| Foto | Bezeichnung | Hersteller | Beschreibung |
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| VS-8EWF12STRL-M3 | VISHAY |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs. Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 270ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DPAK Kind of package: 13 inch reel Quantity in set/package: 3000pcs. Max. forward voltage: 1.3V |
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| VS-8EWF12STRR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs. Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 270ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DPAK Kind of package: 13 inch reel Quantity in set/package: 3000pcs. Max. forward voltage: 1.3V |
Produkt ist nicht verfügbar |
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| VS-8EWS12S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DPAK Kind of package: tube Quantity in set/package: 75pcs. Leakage current: 0.5mA Max. forward voltage: 1.1V Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |
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| VS-8EWS12SLHM3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DPAK Kind of package: 13 inch reel Quantity in set/package: 3000pcs. Max. forward voltage: 1.1V Application: automotive industry |
Produkt ist nicht verfügbar |
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| VS-8EWS12STR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DPAK Kind of package: 13 inch reel Quantity in set/package: 2000pcs. Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| VS-8EWS12STRL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DPAK Kind of package: 13 inch reel Quantity in set/package: 3000pcs. Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| VS-8EWS12STRR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DPAK Kind of package: 13 inch reel Quantity in set/package: 3000pcs. Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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| VS-HFA08TB120SL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK,TO263AB; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; TO263AB Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
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| VS-HFA08TB120SR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 95ns; D2PAK,TO263AB; 800pcs. Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 95ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; TO263AB Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
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| MBRB20100CT-E3/4W | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |
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| VS-MBRB20100CT-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: tube Quantity in set/package: 50pcs. |
Produkt ist nicht verfügbar |
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| VS-MBRB20100CTRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
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| VS-MBRB20100CTHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: tube Quantity in set/package: 50pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
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| VS-MBRB20100CTL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
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| VS-MBRB20100CTLHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
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| VS-MBRB20100CTR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs. Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 100V Load current: 20A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
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| AC05000001002JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 10kΩ; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm Resistance: 10kΩ Mounting: THT Type of resistor: wire-wound Diameter: 7.5mm Body dimensions: Ø7.5x18mm Length: 18mm Power: 5W Tolerance: ±5% Conform to the norm: AEC-Q200 Leads: axial |
Produkt ist nicht verfügbar |
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BFC233990005 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; X2; 0.047uF; 310V; 630VDC; 17.5x5x11mm Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 47nF Operating voltage: 310V; 630V DC Body dimensions: 17.5x5x11mm Mounting: THT Tolerance: ±20% Terminal pitch: 15mm Leads: 2pin |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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| VJ0603Y222KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 2.2nF; 25VDC; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 2.2nF Operating voltage: 25V DC Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Body dimensions: 1.6x0.8mm Operating temperature: -55...125°C |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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| T12X0103MAB25 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; 10kΩ; ±20%; cermet; 12x12x13mm; 50pcs. Type of potentiometer: mounting Mounting: THT Operating temperature: -55...125°C Body dimensions: 12x12x13mm Quantity in set/package: 50pcs. Tolerance: ±20% Temperature coefficient: 100ppm/°C Resistance: 10kΩ Track material: cermet |
Produkt ist nicht verfügbar |
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| T12X0105JAB25 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; 1MΩ; ±5%; cermet; 12x12x13mm; 50pcs. Type of potentiometer: mounting Mounting: THT Operating temperature: -55...125°C Body dimensions: 12x12x13mm Quantity in set/package: 50pcs. Tolerance: ±5% Temperature coefficient: 100ppm/°C Resistance: 1MΩ Track material: cermet |
Produkt ist nicht verfügbar |
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NTCS0805E3334JHT | VISHAY |
Category: SMD measurement NTC thermistors Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C Case - inch: 0805 Resistance: 0.33MΩ Power: 0.21W Tolerance: ±5% Operating temperature: -40...150°C Material constant B: 3930K Type of sensor: NTC thermistor Mounting: SMD |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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| CRCW08051K50FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film Type of resistor: thick film |
Produkt ist nicht verfügbar |
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| CRCW08051K50FKEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 500mW; ±1%; 0805; 2x1.25mm Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 1.5kΩ Power: 0.5W Tolerance: ±1% Manufacturer series: 0805 Max. operating voltage: 150V Body dimensions: 2x1.25mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA080522R0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 22Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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CRCW080522R0FKTCBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 22Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Body dimensions: 2x1.25x0.45mm Quantity in set/package: 20000pcs. |
Produkt ist nicht verfügbar |
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| MAL205752681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø30x40mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 200V DC Body dimensions: Ø30x40mm Terminal pitch: 10mm Tolerance: ±20% Service life: 12000h Operating temperature: -40...85°C Height: 40mm Diameter: 30mm |
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| MAL205352681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 200V DC Body dimensions: Ø35x50mm Tolerance: ±20% Service life: 12000h Operating temperature: -40...85°C Height: 50mm Diameter: 35mm |
Produkt ist nicht verfügbar |
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CRCW08059K10FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 9.1kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) |
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RCA08059K10FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 9.1kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
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CRCW08059K10FHEAP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 9.1kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Body dimensions: 2x1.25x0.5mm |
Produkt ist nicht verfügbar |
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SMCJ33CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape Tolerance: ±5% |
auf Bestellung 1028 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMCJ33CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel; tape Tolerance: ±5% |
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| SMCJ33CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7V; 28.1A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Operating temperature: -55...150°C Application: universal Number of channels: 1 |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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| VLMF3100-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; orange; SMD; 3528,PLCC2; 28÷90mcd; 2÷2.6VDC; 3.5x2.8x1.75mm Type of diode: LED LED colour: orange Mounting: SMD Case: 3528; PLCC2 Luminosity: 28...90mcd Operating voltage: 2...2.6V DC Dimensions: 3.5x2.8x1.75mm Viewing angle: 120° LED current: 10mA Wavelength: 598...611nm Front: flat |
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| SIHG22N60AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
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| SIHA22N60AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 49A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHA22N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHB22N60AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: SMD Gate charge: 443nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SIHB22N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHB22N60EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHB22N60EL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 45A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 197mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHB22N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHB22N60ET5-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SiHP22N60AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SIHP22N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFR310PBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.7A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 374 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFR310TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.7A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
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| IRFR310TRPBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.7A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
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SI7615ADN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 183nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2964 Stücke: Lieferzeit 14-21 Tag (e) |
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| CMB02070X2101FB200 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm Type of resistor: carbon film Resistance: 2.1kΩ Power: 1W Tolerance: ±1% Operating voltage: 500V Case: 0207 MELF Operating temperature: -55...125°C Diameter: 2.2mm Body dimensions: Ø2.2x5.8mm Length: 5.8mm Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Mounting: SMD |
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| CMB02070X2101FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm Type of resistor: carbon film Resistance: 2.1kΩ Power: 1W Tolerance: ±1% Operating voltage: 500V Case: 0207 MELF Operating temperature: -55...125°C Diameter: 2.2mm Body dimensions: Ø2.2x5.8mm Length: 5.8mm Roll diameter max.: 330mm Conform to the norm: AEC-Q200 Mounting: SMD |
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| VS-KBPC608 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.2V Load current: 6A Max. forward impulse current: 125A Version: square Case: D-72; KBPC6 Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: bulk |
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| VS-KBPC608PBF | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.2V Load current: 6A Max. forward impulse current: 125A Version: square Case: D-72; KBPC6 Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: bulk |
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| SS16HM3_B/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 16200 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS16-M3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 32400 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC2510-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC2510W-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: bulk |
Produkt ist nicht verfügbar |
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| VS-GBPC2510A | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.4kA Version: square Case: GBPC-A Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
Produkt ist nicht verfügbar |
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| VS-GBPC2510W | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: bulk |
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Im Einkaufswagen Stück im Wert von UAH |
| VS-8EWF12STRL-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-8EWF12STRR-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-8EWS12S-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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| VS-8EWS12SLHM3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Application: automotive industry
Produkt ist nicht verfügbar
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| VS-8EWS12STR-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 2000pcs.
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 2000pcs.
