Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFIZ14GPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFIZ24GPBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFIZ34GPBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFIZ44GPBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFIZ48GPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 631 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL014TRPBF | VISHAY |
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auf Bestellung 3122 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL014TRPBF-BE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFL110TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.96A Pulsed drain current: 12A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2399 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL210TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Pulsed drain current: 7.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8.2nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 312 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL210TRPBF-BE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFL214TRPBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFL9014TRPBF | VISHAY |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223 Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -14A Drain current: -1.1A Gate charge: 12nC On-state resistance: 0.5Ω Power dissipation: 3.1W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3646 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL9014TRPBF-BE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFL9110TRPBF | VISHAY |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.69A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1251 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFL9110TRPBF-BE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.69A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFP048PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 290A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFP048RPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 290A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 447 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP054PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP064PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP140PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC Mounting: THT Polarisation: unipolar Gate charge: 72nC On-state resistance: 77mΩ Drain current: 22A Gate-source voltage: ±20V Power dissipation: 180W Drain-source voltage: 100V Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247AC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP150PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 761 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP17N50LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 64A Power dissipation: 220W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFP21N60LPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFP22N50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP22N60KPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFP23N50LPBF | VISHAY |
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auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP240PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1669 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP244PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 314 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 439 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP254PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 92A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 407 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP260PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP264PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP26N60LPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFP27N60KPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 500W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP31N50LPBF | VISHAY |
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auf Bestellung 671 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP32N50KPBF | VISHAY |
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auf Bestellung 612 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP340PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.9A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.9A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP350LCPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFP350PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP360LCPBF | VISHAY |
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auf Bestellung 589 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP360PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 14A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP440PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.6A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 72 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP448PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 180W; TO247AC Mounting: THT Type of transistor: N-MOSFET Case: TO247AC Kind of package: tube Polarisation: unipolar Gate charge: 84nC On-state resistance: 0.6Ω Drain current: 11A Gate-source voltage: ±20V Pulsed drain current: 44A Drain-source voltage: 500V Power dissipation: 180W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFP450APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC Type of transistor: N-MOSFET Kind of package: tube Gate charge: 64nC Power dissipation: 190W On-state resistance: 0.4Ω Drain current: 8.7A Gate-source voltage: ±30V Drain-source voltage: 500V Polarisation: unipolar Case: TO247AC Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 544 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP450LCPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.6A; 190W; TO247AC Type of transistor: N-MOSFET Kind of package: tube Gate charge: 74nC Power dissipation: 190W On-state resistance: 0.4Ω Drain current: 8.6A Gate-source voltage: ±30V Drain-source voltage: 500V Polarisation: unipolar Case: TO247AC Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP450PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC Type of transistor: N-MOSFET Kind of package: tube Gate charge: 150nC Power dissipation: 190W On-state resistance: 0.4Ω Drain current: 8.7A Gate-source voltage: ±20V Drain-source voltage: 500V Polarisation: unipolar Case: TO247AC Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 959 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 335 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460BPBF | VISHAY |
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auf Bestellung 816 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460LCPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP460PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRFP9140PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Case: TO247AC Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Gate charge: 61nC On-state resistance: 0.2Ω Power dissipation: 180W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 149 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP9240PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1271 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPC40PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.3A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPC50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 244 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPC50LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFPC50PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO247AC Polarisation: unipolar Gate charge: 0.14µC On-state resistance: 0.6Ω Drain current: 7A Gate-source voltage: ±20V Power dissipation: 180W Drain-source voltage: 600V Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 284 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPC60LCPBF | VISHAY |
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auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPC60PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 280W; TO247AC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO247AC Polarisation: unipolar Gate charge: 0.21µC On-state resistance: 0.4Ω Drain current: 10A Gate-source voltage: ±20V Power dissipation: 280W Drain-source voltage: 600V Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 314 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFPE30PBF | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFPE40PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.4A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIZ14GPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFIZ24GPBF |
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Hersteller: VISHAY
IRFIZ24GPBF THT N channel transistors
IRFIZ24GPBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFIZ34GPBF |
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Hersteller: VISHAY
IRFIZ34GPBF THT N channel transistors
IRFIZ34GPBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFIZ44GPBF |
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Hersteller: VISHAY
IRFIZ44GPBF THT N channel transistors
IRFIZ44GPBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFIZ48GPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 631 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
40+ | 1.82 EUR |
41+ | 1.76 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
IRFL014TRPBF |
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Hersteller: VISHAY
IRFL014TRPBF SMD N channel transistors
IRFL014TRPBF SMD N channel transistors
auf Bestellung 3122 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.11 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
10000+ | 0.29 EUR |
IRFL014TRPBF-BE3 |
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Hersteller: VISHAY
IRFL014TRPBF-BE3 SMD N channel transistors
IRFL014TRPBF-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFL110TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2399 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
104+ | 0.69 EUR |
117+ | 0.61 EUR |
233+ | 0.31 EUR |
247+ | 0.29 EUR |
IRFL210TRPBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.2nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; Idm: 7.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Pulsed drain current: 7.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.2nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 312 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
87+ | 0.83 EUR |
148+ | 0.49 EUR |
156+ | 0.46 EUR |
IRFL210TRPBF-BE3 |
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Hersteller: VISHAY
IRFL210TRPBF-BE3 SMD N channel transistors
IRFL210TRPBF-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFL214TRPBF |
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Hersteller: VISHAY
IRFL214TRPBF SMD N channel transistors
IRFL214TRPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFL9014TRPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -14A
Drain current: -1.1A
Gate charge: 12nC
On-state resistance: 0.5Ω
Power dissipation: 3.1W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -14A
Drain current: -1.1A
Gate charge: 12nC
On-state resistance: 0.5Ω
Power dissipation: 3.1W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3646 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
99+ | 0.73 EUR |
253+ | 0.28 EUR |
268+ | 0.27 EUR |
IRFL9014TRPBF-BE3 |
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Hersteller: VISHAY
IRFL9014TRPBF-BE3 SMD P channel transistors
IRFL9014TRPBF-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFL9110TRPBF | ![]() |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1251 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
83+ | 0.87 EUR |
89+ | 0.81 EUR |
108+ | 0.67 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
IRFL9110TRPBF-BE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.69A; Idm: -8.8A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.69A
Pulsed drain current: -8.8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP048PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP048RPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 447 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.13 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
IRFP054PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.06 EUR |
23+ | 3.1 EUR |
IRFP064PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
24+ | 2.99 EUR |
26+ | 2.82 EUR |
IRFP140PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Mounting: THT
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 77mΩ
Drain current: 22A
Gate-source voltage: ±20V
Power dissipation: 180W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 180W; TO247AC
Mounting: THT
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 77mΩ
Drain current: 22A
Gate-source voltage: ±20V
Power dissipation: 180W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.79 EUR |
29+ | 2.52 EUR |
31+ | 2.33 EUR |
57+ | 1.27 EUR |
60+ | 1.2 EUR |
IRFP150PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 761 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.22 EUR |
20+ | 3.62 EUR |
22+ | 3.3 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
IRFP17N50LPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP21N60LPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP22N50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.02 EUR |
25+ | 2.89 EUR |
27+ | 2.73 EUR |
IRFP22N60KPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP23N50LPBF | ![]() |
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Hersteller: VISHAY
IRFP23N50LPBF THT N channel transistors
IRFP23N50LPBF THT N channel transistors
auf Bestellung 465 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.02 EUR |
20+ | 3.63 EUR |
21+ | 3.43 EUR |
IRFP240PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1669 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.53 EUR |
31+ | 2.32 EUR |
33+ | 2.23 EUR |
55+ | 1.3 EUR |
58+ | 1.24 EUR |
IRFP244PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 314 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.26 EUR |
26+ | 2.77 EUR |
28+ | 2.57 EUR |
50+ | 1.46 EUR |
53+ | 1.37 EUR |
IRFP250PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.19 EUR |
25+ | 2.96 EUR |
26+ | 2.83 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
IRFP254PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 407 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.89 EUR |
35+ | 2.04 EUR |
38+ | 1.93 EUR |
IRFP260PBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
23+ | 3.17 EUR |
24+ | 3 EUR |
500+ | 2.87 EUR |
IRFP264PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.32 EUR |
25+ | 2.86 EUR |
27+ | 2.7 EUR |
IRFP26N60LPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP27N60KPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
4+ | 17.88 EUR |
10+ | 7.15 EUR |
IRFP31N50LPBF |
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Hersteller: VISHAY
IRFP31N50LPBF THT N channel transistors
IRFP31N50LPBF THT N channel transistors
auf Bestellung 671 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.26 EUR |
16+ | 4.49 EUR |
IRFP32N50KPBF |
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Hersteller: VISHAY
IRFP32N50KPBF THT N channel transistors
IRFP32N50KPBF THT N channel transistors
auf Bestellung 612 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.65 EUR |
15+ | 4.78 EUR |
IRFP340PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.9A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.9A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.9A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.9A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.5 EUR |
40+ | 1.82 EUR |
42+ | 1.72 EUR |
IRFP350LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP350PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.8 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
IRFP360LCPBF |
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Hersteller: VISHAY
IRFP360LCPBF THT N channel transistors
IRFP360LCPBF THT N channel transistors
auf Bestellung 589 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
27+ | 2.75 EUR |
28+ | 2.6 EUR |
IRFP360PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 14A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 14A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.21 EUR |
27+ | 2.66 EUR |
29+ | 2.52 EUR |
IRFP440PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.6A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.6A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.55 EUR |
22+ | 3.32 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
IRFP448PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 180W; TO247AC
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Gate charge: 84nC
On-state resistance: 0.6Ω
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 44A
Drain-source voltage: 500V
Power dissipation: 180W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 180W; TO247AC
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Gate charge: 84nC
On-state resistance: 0.6Ω
Drain current: 11A
Gate-source voltage: ±20V
Pulsed drain current: 44A
Drain-source voltage: 500V
Power dissipation: 180W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP450APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 64nC
Power dissipation: 190W
On-state resistance: 0.4Ω
Drain current: 8.7A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 64nC
Power dissipation: 190W
On-state resistance: 0.4Ω
Drain current: 8.7A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 544 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.49 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
IRFP450LCPBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.6A; 190W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 74nC
Power dissipation: 190W
On-state resistance: 0.4Ω
Drain current: 8.6A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.6A; 190W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 74nC
Power dissipation: 190W
On-state resistance: 0.4Ω
Drain current: 8.6A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.98 EUR |
39+ | 1.87 EUR |
41+ | 1.76 EUR |
IRFP450PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 150nC
Power dissipation: 190W
On-state resistance: 0.4Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 150nC
Power dissipation: 190W
On-state resistance: 0.4Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 959 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.49 EUR |
25+ | 2.87 EUR |
30+ | 2.39 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
100+ | 1.53 EUR |
IRFP460APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 335 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
26+ | 2.8 EUR |
28+ | 2.65 EUR |
IRFP460BPBF |
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Hersteller: VISHAY
IRFP460BPBF THT N channel transistors
IRFP460BPBF THT N channel transistors
auf Bestellung 816 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.5 EUR |
31+ | 2.36 EUR |
33+ | 2.22 EUR |
IRFP460LCPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.51 EUR |
25+ | 2.86 EUR |
27+ | 2.7 EUR |
IRFP460PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP9140PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO247AC
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Gate charge: 61nC
On-state resistance: 0.2Ω
Power dissipation: 180W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO247AC
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Gate charge: 61nC
On-state resistance: 0.2Ω
Power dissipation: 180W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.88 EUR |
23+ | 3.19 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
IRFP9240PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1271 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
IRFPC40PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.3A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.3A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.3A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.59 EUR |
19+ | 3.92 EUR |
40+ | 1.79 EUR |
IRFPC50APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 244 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.9 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
IRFPC50LCPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFPC50PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.6Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 180W
Drain-source voltage: 600V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 180W; TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.6Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 180W
Drain-source voltage: 600V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.59 EUR |
31+ | 2.33 EUR |
33+ | 2.2 EUR |
IRFPC60LCPBF |
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Hersteller: VISHAY
IRFPC60LCPBF THT N channel transistors
IRFPC60LCPBF THT N channel transistors
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.32 EUR |
21+ | 3.52 EUR |
22+ | 3.33 EUR |
IRFPC60PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 280W; TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Polarisation: unipolar
Gate charge: 0.21µC
On-state resistance: 0.4Ω
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 280W
Drain-source voltage: 600V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 280W; TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Polarisation: unipolar
Gate charge: 0.21µC
On-state resistance: 0.4Ω
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 280W
Drain-source voltage: 600V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 314 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.01 EUR |
22+ | 3.29 EUR |
24+ | 3.1 EUR |
IRFPE30PBF |
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Hersteller: VISHAY
IRFPE30PBF THT N channel transistors
IRFPE30PBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFPE40PBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.4A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.4A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.09 EUR |
30+ | 2.39 EUR |
32+ | 2.26 EUR |