Die Produkte vishay general semiconductor - diodes division
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
[ Nächste Seite >> ]
Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung |
Informationen zu Lagerverfügbarkeit und Lieferzeiten |
Preis ohne MwSt |
||
---|---|---|---|---|---|---|---|---|
![]() |
ES3GHE3_A/H |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
ES3GHE3_A/I |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AB Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MURS320HE3_A/I |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A DO214AB Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 4A Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
2KBP04M-M4/51 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 2A KBPM Packaging: Tray Supplier Device Package: KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Part Status: Obsolete |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
2KBP06M-M4/51 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2A KBPM Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Technology: Standard Supplier Device Package: KBPM Operating Temperature: -55°C ~ 165°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Packaging: Tray Current - Average Rectified (Io): 2 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
2KBP08M-M4/51 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2A KBPM Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: KBPM Technology: Standard Diode Type: Single Phase Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Packaging: Tray Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
2KBP10M-M4/51 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Package / Case: 4-SIP, KBPM Packaging: Tray Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Supplier Device Package: KBPM Technology: Standard Operating Temperature: -55°C ~ 165°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
3N257-M4/51 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2A KBPM Operating Temperature: -55°C ~ 165°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 600V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Average Rectified (Io): 2A Voltage - Peak Reverse (Max): 600V Technology: Standard Diode Type: Single Phase Part Status: Obsolete Packaging: Tray Base Part Number: 3N257 Manufacturer: Vishay General Semiconductor - Diodes Division Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
3N258-M4/51 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2A KBPM Base Part Number: 3N258 Supplier Device Package: KBPM Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Operating Temperature: -55°C ~ 165°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Packaging: Tray Manufacturer: Vishay General Semiconductor - Diodes Division Voltage - Peak Reverse (Max): 800V Technology: Standard Diode Type: Single Phase Part Status: Obsolete |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
|
1N5627GP-E3/73 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO201AD Current - Reverse Leakage @ Vr: 200µA @ 800V Reverse Recovery Time (trr): 3µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Obsolete Packaging: Tape & Box (TB) Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
|
1N5406GP-E3/54 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 30pF @ 4V, 1MHz |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
|
1N5407GP-E3/54 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO201AD Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
|
1N5407GP-E3/73 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO201AD Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5625-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 1 µA @ 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Reverse Recovery Time (trr): 7.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5417-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Current - Reverse Leakage @ Vr: 1µA @ 200V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: 1N5417 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56A-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 3A SOD64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 3A SOD64 Base Part Number: BYT56 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56A-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 3A SOD64 Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5µA @ 50V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Avalanche |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56B-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 3A SOD64 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 100V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5417TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -55°C ~ 175°C Base Part Number: 1N5417 Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 200V Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56D-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56D-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5418-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Base Part Number: 1N5418 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Avalanche Part Status: Active Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 200V Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BY228-13TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Part Status: Active Operating Temperature - Junction: 140°C (Max) Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 2 µs Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYM36C-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56G-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYW72-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BY228-13TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Package / Case: SOD-64, Axial Packaging: Tape & Reel (TR) Mounting Type: Through Hole Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56G-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYW82-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Base Part Number: BYW82 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 1µA @ 200V Reverse Recovery Time (trr): 7.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYM36D-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2.9A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Average Rectified (Io): 2.9A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56J-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 100ns |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56J-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYW83-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 3A SOD64 Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Base Part Number: BYW83 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BY228-15TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1.2KV 3A SOD64 Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BY228TAP |
![]() ![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1.5KV 3A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1500 V Part Status: Active Operating Temperature - Junction: 140°C (Max) Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 20 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56K-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Part Status: Active Packaging: Tape & Box (TB) Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 800V Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BY228-15TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1.2KV 3A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Reverse Recovery Time (trr): 2 µs Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 5000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
BYT56K-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 800V Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT56M-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYT78-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 3A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 10000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
BYW172D-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Base Part Number: BYW172 Operating Temperature - Junction: -55°C ~ 175°C Current - Reverse Leakage @ Vr: 1µA @ 200V Reverse Recovery Time (trr): 100ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Avalanche Part Status: Active Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYW76TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYW178-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Mounting Type: Through Hole Package / Case: SOD-64, Axial Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
SL44HE3_A/I |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 4A DO214AB Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 4A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
|
BY228GP-E3/73 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.5KV 2.5A DO201 Current - Reverse Leakage @ Vr: 5 µA @ 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 1500 V Part Status: Active Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYV28-050-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 3.5A SOD64 Packaging: Tape & Box (TB) Part Status: Active Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 50V Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYV28-050-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 50V 3.5A SOD64 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 50V Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BYV28-100-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 3.5A SOD64 Package / Case: SOD-64, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 100V Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Average Rectified (Io): 3.5A Voltage - DC Reverse (Vr) (Max): 100V Packaging: Tape & Box (TB) Part Status: Active Diode Type: Avalanche Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-64 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 10000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
BYV28-100-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 3.5A SOD64 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 100V Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
BZT55C8V2-GS08 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW SOD80 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-80 QuadroMELF Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: SOD-80 Variant Tolerance: ±5% |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5225B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW DO35 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 29 Ohms Voltage - Zener (Nom) (Vz): 3 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Current - Reverse Leakage @ Vr: 50 µA @ 1 V Tolerance: ±5% Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 20000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
1N5226B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 500MW DO35 Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Tolerance: ±5% Current - Reverse Leakage @ Vr: 25 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 28 Ohms |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 17780 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
1N5227B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 500MW DO35 Impedance (Max) (Zzt): 24 Ohms Voltage - Zener (Nom) (Vz): 3.6 V Mounting Type: Through Hole Operating Temperature: 175°C Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 15 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5228B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 500MW DO35 Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Packaging: Tape & Box (TB) Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 10000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
1N5229B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 500MW DO35 Impedance (Max) (Zzt): 22 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Part Status: Active Packaging: Tape & Box (TB) Power - Max: 500 mW Supplier Device Package: DO-35 (DO-204AH) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 10000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
1N5230B-TAP |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 500MW DO35 Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 19 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: 175°C Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 20000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
1N5231C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35 Current - Reverse Leakage @ Vr: 5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 17 Ohms Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.1 V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Box (TB) Tolerance: ±2% |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5234C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO35 Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Current - Reverse Leakage @ Vr: 5 µA @ 4 V Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5235C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO35 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-35 (DO-204AH) Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.8 V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5236C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35 Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Current - Reverse Leakage @ Vr: 3 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: 175°C Mounting Type: Through Hole Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5239C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW DO35 Current - Reverse Leakage @ Vr: 3 µA @ 7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5240C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 500MW DO35 Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 8 V Voltage - Zener (Nom) (Vz): 10 V Operating Temperature: 175°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5242C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW DO35 Part Status: Active Packaging: Tape & Box (TB) Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 1µA @ 9.1V Impedance (Max) (Zzt): 30 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 12V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5247C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 17V 500MW DO35 Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 13V Impedance (Max) (Zzt): 19 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 17V Part Status: Active Base Part Number: 1N5247 Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5248C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO35 Tolerance: ±2% Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Packaging: Tape & Box (TB) Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 21 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5252C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO35 Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 33 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Current - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5254C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 21V Impedance (Max) (Zzt): 41 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 27V Part Status: Active Supplier Device Package: DO-35 (DO-204AH) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5255C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 28V 500MW DO35 Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Power - Max: 500mW Tolerance: ±2% Part Status: Active Voltage - Zener (Nom) (Vz): 28V Packaging: Tape & Box (TB) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 21V Impedance (Max) (Zzt): 44 Ohms |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5258C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW DO35 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 70 Ohms Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Box (TB) Voltage - Zener (Nom) (Vz): 36 V Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5260C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 43V 500MW DO35 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 33V Impedance (Max) (Zzt): 93 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 43V Part Status: Active Packaging: Tape & Box (TB) Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5261C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 47V 500MW DO35 Mounting Type: Through Hole Packaging: Tape & Box (TB) Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 36V Impedance (Max) (Zzt): 105 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 47V Part Status: Active Base Part Number: 1N5261 Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5267C-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 1.7A 75V DO35 Packaging: Tape & Box (TB) Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 56V Impedance (Max) (Zzt): 270 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 75V Part Status: Active Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5227B-TR |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
1N5231C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 17 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5234C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 500MW DO35 Current - Reverse Leakage @ Vr: 5 µA @ 4 V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 7 Ohms Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.2 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5235C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5236C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 500MW DO35 Tolerance: ±2% Packaging: Tape & Reel (TR) Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Current - Reverse Leakage @ Vr: 3 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5239C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 500MW DO35 Current - Reverse Leakage @ Vr: 3 µA @ 7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5240C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 500MW DO35 Impedance (Max) (Zzt): 17 Ohms Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Voltage - Zener (Nom) (Vz): 10 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Current - Reverse Leakage @ Vr: 3 µA @ 8 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5242C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW DO35 Tolerance: ±2% Voltage - Zener (Nom) (Vz): 12V Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 1µA @ 9.1V Impedance (Max) (Zzt): 30 Ohms Power - Max: 500mW |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5247C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 17V 500MW DO35 Base Part Number: 1N5247 Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 13V Impedance (Max) (Zzt): 19 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 17V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5248C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO35 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 21 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5252C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW DO35 Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 33 Ohms Voltage - Zener (Nom) (Vz): 24 V Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5254C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW DO35 Supplier Device Package: DO-35 (DO-204AH) Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 21V Impedance (Max) (Zzt): 41 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 27V Part Status: Active Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5255C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 28V 500MW DO35 Voltage - Zener (Nom) (Vz): 28V Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 21V Impedance (Max) (Zzt): 44 Ohms Power - Max: 500mW Tolerance: ±2% |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5258C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW DO35 Current - Reverse Leakage @ Vr: 100 nA @ 27 V Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 70 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5260C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 43V 500MW DO35 Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 33V Impedance (Max) (Zzt): 93 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 43V Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5261C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 47V 500MW DO35 Base Part Number: 1N5261 Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 36V Impedance (Max) (Zzt): 105 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 47V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
1N5267C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 1.7A 75V DO35 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 75V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 270 Ohms Current - Reverse Leakage @ Vr: 100nA @ 56V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
||||
![]() |
MMBZ5225B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 225MW SOT23-3 Base Part Number: MMBZ5225 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 50µA @ 1V Impedance (Max) (Zzt): 30 Ohms Power - Max: 225mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 3V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5229B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Power - Max: 225mW Tolerance: ±5% Base Part Number: MMBZ5229 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 5µA @ 1V Impedance (Max) (Zzt): 22 Ohms Voltage - Zener (Nom) (Vz): 4.3V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5230B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 225MW SOT23-3 Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 4.7V Tolerance: ±5% Power - Max: 225mW Impedance (Max) (Zzt): 19 Ohms Current - Reverse Leakage @ Vr: 5µA @ 2V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MMBZ5230 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5231B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOT-23-3 Part Status: Last Time Buy Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5233B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6V 225MW SOT23-3 Base Part Number: MMBZ5233 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 5µA @ 3.5V Impedance (Max) (Zzt): 7 Ohms Power - Max: 225mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 6V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5234B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.2V 225MW SOT23-3 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 5µA @ 4V Impedance (Max) (Zzt): 7 Ohms Power - Max: 225mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 6.2V Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: MMBZ5234 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5236B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: SOT-23-3 Part Status: Last Time Buy Power - Max: 225 mW Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5242B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 225MW SOT23-3 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5% Power - Max: 225mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 1µA @ 9.1V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MMBZ52 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5245B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 225MW SOT23-3 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 11 V Power - Max: 225 mW Part Status: Last Time Buy Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|||
![]() |
MMBZ5257B-E3-18 |
![]() |
Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 225MW SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Current - Reverse Leakage @ Vr: 100nA @ 25V Impedance (Max) (Zzt): 58 Ohms Power - Max: 225mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 33V Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: MMBZ52 Supplier Device Package: SOT-23-3 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
ES3GHE3_A/H |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 1475 Stücke - Preis und Lieferfrist anzeigen
ES3GHE3_A/I |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 3A DO214AB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
MURS320HE3_A/I |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 4A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
2KBP04M-M4/51 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Supplier Device Package: KBPM
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tray
Supplier Device Package: KBPM
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Part Status: Obsolete
2KBP06M-M4/51 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Technology: Standard
Supplier Device Package: KBPM
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Current - Average Rectified (Io): 2 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 2A KBPM
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Technology: Standard
Supplier Device Package: KBPM
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Current - Average Rectified (Io): 2 A
2KBP08M-M4/51 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 2A KBPM
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
2KBP10M-M4/51 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Package / Case: 4-SIP, KBPM
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1KV 2A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Package / Case: 4-SIP, KBPM
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 165°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
3N257-M4/51 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A KBPM
Operating Temperature: -55°C ~ 165°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Tray
Base Part Number: 3N257
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 2A KBPM
Operating Temperature: -55°C ~ 165°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Tray
Base Part Number: 3N257
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
3N258-M4/51 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Base Part Number: 3N258
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 165°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Packaging: Tray
Manufacturer: Vishay General Semiconductor - Diodes Division
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 800V 2A KBPM
Base Part Number: 3N258
Supplier Device Package: KBPM
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 165°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Packaging: Tray
Manufacturer: Vishay General Semiconductor - Diodes Division
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
1N5627GP-E3/73 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Current - Reverse Leakage @ Vr: 200µA @ 800V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 3A DO201AD
Current - Reverse Leakage @ Vr: 200µA @ 800V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Box (TB)
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
1N5406GP-E3/54 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 3A DO201AD
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
1N5407GP-E3/54 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
1N5407GP-E3/73 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
1N5625-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
1N5417-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5417
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5417
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
BYT56A-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 50V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
BYT56B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3A SOD64
Base Part Number: BYT56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 100V 3A SOD64
Base Part Number: BYT56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
BYT56A-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3A SOD64
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 50V 3A SOD64
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
BYT56B-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 100V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
1N5417TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 1N5417
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 1N5417
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
BYT56D-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
BYT56D-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
1N5418-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Base Part Number: 1N5418
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 3A SOD64
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Base Part Number: 1N5418
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
BY228-13TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Part Status: Active
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 2 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1KV 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Part Status: Active
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 2 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
BYM36C-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 3A SOD64
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
BYT56G-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
BYW72-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1144 Stücke - Preis und Lieferfrist anzeigen
BY228-13TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1KV 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
BYT56G-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 3A SOD64
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
BYW82-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Base Part Number: BYW82
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 7.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Base Part Number: BYW82
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 7.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 9125 Stücke - Preis und Lieferfrist anzeigen
BYM36D-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.9A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Average Rectified (Io): 2.9A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 800V 2.9A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Average Rectified (Io): 2.9A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
BYT56J-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 100ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 3A SOD64
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 100ns
BYT56J-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 3A SOD64
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
BYW83-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: BYW83
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 3A SOD64
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: BYW83
BY228-15TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.2KV 3A SOD64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1.2KV 3A SOD64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
BY228TAP | ![]() |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.5KV 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Part Status: Active
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1.5KV 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Part Status: Active
Operating Temperature - Junction: 140°C (Max)
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
auf Bestellung 861 Stücke - Preis und Lieferfrist anzeigen
BYT56K-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Part Status: Active
Packaging: Tape & Box (TB)
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 800V 3A SOD64
Part Status: Active
Packaging: Tape & Box (TB)
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
BY228-15TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.2KV 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Reverse Recovery Time (trr): 2 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: DIODE AVALANCHE 1.2KV 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Reverse Recovery Time (trr): 2 µs
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 5455 Stücke - Preis und Lieferfrist anzeigen
|
BYT56K-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
BYT56M-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 597 Stücke - Preis und Lieferfrist anzeigen
BYT78-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
auf Bestellung 10000 Stücke Description: DIODE AVALANCHE 1KV 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)

Lieferzeit 21-28 Tag (e)
auf Bestellung 2849 Stücke - Preis und Lieferfrist anzeigen
|
BYW172D-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Base Part Number: BYW172
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 200V 3A SOD64
Base Part Number: BYW172
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
BYW76TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Box (TB)
auf Bestellung 2174 Stücke - Preis und Lieferfrist anzeigen
BYW178-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 800V 3A SOD64
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 477 Stücke - Preis und Lieferfrist anzeigen
SL44HE3_A/I |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AB
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 4A DO214AB
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
BY228GP-E3/73 |
![]() |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 2.5A DO201
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Part Status: Active
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.5KV 2.5A DO201
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Part Status: Active
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
BYV28-050-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
BYV28-050-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
BYV28-100-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3.5A SOD64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 100V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 100V
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Avalanche
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
auf Bestellung 10000 Stücke Description: DIODE AVALANCHE 100V 3.5A SOD64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 100V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Average Rectified (Io): 3.5A
Voltage - DC Reverse (Vr) (Max): 100V
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Avalanche
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64

Lieferzeit 21-28 Tag (e)
auf Bestellung 11226 Stücke - Preis und Lieferfrist anzeigen
BYV28-100-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
BZT55C8V2-GS08 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 8.2V 500MW SOD80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
auf Bestellung 24768 Stücke - Preis und Lieferfrist anzeigen
1N5225B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Tolerance: ±5%
Packaging: Tape & Box (TB)
auf Bestellung 20000 Stücke Description: DIODE ZENER 3V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Tolerance: ±5%
Packaging: Tape & Box (TB)

Lieferzeit 21-28 Tag (e)
auf Bestellung 9608 Stücke - Preis und Lieferfrist anzeigen
|
1N5226B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO35
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 28 Ohms
auf Bestellung 17780 Stücke Description: DIODE ZENER 3.3V 500MW DO35
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 28 Ohms

Lieferzeit 21-28 Tag (e)
auf Bestellung 132 Stücke - Preis und Lieferfrist anzeigen
|
1N5227B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO35
Impedance (Max) (Zzt): 24 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Mounting Type: Through Hole
Operating Temperature: 175°C
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.6V 500MW DO35
Impedance (Max) (Zzt): 24 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Mounting Type: Through Hole
Operating Temperature: 175°C
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 7581 Stücke - Preis und Lieferfrist anzeigen
1N5228B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Packaging: Tape & Box (TB)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
auf Bestellung 10000 Stücke Description: DIODE ZENER 3.9V 500MW DO35
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Packaging: Tape & Box (TB)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%

Lieferzeit 21-28 Tag (e)
auf Bestellung 9753 Stücke - Preis und Lieferfrist anzeigen
|
1N5229B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Packaging: Tape & Box (TB)
Power - Max: 500 mW
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 10000 Stücke Description: DIODE ZENER 4.3V 500MW DO35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Packaging: Tape & Box (TB)
Power - Max: 500 mW
Supplier Device Package: DO-35 (DO-204AH)

Lieferzeit 21-28 Tag (e)
auf Bestellung 9346 Stücke - Preis und Lieferfrist anzeigen
|
1N5230B-TAP |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 175°C
Mounting Type: Through Hole
auf Bestellung 20000 Stücke Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 175°C
Mounting Type: Through Hole

Lieferzeit 21-28 Tag (e)
auf Bestellung 8685 Stücke - Preis und Lieferfrist anzeigen
|
1N5231C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 17 Ohms
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Tolerance: ±2%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 17 Ohms
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Tolerance: ±2%
1N5234C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO35
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.2V 500MW DO35
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
1N5235C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.8V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
1N5236C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
1N5239C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 9.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
1N5240C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 500MW DO35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 175°C
1N5242C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO35
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Impedance (Max) (Zzt): 30 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 500MW DO35
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Impedance (Max) (Zzt): 30 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 12V
1N5247C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 13V
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 17V
Part Status: Active
Base Part Number: 1N5247
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 17V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 13V
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 17V
Part Status: Active
Base Part Number: 1N5247
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
1N5248C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO35
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Packaging: Tape & Box (TB)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW DO35
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Packaging: Tape & Box (TB)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
1N5252C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO35
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 24V 500MW DO35
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Packaging: Tape & Box (TB)
1N5254C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 41 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 27V
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 41 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 27V
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
1N5255C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW DO35
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Power - Max: 500mW
Tolerance: ±2%
Part Status: Active
Voltage - Zener (Nom) (Vz): 28V
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 44 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 28V 500MW DO35
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Power - Max: 500mW
Tolerance: ±2%
Part Status: Active
Voltage - Zener (Nom) (Vz): 28V
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 44 Ohms
1N5258C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 70 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Voltage - Zener (Nom) (Vz): 36 V
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 36V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 70 Ohms
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Box (TB)
Voltage - Zener (Nom) (Vz): 36 V
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
1N5260C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW DO35
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 33V
Impedance (Max) (Zzt): 93 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 43V
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 43V 500MW DO35
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 33V
Impedance (Max) (Zzt): 93 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 43V
Part Status: Active
Packaging: Tape & Box (TB)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
1N5261C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW DO35
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 36V
Impedance (Max) (Zzt): 105 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 47V
Part Status: Active
Base Part Number: 1N5261
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 47V 500MW DO35
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 36V
Impedance (Max) (Zzt): 105 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 47V
Part Status: Active
Base Part Number: 1N5261
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
1N5267C-TAP |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 1.7A 75V DO35
Packaging: Tape & Box (TB)
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 56V
Impedance (Max) (Zzt): 270 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 75V
Part Status: Active
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 1.7A 75V DO35
Packaging: Tape & Box (TB)
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 56V
Impedance (Max) (Zzt): 270 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 75V
Part Status: Active
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
1N5227B-TR |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
1N5231C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.1V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
1N5234C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 7 Ohms
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 7 Ohms
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
1N5235C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
1N5236C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
1N5239C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 9.1V 500MW DO35
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
1N5240C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 500MW DO35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
1N5242C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Impedance (Max) (Zzt): 30 Ohms
Power - Max: 500mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 500MW DO35
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Impedance (Max) (Zzt): 30 Ohms
Power - Max: 500mW
1N5247C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW DO35
Base Part Number: 1N5247
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 13V
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 17V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 17V 500MW DO35
Base Part Number: 1N5247
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 13V
Impedance (Max) (Zzt): 19 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 17V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
1N5248C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
1N5252C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 24V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 33 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
1N5254C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 41 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 27V
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 27V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 41 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 27V
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
1N5255C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 28V 500MW DO35
Voltage - Zener (Nom) (Vz): 28V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 44 Ohms
Power - Max: 500mW
Tolerance: ±2%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 28V 500MW DO35
Voltage - Zener (Nom) (Vz): 28V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 44 Ohms
Power - Max: 500mW
Tolerance: ±2%
1N5258C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 36V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
1N5260C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 33V
Impedance (Max) (Zzt): 93 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 43V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 43V 500MW DO35
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 33V
Impedance (Max) (Zzt): 93 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 43V
Part Status: Active
Packaging: Tape & Reel (TR)
1N5261C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW DO35
Base Part Number: 1N5261
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 36V
Impedance (Max) (Zzt): 105 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 47V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 47V 500MW DO35
Base Part Number: 1N5261
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 36V
Impedance (Max) (Zzt): 105 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 47V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
1N5267C-TR |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 1.7A 75V DO35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 270 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 1.7A 75V DO35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 270 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
MMBZ5225B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Base Part Number: MMBZ5225
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 30 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3V 225MW SOT23-3
Base Part Number: MMBZ5225
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 30 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
MMBZ5229B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Power - Max: 225mW
Tolerance: ±5%
Base Part Number: MMBZ5229
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5µA @ 1V
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 4.3V 225MW SOT23-3
Power - Max: 225mW
Tolerance: ±5%
Base Part Number: MMBZ5229
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5µA @ 1V
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
MMBZ5230B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 19 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5230
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 4.7V 225MW SOT23-3
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 19 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5230
MMBZ5231B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.1V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
MMBZ5233B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6V 225MW SOT23-3
Base Part Number: MMBZ5233
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Impedance (Max) (Zzt): 7 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 6V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6V 225MW SOT23-3
Base Part Number: MMBZ5233
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Impedance (Max) (Zzt): 7 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 6V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
MMBZ5234B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 225MW SOT23-3
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5µA @ 4V
Impedance (Max) (Zzt): 7 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 6.2V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: MMBZ5234
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.2V 225MW SOT23-3
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5µA @ 4V
Impedance (Max) (Zzt): 7 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 6.2V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: MMBZ5234
MMBZ5236B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 7.5V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
MMBZ5242B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ52
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ52
MMBZ5245B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 225 mW
Part Status: Last Time Buy
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 15V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 225 mW
Part Status: Last Time Buy
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
MMBZ5257B-E3-18 |
![]() |

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 225MW SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100nA @ 25V
Impedance (Max) (Zzt): 58 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: MMBZ52
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 33V 225MW SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100nA @ 25V
Impedance (Max) (Zzt): 58 Ohms
Power - Max: 225mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 33V
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: MMBZ52
Supplier Device Package: SOT-23-3
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
[ Nächste Seite >> ]