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-8EWS12STRL-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-8EWS12STRR-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-HFA08TB120SL-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK,TO263AB; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK,TO263AB; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
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| VS-HFA08TB120SR-M3 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 95ns; D2PAK,TO263AB; 800pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 95ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 95ns; D2PAK,TO263AB; 800pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 95ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
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| MBRB20100CT-E3/4W |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
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| VS-MBRB20100CT-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
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| VS-MBRB20100CTRHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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| VS-MBRB20100CTHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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| VS-MBRB20100CTL-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-MBRB20100CTLHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| VS-MBRB20100CTR-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
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| AC05000001002JAC00 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 10kΩ; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Resistance: 10kΩ
Mounting: THT
Type of resistor: wire-wound
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Power: 5W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 10kΩ; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Resistance: 10kΩ
Mounting: THT
Type of resistor: wire-wound
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Power: 5W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
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| BFC233990005 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 0.047uF; 310V; 630VDC; 17.5x5x11mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 47nF
Operating voltage: 310V; 630V DC
Body dimensions: 17.5x5x11mm
Mounting: THT
Tolerance: ±20%
Terminal pitch: 15mm
Leads: 2pin
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 0.047uF; 310V; 630VDC; 17.5x5x11mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 47nF
Operating voltage: 310V; 630V DC
Body dimensions: 17.5x5x11mm
Mounting: THT
Tolerance: ±20%
Terminal pitch: 15mm
Leads: 2pin
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| VJ0603Y222KXXCW1BC |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 2.2nF; 25VDC; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 2.2nF
Operating voltage: 25V DC
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Body dimensions: 1.6x0.8mm
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 2.2nF; 25VDC; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 2.2nF
Operating voltage: 25V DC
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Body dimensions: 1.6x0.8mm
Operating temperature: -55...125°C
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12000+ | 0.0075 EUR |
| T12X0103MAB25 |
|
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; 10kΩ; ±20%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Resistance: 10kΩ
Track material: cermet
Category: Single turn THT trimmers
Description: Potentiometer: mounting; 10kΩ; ±20%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Resistance: 10kΩ
Track material: cermet
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| T12X0105JAB25 |
|
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; 1MΩ; ±5%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±5%
Temperature coefficient: 100ppm/°C
Resistance: 1MΩ
Track material: cermet
Category: Single turn THT trimmers
Description: Potentiometer: mounting; 1MΩ; ±5%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±5%
Temperature coefficient: 100ppm/°C
Resistance: 1MΩ
Track material: cermet
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| NTCS0805E3334JHT |
|
Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| CRCW08051K50FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film
Type of resistor: thick film
Produkt ist nicht verfügbar
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| CRCW08051K50FKEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 500mW; ±1%; 0805; 2x1.25mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.5W
Tolerance: ±1%
Manufacturer series: 0805
Max. operating voltage: 150V
Body dimensions: 2x1.25mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 500mW; ±1%; 0805; 2x1.25mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.5W
Tolerance: ±1%
Manufacturer series: 0805
Max. operating voltage: 150V
Body dimensions: 2x1.25mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.019 EUR |
| RCA080522R0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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| CRCW080522R0FKTCBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 20000pcs.
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 20000pcs.
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| MAL205752681E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø30x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø30x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 30mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø30x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø30x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 30mm
Produkt ist nicht verfügbar
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| MAL205352681E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 50mm
Diameter: 35mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 50mm
Diameter: 35mm
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| CRCW08059K10FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.036 EUR |
| 3800+ | 0.019 EUR |
| RCA08059K10FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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| CRCW08059K10FHEAP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
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| SMCJ33CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Tolerance: ±5%
auf Bestellung 1028 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 186+ | 0.38 EUR |
| 237+ | 0.3 EUR |
| 260+ | 0.28 EUR |
| 500+ | 0.26 EUR |
| 850+ | 0.24 EUR |
| SMCJ33CA-E3/9AT |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel; tape
Tolerance: ±5%
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| SMCJ33CA-E3/9AT |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7V; 28.1A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -55...150°C
Application: universal
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7V; 28.1A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -55...150°C
Application: universal
Number of channels: 1
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3500+ | 0.22 EUR |
| VLMF3100-GS08 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; orange; SMD; 3528,PLCC2; 28÷90mcd; 2÷2.6VDC; 3.5x2.8x1.75mm
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 3528; PLCC2
Luminosity: 28...90mcd
Operating voltage: 2...2.6V DC
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 120°
LED current: 10mA
Wavelength: 598...611nm
Front: flat
Category: SMD colour LEDs
Description: LED; orange; SMD; 3528,PLCC2; 28÷90mcd; 2÷2.6VDC; 3.5x2.8x1.75mm
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 3528; PLCC2
Luminosity: 28...90mcd
Operating voltage: 2...2.6V DC
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 120°
LED current: 10mA
Wavelength: 598...611nm
Front: flat
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| SIHG22N60AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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Stück im Wert von UAH
| SIHA22N60AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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Stück im Wert von UAH
| SIHA22N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHB22N60AE-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB22N60E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| SIHB22N60EF-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB22N60EL-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB22N60ET1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB22N60ET5-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SiHP22N60AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP22N60EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRFR310PBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 109+ | 0.66 EUR |
| 120+ | 0.6 EUR |
| 150+ | 0.54 EUR |
| 300+ | 0.52 EUR |
| IRFR310TRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR310TRPBF | |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI7615ADN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 183nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 183nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2964 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 101+ | 0.71 EUR |
| 129+ | 0.55 EUR |
| 145+ | 0.49 EUR |
| 500+ | 0.46 EUR |
| CMB02070X2101FB200 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Mounting: SMD
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMB02070X2101FB700 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Mounting: SMD
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-KBPC608 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-KBPC608PBF |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Produkt ist nicht verfügbar
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| SS16HM3_B/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 16200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3600+ | 0.29 EUR |
| SS16-M3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 32400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5400+ | 0.13 EUR |
| GBPC2510-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.62 EUR |
| 19+ | 3.95 EUR |
| GBPC2510W-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-GBPC2510A |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-A
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-A
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-GBPC2510W |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH