| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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VJ0402Y473KXJAC | VISHAY |
 Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 47nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 47nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
auf Bestellung 4976 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA120661K9FHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 61.9kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RCA120661K9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 61.9kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CMB02070X1004GB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1MΩ; SMD; MELF; 0207; 1W; ±2%; 500V; -55÷125°C Length: 5.8mm Tolerance: ±2% Diameter: 2.2mm Type of resistor: carbon film Mounting: SMD Operating temperature: -55...125°C Resistance: 1MΩ Body dimensions: Ø2.2x5.8mm Power: 1W Roll diameter max.: 330mm Case: MELF Conform to the norm: AEC-Q200 Operating voltage: 500V Case - inch: 0207 Case - mm: 6123 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CMB02070X1020FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 102Ω; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm Length: 5.8mm Tolerance: ±1% Diameter: 2.2mm Type of resistor: carbon film Mounting: SMD Operating temperature: -55...125°C Resistance: 102Ω Body dimensions: Ø2.2x5.8mm Power: 1W Roll diameter max.: 330mm Case: MELF Conform to the norm: AEC-Q200 Operating voltage: 500V Case - inch: 0207 Case - mm: 6123 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIRA18DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 33A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Pulsed drain current: 70A Power dissipation: 14.7W Case: PowerPAK® SO8 Gate-source voltage: -16...20V Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIRA18DDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 90A Power dissipation: 17W Case: PowerPAK® SO8 Gate-source voltage: -16...20V Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 6.83mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MURS160-M3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AA,SMB; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MURS160HE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 50ns; DO214AA,SMB; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI4056ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Pulsed drain current: 40A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMBJ26A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMBJ26AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCT06030C4590DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCT06030C4590DPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 330mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCT06030D4590DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Roll diameter max.: 180mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCT06030D4590DPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Roll diameter max.: 330mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCT0603MD4590DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.21W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: M Operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 25ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCT0603MD4590DPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.21W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: M Operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 25ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 330mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SI7149DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -70A Power dissipation: 44.4W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Mounting: SMD Pulsed drain current: -14A Power dissipation: 42W Gate charge: 20nC Polarisation: unipolar Drain current: -2.3A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 1.5Ω |
auf Bestellung 341 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9220TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR9220TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR9220TRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IHLP2525CZER100M1A | VISHAY |
Category: Inductors Description: Inductor: wire; SMD; 2525; 10uH; Ioper: 4A; ±20%; IHLP; 6.86x6.47mm Type of inductor: wire Mounting: SMD Inductance: 10µH Operating current: 4A Tolerance: ±20% Body dimensions: 6.86x6.47mm Test frequency: 0.1MHz Saturation current: 3.5A Conform to the norm: AEC-Q200 Height: 3mm Max resistance: 71.2mΩ Operating temperature: -55...125°C Core material: iron powder Case - inch: 2525 Case - mm: 6363 Manufacturer series: IHLP |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SML4749-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; DO214AC,SMA; single diode; 7 inch reel Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±10% Case: DO214AC; SMA Semiconductor structure: single diode Manufacturer standard package: 1800pcs. Kind of package: 7 inch reel |
auf Bestellung 1628 Stücke: Lieferzeit 14-21 Tag (e) |
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ZM4749A-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; DO213AB,MELF glass; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: DO213AB; MELF glass Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SML4749A-E3/5A | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; DO214AC,SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: DO214AC; SMA Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MAL225742102E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø25x45mm; ±20% Height: 45mm Operating temperature: -40...85°C Body dimensions: Ø25x45mm Type of capacitor: electrolytic Capacitance: 1mF Operating voltage: 200V DC Tolerance: ±20% Diameter: 25mm Terminal pitch: 10mm Mounting: SNAP-IN Service life: 5000h |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS40-06-HE3_A-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 40mA; 5ns; 220mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 40mA Semiconductor structure: common cathode; double Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.22W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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D55342K07B221ERS6 | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 221Ω; SMD; 1206; 250mW; ±1%; 3.18x1.6x0.51mm Mounting: SMD Operating temperature: -65...150°C Tolerance: ±1% Type of resistor: thick film Resistance: 221Ω Body dimensions: 3.18x1.6x0.51mm Power: 0.25W Temperature coefficient: 100ppm/°C Max. operating voltage: 100V Case - inch: 1206 Quantity in set/package: 300pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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D55342K07B392DRS6 | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 392Ω; SMD; 1206; 250mW; ±1%; 3.18x1.6x0.51mm Mounting: SMD Operating temperature: -65...150°C Tolerance: ±1% Type of resistor: thick film Resistance: 392Ω Body dimensions: 3.18x1.6x0.51mm Power: 0.25W Temperature coefficient: 100ppm/°C Max. operating voltage: 100V Case - inch: 1206 Quantity in set/package: 300pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1.5SMC400A-M3/57T | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 380...420V Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: 1.5SMC Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1.5SMC400A-M3/9AT | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 380...420V Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: 13 inch reel; tape Manufacturer series: 1.5SMC Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1.5SMC400AHM3_B/I | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 380...420V Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: 13 inch reel; tape Manufacturer series: 1.5SMC Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 5KASMC40AHM3_A/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 44.4V; 77.5A; unidirectional; DO214AB,SMC; PAR® Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 77.5A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 2µA Kind of package: 7 inch reel; tape Technology: PAR® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIR862DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 50A; Idm: 70A; 69W Mounting: SMD Pulsed drain current: 70A Power dissipation: 69W Gate charge: 90nC Polarisation: unipolar Technology: TrenchFET® Drain current: 50A Kind of channel: enhancement Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 3.5mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIS862DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Mounting: SMD Pulsed drain current: 100A Power dissipation: 52W Gate charge: 20.8nC Polarisation: unipolar Technology: TrenchFET® Drain current: 40A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® 1212-8 On-state resistance: 12.5mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 1N5401-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; Ifsm: 200A; DO201AD; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SMCJ5.0CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1mA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA120662R0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 62Ω; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 62Ω Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CRCW120662R0FKEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 62Ω; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 62Ω Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.75W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.2x1.6x0.55mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS19-E3-18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS19-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VS-MBR1035-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 10A; TO220AC; Ufmax: 840mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.84V Kind of package: tube Manufacturer standard package: 50pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MKP1848H54070JK2 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; DC-Link; H: 25mm; 4uF; 700VDC; THT; ±5% Type of capacitor: polypropylene Kind of capacitor: DC-Link Height: 25mm Capacitance: 4µF Operating voltage: 700V DC Leads: radial Mounting: THT ESR value: 10mΩ Tolerance: ±5% Body dimensions: 32x15mm Terminal pitch: 27.5mm Conform to the norm: AEC-Q200 Operating temperature: -40...85°C |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW04-20B-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 400W; BZW04; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20.5V Breakdown voltage: 22.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Manufacturer series: BZW04 Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Leakage current: 1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SISS4409DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -59.2A; 56.8W Case: PowerPAK® 1212-8 Polarisation: unipolar Drain current: -59.2A Kind of channel: enhancement Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 9mΩ Mounting: SMD Power dissipation: 56.8W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SISS4402DN-T1-UE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 128A Case: PowerPAK® 1212-8 Gate charge: 46.7nC Polarisation: unipolar Technology: TrenchFET® Drain current: 128A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: reel; tape On-state resistance: 2.2mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SISS4410DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A Case: PowerPAK® 1212-8 Gate charge: 5.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 36A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 9mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFR420TRPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RCA0402140KFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 140kΩ; 0402; 63mW; ±1%; 50V; -55÷155°C Type of resistor: thick film Resistance: 140kΩ Case - inch: 0402 Case - mm: 1005 Power: 63mW Tolerance: ±1% Operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CRCW0402140KFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 140kΩ; SMD; 0402; 63mW; ±1%; 50V; 1x0.5x0.35mm Case - inch: 0402 Case - mm: 1005 Quantity in set/package: 10000pcs. Tolerance: ±1% Type of resistor: thick film Mounting: SMD Operating temperature: -55...155°C Resistance: 140kΩ Body dimensions: 1x0.5x0.35mm Power: 63mW Temperature coefficient: 100ppm/°C Operating voltage: 50V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BYV27-150-TR | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 50A; SOD57; 10 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.07V Reverse recovery time: 25ns Max. load current: 15A Kind of package: 10 inch reel Leakage current: 0.15mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SBYV27-100-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 50A; DO15,DO204AC; 15ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 50A Case: DO15; DO204AC Max. forward voltage: 1.1V Reverse recovery time: 15ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SBYV27-150-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 50A; DO15,DO204AC; 15ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 50A Case: DO15; DO204AC Max. forward voltage: 1.1V Reverse recovery time: 15ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SBYV27-50-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 2A; Ifsm: 50A; DO15,DO204AC; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 50A Case: DO15; DO204AC Max. forward voltage: 1.1V Reverse recovery time: 15ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BYV28-050-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Reverse recovery time: 30ns Max. load current: 25A Kind of package: Ammo Pack Leakage current: 0.15mA |
auf Bestellung 12326 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV28-200-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.1V Reverse recovery time: 30ns Max. load current: 25A Kind of package: Ammo Pack Leakage current: 0.15mA |
auf Bestellung 1695 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV28-600-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3.5A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward impulse current: 90A Case: SOD64 Max. forward voltage: 1.25V Reverse recovery time: 50ns Kind of package: Ammo Pack Leakage current: 0.15mA |
auf Bestellung 2194 Stücke: Lieferzeit 14-21 Tag (e) |
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| VJ0402Y473KXJAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 47nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 47nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 455+ | 0.19 EUR |
| 758+ | 0.11 EUR |
| 1134+ | 0.075 EUR |
| RCA120661K9FHEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RCA120661K9FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CMB02070X1004GB700 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1MΩ; SMD; MELF; 0207; 1W; ±2%; 500V; -55÷125°C
Length: 5.8mm
Tolerance: ±2%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1MΩ
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
Category: SMD resistors
Description: Resistor: carbon film; 1MΩ; SMD; MELF; 0207; 1W; ±2%; 500V; -55÷125°C
Length: 5.8mm
Tolerance: ±2%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1MΩ
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CMB02070X1020FB700 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 102Ω; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Length: 5.8mm
Tolerance: ±1%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 102Ω
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
Category: SMD resistors
Description: Resistor: carbon film; 102Ω; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Length: 5.8mm
Tolerance: ±1%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 102Ω
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIRA18DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 33A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Pulsed drain current: 70A
Power dissipation: 14.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 33A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Pulsed drain current: 70A
Power dissipation: 14.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIRA18DDP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 17W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 6.83mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 17W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 6.83mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS160-M3/52T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS160HE3_A/I |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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Stück im Wert von UAH
| SI4056ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ26A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
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| SMBJ26AHE3_B/H |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
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| MCT06030C4590DP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Produkt ist nicht verfügbar
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| MCT06030C4590DPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Produkt ist nicht verfügbar
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| MCT06030D4590DP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 180mm
Produkt ist nicht verfügbar
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| MCT06030D4590DPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 330mm
Produkt ist nicht verfügbar
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| MCT0603MD4590DP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| MCT0603MD4590DPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Produkt ist nicht verfügbar
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| SI7149DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRFR9220TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Mounting: SMD
Pulsed drain current: -14A
Power dissipation: 42W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 1.5Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Mounting: SMD
Pulsed drain current: -14A
Power dissipation: 42W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 1.5Ω
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.58 EUR |
| 43+ | 2 EUR |
| 49+ | 1.75 EUR |
| 66+ | 1.3 EUR |
| 100+ | 1.15 EUR |
| 125+ | 1.12 EUR |
| 250+ | 1.01 EUR |
| IRFR9220PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 2.96 EUR |
| 33+ | 2.58 EUR |
| IRFR9220TRPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRFR9220TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IRFR9220TRRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IHLP2525CZER100M1A |
|
Hersteller: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2525; 10uH; Ioper: 4A; ±20%; IHLP; 6.86x6.47mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 4A
Tolerance: ±20%
Body dimensions: 6.86x6.47mm
Test frequency: 0.1MHz
Saturation current: 3.5A
Conform to the norm: AEC-Q200
Height: 3mm
Max resistance: 71.2mΩ
Operating temperature: -55...125°C
Core material: iron powder
Case - inch: 2525
Case - mm: 6363
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 2525; 10uH; Ioper: 4A; ±20%; IHLP; 6.86x6.47mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 4A
Tolerance: ±20%
Body dimensions: 6.86x6.47mm
Test frequency: 0.1MHz
Saturation current: 3.5A
Conform to the norm: AEC-Q200
Height: 3mm
Max resistance: 71.2mΩ
Operating temperature: -55...125°C
Core material: iron powder
Case - inch: 2525
Case - mm: 6363
Manufacturer series: IHLP
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.5 EUR |
| SML4749-E3/61 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; DO214AC,SMA; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Case: DO214AC; SMA
Semiconductor structure: single diode
Manufacturer standard package: 1800pcs.
Kind of package: 7 inch reel
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; DO214AC,SMA; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Case: DO214AC; SMA
Semiconductor structure: single diode
Manufacturer standard package: 1800pcs.
Kind of package: 7 inch reel
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 394+ | 0.21 EUR |
| ZM4749A-GS18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; DO213AB,MELF glass; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; DO213AB,MELF glass; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| SML4749A-E3/5A |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: DO214AC; SMA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| MAL225742102E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø25x45mm; ±20%
Height: 45mm
Operating temperature: -40...85°C
Body dimensions: Ø25x45mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 200V DC
Tolerance: ±20%
Diameter: 25mm
Terminal pitch: 10mm
Mounting: SNAP-IN
Service life: 5000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 200VDC; Ø25x45mm; ±20%
Height: 45mm
Operating temperature: -40...85°C
Body dimensions: Ø25x45mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 200V DC
Tolerance: ±20%
Diameter: 25mm
Terminal pitch: 10mm
Mounting: SNAP-IN
Service life: 5000h
Produkt ist nicht verfügbar
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| BAS40-06-HE3_A-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 40mA; 5ns; 220mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 40mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.22W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 40mA; 5ns; 220mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 40mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.22W
Produkt ist nicht verfügbar
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| D55342K07B221ERS6 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 221Ω; SMD; 1206; 250mW; ±1%; 3.18x1.6x0.51mm
Mounting: SMD
Operating temperature: -65...150°C
Tolerance: ±1%
Type of resistor: thick film
Resistance: 221Ω
Body dimensions: 3.18x1.6x0.51mm
Power: 0.25W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 100V
Case - inch: 1206
Quantity in set/package: 300pcs.
Category: SMD resistors
Description: Resistor: thick film; 221Ω; SMD; 1206; 250mW; ±1%; 3.18x1.6x0.51mm
Mounting: SMD
Operating temperature: -65...150°C
Tolerance: ±1%
Type of resistor: thick film
Resistance: 221Ω
Body dimensions: 3.18x1.6x0.51mm
Power: 0.25W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 100V
Case - inch: 1206
Quantity in set/package: 300pcs.
