 6 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Average Rectified (Io) (per Diode): 150mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS19-E3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15219 Stücke - Preis und Lieferfrist anzeigen
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BAS20-E3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 200MA SOT23 Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Current - Reverse Leakage @ Vr: 100 nA @ 150 V Diode Type: Standard Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV302-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 150V 250MA MICROMELF Base Part Number: BAV302 Operating Temperature - Junction: 175°C (Max) Supplier Device Package: MicroMELF Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 150V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 15993 Stücke - Preis und Lieferfrist anzeigen
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BAS16-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOT23 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: BAS16 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAL99-E3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 250MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV303-TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 250MA MICROMELF Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA (DC) Supplier Device Package: MicroMELF Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 187 Stücke - Preis und Lieferfrist anzeigen
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BAV303-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 250MA MICROMELF Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: MicroMELF Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 298 Stücke - Preis und Lieferfrist anzeigen
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BAS16WS-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 250MA SOD323 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS19-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS20-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV99-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 70V 150MA SOT23 Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Diode Configuration: 1 Pair Series Connection Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS16WS-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 250MA SOD323 Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS19-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS20-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22520 Stücke - Preis und Lieferfrist anzeigen
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BAV99-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 70V 150MA SOT23 Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13595 Stücke - Preis und Lieferfrist anzeigen
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1N4148WS-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD323 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13298 Stücke - Preis und Lieferfrist anzeigen
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BAS21-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 200MA SOT23 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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MMBD914-G3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MMBD914-G3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAV300-TR3 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 50V 250MA MICROMELF Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 175°C (Max) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS16-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS16-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOT23 Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 150mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 6 ns Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10806 Stücke - Preis und Lieferfrist anzeigen
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IMBD4148-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOT23 Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14983 Stücke - Preis und Lieferfrist anzeigen
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1N4148W-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD123 Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4148WS-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD323 Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
auf Bestellung 60000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
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1N4148W-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD123 Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4148WS-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD323 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15550 Stücke - Preis und Lieferfrist anzeigen
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BAS21-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 200MA SOT23 Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11604 Stücke - Preis und Lieferfrist anzeigen
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BAS21-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
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1N4151WS-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD323 Current - Reverse Leakage @ Vr: 50 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1875 Stücke - Preis und Lieferfrist anzeigen
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1N4151WS-E3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Supplier Device Package: SOD-323 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7699 Stücke - Preis und Lieferfrist anzeigen
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BAV99-G3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 70V 150MA SOT23 Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 150mA Diode Configuration: 1 Pair Series Connection Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11836 Stücke - Preis und Lieferfrist anzeigen
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1N4151WS-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD323 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4151WS-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD323 Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Supplier Device Package: SOD-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4150W-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9155 Stücke - Preis und Lieferfrist anzeigen
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1N4151W-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Current - Reverse Leakage @ Vr: 50nA @ 50V Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Package / Case: SOD-123 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4448W-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4448WS-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD323 Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Speed: Small Signal =< 200mA (Io), Any Speed |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MMBD7000-E3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4151W-E3-08 |
|
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Current - Reverse Leakage @ Vr: 50 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 50 V Supplier Device Package: SOD-123 Current - Average Rectified (Io): 150mA Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Reverse Recovery Time (trr): 4 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19113 Stücke - Preis und Lieferfrist anzeigen
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1N4448WS-E3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD323 Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Diode Type: Standard Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 150mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS16WS-G3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS19-G3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 100 V Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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BAS16WS-G3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 250MA SOD323 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Reverse Recovery Time (trr): 6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11272 Stücke - Preis und Lieferfrist anzeigen
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BAS19-G3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 200MA SOT23 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4150W-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4151W-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Package / Case: SOD-123 Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4448W-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4448WS-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD323 Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MMBD7000-HE3-18 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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1N4150W-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1934 Stücke - Preis und Lieferfrist anzeigen
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1N4151W-HE3-08 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Current - Reverse Leakage @ Vr: 50nA @ 50V Reverse Recovery Time (trr): 4ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Package / Case: SOD-123 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| VS-60APU02-N3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 60A TO247AC
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 60A TO247AC
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
| VS-STPS40L40CW-N3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V TO247AC
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 40V TO247AC
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| VS-30APF10-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 30A TO247
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 30APF10
auf Bestellung 330 Stücke Description: DIODE GEN PURP 1KV 30A TO247
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Current - Average Rectified (Io): 30A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 30APF10
Lieferzeit 21-28 Tag (e)
| VS-40EPS16-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.6KV 40A TO247AC
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
| VS-60EPS08-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tube
| VS-40EPF12-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 40A TO247AC
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 40A TO247AC
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 450ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
| VS-60EPS12-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 1.2KV 60A TO247AC
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 60EPS12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
auf Bestellung 207 Stücke Description: DIODE 1.2KV 60A TO247AC
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 60EPS12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
Lieferzeit 21-28 Tag (e)
| VS-60EPS16-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 60A TO247AC
Mounting Type: Through Hole
Base Part Number: 60EPS16
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 463 Stücke Description: DIODE GEN PURP 1.6KV 60A TO247AC
Mounting Type: Through Hole
Base Part Number: 60EPS16
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Package / Case: TO-247-2
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 60A
Current - Average Rectified (Io): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
| VS-80APS08-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 80A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 80APS08
auf Bestellung 1500 Stücke Description: DIODE GEN PURP 800V 80A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 800V
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 80APS08
Lieferzeit 21-28 Tag (e)
| VS-60APF12-M3 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 60A TO247AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
| VS-60EPF12-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.2KV 60A TO247AC
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC Modified
Current - Average Rectified (Io): 60A
Reverse Recovery Time (trr): 480 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
| VS-80APF12-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 80A TO247AC
Base Part Number: 80APF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 480ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
Current - Average Rectified (Io): 80A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 500 Stücke Description: DIODE GEN PURP 1.2KV 80A TO247AC
Base Part Number: 80APF12
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Reverse Recovery Time (trr): 480ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
Current - Average Rectified (Io): 80A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
| 1N4151TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA DO35
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA DO35
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
auf Bestellung 13059 Stücke - Preis und Lieferfrist anzeigen
| 1N4154TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 25V 150MA DO35
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 20000 Stücke Description: DIODE GEN PURP 25V 150MA DO35
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 12973 Stücke - Preis und Lieferfrist anzeigen
|
| 1N914TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
auf Bestellung 40000 Stücke Description: DIODE GEN PURP 100V 300MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 334 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4154TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 25V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke Description: DIODE GEN PURP 25V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Voltage - DC Reverse (Vr) (Max): 25 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 202042 Stücke - Preis und Lieferfrist anzeigen
|
| BAW76-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke Description: DIODE GEN PURP 50V 300MA DO35
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Box (TB)
Lieferzeit 21-28 Tag (e)
auf Bestellung 39602 Stücke - Preis und Lieferfrist anzeigen
| BAW76-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Base Part Number: BAW76
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 50000 Stücke Description: DIODE GEN PURP 50V 300MA DO35
Mounting Type: Through Hole
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Base Part Number: BAW76
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Lieferzeit 21-28 Tag (e)
auf Bestellung 58015 Stücke - Preis und Lieferfrist anzeigen
| 1N4148-P-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 2A DO35
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke Description: DIODE GEN PURP 75V 2A DO35
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8272 Stücke - Preis und Lieferfrist anzeigen
|
| BAV20-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA DO35
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
auf Bestellung 20000 Stücke Description: DIODE GEN PURP 150V 250MA DO35
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 2427 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4148-P-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 2A DO35
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
auf Bestellung 50000 Stücke Description: DIODE GEN PURP 75V 2A DO35
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 61958 Stücke - Preis und Lieferfrist anzeigen
|
| BAV20-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 250MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
| LL4448-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA SOD80
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 300MA SOD80
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| 1N4150TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 20000 Stücke Description: DIODE GEN PURP 50V 150MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Lieferzeit 21-28 Tag (e)
auf Bestellung 18002 Stücke - Preis und Lieferfrist anzeigen
|
| BAV21-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 20000 Stücke Description: DIODE GEN PURP 200V 250MA DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 13515 Stücke - Preis und Lieferfrist anzeigen
|
| LL4151-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
auf Bestellung 8277 Stücke - Preis und Lieferfrist anzeigen
| LL4148-M-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 300MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
auf Bestellung 5659 Stücke - Preis und Lieferfrist anzeigen
| LL4148-M-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA SOD80
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 300MA SOD80
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
auf Bestellung 16272 Stücke - Preis und Lieferfrist anzeigen
| BAW27-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Base Part Number: BAW27
auf Bestellung 10000 Stücke Description: DIODE GEN PURP 60V 600MA DO35
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 600mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 100nA @ 60V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Base Part Number: BAW27
Lieferzeit 21-28 Tag (e)
auf Bestellung 11834 Stücke - Preis und Lieferfrist anzeigen
| MMBD914-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6639 Stücke - Preis und Lieferfrist anzeigen
| BAV100-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 250MA SOD80
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
| BAV102-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 250MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| BAV200-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 250MA SOD80
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| BAV201-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
| BAV202-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 250MA SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
auf Bestellung 9290 Stücke - Preis und Lieferfrist anzeigen
| LL4150-M-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Average Rectified (Io): 600mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Current - Average Rectified (Io): 600mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
| MCL4151-TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA MICMELF
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 200mA
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 200MA MICMELF
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 200mA
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
| BAV200-GS08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 250MA SOD80
Supplier Device Package: SOD-80 QuadroMELF
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100nA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
| LL4150-M-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 600MA SOD80
Part Status: Active
Packaging: Tape & Reel (TR)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
| BAV301-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 250MA MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
auf Bestellung 5000 Stücke Description: DIODE GP 100V 250MA MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Lieferzeit 21-28 Tag (e)
auf Bestellung 34550 Stücke - Preis und Lieferfrist anzeigen
| BAV203-GS18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
| MMBD914-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
auf Bestellung 8910 Stücke - Preis und Lieferfrist anzeigen
| MMBD914-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
| MCL4448-TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA MICROMELF
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 75V 150MA MICROMELF
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 28161 Stücke - Preis und Lieferfrist anzeigen
| BAS16WS-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 8724 Stücke - Preis und Lieferfrist anzeigen
| BAS19-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| BAS20-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 200mA
auf Bestellung 10000 Stücke Description: DIODE GEN PURP 150V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 200mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 33528 Stücke - Preis und Lieferfrist anzeigen
|
| BAV99-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io) (per Diode): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 70V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io) (per Diode): 150mA
| BAS19-E3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 15219 Stücke - Preis und Lieferfrist anzeigen
| BAS20-E3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 200MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
| BAV302-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 250MA MICROMELF
Base Part Number: BAV302
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 150V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 2500 Stücke Description: DIODE GP 150V 250MA MICROMELF
Base Part Number: BAV302
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 150V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 15993 Stücke - Preis und Lieferfrist anzeigen
| BAS16-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BAS16
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BAS16
| BAL99-E3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 70V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
| BAV303-TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 250MA MICROMELF
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: MicroMELF
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 200V 250MA MICROMELF
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: MicroMELF
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 187 Stücke - Preis und Lieferfrist anzeigen
| BAV303-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 250MA MICROMELF
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 200V 250MA MICROMELF
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
auf Bestellung 298 Stücke - Preis und Lieferfrist anzeigen
| BAS16WS-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
| BAS19-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| BAS20-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
| BAV99-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 70V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
| BAS16WS-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 250MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
| BAS19-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| BAS20-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 22520 Stücke - Preis und Lieferfrist anzeigen
| BAV99-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 70V 150MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 13595 Stücke - Preis und Lieferfrist anzeigen
| 1N4148WS-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
auf Bestellung 13298 Stücke - Preis und Lieferfrist anzeigen
| BAS21-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| MMBD914-G3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
| MMBD914-G3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
| BAV300-TR3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 50V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 50V 250MA MICROMELF
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
| BAS16-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
| BAS16-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 10806 Stücke - Preis und Lieferfrist anzeigen
| IMBD4148-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOT23
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 14983 Stücke - Preis und Lieferfrist anzeigen
| 1N4148W-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD123
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
| 1N4148WS-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 60000 Stücke Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
|
| 1N4148W-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD123
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
| 1N4148WS-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 15550 Stücke - Preis und Lieferfrist anzeigen
| BAS21-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 200MA SOT23
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 200MA SOT23
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
auf Bestellung 11604 Stücke - Preis und Lieferfrist anzeigen
| BAS21-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
| 1N4151WS-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 1875 Stücke - Preis und Lieferfrist anzeigen
| 1N4151WS-E3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
auf Bestellung 7699 Stücke - Preis und Lieferfrist anzeigen
| BAV99-G3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 70V 150MA SOT23
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 11836 Stücke - Preis und Lieferfrist anzeigen
| 1N4151WS-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| 1N4151WS-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Supplier Device Package: SOD-323
| 1N4150W-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 200MA SOD123
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
auf Bestellung 9155 Stücke - Preis und Lieferfrist anzeigen
| 1N4151W-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
| 1N4448W-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
| 1N4448WS-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD323
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
| MMBD7000-E3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
| 1N4151W-E3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 ns
auf Bestellung 19113 Stücke - Preis und Lieferfrist anzeigen
| 1N4448WS-E3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Diode Type: Standard
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD323
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Diode Type: Standard
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
| BAS16WS-G3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
| BAS19-G3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
| BAS16WS-G3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 250MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 250MA SOD323
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
auf Bestellung 11272 Stücke - Preis und Lieferfrist anzeigen
| BAS19-G3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
| 1N4150W-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 200MA SOD123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
| 1N4151W-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD123
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| 1N4448W-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
| 1N4448WS-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 150MA SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
| MMBD7000-HE3-18 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
| 1N4150W-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
auf Bestellung 1934 Stücke - Preis und Lieferfrist anzeigen
| 1N4151W-HE3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA SOD123
Current - Reverse Leakage @ Vr: 50nA @ 50V
Reverse Recovery Time (trr): 4ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Package / Case: SOD-123
Mounting Type: Surface Mount
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