Die Produkte vishay general semiconductor - diodes division

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1N4760A-TAP 1N4760A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 68V 1.3W DO41
Package / Case: DO-204AL, DO-41, Axial
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Tolerance: ±5%
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Packaging: Cut Tape (CT)
auf Bestellung 1986 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 102500 Stücke - Preis und Lieferfrist anzeigen
31+ 0.86 EUR
38+ 0.69 EUR
100+ 0.37 EUR
500+ 0.24 EUR
1000+ 0.16 EUR
1N4761A-TR 1N4761A-TR 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 75V 1.3W DO41
Base Part Number: 1N4761
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Voltage - Zener (Nom) (Vz): 75V
Part Status: Active
Current - Reverse Leakage @ Vr: 5µA @ 56V
Impedance (Max) (Zzt): 175 Ohms
Power - Max: 1.3W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 75V 1.3W DO41
Voltage - Zener (Nom) (Vz): 75V
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N4761
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 56V
Part Status: Active
Impedance (Max) (Zzt): 175 Ohms
Power - Max: 1.3W
Tolerance: ±5%
auf Bestellung 19806 Stücke
Lieferzeit 21-28 Tag (e)
EGP10G-E3/53 EGP10G-E3/53 egp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Part Status: Active
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5059TAP 1N5059TAP 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5060TAP 1N5060TAP 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6956 Stücke - Preis und Lieferfrist anzeigen
BYG10Y-M3/TR3 BYG10Y-M3/TR3 BYG10D,G,J,K,M,Y.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.6KV 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGP10GHE3/53 EGP10GHE3/53 egp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG10Y-M3/TR BYG10Y-M3/TR BYG10D,G,J,K,M,Y.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.6KV 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
1N4001GPEHE3/91 1N4001GPEHE3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4002GPEHE3/91 1N4002GPEHE3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPEHE3/91 1N4004GPEHE3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPEHE3/93 1N4004GPEHE3/93 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPEHE3/91 1N4007GPEHE3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4934GPE-E3/91 1N4934GPE-E3/91 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4937GPE-E3/91 1N4937GPE-E3/91 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5061TAP 1N5061TAP 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5062TAP 1N5062TAP 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7376 Stücke - Preis und Lieferfrist anzeigen
BYW52-TAP BYW52-TAP byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW52-TR BYW52-TR byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20816 Stücke - Preis und Lieferfrist anzeigen
GP02-40HM3/73 GP02-40HM3/73 gp0220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP02-40HM3/54 GP02-40HM3/54 gp0220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22A-M3/TR3 BYG22A-M3/TR3 byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYG22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22B-M3/TR3 BYG22B-M3/TR3 byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22D-M3/TR3 BYG22D-M3/TR3 byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4002GPE-E3/91 1N4002GPE-E3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPE-E3/91 1N4004GPE-E3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPE-E3/93 1N4004GPE-E3/93 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPE-E3/91 1N4007GPE-E3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BA159GPEHE3/53 BA159GPEHE3/53 ba157gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4005GPEHE3/53 1N4005GPEHE3/53 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPEHE3/53 1N4007GPEHE3/53 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BA159GPE-E3/53 BA159GPE-E3/53 ba157gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO204AL
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX85C16-TAP BZX85C16-TAP bzx85.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 16V 1.3W DO41
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Power - Max: 1.3 W
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3840 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 16V 1.3W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 15 Ohms
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
auf Bestellung 24 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3840 Stücke - Preis und Lieferfrist anzeigen
BYT51D-TAP BYT51D-TAP byt51a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.5A SOD57
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: BYT51
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52A-TAP BYT52A-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 50V 1.4A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55000 Stücke - Preis und Lieferfrist anzeigen
BYT52B-TAP BYT52B-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 1.4A SOD57
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Reverse Recovery Time (trr): 200 ns
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26A-TAP BYV26A-TAP byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Packaging: Tape & Box (TB)
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6526 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.62 EUR
BYV37-TAP BYV37-TAP byv37.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 2A SOD57
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW54-TAP BYW54-TAP byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYT52A-TR BYT52A-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 50V 1.4A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52B-TR BYT52B-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26A-TR BYV26A-TR byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1A SOD57
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV37-TR BYV37-TR byv37.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 2A SOD57
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22B-M3/TR BYG22B-M3/TR byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22D-M3/TR BYG22D-M3/TR byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4934GPEHE3/91 1N4934GPEHE3/91 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4937GPEHE3/91 1N4937GPEHE3/91 1n4933gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Box (TB)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4003GPE-E3/53 1N4003GPE-E3/53 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPE-E3/53 1N4007GPE-E3/53 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP10-4003E-E3/53 GP10-4003E-E3/53 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52D-TAP BYT52D-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.4A SOD57
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT54D-TAP BYT54D-TAP byt54a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.25A SOD57
Current - Average Rectified (Io): 1.25A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYT54
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26B-TAP BYV26B-TAP byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1A SOD57
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 51443 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.65 EUR
BYW55-TAP BYW55-TAP byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 2A SOD57
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 309 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.66 EUR
BYT52D-TR BYT52D-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW55-TR BYW55-TR byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 2A SOD57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S5MHE3_A/H S5MHE3_A/H s5a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 5A DO214AB
Base Part Number: S5M
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BY268TAP BY268TAP by268.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.4KV 800MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY448TAP BY448TAP by448.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.5KV 2A SOD57
Base Part Number: BY448
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 3µA @ 1200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1500V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYT52G-TAP BYT52G-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV38-TAP BYV38-TAP byv37.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYW56-TAP BYW56-TAP byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 2A SOD57
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BY268TR BY268TR by268.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.4KV 800MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
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5000+ 0.67 EUR
BYT52G-TR BYT52G-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1.4A SOD57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3A-M3/9AT ES3A-M3/9AT es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 3A DO214AB
Base Part Number: ES3A
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3B-M3/9AT ES3B-M3/9AT es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3D-M3/9AT ES3D-M3/9AT es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3A-M3/57T ES3A-M3/57T es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 3A DO214AB
Base Part Number: ES3A
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3B-M3/57T ES3B-M3/57T es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO214AB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3D-M3/57T ES3D-M3/57T es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT51K-TAP BYT51K-TAP byt51a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.5A SOD57
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 4µs
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52J-TAP BYT52J-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.4A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV15-TAP BYV15-TAP byv12.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.5A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26D-TAP BYV26D-TAP byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
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5000+ 0.7 EUR
BYT51K-TR BYT51K-TR byt51a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.5A SOD57
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52J-TR BYT52J-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYV15-TR BYV15-TR byv12.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.5A SOD57
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26D-TR BYV26D-TR byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
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5000+ 0.7 EUR
BYT52K-TAP BYT52K-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.4A SOD57
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT53D-TAP BYT53D-TAP byt53.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.9A SOD57
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 1.9A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Base Part Number: BYT53
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYV27-050-TAP BYV27-050-TAP byv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 55V 2A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 55 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW36-TAP BYW36-TAP byw32.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
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Lieferzeit 21-28 Tag (e)
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BYT52K-TR BYT52K-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.4A SOD57
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV16-TR BYV16-TR byv12.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: BYV16
auf Bestellung 25000 Stücke
Lieferzeit 21-28 Tag (e)
BYV27-050-TR BYV27-050-TR byv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 55V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 55 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Packaging: Tape & Reel (TR)
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3G-M3/9AT ES3G-M3/9AT es3f.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES3G
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3G-M3/57T ES3G-M3/57T es3f.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES3G
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52M-TAP BYT52M-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4098 Stücke - Preis und Lieferfrist anzeigen
GP02-40-E3/53 GP02-40-E3/53 gp0220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP02-40HE3/53 GP02-40HE3/53 gp0220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Diode Type: Standard
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY203-12STAP BY203-12STAP by20312s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCH 1.2KV 250MA SOD57
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY269TAP BY269TAP by268.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.6KV 2A SOD57
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 908 Stücke - Preis und Lieferfrist anzeigen
BYV27-150-TAP BYV27-150-TAP byv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 165V 2A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2820 Stücke - Preis und Lieferfrist anzeigen
BY203-12STR BY203-12STR by20312s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCH 1.2KV 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA (DC)
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV27-150-TR BYV27-150-TR byv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 165V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24802 Stücke - Preis und Lieferfrist anzeigen
ZM4746A-GS18 ZM4746A-GS18 zm4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 1W DO213AB
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Power - Max: 1 W
Part Status: Active
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4958 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 1W DO213AB
Power - Max: 1 W
Part Status: Active
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
auf Bestellung 9970 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4958 Stücke - Preis und Lieferfrist anzeigen
ZM4728A-GS08 ZM4728A-GS08 zm4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.31V 1W DO213AB
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.31 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1272 Stücke - Preis und Lieferfrist anzeigen
