| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 1N4148WS-HE3-18 | VISHAY |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 350mA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.35A Leakage current: 0.1mA Power dissipation: 0.2W Application: automotive industry |
Produkt ist nicht verfügbar |
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MMU01020D1500BB300 | VISHAY |
Category: SMD resistors Description: Resistor: metal film; SMD; 150Ω; 200mW; ±0.1%; 150V; Ø1.1x2.2mm Type of resistor: metal film Resistance: 150Ω Power: 0.2W Tolerance: ±0.1% Operating temperature: -55...125°C Body dimensions: Ø1.1x2.2mm Roll diameter max.: 180mm Temperature coefficient: 25ppm/°C Operating voltage: 150V Quantity in set/package: 3000pcs. Mounting: SMD |
Produkt ist nicht verfügbar |
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| SS14HE3_B/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Leakage current: 0.2mA Application: automotive industry |
Produkt ist nicht verfügbar |
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| SS14HE3_B/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Leakage current: 0.2mA Application: automotive industry |
Produkt ist nicht verfügbar |
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| 1N4734A-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 5.6V; 14 inch reel; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.6V Kind of package: 14 inch reel Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
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| BAT54A-E3-18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD Type of diode: Schottky switching Mounting: SMD |
Produkt ist nicht verfügbar |
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CNY17F-4 | VISHAY |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 6µs Turn-off time: 25µs Manufacturer series: CNY17F CTR@If: 16-32%@10mA |
auf Bestellung 866 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA0805120KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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CRCW0805120KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C Body dimensions: 2.2x1.4x0.6mm |
Produkt ist nicht verfügbar |
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CRCW0805120KFHEAP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C Body dimensions: 2x1.25x0.5mm |
Produkt ist nicht verfügbar |
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CRCW0805120KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120kΩ Power: 0.125W Tolerance: ±5% Operating voltage: 150V Temperature coefficient: 200ppm/°C Body dimensions: 2x1.25x0.5mm Quantity in set/package: 5000pcs. Mounting: SMD Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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| BZX85C15-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 15V; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| B340A-E3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.5mA Max. forward voltage: 0.55V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 65A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| 1N4742A-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; 14 inch reel; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Kind of package: 14 inch reel Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
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| SS16HE3_B/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Leakage current: 0.2mA Application: automotive industry |
Produkt ist nicht verfügbar |
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CRCW040249R9FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; CRCW0402; 50V Mounting: SMD Case - mm: 1005 Operating voltage: 50V Tolerance: ±1% Temperature coefficient: 100ppm/°C Case - inch: 0402 Manufacturer series: CRCW0402 Type of resistor: thick film Operating temperature: -55...155°C Resistance: 49.9Ω Power: 62.5mW |
auf Bestellung 8061 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAT54WS-E3-18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.15W |
Produkt ist nicht verfügbar |
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| BAT54WS-G3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Reverse recovery time: 5ns |
Produkt ist nicht verfügbar |
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RCA120647K0JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C Resistance: 47kΩ Tolerance: ±5% Power: 0.25W Operating voltage: 200V Temperature coefficient: 100ppm/°C Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Type of resistor: thick film |
Produkt ist nicht verfügbar |
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1N4148W-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Power dissipation: 0.35W Leakage current: 0.1mA |
auf Bestellung 2709 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ5.0A-M3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 7 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMBJ5.0A-M3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 13 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| SMBJ5.0AHE3_A/I | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: 13 inch reel; tape Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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RCA060318K7FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 18.7kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA060318K7FKEC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 18.7kΩ Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Case - inch: 0603 Temperature coefficient: 100ppm/°C Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
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| SMBJ33AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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| SMBJ30A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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BAS70-06-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 3000pcs. Application: automotive industry Features of semiconductor devices: small signal Capacitance: 2pF Max. forward impulse current: 0.2A |
auf Bestellung 2214 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHH250N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 13A Power dissipation: 89W Case: 8; X Gate-source voltage: 30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 23nC Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SD103AWS-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
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| SD103AW-G3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 10ns Mounting: SMD Reverse recovery time: 10ns Leakage current: 5µA Max. load current: 0.35A Max. forward voltage: 0.6V Max. off-state voltage: 40V Semiconductor structure: single diode Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
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| SD103AWS-G3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.35A; 10ns Mounting: SMD Reverse recovery time: 10ns Leakage current: 5µA Load current: 0.35A Max. forward voltage: 0.6V Max. off-state voltage: 40V Semiconductor structure: single diode Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
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| SIHB20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 19A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: 30V Mounting: SMD Gate charge: 92nC |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE22A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: 13 inch reel Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 49A Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201 Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
Produkt ist nicht verfügbar |
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CRCW080549R9FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Manufacturer series: CRCW0805 Operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 37400 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N4001-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying Type of diode: rectifying |
auf Bestellung 25400 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMAJ5.0CAHE3_A/I | VISHAY |
Category: Diodes - Unclassified Description: SMAJ5.0CAHE3_A/I |
auf Bestellung 105000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0603470RFKEC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Power: 0.125W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Roll diameter max.: 330mm Quantity in set/package: 20000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C Body dimensions: 1.65x0.95x0.5mm |
Produkt ist nicht verfügbar |
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TZMC15-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs. Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: MiniMELF; SOD80 Semiconductor structure: single diode Quantity in set/package: 2500pcs. |
auf Bestellung 25706 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES1D-M3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
Produkt ist nicht verfügbar |
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| ES1D-M3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
Produkt ist nicht verfügbar |
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| ES1DHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 15ns; Ufmax: 920mV; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA Application: automotive industry |
Produkt ist nicht verfügbar |
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SMCJ24A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
auf Bestellung 329 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMCJ24A-E3/9AT | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
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| SMCJ24AHE3_A/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
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| SIHP18N50C-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 500V Drain current: 18A Power dissipation: 223W Case: TO220AB Gate-source voltage: 30V Mounting: THT Gate charge: 76nC Kind of channel: enhancement Semiconductor structure: single transistor |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SD103BW-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.35A; 10ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.35A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 2A Leakage current: 5µA Reverse recovery time: 10ns |
Produkt ist nicht verfügbar |
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| SIHB35N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 132nC |
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| SIHB35N60EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
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| SIHF35N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
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| SIHG35N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
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| SIHP35N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 132nC |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SIHP35N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 134nC |
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 |
GBU8M-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| BZX55C4V7-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: 14 inch reel Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Quantity in set/package: 10000pcs. |
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 |
CRCW120639K0JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.25W Tolerance: ±5% Resistance: 39kΩ Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| IRLZ34PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 110A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
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| SIHG47N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 357W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 357W Case: TO247-3 On-state resistance: 64mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| P6KE56A-E3/73 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 53.2V; 7.8A; unidirectional; DO15,DO204AC; 0.6kW; P6KE Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Max. forward impulse current: 7.8A Max. off-state voltage: 47.8V Breakdown voltage: 53.2V Peak pulse power dissipation: 0.6kW Case: DO15; DO204AC Manufacturer series: P6KE Leakage current: 1µA Number of channels: 1 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
|
RCA0402560KFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 560kΩ; 63mW; ±1%; 50V; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 560kΩ Power: 63mW Tolerance: ±1% Operating voltage: 50V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
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Im Einkaufswagen Stück im Wert von UAH |
| 1N4148WS-HE3-18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 350mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Power dissipation: 0.2W
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 350mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Power dissipation: 0.2W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMU01020D1500BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal film; SMD; 150Ω; 200mW; ±0.1%; 150V; Ø1.1x2.2mm
Type of resistor: metal film
Resistance: 150Ω
Power: 0.2W
Tolerance: ±0.1%
Operating temperature: -55...125°C
Body dimensions: Ø1.1x2.2mm
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 150V
Quantity in set/package: 3000pcs.
Mounting: SMD
Category: SMD resistors
Description: Resistor: metal film; SMD; 150Ω; 200mW; ±0.1%; 150V; Ø1.1x2.2mm
Type of resistor: metal film
Resistance: 150Ω
Power: 0.2W
Tolerance: ±0.1%
Operating temperature: -55...125°C
Body dimensions: Ø1.1x2.2mm
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 150V
Quantity in set/package: 3000pcs.
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS14HE3_B/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS14HE3_B/I |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4734A-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; 14 inch reel; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Kind of package: 14 inch reel
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; 14 inch reel; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Kind of package: 14 inch reel
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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| BAT54A-E3-18 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CNY17F-4 | |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 6µs
Turn-off time: 25µs
Manufacturer series: CNY17F
CTR@If: 16-32%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 6µs
Turn-off time: 25µs
Manufacturer series: CNY17F
CTR@If: 16-32%@10mA
auf Bestellung 866 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 168+ | 0.43 EUR |
| 186+ | 0.38 EUR |
| 201+ | 0.36 EUR |
| 218+ | 0.33 EUR |
| 500+ | 0.27 EUR |
| RCA0805120KFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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| CRCW0805120KFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 2.2x1.4x0.6mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 2.2x1.4x0.6mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW0805120KFHEAP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.5mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.5mm
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CRCW0805120KJNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.5mm
Quantity in set/package: 5000pcs.
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.5mm
Quantity in set/package: 5000pcs.
Mounting: SMD
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BZX85C15-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| B340A-E3/5AT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.5mA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 65A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.5mA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 65A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N4742A-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 14 inch reel; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: 14 inch reel
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 14 inch reel; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: 14 inch reel
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SS16HE3_B/I |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Leakage current: 0.2mA
Application: automotive industry
Produkt ist nicht verfügbar
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| CRCW040249R9FKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; CRCW0402; 50V
Mounting: SMD
Case - mm: 1005
Operating voltage: 50V
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Case - inch: 0402
Manufacturer series: CRCW0402
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 49.9Ω
Power: 62.5mW
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; CRCW0402; 50V
Mounting: SMD
Case - mm: 1005
Operating voltage: 50V
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Case - inch: 0402
Manufacturer series: CRCW0402
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 49.9Ω
Power: 62.5mW
auf Bestellung 8061 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 660+ | 0.11 EUR |
| BAT54WS-E3-18 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Produkt ist nicht verfügbar
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| BAT54WS-G3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RCA120647K0JNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C
Resistance: 47kΩ
Tolerance: ±5%
Power: 0.25W
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C
Resistance: 47kΩ
Tolerance: ±5%
Power: 0.25W
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
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Im Einkaufswagen
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| 1N4148W-G3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Power dissipation: 0.35W
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; Ufmax: 1.2V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Power dissipation: 0.35W
Leakage current: 0.1mA
auf Bestellung 2709 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1516+ | 0.047 EUR |
| 1743+ | 0.041 EUR |
| 1946+ | 0.037 EUR |
| 2050+ | 0.035 EUR |
| SMBJ5.0A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ5.0A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ5.0AHE3_A/I |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RCA060318K7FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2790+ | 0.026 EUR |
| RCA060318K7FKEC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Case - inch: 0603
Temperature coefficient: 100ppm/°C
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ33AHE3_B/H |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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Im Einkaufswagen
Stück im Wert von UAH
| SMBJ30A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS70-06-HE3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 0.2A
auf Bestellung 2214 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 530+ | 0.14 EUR |
| 890+ | 0.081 EUR |
| 1010+ | 0.071 EUR |
| SIHH250N60EF-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: 8; X
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: 8; X
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 3.47 EUR |
| SD103AWS-HE3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SD103AW-G3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Max. load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Max. load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SD103AWS-G3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.35A; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.35A; 10ns
Mounting: SMD
Reverse recovery time: 10ns
Leakage current: 5µA
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Semiconductor structure: single diode
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB20N50E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 2.45 EUR |
| 1.5KE22A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW080549R9FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 37400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.036 EUR |
| 3800+ | 0.019 EUR |
| 6200+ | 0.012 EUR |
| 17800+ | 0.004 EUR |
| 1N4001-E3/73 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 25400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17000+ | 0.035 EUR |
| SMAJ5.0CAHE3_A/I |
|
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7500+ | 0.14 EUR |
| CRCW0603470RFKEC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 330mm
Quantity in set/package: 20000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.65x0.95x0.5mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 330mm
Quantity in set/package: 20000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 1.65x0.95x0.5mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TZMC15-GS08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
auf Bestellung 25706 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1042+ | 0.069 EUR |
| 1799+ | 0.04 EUR |
| 2565+ | 0.028 EUR |
| 2891+ | 0.025 EUR |
| 3334+ | 0.021 EUR |
| 5000+ | 0.02 EUR |
| 7500+ | 0.019 EUR |
| 12500+ | 0.018 EUR |
| ES1D-M3/61T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1D-M3/5AT |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1DHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; Ufmax: 920mV; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ24A-E3/57T |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
auf Bestellung 329 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 156+ | 0.46 EUR |
| 235+ | 0.3 EUR |
| SMCJ24A-E3/9AT |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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Stück im Wert von UAH
| SMCJ24AHE3_A/H |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
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Im Einkaufswagen
Stück im Wert von UAH
| SIHP18N50C-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 223W
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Gate charge: 76nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 223W
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Gate charge: 76nC
Kind of channel: enhancement
Semiconductor structure: single transistor
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 300+ | 2.07 EUR |
| SD103BW-E3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.35A; 10ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Leakage current: 5µA
Reverse recovery time: 10ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.35A; 10ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Leakage current: 5µA
Reverse recovery time: 10ns
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Stück im Wert von UAH
| SIHB35N60E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB35N60EF-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF35N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG35N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP35N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 132nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP35N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 134nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU8M-M3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX55C4V7-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CRCW120639K0JNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±5%
Resistance: 39kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±5%
Resistance: 39kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1100+ | 0.064 EUR |
| IRLZ34PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG47N60E-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| P6KE56A-E3/73 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2V; 7.8A; unidirectional; DO15,DO204AC; 0.6kW; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2V
Peak pulse power dissipation: 0.6kW
Case: DO15; DO204AC
Manufacturer series: P6KE
Leakage current: 1µA
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2V; 7.8A; unidirectional; DO15,DO204AC; 0.6kW; P6KE
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Max. forward impulse current: 7.8A
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2V
Peak pulse power dissipation: 0.6kW
Case: DO15; DO204AC
Manufacturer series: P6KE
Leakage current: 1µA
Number of channels: 1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RCA0402560KFKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 560kΩ; 63mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 560kΩ
Power: 63mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0402; 560kΩ; 63mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 560kΩ
Power: 63mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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