Produkt ist nicht verfügbar
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| D55342K07B392DRS6 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 392Ω; SMD; 1206; 250mW; ±1%; 3.18x1.6x0.51mm
Mounting: SMD
Operating temperature: -65...150°C
Tolerance: ±1%
Type of resistor: thick film
Resistance: 392Ω
Body dimensions: 3.18x1.6x0.51mm
Power: 0.25W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 100V
Case - inch: 1206
Quantity in set/package: 300pcs.
Category: SMD resistors
Description: Resistor: thick film; 392Ω; SMD; 1206; 250mW; ±1%; 3.18x1.6x0.51mm
Mounting: SMD
Operating temperature: -65...150°C
Tolerance: ±1%
Type of resistor: thick film
Resistance: 392Ω
Body dimensions: 3.18x1.6x0.51mm
Power: 0.25W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 100V
Case - inch: 1206
Quantity in set/package: 300pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| 1.5SMC400A-M3/57T |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: 1.5SMC
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: 1.5SMC
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1.5SMC400A-M3/9AT |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: 13 inch reel; tape
Manufacturer series: 1.5SMC
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: 13 inch reel; tape
Manufacturer series: 1.5SMC
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| 1.5SMC400AHM3_B/I |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: 13 inch reel; tape
Manufacturer series: 1.5SMC
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 380÷420V; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: 13 inch reel; tape
Manufacturer series: 1.5SMC
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| 5KASMC40AHM3_A/H |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4V; 77.5A; unidirectional; DO214AB,SMC; PAR®
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 77.5A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: 7 inch reel; tape
Technology: PAR®
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 44.4V; 77.5A; unidirectional; DO214AB,SMC; PAR®
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 77.5A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: 7 inch reel; tape
Technology: PAR®
Application: automotive industry
Produkt ist nicht verfügbar
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| SIR862DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 50A; Idm: 70A; 69W
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 69W
Gate charge: 90nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 3.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 50A; Idm: 70A; 69W
Mounting: SMD
Pulsed drain current: 70A
Power dissipation: 69W
Gate charge: 90nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 3.5mΩ
Produkt ist nicht verfügbar
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| SIS862DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 52W
Gate charge: 20.8nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 12.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 52W
Gate charge: 20.8nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 12.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5401-E3/73 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; Ifsm: 200A; DO201AD; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; Ifsm: 200A; DO201AD; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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| SMCJ5.0CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 2.02 EUR |
| RCA120662R0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 62Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 62Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 62Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 62Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| CRCW120662R0FKEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 62Ω; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 62Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 62Ω; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 62Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x1.6x0.55mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BAS19-E3-18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BAS19-G3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| VS-MBR1035-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10A; TO220AC; Ufmax: 840mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.84V
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10A; TO220AC; Ufmax: 840mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.84V
Kind of package: tube
Manufacturer standard package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MKP1848H54070JK2 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; DC-Link; H: 25mm; 4uF; 700VDC; THT; ±5%
Type of capacitor: polypropylene
Kind of capacitor: DC-Link
Height: 25mm
Capacitance: 4µF
Operating voltage: 700V DC
Leads: radial
Mounting: THT
ESR value: 10mΩ
Tolerance: ±5%
Body dimensions: 32x15mm
Terminal pitch: 27.5mm
Conform to the norm: AEC-Q200
Operating temperature: -40...85°C
Category: THT Film Capacitors
Description: Capacitor: polypropylene; DC-Link; H: 25mm; 4uF; 700VDC; THT; ±5%
Type of capacitor: polypropylene
Kind of capacitor: DC-Link
Height: 25mm
Capacitance: 4µF
Operating voltage: 700V DC
Leads: radial
Mounting: THT
ESR value: 10mΩ
Tolerance: ±5%
Body dimensions: 32x15mm
Terminal pitch: 27.5mm
Conform to the norm: AEC-Q200
Operating temperature: -40...85°C
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.61 EUR |
| 300+ | 2.33 EUR |
| BZW04-20B-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 400W; BZW04; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8V; 12A; bidirectional; DO41; 400W; BZW04; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Leakage current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5500 Stücke
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Stück im Wert von UAH
| SISS4409DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -59.2A; 56.8W
Case: PowerPAK® 1212-8
Polarisation: unipolar
Drain current: -59.2A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 9mΩ
Mounting: SMD
Power dissipation: 56.8W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -59.2A; 56.8W
Case: PowerPAK® 1212-8
Polarisation: unipolar
Drain current: -59.2A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 9mΩ
Mounting: SMD
Power dissipation: 56.8W
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| SISS4402DN-T1-UE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 128A
Case: PowerPAK® 1212-8
Gate charge: 46.7nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
On-state resistance: 2.2mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 128A
Case: PowerPAK® 1212-8
Gate charge: 46.7nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: -16...20V
Kind of package: reel; tape
On-state resistance: 2.2mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| SISS4410DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A
Case: PowerPAK® 1212-8
Gate charge: 5.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 9mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A
Case: PowerPAK® 1212-8
Gate charge: 5.3nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 9mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| IRFR420TRPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| RCA0402140KFKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 140kΩ; 0402; 63mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 140kΩ
Case - inch: 0402
Case - mm: 1005
Power: 63mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 140kΩ; 0402; 63mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 140kΩ
Case - inch: 0402
Case - mm: 1005
Power: 63mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CRCW0402140KFKTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 140kΩ; SMD; 0402; 63mW; ±1%; 50V; 1x0.5x0.35mm
Case - inch: 0402
Case - mm: 1005
Quantity in set/package: 10000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 140kΩ
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Category: SMD resistors
Description: Resistor: thick film; 140kΩ; SMD; 0402; 63mW; ±1%; 50V; 1x0.5x0.35mm
Case - inch: 0402
Case - mm: 1005
Quantity in set/package: 10000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 140kΩ
Body dimensions: 1x0.5x0.35mm
Power: 63mW
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| BYV27-150-TR |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 50A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.07V
Reverse recovery time: 25ns
Max. load current: 15A
Kind of package: 10 inch reel
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 50A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.07V
Reverse recovery time: 25ns
Max. load current: 15A
Kind of package: 10 inch reel
Leakage current: 0.15mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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Stück im Wert von UAH
| SBYV27-100-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 50A; DO15,DO204AC; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 50A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 15ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 50A; DO15,DO204AC; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 50A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 15ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| SBYV27-150-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 50A; DO15,DO204AC; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 50A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 15ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; Ifsm: 50A; DO15,DO204AC; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 50A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 15ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
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| SBYV27-50-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; Ifsm: 50A; DO15,DO204AC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 50A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 15ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; Ifsm: 50A; DO15,DO204AC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 50A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 15ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV28-050-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Reverse recovery time: 30ns
Max. load current: 25A
Kind of package: Ammo Pack
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Reverse recovery time: 30ns
Max. load current: 25A
Kind of package: Ammo Pack
Leakage current: 0.15mA
auf Bestellung 12326 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 2.06 EUR |
| 57+ | 1.5 EUR |
| 64+ | 1.34 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 1.04 EUR |
| BYV28-200-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Reverse recovery time: 30ns
Max. load current: 25A
Kind of package: Ammo Pack
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.1V
Reverse recovery time: 30ns
Max. load current: 25A
Kind of package: Ammo Pack
Leakage current: 0.15mA
auf Bestellung 1695 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 1.27 EUR |
| 78+ | 1.11 EUR |
| 100+ | 1.04 EUR |
| BYV28-600-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Kind of package: Ammo Pack
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3.5A; Ifsm: 90A; SOD64; Ammo Pack; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3.5A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 90A
Case: SOD64
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Kind of package: Ammo Pack
Leakage current: 0.15mA
auf Bestellung 2194 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 1.81 EUR |
| 56+ | 1.54 EUR |
| 61+ | 1.39 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.24 EUR |