1N4760A-TAP 1n4728a.pdf
1N4760A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1.3W DO41
Package / Case: DO-204AL, DO-41, Axial
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Tolerance: ±5%
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Packaging: Cut Tape (CT)
auf Bestellung 1986 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 102500 Stücke - Preis und Lieferfrist anzeigen
31+ 0.86 EUR
38+ 0.69 EUR
100+ 0.37 EUR
500+ 0.24 EUR
1000+ 0.16 EUR
1N4761A-TR 1n4728a.pdf
1N4761A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.3W DO41
Base Part Number: 1N4761
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Voltage - Zener (Nom) (Vz): 75V
Part Status: Active
Current - Reverse Leakage @ Vr: 5µA @ 56V
Impedance (Max) (Zzt): 175 Ohms
Power - Max: 1.3W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19806 Stücke - Preis und Lieferfrist anzeigen
1N4761A-TR 1n4728a.pdf
1N4761A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.3W DO41
Voltage - Zener (Nom) (Vz): 75V
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N4761
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 56V
Part Status: Active
Impedance (Max) (Zzt): 175 Ohms
Power - Max: 1.3W
Tolerance: ±5%
auf Bestellung 19806 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
EGP10G-E3/53 egp10a.pdf
EGP10G-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Part Status: Active
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5059TAP 1n5059.pdf
1N5059TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5060TAP 1n5059.pdf
1N5060TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6956 Stücke - Preis und Lieferfrist anzeigen
BYG10Y-M3/TR3 BYG10D,G,J,K,M,Y.pdf
BYG10Y-M3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGP10GHE3/53 egp10a.pdf
EGP10GHE3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG10Y-M3/TR BYG10D,G,J,K,M,Y.pdf
BYG10Y-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
1N4001GPEHE3/91 1n4001gp.pdf
1N4001GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4002GPEHE3/91 1n4001gp.pdf
1N4002GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPEHE3/91 1n4001gp.pdf
1N4004GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPEHE3/93 1n4001gp.pdf
1N4004GPEHE3/93
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPEHE3/91 1n4001gp.pdf
1N4007GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4934GPE-E3/91 1n4933gp.pdf
1N4934GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4937GPE-E3/91 1n4933gp.pdf
1N4937GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5061TAP 1n5059.pdf
1N5061TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5062TAP 1n5059.pdf
1N5062TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7376 Stücke - Preis und Lieferfrist anzeigen
BYW52-TAP byw52.pdf
BYW52-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW52-TR byw52.pdf
BYW52-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20816 Stücke - Preis und Lieferfrist anzeigen
GP02-40HM3/73 gp0220.pdf
GP02-40HM3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP02-40HM3/54 gp0220.pdf
GP02-40HM3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22A-M3/TR3 byg22a.pdf
BYG22A-M3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYG22
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22B-M3/TR3 byg22a.pdf
BYG22B-M3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22D-M3/TR3 byg22a.pdf
BYG22D-M3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4002GPE-E3/91 1n4001gp.pdf
1N4002GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPE-E3/91 1n4001gp.pdf
1N4004GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004GPE-E3/93 1n4001gp.pdf
1N4004GPE-E3/93
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPE-E3/91 1n4001gp.pdf
1N4007GPE-E3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BA159GPEHE3/53 ba157gp.pdf
BA159GPEHE3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4005GPEHE3/53 1n4001gp.pdf
1N4005GPEHE3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Packaging: Tape & Box (TB)
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPEHE3/53 1n4001gp.pdf
1N4007GPEHE3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Reverse Recovery Time (trr): 2 µs
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BA159GPE-E3/53 ba157gp.pdf
BA159GPE-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX85C16-TAP техническая информация bzx85.pdf
BZX85C16-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.3W DO41
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Power - Max: 1.3 W
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3864 Stücke - Preis und Lieferfrist anzeigen
BZX85C16-TAP техническая информация bzx85.pdf
BZX85C16-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.3W DO41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 15 Ohms
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
auf Bestellung 24 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3840 Stücke - Preis und Lieferfrist anzeigen
BYT51D-TAP byt51a.pdf
BYT51D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A SOD57
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: BYT51
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52A-TAP byt52.pdf
BYT52A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1.4A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55000 Stücke - Preis und Lieferfrist anzeigen
BYT52B-TAP byt52.pdf
BYT52B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1.4A SOD57
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Reverse Recovery Time (trr): 200 ns
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26A-TAP byv26.pdf
BYV26A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Packaging: Tape & Box (TB)
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6526 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.62 EUR
BYV37-TAP byv37.pdf
BYV37-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW54-TAP byw52.pdf
BYW54-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
BYT52A-TR byt52.pdf
BYT52A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1.4A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52B-TR byt52.pdf
BYT52B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26A-TR byv26.pdf
BYV26A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV37-TR byv37.pdf
BYV37-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22B-M3/TR byg22a.pdf
BYG22B-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22D-M3/TR byg22a.pdf
BYG22D-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4934GPEHE3/91 1n4933gp.pdf
1N4934GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4937GPEHE3/91 1n4933gp.pdf
1N4937GPEHE3/91
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Box (TB)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4003GPE-E3/53 1n4001gp.pdf
1N4003GPE-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4007GPE-E3/53 1n4001gp.pdf
1N4007GPE-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP10-4003E-E3/53
GP10-4003E-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52D-TAP byt52.pdf
BYT52D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.4A SOD57
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT54D-TAP byt54a.pdf
BYT54D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.25A SOD57
Current - Average Rectified (Io): 1.25A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYT54
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26B-TAP byv26.pdf
BYV26B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 51443 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.65 EUR
BYW55-TAP byw52.pdf
BYW55-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 309 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.66 EUR
BYT52D-TR byt52.pdf
BYT52D-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW55-TR byw52.pdf
BYW55-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S5MHE3_A/H s5a.pdf
S5MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 5A DO214AB
Base Part Number: S5M
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 676 Stücke - Preis und Lieferfrist anzeigen
BY268TAP by268.pdf
BY268TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 800MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY448TAP by448.pdf
BY448TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.5KV 2A SOD57
Base Part Number: BY448
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 3µA @ 1200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1500V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 110000 Stücke - Preis und Lieferfrist anzeigen
BYT52G-TAP byt52.pdf
BYT52G-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV38-TAP byv37.pdf
BYV38-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 77369 Stücke - Preis und Lieferfrist anzeigen
BYW56-TAP byw52.pdf
BYW56-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7640 Stücke - Preis und Lieferfrist anzeigen
BY268TR by268.pdf
BY268TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 800MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 65000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.67 EUR
BYT52G-TR byt52.pdf
BYT52G-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.4A SOD57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3A-M3/9AT es3.pdf
ES3A-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Base Part Number: ES3A
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3B-M3/9AT es3.pdf
ES3B-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3D-M3/9AT es3.pdf
ES3D-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3A-M3/57T es3.pdf
ES3A-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Base Part Number: ES3A
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3B-M3/57T es3.pdf
ES3B-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3D-M3/57T es3.pdf
ES3D-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT51K-TAP byt51a.pdf
BYT51K-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 4µs
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52J-TAP byt52.pdf
BYT52J-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV15-TAP byv12.pdf
BYV15-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 300ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26D-TAP byv26.pdf
BYV26D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
auf Bestellung 5000 Stücke
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auf Bestellung 592 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.7 EUR
BYT51K-TR byt51a.pdf
BYT51K-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Current - Reverse Leakage @ Vr: 1µA @ 800V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52J-TR byt52.pdf
BYT52J-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYV15-TR byv12.pdf
BYV15-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26D-TR byv26.pdf
BYV26D-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
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Lieferzeit 21-28 Tag (e)
auf Bestellung 15185 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.7 EUR
BYT52K-TAP byt52.pdf
BYT52K-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A SOD57
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT53D-TAP byt53.pdf
BYT53D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.9A SOD57
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 1.9A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Base Part Number: BYT53
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYV27-050-TAP byv27.pdf
BYV27-050-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 55V 2A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 55 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYW36-TAP byw32.pdf
BYW36-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
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BYT52K-TR byt52.pdf
BYT52K-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A SOD57
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV16-TR byv12.pdf
BYV16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A SOD57
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: BYV16
auf Bestellung 25000 Stücke
Lieferzeit 21-28 Tag (e)
BYV27-050-TR byv27.pdf
BYV27-050-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 55V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 55 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Packaging: Tape & Reel (TR)
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3G-M3/9AT es3f.pdf
ES3G-M3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES3G
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES3G-M3/57T es3f.pdf
ES3G-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES3G
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT52M-TAP byt52.pdf
BYT52M-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GP02-40-E3/53 gp0220.pdf
GP02-40-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GP02-40HE3/53 gp0220.pdf
GP02-40HE3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Diode Type: Standard
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY203-12STAP by20312s.pdf
BY203-12STAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCH 1.2KV 250MA SOD57
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY269TAP by268.pdf
BY269TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 2A SOD57
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYV27-150-TAP byv27.pdf
BYV27-150-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BY203-12STR by20312s.pdf
BY203-12STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCH 1.2KV 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA (DC)
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV27-150-TR byv27.pdf
BYV27-150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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ZM4746A-GS18 zm4728a.pdf
ZM4746A-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1W DO213AB
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Power - Max: 1 W
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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ZM4746A-GS18 zm4728a.pdf
ZM4746A-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1W DO213AB
Power - Max: 1 W
Part Status: Active
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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ZM4728A-GS08 zm4728a.pdf
ZM4728A-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.31V 1W DO213AB
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.31 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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