Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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ILD620GB | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILD620GB-X009T | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ILD621GB | VISHAY |
![]() Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: DIP8 Number of channels: 2 Mounting: THT Type of optocoupler: optocoupler Kind of output: transistor Turn-off time: 2.3µs Turn-on time: 3µs CTR@If: 100%@60mA Collector-emitter voltage: 70V Insulation voltage: 5.3kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2754 Stücke: Lieferzeit 7-14 Tag (e) |
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ILD74 | VISHAY |
![]() Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 20V Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 35%@16mA Collector-emitter voltage: 20V Case: DIP8 Turn-on time: 3µs Turn-off time: 3µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ1 | VISHAY |
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auf Bestellung 321 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ2-X009 | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Case: Gull wing 16 Collector-emitter voltage: 70V CTR@If: 50-100%@10mA Insulation voltage: 4.42kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ30 | VISHAY |
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auf Bestellung 661 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ615-1 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ615-1X009 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ615-2 | VISHAY |
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auf Bestellung 1090 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ615-2X007 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ615-3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ615-3X009 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ615-4 | VISHAY |
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auf Bestellung 1571 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ615-4X009 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ615-4X009T | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ620-X009T | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ620GB-X009 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ620GB-X009T | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ILQ621 | VISHAY |
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auf Bestellung 806 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ621GB | VISHAY |
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auf Bestellung 630 Stücke: Lieferzeit 7-14 Tag (e) |
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ILQ621GB-X009 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IMBD4148-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 0.5A Case: SOT23 Capacitance: 4pF Reverse recovery time: 4ns Leakage current: 50µA Load current: 0.15A Power dissipation: 0.35W Max. forward impulse current: 0.5A Max. forward voltage: 1V Max. off-state voltage: 100V Quantity in set/package: 3000pcs. Kind of package: 7 inch reel Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Type of diode: switching Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2920 Stücke: Lieferzeit 7-14 Tag (e) |
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IMBD4148-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 0.5A Case: SOT23 Capacitance: 4pF Reverse recovery time: 4ns Leakage current: 50µA Load current: 0.15A Power dissipation: 0.35W Max. forward impulse current: 0.5A Max. forward voltage: 1V Max. off-state voltage: 100V Quantity in set/package: 3000pcs. Kind of package: 7 inch reel Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Type of diode: switching Mounting: SMD Anzahl je Verpackung: 5 Stücke |
auf Bestellung 8310 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF510PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 784 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF510SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 621 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF510STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF510STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF520PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2256 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF530PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3326 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF530SPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Kind of package: tube Case: D2PAK; TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 26nC Drain current: 10A On-state resistance: 0.16Ω Power dissipation: 88W Pulsed drain current: 56A Gate-source voltage: ±20V Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 492 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF530STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF540PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF540SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF540STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF540STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF610PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 36W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 704 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF610SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF610STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF610STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF614PBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF614SPBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF620PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement Gate charge: 14nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 662 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF620SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 14nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF620STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 14nC Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF620STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 14nC Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF624PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB Mounting: THT Case: TO220AB Polarisation: unipolar Gate charge: 14nC On-state resistance: 1.1Ω Drain current: 4.4A Pulsed drain current: 14A Gate-source voltage: ±20V Power dissipation: 50W Drain-source voltage: 250V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF624SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W Mounting: SMD Case: D2PAK; TO263 Polarisation: unipolar Gate charge: 14nC On-state resistance: 1.1Ω Drain current: 4.4A Pulsed drain current: 14A Gate-source voltage: ±20V Power dissipation: 50W Drain-source voltage: 250V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF630PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Kind of channel: enhancement Gate charge: 43nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 417 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF630SPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 188 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF630STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF630STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF634PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 101 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF634STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF640PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2646 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF640PBF-BE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 112 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF640SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1230 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF640STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF640STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF644PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 671 Stücke: Lieferzeit 7-14 Tag (e) |
|
ILD620GB |
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Hersteller: VISHAY
ILD620GB Optocouplers - analog output
ILD620GB Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILD620GB-X009T |
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Hersteller: VISHAY
ILD620GB-X009T Optocouplers - analog output
ILD620GB-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILD621GB |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: DIP8
Number of channels: 2
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
CTR@If: 100%@60mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: DIP8
Number of channels: 2
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
CTR@If: 100%@60mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2754 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
62+ | 1.16 EUR |
139+ | 0.51 EUR |
147+ | 0.49 EUR |
ILD74 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 20V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 35%@16mA
Collector-emitter voltage: 20V
Case: DIP8
Turn-on time: 3µs
Turn-off time: 3µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 20V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 35%@16mA
Collector-emitter voltage: 20V
Case: DIP8
Turn-on time: 3µs
Turn-off time: 3µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
5+ | 14.3 EUR |
24+ | 2.97 EUR |
65+ | 1.1 EUR |
500+ | 0.65 EUR |
ILQ1 |
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Hersteller: VISHAY
ILQ1 Optocouplers - analog output
ILQ1 Optocouplers - analog output
auf Bestellung 321 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
ILQ2-X009 |
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Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Case: Gull wing 16
Collector-emitter voltage: 70V
CTR@If: 50-100%@10mA
Insulation voltage: 4.42kV
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Case: Gull wing 16
Collector-emitter voltage: 70V
CTR@If: 50-100%@10mA
Insulation voltage: 4.42kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
10+ | 7.15 EUR |
15+ | 4.76 EUR |
41+ | 1.74 EUR |
ILQ30 |
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Hersteller: VISHAY
ILQ30 Optocouplers - analog output
ILQ30 Optocouplers - analog output
auf Bestellung 661 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.35 EUR |
42+ | 1.72 EUR |
45+ | 1.62 EUR |
ILQ615-1 |
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Hersteller: VISHAY
ILQ615-1 Optocouplers - analog output
ILQ615-1 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ615-1X009 |
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Hersteller: VISHAY
ILQ615-1X009 Optocouplers - analog output
ILQ615-1X009 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ615-2 |
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Hersteller: VISHAY
ILQ615-2 Optocouplers - analog output
ILQ615-2 Optocouplers - analog output
auf Bestellung 1090 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
ILQ615-2X007 |
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Hersteller: VISHAY
ILQ615-2X007 Optocouplers - analog output
ILQ615-2X007 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ615-3 |
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Hersteller: VISHAY
ILQ615-3 Optocouplers - analog output
ILQ615-3 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ615-3X009 |
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Hersteller: VISHAY
ILQ615-3X009 Optocouplers - analog output
ILQ615-3X009 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ615-4 |
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Hersteller: VISHAY
ILQ615-4 Optocouplers - analog output
ILQ615-4 Optocouplers - analog output
auf Bestellung 1571 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
64+ | 1.12 EUR |
68+ | 1.06 EUR |
ILQ615-4X009 |
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Hersteller: VISHAY
ILQ615-4X009 Optocouplers - analog output
ILQ615-4X009 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ615-4X009T |
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Hersteller: VISHAY
ILQ615-4X009T Optocouplers - analog output
ILQ615-4X009T Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ620-X009T |
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Hersteller: VISHAY
ILQ620-X009T Optocouplers - analog output
ILQ620-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ620GB-X009 |
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Hersteller: VISHAY
ILQ620GB-X009 Optocouplers - analog output
ILQ620GB-X009 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ620GB-X009T |
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Hersteller: VISHAY
ILQ620GB-X009T Optocouplers - analog output
ILQ620GB-X009T Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ILQ621 |
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Hersteller: VISHAY
ILQ621 Optocouplers - analog output
ILQ621 Optocouplers - analog output
auf Bestellung 806 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.13 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
ILQ621GB |
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Hersteller: VISHAY
ILQ621GB Optocouplers - analog output
ILQ621GB Optocouplers - analog output
auf Bestellung 630 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
ILQ621GB-X009 |
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Hersteller: VISHAY
ILQ621GB-X009 Optocouplers - analog output
ILQ621GB-X009 Optocouplers - analog output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IMBD4148-E3-08 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 0.5A
Case: SOT23
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Load current: 0.15A
Power dissipation: 0.35W
Max. forward impulse current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 100V
Quantity in set/package: 3000pcs.
Kind of package: 7 inch reel
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Type of diode: switching
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 0.5A
Case: SOT23
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Load current: 0.15A
Power dissipation: 0.35W
Max. forward impulse current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 100V
Quantity in set/package: 3000pcs.
Kind of package: 7 inch reel
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Type of diode: switching
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2920 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
538+ | 0.13 EUR |
802+ | 0.089 EUR |
1171+ | 0.061 EUR |
1498+ | 0.048 EUR |
1832+ | 0.039 EUR |
2591+ | 0.028 EUR |
2660+ | 0.027 EUR |
IMBD4148-HE3-08 |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 0.5A
Case: SOT23
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Load current: 0.15A
Power dissipation: 0.35W
Max. forward impulse current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 100V
Quantity in set/package: 3000pcs.
Kind of package: 7 inch reel
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Type of diode: switching
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1V; Ifsm: 0.5A
Case: SOT23
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Load current: 0.15A
Power dissipation: 0.35W
Max. forward impulse current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 100V
Quantity in set/package: 3000pcs.
Kind of package: 7 inch reel
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Type of diode: switching
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8310 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1025+ | 0.07 EUR |
1140+ | 0.063 EUR |
1420+ | 0.05 EUR |
1505+ | 0.048 EUR |
12000+ | 0.047 EUR |
IRF510PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 784 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
108+ | 0.67 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
IRF510SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 621 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
79+ | 0.91 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
1000+ | 0.51 EUR |
IRF510STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF510STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF520PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2256 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
84+ | 0.86 EUR |
95+ | 0.76 EUR |
152+ | 0.47 EUR |
161+ | 0.44 EUR |
IRF530PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3326 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
105+ | 0.69 EUR |
113+ | 0.63 EUR |
178+ | 0.4 EUR |
188+ | 0.38 EUR |
IRF530SPBF | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Kind of package: tube
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
Drain current: 10A
On-state resistance: 0.16Ω
Power dissipation: 88W
Pulsed drain current: 56A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Kind of package: tube
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
Drain current: 10A
On-state resistance: 0.16Ω
Power dissipation: 88W
Pulsed drain current: 56A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
IRF530STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF540PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF540SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF540STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF540STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF610PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 704 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
212+ | 0.34 EUR |
225+ | 0.32 EUR |
IRF610SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF610STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF610STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.3A
Pulsed drain current: 10A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF614PBF |
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Hersteller: VISHAY
IRF614PBF THT N channel transistors
IRF614PBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF614SPBF |
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Hersteller: VISHAY
IRF614SPBF SMD N channel transistors
IRF614SPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF620PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 662 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
74+ | 0.97 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
5000+ | 0.5 EUR |
IRF620SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF620STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF620STRRPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14nC
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF624PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Pulsed drain current: 14A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Pulsed drain current: 14A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF624SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Pulsed drain current: 14A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W
Mounting: SMD
Case: D2PAK; TO263
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Pulsed drain current: 14A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 417 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
143+ | 0.5 EUR |
152+ | 0.47 EUR |
IRF630SPBF | ![]() |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 188 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
98+ | 0.74 EUR |
103+ | 0.69 EUR |
1000+ | 0.67 EUR |
IRF630STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF630STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF634PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 101 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
81+ | 0.88 EUR |
101+ | 0.72 EUR |
IRF634STRRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF640PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2646 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
38+ | 1.93 EUR |
114+ | 0.63 EUR |
120+ | 0.6 EUR |
IRF640PBF-BE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.14 EUR |
48+ | 1.5 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
IRF640SPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1230 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.35 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
IRF640STRLPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF640STRRPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF644PBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 671 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
51+ | 1.42 EUR |
100+ | 0.72 EUR |
107+ | 0.67 EUR |