Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SS5P4-M3/86A | VISHAY |
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auf Bestellung 938 Stücke: Lieferzeit 7-14 Tag (e) |
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SS5P5-M3/86A | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SS5P6-M3/86A | VISHAY |
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auf Bestellung 1478 Stücke: Lieferzeit 7-14 Tag (e) |
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SS5P6HM3-A/H | VISHAY | SS5P6HM3-A/H SMD Schottky diodes |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
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SS8P4C-M3/86A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 40V; 4Ax2; 1500pcs. Type of diode: Schottky rectifying Case: SMPC; TO277A Max. off-state voltage: 40V Max. load current: 8A Max. forward voltage: 0.42V Load current: 4A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A Kind of package: 7 inch reel Quantity in set/package: 1500pcs. Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SS8PH10-M3/86A | VISHAY |
![]() Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 8A; 1500pcs. Type of diode: Schottky rectifying Case: SMPC; TO277A Capacitance: 140pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 150A Kind of package: 7 inch reel Quantity in set/package: 1500pcs. Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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SS8PH10HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 8A; 1500pcs. Type of diode: Schottky rectifying Case: SMPC; TO277A Capacitance: 140pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 150A Application: automotive industry Kind of package: 7 inch reel Quantity in set/package: 1500pcs. Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SSA24-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.36V Max. forward impulse current: 60A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1158 Stücke: Lieferzeit 7-14 Tag (e) |
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SSA33L-E3/5AT | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SSA33L-E3/61T | VISHAY |
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auf Bestellung 1978 Stücke: Lieferzeit 7-14 Tag (e) |
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SSA34-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Max. off-state voltage: 40V Max. forward voltage: 0.42V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 75A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 909 Stücke: Lieferzeit 7-14 Tag (e) |
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SSA34HE3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Max. off-state voltage: 40V Max. forward voltage: 0.49V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 75A Application: automotive industry Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SSB43L-E3/52T | VISHAY |
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auf Bestellung 577 Stücke: Lieferzeit 7-14 Tag (e) |
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SSB43LHE3-A/H | VISHAY | SSB43LHE3-A/H SMD Schottky diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SSB44-E3/52T | VISHAY |
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auf Bestellung 2126 Stücke: Lieferzeit 7-14 Tag (e) |
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SSC53L-E3/57T | VISHAY |
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auf Bestellung 1212 Stücke: Lieferzeit 7-14 Tag (e) |
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SSC53L-E3/9AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 13 inch reel Max. off-state voltage: 30V Max. forward voltage: 0.38V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 175A Kind of package: 13 inch reel Type of diode: Schottky rectifying Quantity in set/package: 3500pcs. Mounting: SMD Case: SMC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2984 Stücke: Lieferzeit 7-14 Tag (e) |
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SSC54-E3/57T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 7 inch reel; 850pcs. Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.42V Max. forward impulse current: 175A Kind of package: 7 inch reel Quantity in set/package: 850pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2124 Stücke: Lieferzeit 7-14 Tag (e) |
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SSC54-E3/9AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 13 inch reel Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.42V Max. forward impulse current: 175A Kind of package: 13 inch reel Quantity in set/package: 3500pcs. Leakage current: 60mA Anzahl je Verpackung: 3500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SSC54HE3-A/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 13 inch reel Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.49V Max. forward impulse current: 175A Kind of package: 13 inch reel Application: automotive industry Quantity in set/package: 3500pcs. Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD08P06-155L-GE3 | VISHAY |
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auf Bestellung 1267 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD09P10-195-BE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD09P10-195-GE3 | VISHAY |
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auf Bestellung 1980 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD15N15-95-E3 | VISHAY |
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auf Bestellung 1975 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD19N20-90-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SUD19P06-60-E3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD19P06-60-GE3 | VISHAY |
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auf Bestellung 1535 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD19P06-60L-E3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD20N10-66L-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16.9A Pulsed drain current: 25A Power dissipation: 41.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SUD23N06-31-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 17.1A; 31.25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17.1A Power dissipation: 31.25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1750 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD25N15-52-E3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD35N10-26P-BE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD35N10-26P-E3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD35N10-26P-GE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD40151EL-GE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD40N08-16-E3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SUD40N10-25-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 40A; Idm: 70A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 70A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SUD50N03-06AP-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 100A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SUD50N04-8M8P-4GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 100A; 30.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Pulsed drain current: 100A Power dissipation: 30.8W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2211 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD50N06-09L-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 50A; 136W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD50P04-08-GE3 | VISHAY |
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auf Bestellung 1624 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD50P04-09L-E3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SUD50P06-15-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 113W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Drain-source voltage: -60V Drain current: -50A On-state resistance: 28mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2527 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD50P06-15L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 136W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Drain-source voltage: -60V Drain current: -50A On-state resistance: 30mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 331 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD50P08-25L-E3 | VISHAY |
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auf Bestellung 727 Stücke: Lieferzeit 7-14 Tag (e) |
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SUD50P10-43L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W Drain-source voltage: -100V Drain current: -37.1A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 95W Polarisation: unipolar Kind of package: reel; tape Gate charge: 160nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: DPAK; TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SUD50P10-43L-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W Drain-source voltage: -100V Drain current: -36.4A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 72.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 160nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: DPAK; TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SUD70090E-GE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD80460E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A Case: TO252 Drain-source voltage: 150V Drain current: 42A On-state resistance: 44.7mΩ Type of transistor: N-MOSFET Power dissipation: 65.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUD90330E-GE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUG80050E-GE3 | VISHAY |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SUG90090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 300A Power dissipation: 395W Case: TO247 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: THT Gate charge: 129nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SUM10250E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 36.6A; 125W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 36.6A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 57.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 673 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110N10-09-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P04-04L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -110A; Idm: -240A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -110A Pulsed drain current: -240A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 0.35µC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SUM110P04-05-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -33A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -33A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 280nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 715 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P06-07L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -110A; Idm: -240A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -110A Pulsed drain current: -240A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 13.8mΩ Mounting: SMD Gate charge: 345nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 965 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P06-08L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -110A; Idm: -200A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -110A Pulsed drain current: -200A Power dissipation: 272W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 240nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1839 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P08-11L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -110A; Idm: -120A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -110A Pulsed drain current: -120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 11.2mΩ Mounting: SMD Gate charge: 0.27µC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 678 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM40010EL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A Case: TO263 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 230nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SS5P4-M3/86A |
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Hersteller: VISHAY
SS5P4-M3/86A SMD Schottky diodes
SS5P4-M3/86A SMD Schottky diodes
auf Bestellung 938 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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89+ | 0.81 EUR |
226+ | 0.32 EUR |
239+ | 0.30 EUR |
SS5P5-M3/86A |
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Hersteller: VISHAY
SS5P5-M3/86A SMD Schottky diodes
SS5P5-M3/86A SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS5P6-M3/86A |
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Hersteller: VISHAY
SS5P6-M3/86A SMD Schottky diodes
SS5P6-M3/86A SMD Schottky diodes
auf Bestellung 1478 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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92+ | 0.79 EUR |
217+ | 0.33 EUR |
230+ | 0.31 EUR |
1000+ | 0.30 EUR |
SS5P6HM3-A/H |
Hersteller: VISHAY
SS5P6HM3-A/H SMD Schottky diodes
SS5P6HM3-A/H SMD Schottky diodes
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.20 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
SS8P4C-M3/86A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 40V; 4Ax2; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Max. off-state voltage: 40V
Max. load current: 8A
Max. forward voltage: 0.42V
Load current: 4A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 40V; 4Ax2; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Max. off-state voltage: 40V
Max. load current: 8A
Max. forward voltage: 0.42V
Load current: 4A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS8PH10-M3/86A |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 8A; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Capacitance: 140pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 8A; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Capacitance: 140pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
169+ | 0.42 EUR |
194+ | 0.37 EUR |
225+ | 0.32 EUR |
237+ | 0.30 EUR |
500+ | 0.29 EUR |
SS8PH10HM3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 8A; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Capacitance: 140pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Application: automotive industry
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 8A; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Capacitance: 140pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Application: automotive industry
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSA24-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.36V
Max. forward impulse current: 60A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.36V
Max. forward impulse current: 60A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1158 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
216+ | 0.33 EUR |
428+ | 0.17 EUR |
453+ | 0.16 EUR |
500+ | 0.15 EUR |
SSA33L-E3/5AT |
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Hersteller: VISHAY
SSA33L-E3/5AT SMD Schottky diodes
SSA33L-E3/5AT SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSA33L-E3/61T |
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Hersteller: VISHAY
SSA33L-E3/61T SMD Schottky diodes
SSA33L-E3/61T SMD Schottky diodes
auf Bestellung 1978 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
165+ | 0.43 EUR |
391+ | 0.18 EUR |
414+ | 0.17 EUR |
SSA34-E3/61T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.42V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.42V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 909 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
280+ | 0.26 EUR |
376+ | 0.19 EUR |
569+ | 0.13 EUR |
596+ | 0.12 EUR |
SSA34HE3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Application: automotive industry
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Application: automotive industry
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSB43L-E3/52T |
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Hersteller: VISHAY
SSB43L-E3/52T SMD Schottky diodes
SSB43L-E3/52T SMD Schottky diodes
auf Bestellung 577 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
108+ | 0.66 EUR |
241+ | 0.30 EUR |
255+ | 0.28 EUR |
SSB43LHE3-A/H |
Hersteller: VISHAY
SSB43LHE3-A/H SMD Schottky diodes
SSB43LHE3-A/H SMD Schottky diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSB44-E3/52T |
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Hersteller: VISHAY
SSB44-E3/52T SMD Schottky diodes
SSB44-E3/52T SMD Schottky diodes
auf Bestellung 2126 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
363+ | 0.20 EUR |
385+ | 0.19 EUR |
SSC53L-E3/57T |
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Hersteller: VISHAY
SSC53L-E3/57T SMD Schottky diodes
SSC53L-E3/57T SMD Schottky diodes
auf Bestellung 1212 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
157+ | 0.46 EUR |
167+ | 0.43 EUR |
SSC53L-E3/9AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 13 inch reel
Max. off-state voltage: 30V
Max. forward voltage: 0.38V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 175A
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Quantity in set/package: 3500pcs.
Mounting: SMD
Case: SMC
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; 13 inch reel
Max. off-state voltage: 30V
Max. forward voltage: 0.38V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 175A
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Quantity in set/package: 3500pcs.
Mounting: SMD
Case: SMC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2984 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
132+ | 0.54 EUR |
151+ | 0.47 EUR |
173+ | 0.41 EUR |
179+ | 0.40 EUR |
500+ | 0.39 EUR |
SSC54-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 175A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 175A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2124 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
120+ | 0.60 EUR |
136+ | 0.53 EUR |
157+ | 0.46 EUR |
166+ | 0.43 EUR |
SSC54-E3/9AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 175A
Kind of package: 13 inch reel
Quantity in set/package: 3500pcs.
Leakage current: 60mA
Anzahl je Verpackung: 3500 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.42V
Max. forward impulse current: 175A
Kind of package: 13 inch reel
Quantity in set/package: 3500pcs.
Leakage current: 60mA
Anzahl je Verpackung: 3500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SSC54HE3-A/I |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 175A
Kind of package: 13 inch reel
Application: automotive industry
Quantity in set/package: 3500pcs.
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 175A
Kind of package: 13 inch reel
Application: automotive industry
Quantity in set/package: 3500pcs.
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD08P06-155L-GE3 |
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Hersteller: VISHAY
SUD08P06-155L-GE3 SMD P channel transistors
SUD08P06-155L-GE3 SMD P channel transistors
auf Bestellung 1267 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
108+ | 0.66 EUR |
115+ | 0.62 EUR |
1000+ | 0.61 EUR |
SUD09P10-195-BE3 |
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Hersteller: VISHAY
SUD09P10-195-BE3 SMD P channel transistors
SUD09P10-195-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD09P10-195-GE3 |
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Hersteller: VISHAY
SUD09P10-195-GE3 SMD P channel transistors
SUD09P10-195-GE3 SMD P channel transistors
auf Bestellung 1980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
2000+ | 0.57 EUR |
SUD15N15-95-E3 |
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Hersteller: VISHAY
SUD15N15-95-E3 SMD N channel transistors
SUD15N15-95-E3 SMD N channel transistors
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.79 EUR |
48+ | 1.50 EUR |
51+ | 1.42 EUR |
SUD19N20-90-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD19P06-60-E3 |
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Hersteller: VISHAY
SUD19P06-60-E3 SMD P channel transistors
SUD19P06-60-E3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD19P06-60-GE3 |
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Hersteller: VISHAY
SUD19P06-60-GE3 SMD P channel transistors
SUD19P06-60-GE3 SMD P channel transistors
auf Bestellung 1535 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.35 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
SUD19P06-60L-E3 |
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Hersteller: VISHAY
SUD19P06-60L-E3 SMD P channel transistors
SUD19P06-60L-E3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD20N10-66L-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.9A
Pulsed drain current: 25A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16.9A; Idm: 25A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.9A
Pulsed drain current: 25A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD23N06-31-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17.1A; 31.25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17.1A
Power dissipation: 31.25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17.1A; 31.25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17.1A
Power dissipation: 31.25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.66 EUR |
66+ | 1.09 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
1000+ | 0.56 EUR |
SUD25N15-52-E3 |
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Hersteller: VISHAY
SUD25N15-52-E3 SMD N channel transistors
SUD25N15-52-E3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD35N10-26P-BE3 |
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Hersteller: VISHAY
SUD35N10-26P-BE3 SMD N channel transistors
SUD35N10-26P-BE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD35N10-26P-E3 |
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Hersteller: VISHAY
SUD35N10-26P-E3 SMD N channel transistors
SUD35N10-26P-E3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD35N10-26P-GE3 |
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Hersteller: VISHAY
SUD35N10-26P-GE3 SMD N channel transistors
SUD35N10-26P-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD40151EL-GE3 |
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Hersteller: VISHAY
SUD40151EL-GE3 SMD P channel transistors
SUD40151EL-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD40N08-16-E3 |
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Hersteller: VISHAY
SUD40N08-16-E3 SMD N channel transistors
SUD40N08-16-E3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD40N10-25-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 40A; Idm: 70A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 40A; Idm: 70A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD50N03-06AP-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 100A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 100A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD50N04-8M8P-4GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 100A; 30.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 100A
Power dissipation: 30.8W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 100A; 30.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 100A
Power dissipation: 30.8W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2211 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.67 EUR |
58+ | 1.25 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
7500+ | 0.38 EUR |
SUD50N06-09L-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 50A; 136W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 50A; 136W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
43+ | 1.66 EUR |
10000+ | 1.23 EUR |
SUD50P04-08-GE3 |
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Hersteller: VISHAY
SUD50P04-08-GE3 SMD P channel transistors
SUD50P04-08-GE3 SMD P channel transistors
auf Bestellung 1624 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
1000+ | 0.93 EUR |
SUD50P04-09L-E3 |
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Hersteller: VISHAY
SUD50P04-09L-E3 SMD P channel transistors
SUD50P04-09L-E3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD50P06-15-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W
Case: DPAK; TO252
Kind of package: reel; tape
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 113W
Case: DPAK; TO252
Kind of package: reel; tape
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2527 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.49 EUR |
26+ | 2.79 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
SUD50P06-15L-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W
Case: DPAK; TO252
Kind of package: reel; tape
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -80A; 136W
Case: DPAK; TO252
Kind of package: reel; tape
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Drain-source voltage: -60V
Drain current: -50A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
29+ | 2.55 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
1000+ | 1.37 EUR |
SUD50P08-25L-E3 |
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Hersteller: VISHAY
SUD50P08-25L-E3 SMD P channel transistors
SUD50P08-25L-E3 SMD P channel transistors
auf Bestellung 727 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
250+ | 1.64 EUR |
SUD50P10-43L-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Drain-source voltage: -100V
Drain current: -37.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -37.1A; Idm: -40A; 95W
Drain-source voltage: -100V
Drain current: -37.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD50P10-43L-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Drain-source voltage: -100V
Drain current: -36.4A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 72.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -36.4A; Idm: -40A; 72.7W
Drain-source voltage: -100V
Drain current: -36.4A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 72.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 160nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD70090E-GE3 |
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Hersteller: VISHAY
SUD70090E-GE3 SMD N channel transistors
SUD70090E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD80460E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A
Case: TO252
Drain-source voltage: 150V
Drain current: 42A
On-state resistance: 44.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 42A; Idm: 40A
Case: TO252
Drain-source voltage: 150V
Drain current: 42A
On-state resistance: 44.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUD90330E-GE3 |
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Hersteller: VISHAY
SUD90330E-GE3 SMD N channel transistors
SUD90330E-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUG80050E-GE3 |
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Hersteller: VISHAY
SUG80050E-GE3 THT N channel transistors
SUG80050E-GE3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUG90090E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 395W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 129nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 395W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 129nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUM10250E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 36.6A; 125W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 36.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 57.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 36.6A; 125W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 36.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 57.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 673 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.62 EUR |
27+ | 2.75 EUR |
28+ | 2.60 EUR |
50+ | 2.56 EUR |
100+ | 2.50 EUR |
SUM110N10-09-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.73 EUR |
22+ | 3.35 EUR |
23+ | 3.16 EUR |
800+ | 3.05 EUR |
SUM110P04-04L-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -110A; Idm: -240A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -110A
Pulsed drain current: -240A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 0.35µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -110A; Idm: -240A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -110A
Pulsed drain current: -240A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 0.35µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SUM110P04-05-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -33A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -33A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 280nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -33A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -33A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 280nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 715 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.99 EUR |
17+ | 4.29 EUR |
18+ | 4.05 EUR |
800+ | 3.99 EUR |
SUM110P06-07L-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -110A; Idm: -240A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -110A
Pulsed drain current: -240A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 345nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -110A; Idm: -240A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -110A
Pulsed drain current: -240A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 345nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 965 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.22 EUR |
19+ | 3.80 EUR |
26+ | 2.79 EUR |
28+ | 2.65 EUR |
500+ | 2.60 EUR |
800+ | 2.55 EUR |
SUM110P06-08L-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -110A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -110A
Pulsed drain current: -200A
Power dissipation: 272W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 240nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -110A; Idm: -200A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -110A
Pulsed drain current: -200A
Power dissipation: 272W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 240nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1839 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.30 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
1600+ | 1.86 EUR |
SUM110P08-11L-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -110A; Idm: -120A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -110A
Pulsed drain current: -120A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -110A; Idm: -120A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -110A
Pulsed drain current: -120A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 678 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.36 EUR |
17+ | 4.38 EUR |
18+ | 4.15 EUR |
SUM40010EL-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A
Case: TO263
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 230nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A
Case: TO263
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 230nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH